DE3800749C2 - - Google Patents
Info
- Publication number
- DE3800749C2 DE3800749C2 DE3800749A DE3800749A DE3800749C2 DE 3800749 C2 DE3800749 C2 DE 3800749C2 DE 3800749 A DE3800749 A DE 3800749A DE 3800749 A DE3800749 A DE 3800749A DE 3800749 C2 DE3800749 C2 DE 3800749C2
- Authority
- DE
- Germany
- Prior art keywords
- sintered body
- aln
- rare earth
- sintered
- body according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005245 sintering Methods 0.000 claims description 98
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 53
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 50
- 229910052799 carbon Inorganic materials 0.000 claims description 49
- 229910052760 oxygen Inorganic materials 0.000 claims description 47
- 239000001301 oxygen Substances 0.000 claims description 47
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 46
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 46
- 239000012298 atmosphere Substances 0.000 claims description 45
- 239000000843 powder Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 31
- 150000001875 compounds Chemical class 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 229910052727 yttrium Inorganic materials 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 229910018516 Al—O Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 description 52
- 230000000052 comparative effect Effects 0.000 description 24
- 230000008859 change Effects 0.000 description 18
- 238000011109 contamination Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 16
- 239000007858 starting material Substances 0.000 description 15
- 238000004458 analytical method Methods 0.000 description 12
- 229910001873 dinitrogen Inorganic materials 0.000 description 12
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 11
- 239000011230 binding agent Substances 0.000 description 10
- -1 compounds Rare earth Chemical class 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 150000001768 cations Chemical class 0.000 description 8
- 125000002091 cationic group Chemical group 0.000 description 7
- 230000035699 permeability Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- ZRPZPNYZFSJUPA-UHFFFAOYSA-N ARS-1620 Chemical compound Oc1cccc(F)c1-c1c(Cl)cc2c(ncnc2c1F)N1CCN(CC1)C(=O)C=C ZRPZPNYZFSJUPA-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 238000003947 neutron activation analysis Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000013589 supplement Substances 0.000 description 5
- 229910018514 Al—O—N Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- KCBWAFJCKVKYHO-UHFFFAOYSA-N 6-(4-cyclopropyl-6-methoxypyrimidin-5-yl)-1-[[4-[1-propan-2-yl-4-(trifluoromethyl)imidazol-2-yl]phenyl]methyl]pyrazolo[3,4-d]pyrimidine Chemical compound C1(CC1)C1=NC=NC(=C1C1=NC=C2C(=N1)N(N=C2)CC1=CC=C(C=C1)C=1N(C=C(N=1)C(F)(F)F)C(C)C)OC KCBWAFJCKVKYHO-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 150000003748 yttrium compounds Chemical class 0.000 description 2
- UKGJZDSUJSPAJL-YPUOHESYSA-N (e)-n-[(1r)-1-[3,5-difluoro-4-(methanesulfonamido)phenyl]ethyl]-3-[2-propyl-6-(trifluoromethyl)pyridin-3-yl]prop-2-enamide Chemical compound CCCC1=NC(C(F)(F)F)=CC=C1\C=C\C(=O)N[C@H](C)C1=CC(F)=C(NS(C)(=O)=O)C(F)=C1 UKGJZDSUJSPAJL-YPUOHESYSA-N 0.000 description 1
- YGYGASJNJTYNOL-CQSZACIVSA-N 3-[(4r)-2,2-dimethyl-1,1-dioxothian-4-yl]-5-(4-fluorophenyl)-1h-indole-7-carboxamide Chemical compound C1CS(=O)(=O)C(C)(C)C[C@@H]1C1=CNC2=C(C(N)=O)C=C(C=3C=CC(F)=CC=3)C=C12 YGYGASJNJTYNOL-CQSZACIVSA-N 0.000 description 1
- VJPPLCNBDLZIFG-ZDUSSCGKSA-N 4-[(3S)-3-(but-2-ynoylamino)piperidin-1-yl]-5-fluoro-2,3-dimethyl-1H-indole-7-carboxamide Chemical compound C(C#CC)(=O)N[C@@H]1CN(CCC1)C1=C2C(=C(NC2=C(C=C1F)C(=O)N)C)C VJPPLCNBDLZIFG-ZDUSSCGKSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical group [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- LYKJEJVAXSGWAJ-UHFFFAOYSA-N compactone Natural products CC1(C)CCCC2(C)C1CC(=O)C3(O)CC(C)(CCC23)C=C LYKJEJVAXSGWAJ-UHFFFAOYSA-N 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- LZMJNVRJMFMYQS-UHFFFAOYSA-N poseltinib Chemical compound C1CN(C)CCN1C(C=C1)=CC=C1NC1=NC(OC=2C=C(NC(=O)C=C)C=CC=2)=C(OC=C2)C2=N1 LZMJNVRJMFMYQS-UHFFFAOYSA-N 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP395487 | 1987-01-13 | ||
| JP62009034A JP2511011B2 (ja) | 1987-01-20 | 1987-01-20 | 高熱伝導性窒化アルミニウム焼結体 |
| JP62103059A JPH07121829B2 (ja) | 1987-04-28 | 1987-04-28 | 高熱伝導性窒化アルミニウム焼結体 |
| JP62110807A JP2547767B2 (ja) | 1987-05-08 | 1987-05-08 | 高熱伝導性窒化アルミニウム焼結体 |
| JP62110813A JP2856734B2 (ja) | 1987-01-13 | 1987-05-08 | 高熱伝導性窒化アルミニウム焼結体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3800749A1 DE3800749A1 (de) | 1988-07-21 |
| DE3800749C2 true DE3800749C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-01-18 |
Family
ID=27518420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3800749A Granted DE3800749A1 (de) | 1987-01-13 | 1988-01-13 | Aluminiumnitrid-sinterkoerper hoher waermeleitfaehigkeit und verfahren zu seiner herstellung |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4847221A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
| DE (1) | DE3800749A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01203270A (ja) * | 1988-02-08 | 1989-08-16 | Sumitomo Electric Ind Ltd | 高熱伝導性窒化アルミニウム焼結体及びその製造法 |
| AU627777B2 (en) * | 1988-09-02 | 1992-09-03 | Dow Chemical Company, The | Increasing aluminum nitride thermal conductivity via pre- densification treatment |
| WO1990002716A1 (en) * | 1988-09-02 | 1990-03-22 | The Dow Chemical Company | Increasing aluminum nitride thermal conductivity via vapour-phase carbon |
| JPH02124778A (ja) * | 1988-11-04 | 1990-05-14 | Hitachi Metals Ltd | ＡｌＮセラミックス同志の接合体及びこれを用いた放熱装置 |
| JPH03257071A (ja) * | 1989-11-30 | 1991-11-15 | Toshiba Corp | 遮光性窒化アルミニウム焼結体及びその製造方法 |
| US5830570A (en) * | 1989-12-19 | 1998-11-03 | Kyocera Corporation | Aluminum nitride substrate and process for preparation thereof |
| JP2786283B2 (ja) * | 1989-12-22 | 1998-08-13 | 株式会社日立製作所 | 表面改質方法およびその装置並びに表面改質基材 |
| JP3214890B2 (ja) * | 1991-05-30 | 2001-10-02 | 京セラ株式会社 | 窒化アルミニウム焼結体およびその製法、並びにそれを用いた焼成用治具 |
| EP0603282A1 (en) * | 1991-09-12 | 1994-06-29 | The Dow Chemical Company | Method of making co-fired, multilayer substrates |
| US5320990A (en) * | 1993-03-30 | 1994-06-14 | The Dow Chemical Company | Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies |
| US5668524A (en) * | 1994-02-09 | 1997-09-16 | Kyocera Corporation | Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase |
| DE69635908T2 (de) * | 1995-08-03 | 2006-11-23 | Ngk Insulators, Ltd., Nagoya | Gesinterte Aluminiumnitridkörper und deren Verwendung als Subtrat in einer Vorrichtung zur Herstellung von Halbleitern |
| JP3457495B2 (ja) * | 1996-03-29 | 2003-10-20 | 日本碍子株式会社 | 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック |
| US5705450A (en) * | 1996-12-17 | 1998-01-06 | The Dow Chemical Company | A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body |
| EP1518843A3 (en) * | 2003-09-25 | 2007-05-23 | Tokuyama Corporation | Aluminum nitride sintered body and method of producing the same |
| KR100912641B1 (ko) * | 2004-06-21 | 2009-08-17 | 가부시끼가이샤 도꾸야마 | 질화물 소결체 및 그 제조 방법 |
| EP2110366A4 (en) * | 2007-02-02 | 2012-05-30 | Tokuyama Corp | ALUMINUM NITRIDE INTERPUT AND METHOD OF MANUFACTURING THEREOF |
| US7799267B2 (en) * | 2007-09-14 | 2010-09-21 | The Penn State Research Foundation | Method for manufacture of transparent ceramics |
| TWI531528B (zh) * | 2011-08-04 | 2016-05-01 | 國家中山科學研究院 | 氮化鋁碳素除氧法 |
| WO2018117161A1 (ja) | 2016-12-21 | 2018-06-28 | 日本碍子株式会社 | 配向ＡｌＮ焼結体及びその製法 |
| WO2018117162A1 (ja) * | 2016-12-21 | 2018-06-28 | 日本碍子株式会社 | 透明ＡｌＮ焼結体及びその製法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3333406A1 (de) * | 1982-09-17 | 1984-03-22 | Tokuyama Soda K.K., Tokuyama, Yamaguchi | Feines aluminiumnitridpulver, verfahren zu seiner herstellung und es enthaltendes mittel |
| DE3247985C2 (de) * | 1982-12-24 | 1992-04-16 | W.C. Heraeus Gmbh, 6450 Hanau | Keramischer Träger |
| JPS6071575A (ja) * | 1983-09-26 | 1985-04-23 | 株式会社トクヤマ | 窒化アルミニウム焼結体及びその製造方法 |
| DE3337630A1 (de) * | 1983-10-15 | 1985-04-25 | W.C. Heraeus Gmbh, 6450 Hanau | Temperaturausgleichskoerper |
| US4547471A (en) * | 1983-11-18 | 1985-10-15 | General Electric Company | High thermal conductivity aluminum nitride ceramic body |
| JPS60127267A (ja) * | 1983-12-12 | 1985-07-06 | 株式会社東芝 | 高熱伝導性窒化アルミニウム焼結体の製造方法 |
| JPS60171270A (ja) * | 1984-02-13 | 1985-09-04 | 株式会社トクヤマ | 透光性を有する窒化アルミニウム焼結体製造用原料組成物 |
| US4698320A (en) * | 1984-06-26 | 1987-10-06 | Kabushiki Kaisha Toshiba | Aluminum nitride sintered body |
| JPS6121978A (ja) * | 1984-07-09 | 1986-01-30 | 株式会社トクヤマ | 窒化アルミニウム焼結体の製造方法 |
| US4578234A (en) * | 1984-10-01 | 1986-03-25 | General Electric Company | Process of pressureless sintering to produce dense high thermal conductivity ceramic body of deoxidized aluminum nitride |
| US4746637A (en) * | 1984-11-08 | 1988-05-24 | Kabushiki Kaisha Toshiba | Aluminum nitride sintered body and process for producing the same |
| US4578365A (en) * | 1984-11-26 | 1986-03-25 | General Electric Company | High thermal conductivity ceramic body of aluminum nitride |
| US4578364A (en) * | 1984-12-07 | 1986-03-25 | General Electric Company | High thermal conductivity ceramic body of aluminum nitride |
-
1988
- 1988-01-11 US US07/142,818 patent/US4847221A/en not_active Expired - Lifetime
- 1988-01-13 DE DE3800749A patent/DE3800749A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3800749A1 (de) | 1988-07-21 |
| US4847221A (en) | 1989-07-11 |
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