CN102169949B - 一种发光二极管基板及其制造方法 - Google Patents
一种发光二极管基板及其制造方法 Download PDFInfo
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CN 201110045103 CN102169949B (zh) | 2011-02-25 | 2011-02-25 | 一种发光二极管基板及其制造方法 |
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CN102169949A CN102169949A (zh) | 2011-08-31 |
CN102169949B true CN102169949B (zh) | 2013-10-09 |
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CN103123947B (zh) * | 2012-12-07 | 2018-01-19 | 鹤山丽得电子实业有限公司 | 一种改善各种衬底外延底层长晶质量的方法 |
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JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶GaNの結晶成長方法及び単結晶GaN基板の製造方法と単結晶GaN基板 |
US7223441B2 (en) * | 2004-03-10 | 2007-05-29 | Pilkington North America, Inc. | Method for depositing gallium oxide coatings on flat glass |
CN101746961A (zh) * | 2009-10-19 | 2010-06-23 | 鲁东大学 | 在平板玻璃上沉积多晶β-Ga2O3薄膜的方法 |
CN101728473A (zh) * | 2009-11-03 | 2010-06-09 | 山西光宇半导体照明有限公司 | 一种大功率led芯片支架 |
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Owner name: FOCUS LIGHINGS TECHNOLOGY CO., LTD. Free format text: FORMER NAME: FOCUS LIGHTING (SUZHOU) CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Patentee after: FOCUS LIGHTINGS TECH Co.,Ltd. Address before: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Patentee before: Focus Lightings Tech Inc. |
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CP02 | Change in the address of a patent holder |
Address after: 223800 south of Dongwu Road, Suqian Economic and Technological Development Zone, Jiangsu Province Patentee after: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) Co.,Ltd. Address before: 223800 west side of development avenue of Suqian economic and Technological Development Zone in Jiangsu province (room 2005 of business center) Patentee before: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) Co.,Ltd. |
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Effective date of registration: 20200911 Address after: 223800 west side of development avenue of Suqian economic and Technological Development Zone in Jiangsu province (room 2005 of business center) Patentee after: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) CO.,LTD. Address before: 215123 No. 8 Qing Qing Road, Suzhou Industrial Park, Jiangsu, China Patentee before: FOCUS LIGHTINGS TECH Co.,Ltd. |