TWI531528B - 氮化鋁碳素除氧法 - Google Patents
氮化鋁碳素除氧法 Download PDFInfo
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Description
本發明是有關於一種氮化鋁碳素除氧法,尤指一種可使溫控爐於碳素與氮氣條件下進行退火過程,且利用碳素之還原能力將溫控爐與氮化鋁基板氧成份在高溫狀態下反應成一氧化碳或二氧化碳,進而製成純度佳以及品質良好之氮化鋁基板者。
按,由於LED產品因具有節能、省電、高效率、使用壽命長且具環保效益等優點,因而成為近年來最受矚目的產業之一。
目前LED應用之領域以手機背光源所佔的比例最多,但LED產業之長期發展則是以取代目前照明燈具之高功率LED為主,為了實現LED在照明上的應用,仍須有許多問題上尚待解決,例如:轉化效率、散熱、演色性、壽命及價格等問題。
在散熱的議題上,由於LED元件在運作中輸入的電能除了轉化成光能外,其餘的能量皆以熱的形式產生,若所產生的熱能無法及時有效的散出,使元件的溫度升高,將會嚴重影響LED發光效率、壽命及穩定性。
然,由於氮化鋁(AlN)陶瓷材料因其具有高熱傳導率(熱傳導係數~170W/mK)、高絕緣電阻係數、優越之機械強度及抗熱震等特性,故,可應用於LED散熱基板及電子元件封裝材料上,而與傳統之藍寶石(Al2O3)基板相比之下,藍寶石基板之散熱能力(熱傳導係數~20W/mK)明顯遜色許多,因此,在高功率LED的發展上,氮化鋁基板開始逐漸備受重視。
雖然氮化鋁基板之散熱效率為藍寶石基板的7倍之多,因此,相較於藍寶石基板,氮化鋁基板可提升LED壽命約6,000~7,000小時已上;但由於氮化鋁本身特性在高溫下,表面很容易被氧化,因此,在氮化鋁基板之製程過程中,該基板之表面極易形成一層氧化鋁薄層,而該氧化鋁薄層之形成便會到至製出的氮化鋁基板品質及純度下降,甚至影響基板的散熱表現。
本發明之主要目的係在於,可使溫控爐於碳素與氮氣條件下進行退火過程,且利用碳素之還原能力將溫控爐與氮化鋁基板氧成份在高溫狀態下反應成一氧化碳或二氧化碳,進而製成純度佳以及品質良好之氮化鋁基板。
為達上述之目的,本發明係一種氮化鋁碳素除氧法包含有下列步驟:
步驟一:提供一溫控爐。
步驟二:將氮化鋁基板設於溫控爐中,並將氮氣導入溫控爐中,使溫控爐中形成氮氣氣氛,且讓溫控爐升溫至氮化鋁基板之變相溫度。
步驟三:停止加溫使溫控爐進行退火,並於退火過程中將碳素導入溫控爐,而使溫控爐與氮化鋁基板內之氧成分與碳素在高溫狀態反應形成一氧化碳或二氧化碳並隨氮氣排出溫控爐,如此,即可得到高純度之氮化鋁基板。
於本發明之一實施例中,該溫控爐係具有排氣口,且該溫控爐更連通設有氮氣供應單元及碳素供應單元,並於該溫控爐中係可設有加熱單元。
於本發明之一實施例中,該氮氣供應單元及碳素供應單元係相互連通後再與溫控爐連通。
於本發明之一實施例中,該溫控爐、氮氣供應單元及碳素供應單元之間係設有多數控制閥。
於本發明之一實施例中,該氮氣供應單元中氮氣純度範圍係可為2N~6N。
於本發明之一實施例中,該變相溫度係為1500℃以上。
於本發明之一實施例中,該步驟三中係於溫控爐內之溫度降至1500℃以下時停止碳素之供應。
請參閱『第1、2及第3圖』所示,係分別為本發明步驟一中所提溫控爐之示意圖、本發明步驟二之示意圖、本發明步驟三之示意圖。如圖所示:本發明係一種氮化鋁碳素除氧法,其至少包含有下列步驟:
步驟一:提供一溫控爐1,該溫控爐1係具有排氣口11,且該溫控爐1更連通設有氮氣供應單元12及碳素供應單元13,該氮氣供應單元12及碳素供應單元13係相互連通後再與溫控爐1連通,而該溫控爐1、氮氣供應單元12及碳素供應單元13之間係設有多數控制閥14,而各控制閥14係可進行氮氣供應單元12及碳素供應單元13之開啟或關閉等動作,以控制氮氣及碳素導入溫控爐1中之時間及用量,並於該溫控爐1中係可設有加熱單元15。
步驟二:將氮化鋁基板2設於溫控爐1中,並由氮氣供應單元12將氮氣導入溫控爐1中,使溫控爐1中形成氮氣氣氛,且讓溫控爐1以加熱單元15升溫至氮化鋁基板2之變相溫度,而該變相溫度係為1500℃以上,其中該氮氣供應單元12中之氮氣濃度越純越好,而本實施例中其純度範圍係可為2N~6N。
步驟三:停止加熱單元15之加溫使溫控爐1進行退火,並於退火過程中以碳素供應單元13將碳素導入溫控爐1,而使溫控爐1與氮化鋁基板2內之氧成分與碳素在高溫狀態反應形成一氧化碳或二氧化碳並隨氮氣由溫控爐1之排氣口11排出,待溫控爐1內之溫度降至1500℃以下時將碳素供應元單13關閉,如此,即可得到高純度之氮化鋁基板2。
如此,可藉由上述之步驟,而在碳素與氮氣之條件下進行退火過程,利用碳素之還原能力於高溫狀態下將氧成份反應成一氧化碳或二氧化碳,以避免氮化鋁基板2表面在製程過程中形成一層氧化鋁薄層,藉此,可製成純度及品質良好之氮化鋁基板2。
綜上所述,本發明氮化鋁碳素除氧法可有效改善習用之種種缺點,可使溫控爐於碳素與氮氣條件下進行退火過程,且利用碳素之還原能力將溫控爐與氮化鋁基板氧成份在高溫狀態下反應成一氧化碳或二氧化碳,進而製成純度佳以及品質良好之氮化鋁基板;進而使本發明之產生能更進步、更實用、更符合消費者使用之所須,確已符合發明專利申請之要件,爰依法提出專利申請。
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍;故,凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾,皆應仍屬本發明專利涵蓋之範圍內。
1...溫控爐
11...排氣口
12...氮氣供應單元
13...碳素供應單元
14...控制閥
15...加熱單元
2...氮化鋁基板
第1圖,係本發明步驟一中所提溫控爐之示意圖。
第2圖,係本發明步驟二之示意圖。
第3圖,係本發明步驟三之示意圖。
1...溫控爐
11...排氣口
12...氮氣供應單元
13...碳素供應單元
14...控制閥
15...加熱單元
2...氮化鋁基板
Claims (7)
- 一種氮化鋁碳素除氧法,包括有下列步驟:步驟一:提供一溫控爐;步驟二:將氮化鋁基板設於溫控爐中,並將氮氣導入溫控爐中,使溫控爐中形成氮氣氣氛,且讓溫控爐升溫至氮化鋁基板之變相溫度;以及步驟三:停止加溫使溫控爐進行退火,並於退火過程中將碳素導入溫控爐,而使溫控爐與氮化鋁基板內之氧成分與碳素在高溫狀態反應形成一氧化碳或二氧化碳並隨氮氣排出溫控爐,如此,即可得到高純度之氮化鋁基板。
- 依申請專利範圍第1項所述之氮化鋁碳素除氧法,其中,該溫控爐係具有排氣口,且該溫控爐更連通設有氮氣供應單元及碳素供應單元,並於該溫控爐中係可設有加熱單元。
- 依申請專利範圍第2項所述之氮化鋁碳素除氧法,其中,該氮氣供應單元及碳素供應單元係相互連通後再與溫控爐連通。
- 依申請專利範圍第2項所述之氮化鋁碳素除氧法,其中,該溫控爐、氮氣供應單元及碳素供應單元之間係設有多數控制閥。
- 依申請專利範圍第1項所述之氮化鋁碳素除氧法,其中,該氮氣供應單元中氮氣純度範圍係可為2N~6N。
- 依申請專利範圍第1項所述之氮化鋁碳素除氧法,其中,該變相溫度係為1500℃以上。
- 依申請專利範圍第1項所述之氮化鋁碳素除氧法,其中,該步驟三中係於溫控爐內之溫度降至1500℃以下時停止碳素之供應。
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US13/237,076 US8357345B1 (en) | 2011-08-04 | 2011-09-20 | Method for removing oxygen from aluminum nitride by carbon |
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