TWI450855B - 高純度氮化鋁製造方法 - Google Patents

高純度氮化鋁製造方法 Download PDF

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TWI450855B
TWI450855B TW100127710A TW100127710A TWI450855B TW I450855 B TWI450855 B TW I450855B TW 100127710 A TW100127710 A TW 100127710A TW 100127710 A TW100127710 A TW 100127710A TW I450855 B TWI450855 B TW I450855B
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aluminum nitride
block
purity
nitride powder
moisture
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TW201307195A (zh
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Yang Kuao Kuo
Ching Hui Chianglin
Te Po Liu
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Description

高純度氮化鋁製造方法
本發明是有關於一種高純度氮化鋁製造方法，尤指一種可製出純度高且品質優良之晶圓級氮化鋁基板，以應用於LED照明產品，而達到製程簡化、提升產品良率以及有效散熱之功效者。
按，目前的高功率LED產品，其所輸入的能量只有20%可轉化成光，其餘80%皆轉換成熱能，若這些熱無法及時地被排出，則會嚴重影響LED產品的壽命、發光效率及封裝材料的穩定性等，因此，LED的熱管理便成為一項相當重要的議題。
然而，以作為承載LED之基板而言，該基板材質的選擇與基板品質的好壞皆會直接影響LED產品的特性，例如：發光亮度、發光效率、使用壽命...等。就以往所使用的低功率LED而言，傳統氧化鋁基板即可滿足其需求，但隨著LED產業的發展及市場需求層次的擴大，高功率LED逐漸成為目前大家關注的焦點，但傳統的氧化鋁基板無法承載高功率所產生的熱能，故，已無法滿足目前高功率LED的使用。為了解決高功率LED散熱問題，高導熱性基板逐漸被受重視，其散熱原理主要是利用其材料本身具有較大的K值即熱傳導係數，此特性可將熱源從LED晶粒中導出，其散熱途徑為：LED晶粒發光時所產生的熱能，經由LED晶粒散熱基板至系統電路板，然後由大氣環境吸收，以達到散熱之效果。
目前高功率LED主要為可發出藍光的氮化鎵(GaN)基板加上藍寶石(Al2 O3 )基板為主，但藍寶石基板其材料本身的熱傳導能力較差(熱傳導係數~17-27W/mK)，故，LED在高電流操作下，會產生嚴重的散熱問題；因此，目前開始漸漸轉向高導熱的氮化鋁(AlN)基板，氮化鋁基板其材料特性具有高的熱傳導能力(熱傳導係數~170W/mK)、高電絕緣性且使用壽命長、可抗腐蝕、耐高溫及物理特性穩定，故，可適用於高功率之電子元件應用材料。
然而目前產業界主要以四吋氮化鋁基板為主，由於製程上較困難、成品品質不易控制(例如：在燒結時常因受熱不均造成基板龜裂的問題)及價格等問題，因此，尚無八吋晶圓級氮化鋁基板的製程技術。
故，本發明之創作人特潛心研究，將氮化鋁粉末進行簡單的前處理程序，不但可有效改善上述習用之種種缺失，且可製出純度高且品質優良之八吋晶圓級氮化鋁基板。
本發明之主要目的係在於，可製出純度高且品質優良之晶圓級氮化鋁基板，以應用於高功率LED照明產品，而達到製程簡化、提升產品良率以及有效散熱之功效。
為達上述之目的，本發明係一種高純度氮化鋁基板製造方法包含有下列步驟：
步驟一：取氮化鋁粉末材料。
步驟二：於氮化鋁粉末材料中加入抗水氣材料及粘黏劑，並以造粒製程將該氮化鋁粉末材料製成球狀顆粒。
步驟三：將氮化鋁球狀顆粒以鋼模油壓成型出一氮化鋁塊狀體。
步驟四：將氮化鋁塊狀體進行冷均壓處理。
步驟五：以低溫方式去除氮化鋁塊狀體中之抗水氣材料及粘黏劑。
步驟六：再將氮化鋁塊狀體置於一爐體中，並填入氮化硼粉末與氮氣進行燒結。
於本發明之一實施例中，該抗水氣材料係可為矽酸鈣及十二烷胺。
於本發明之一實施例中，該粘黏劑係可為PVB。
於本發明之一實施例中，該造粒製程係可採用噴霧造粒。
於本發明之一實施例中，該造粒製程係可採用過篩之方式進行。
於本發明之一實施例中，該步驟三中係以150噸±50%之壓力油壓成型出一氮化鋁塊狀體。
於本發明之一實施例中，該步驟四中係以5000PSI~80000PSI之水壓進行冷均壓處理。
於本發明之一實施例中，該步驟五中係以400℃~600℃之低溫去除氮化鋁塊狀體中之抗水氣材料及粘黏劑。
於本發明之一實施例中，該爐體中係設有加熱機構。
於本發明之一實施例中，該氮化鋁塊狀體係設於一燒結盒後再置入爐體中，而該氮化硼粉末與氮氣係填入燒結盒內。
於本發明之一實施例中，該爐體係於燒結至1800℃±20%時通入氮氣。
請參閱『第1圖~第5圖』所示，係分別為本發明步驟一與步驟二之示意圖、本發明步驟三之示意圖、本發明步驟四之示意圖、本發明步驟五之示意圖及本發明步驟六之示意圖。如圖所示：本發明係一種晶圓級氮化鋁基板製造方法，其至少包含有下列步驟：
步驟一：取氮化鋁粉末材料1，而該氮化鋁粉末材料1係為高純度之氮化鋁粉末。
步驟二：於氮化鋁粉末材料1中加入抗水氣材料21及粘黏劑22，並以採用噴霧造粒或過篩之方式進行造粒製程23，將該氮化鋁粉末材料1製成氮化鋁粉末球形顆粒2，其中該抗水氣材料21係可為矽酸鈣及十二烷胺，而該粘黏劑22係可為PVB。
步驟三：將氮化鋁粉末球形顆粒2由鋼模31以10~650噸之油壓壓力成型出一氮化鋁塊狀體3。
步驟四：於水壓壓力槽4中以5000PSI~80000PSI之水壓對塊狀體3進行冷均壓處理。
步驟五：以400℃~600℃低溫方式去除氮化鋁塊狀體3中之抗水氣材料21及粘黏劑22。
步驟六：再將氮化鋁塊狀體3設於一燒結盒61後，置於一設有加熱機構62之爐體6中，並於燒結盒61中填入氮化硼粉末63進行燒結，且於燒結至1800℃±20%時於燒結盒61通入氮氣64。
藉此，本發明可利用上述之步驟有效提升燒結過程之熱均勻性，使塊狀體3依所需製成晶圓級氮化鋁基板後，較不易因 受熱不均而導致有龜裂之情況發生，故，可有效提升晶圓級氮化鋁基板之產品良率，且可製出純度高且品質優良之八吋晶圓級氮化鋁基板，藉以作為高亮度LED照明之主要散熱基板材料。
綜上所述，本發明高純度氮化鋁製造方法可有效改善習用之種種缺點，可製出純度高且品質優良之高純度氮化鋁基板，以應用於高功率LED照明產品，而達到製程簡化、提升產品良率以及有效散熱之功效；進而使本發明之產生能更進步、更實用、更符合消費者使用之所須，確已符合發明專利申請之要件，爰依法提出專利申請。
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍；故，凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾，皆應仍屬本發明專利涵蓋之範圍內。
1‧‧‧氮化鋁粉末材料
2‧‧‧氮化鋁球形顆粒
21‧‧‧抗水氣材料
22‧‧‧粘黏劑
23‧‧‧造粒製程
3‧‧‧氮化鋁塊狀體
31‧‧‧鋼模
4‧‧‧壓力槽
6‧‧‧爐體
61‧‧‧燒結盒
62‧‧‧加熱機構
63‧‧‧氮化硼粉末
64‧‧‧氮氣
第1圖，係本發明步驟一與步驟二之示意圖。
第2圖，係本發明步驟三之示意圖。
第3圖，係本發明步驟四之示意圖。
第4圖，係本發明步驟五之示意圖。
第5圖，係本發明步驟六之示意圖。
3‧‧‧氮化鋁塊狀體
6‧‧‧爐體
61‧‧‧燒結盒
62‧‧‧加熱機構
63‧‧‧氮化硼粉末
64‧‧‧氮氣

Claims (6)

  1. 一種高純度氮化鋁製造方法，包括有下列步驟：步驟一：取氮化鋁粉末材料；步驟二：於氮化鋁粉末材料中加入抗水氣材料及粘黏劑，並以採用噴霧造粒進行造粒製程，將氮化鋁粉末材料製成球形顆粒，其中該抗水氣材料係可為矽酸鈣及十二烷胺，而該粘黏劑係可為PVB；步驟三：將氮化鋁球形顆粒以鋼模油壓成型出一氮化鋁塊狀體；步驟四：將氮化鋁塊狀體進行冷均壓處理；步驟五：以400℃~600℃之低溫方式去除氮化鋁塊狀體中之抗水氣材料及粘黏劑；以及步驟六：再將氮化鋁塊狀體置於一爐體中，並填入氮化硼粉末進行燒結，且於燒結至1800℃±20%時通入氮氣。
  2. 依申請專利範圍第1項所述之高純度氮化鋁製造方法，其中，該造粒製程亦可採用過篩之方式進行。
  3. 依申請專利範圍第1項所述之高純度氮化鋁製造方法，其中，該步驟三中係以10~650噸之壓力油壓成型出一氮化鋁塊狀體。
  4. 依申請專利範圍第1項所述之高純度氮化鋁製造方法，其中，該步驟四中係以5000PSI~80000PSI之水壓進行冷均壓處理。
  5. 依申請專利範圍第1項所述之高純度氮化鋁製造方法，其中，該爐體中係設有加熱機構。
  6. 依申請專利範圍第1項所述之高純度氮化鋁製造方法，其 中，該氮化鋁塊狀體係設於一燒結盒後再置入爐體中，而該氮化硼粉末與氮氣係填入燒結盒內。
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