DE3683557D1 - Keramische mehrschichtschaltungsplatte. - Google Patents
Keramische mehrschichtschaltungsplatte.Info
- Publication number
- DE3683557D1 DE3683557D1 DE8686305895T DE3683557T DE3683557D1 DE 3683557 D1 DE3683557 D1 DE 3683557D1 DE 8686305895 T DE8686305895 T DE 8686305895T DE 3683557 T DE3683557 T DE 3683557T DE 3683557 D1 DE3683557 D1 DE 3683557D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit board
- multilayer circuit
- ceramic multilayer
- ceramic
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0018—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents
- C03C10/0027—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents containing SiO2, Al2O3, Li2O as main constituents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01055—Cesium [Cs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60171080A JPH0634452B2 (ja) | 1985-08-05 | 1985-08-05 | セラミツクス回路基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3683557D1 true DE3683557D1 (de) | 1992-03-05 |
Family
ID=15916638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686305895T Expired - Lifetime DE3683557D1 (de) | 1985-08-05 | 1986-07-31 | Keramische mehrschichtschaltungsplatte. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4672152A (de) |
EP (1) | EP0211619B1 (de) |
JP (1) | JPH0634452B2 (de) |
DE (1) | DE3683557D1 (de) |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61229389A (ja) * | 1985-04-03 | 1986-10-13 | イビデン株式会社 | セラミツク配線板およびその製造方法 |
US4753694A (en) * | 1986-05-02 | 1988-06-28 | International Business Machines Corporation | Process for forming multilayered ceramic substrate having solid metal conductors |
JPS62265796A (ja) * | 1986-05-14 | 1987-11-18 | 株式会社住友金属セラミックス | セラミツク多層配線基板およびその製造法 |
JPS62287658A (ja) * | 1986-06-06 | 1987-12-14 | Hitachi Ltd | セラミックス多層回路板 |
JPS6318697A (ja) * | 1986-07-11 | 1988-01-26 | 日本電気株式会社 | 多層配線基板 |
JPS63181399A (ja) * | 1987-01-22 | 1988-07-26 | 日本特殊陶業株式会社 | 高熱伝導性厚膜多層配線基板 |
EP0284820A3 (de) * | 1987-03-04 | 1989-03-08 | Canon Kabushiki Kaisha | Elektrisches Verbindungsteil und elektrisches Schaltungsteil und elektrische Schaltungsanordnung mit dem Verbindungsteil |
US4799983A (en) * | 1987-07-20 | 1989-01-24 | International Business Machines Corporation | Multilayer ceramic substrate and process for forming therefor |
US4931144A (en) * | 1987-07-31 | 1990-06-05 | Texas Instruments Incorporated | Self-aligned nonnested sloped via |
US4898767A (en) * | 1987-10-07 | 1990-02-06 | Corning Incorporated | Copper-exuding boroaluminosilicate glasses |
JPH0650792B2 (ja) * | 1987-10-19 | 1994-06-29 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 耐酸化金属導体を含むセラミック構造体及びその製造方法 |
US5147484A (en) * | 1987-10-19 | 1992-09-15 | International Business Machines Corporation | Method for producing multi-layer ceramic substrates with oxidation resistant metalization |
FR2625042B1 (fr) * | 1987-12-22 | 1990-04-20 | Thomson Csf | Structure microelectronique hybride modulaire a haute densite d'integration |
JPH079382Y2 (ja) * | 1987-12-28 | 1995-03-06 | 日本特殊陶業株式会社 | セラミック基板 |
US5117069A (en) * | 1988-03-28 | 1992-05-26 | Prime Computer, Inc. | Circuit board fabrication |
US4935584A (en) * | 1988-05-24 | 1990-06-19 | Tektronix, Inc. | Method of fabricating a printed circuit board and the PCB produced |
JP2610487B2 (ja) * | 1988-06-10 | 1997-05-14 | 株式会社日立製作所 | セラミック積層回路基板 |
US5070047A (en) * | 1988-07-19 | 1991-12-03 | Ferro Corporation | Dielectric compositions |
US5120579A (en) * | 1988-07-19 | 1992-06-09 | Ferro Corporation | Dielectric compositions |
AU3977789A (en) * | 1988-07-19 | 1990-02-19 | Ferro Corporation | Thick film dielectric compositions |
US5164342A (en) * | 1988-10-14 | 1992-11-17 | Ferro Corporation | Low dielectric, low temperature fired glass ceramics |
US5258335A (en) * | 1988-10-14 | 1993-11-02 | Ferro Corporation | Low dielectric, low temperature fired glass ceramics |
US4899118A (en) * | 1988-12-27 | 1990-02-06 | Hughes Aircraft Company | Low temperature cofired ceramic packages for microwave and millimeter wave gallium arsenide integrated circuits |
DE69008551T2 (de) * | 1989-01-09 | 1994-10-27 | Mitsubishi Electric Corp | Antennensystem. |
US5136271A (en) * | 1989-01-09 | 1992-08-04 | Mitsubishi Denki Kabushiki Kaisha | Microwave integrated circuit mountings |
JP3090453B2 (ja) * | 1989-07-10 | 2000-09-18 | 株式会社日立製作所 | 厚膜薄膜積層基板およびそれを用いた電子回路装置 |
US5071793A (en) * | 1990-08-23 | 1991-12-10 | Aluminum Company Of America | Low dielectric inorganic composition for multilayer ceramic package |
US5260119A (en) * | 1990-08-23 | 1993-11-09 | Aluminum Company Of America | Low dielectric inorganic composition for multilayer ceramic package |
US5206190A (en) * | 1990-09-04 | 1993-04-27 | Aluminum Company Of America | Dielectric composition containing cordierite and glass |
US5079194A (en) * | 1990-10-11 | 1992-01-07 | Aluminum Company Of America | Crystal growth inhibitor for glassy low dielectric inorganic composition |
US5118643A (en) * | 1990-10-25 | 1992-06-02 | Aluminum Company Of America | Low dielectric inorganic composition for multilayer ceramic package containing titanium silicate glass |
US5135556A (en) * | 1991-04-08 | 1992-08-04 | Grumman Aerospace Corporation | Method for making fused high density multi-layer integrated circuit module |
US5328751A (en) * | 1991-07-12 | 1994-07-12 | Kabushiki Kaisha Toshiba | Ceramic circuit board with a curved lead terminal |
US5141899A (en) * | 1991-08-26 | 1992-08-25 | Aluminum Company Of America | Low dielectric inorganic composition for multilayer ceramic package containing titanium silicate glass and crystal inhibitor |
US5219799A (en) * | 1991-10-07 | 1993-06-15 | Corning Incorporated | Lithium disilicate-containing glass-ceramics some of which are self-glazing |
US5239448A (en) * | 1991-10-28 | 1993-08-24 | International Business Machines Corporation | Formulation of multichip modules |
US5177034A (en) * | 1991-11-04 | 1993-01-05 | Aluminum Company Of America | Gallium crystal growth inhibitor for glassy low dielectric inorganic composition |
US5316985A (en) * | 1991-12-09 | 1994-05-31 | Aluminum Company Of America | Suppression of crystal growth in low dielectric inorganic composition using ultrafine alumina |
US5226959A (en) * | 1992-03-16 | 1993-07-13 | Aluminum Company Of America | Gallium-containing glassy low dielectric ceramic compositions |
US5312784A (en) * | 1992-08-07 | 1994-05-17 | Aluminum Company Of America | Devitrification inhibitor in low dielectric borosilicate glass |
US5270268A (en) * | 1992-09-23 | 1993-12-14 | Aluminum Company Of America | Aluminum borate devitrification inhibitor in low dielectric borosilicate glass |
US5391522A (en) * | 1993-05-19 | 1995-02-21 | Kabushiki Kaisya Ohara | Glass-ceramic for magnetic disks and method for manufacturing the same |
JP3210503B2 (ja) * | 1993-09-30 | 2001-09-17 | 株式会社東芝 | マルチチップモジュールおよびその製造方法 |
US5546012A (en) * | 1994-04-15 | 1996-08-13 | International Business Machines Corporation | Probe card assembly having a ceramic probe card |
US5507981A (en) * | 1994-05-31 | 1996-04-16 | Tel Ventures, Inc. | Method for molding dental restorations |
JP3822240B2 (ja) * | 1995-02-10 | 2006-09-13 | 旭硝子株式会社 | 耐擦傷性板ガラス |
US5856235A (en) * | 1995-04-12 | 1999-01-05 | Northrop Grumman Corporation | Process of vacuum annealing a thin film metallization on high purity alumina |
JP3372733B2 (ja) * | 1995-11-29 | 2003-02-04 | 京セラ株式会社 | ガラスセラミック焼結体の製造方法および配線基板の製造方法 |
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US5872071A (en) * | 1997-10-07 | 1999-02-16 | National Science Council | Low-fire dielectric composition and its use in laminated microwave dielectric ceramic elements |
US6802894B2 (en) | 1998-12-11 | 2004-10-12 | Jeneric/Pentron Incorporated | Lithium disilicate glass-ceramics |
US6517623B1 (en) | 1998-12-11 | 2003-02-11 | Jeneric/Pentron, Inc. | Lithium disilicate glass ceramics |
US20050127544A1 (en) * | 1998-06-12 | 2005-06-16 | Dmitri Brodkin | High-strength dental restorations |
US6081026A (en) * | 1998-11-13 | 2000-06-27 | Fujitsu Limited | High density signal interposer with power and ground wrap |
US6239485B1 (en) | 1998-11-13 | 2001-05-29 | Fujitsu Limited | Reduced cross-talk noise high density signal interposer with power and ground wrap |
WO2000034196A2 (en) | 1998-12-11 | 2000-06-15 | Jeneric/Pentron Incorporated | Pressable lithium disilicate glass ceramics |
US6159883A (en) * | 1999-01-07 | 2000-12-12 | Advanced Ceramic X Corp. | Ceramic dielectric compositions |
US6174829B1 (en) | 1999-01-07 | 2001-01-16 | Advanced Ceramic X Corp. | Ceramic dielectric compositions |
US6430058B1 (en) * | 1999-12-02 | 2002-08-06 | Intel Corporation | Integrated circuit package |
US6413849B1 (en) | 1999-12-28 | 2002-07-02 | Intel Corporation | Integrated circuit package with surface mounted pins on an organic substrate and method of fabrication therefor |
JP3407716B2 (ja) * | 2000-06-08 | 2003-05-19 | 株式会社村田製作所 | 複合積層電子部品 |
JP3818030B2 (ja) * | 2000-07-21 | 2006-09-06 | 株式会社村田製作所 | 多層基板の製造方法 |
US20040113127A1 (en) * | 2002-12-17 | 2004-06-17 | Min Gary Yonggang | Resistor compositions having a substantially neutral temperature coefficient of resistance and methods and compositions relating thereto |
JP4342353B2 (ja) * | 2004-03-17 | 2009-10-14 | 三洋電機株式会社 | 回路装置およびその製造方法 |
US7939934B2 (en) * | 2005-03-16 | 2011-05-10 | Tessera, Inc. | Microelectronic packages and methods therefor |
CN101473387B (zh) * | 2006-06-23 | 2011-07-27 | 株式会社村田制作所 | 层叠型陶瓷电子元件 |
KR100840924B1 (ko) * | 2007-03-30 | 2008-06-24 | 삼성전기주식회사 | 유크립타이트 세라믹 필러 및 이를 포함하는 절연 복합재 |
JP5751744B2 (ja) * | 2009-03-27 | 2015-07-22 | 株式会社オハラ | ガラス |
US9420707B2 (en) | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
US8207453B2 (en) | 2009-12-17 | 2012-06-26 | Intel Corporation | Glass core substrate for integrated circuit devices and methods of making the same |
PT2765977E (pt) * | 2011-10-14 | 2016-03-29 | Ivoclar Vivadent Ag | Vitrocerâmica de silicato de lítio e vidro de silicato de lítio contendo um óxido metálico monovalente |
WO2013133827A1 (en) | 2012-03-07 | 2013-09-12 | Intel Corporation | Glass clad microelectronic substrate |
CN106486638B (zh) * | 2016-10-14 | 2020-07-10 | 东莞塔菲尔新能源科技有限公司 | 一种电池绝缘环及其制备方法及使用该绝缘环的动力电池 |
CN108455979B (zh) * | 2018-04-18 | 2020-06-30 | 常熟理工学院 | 一种超低介电常数微波介质陶瓷材料及其制备方法 |
WO2020129858A1 (ja) * | 2018-12-20 | 2020-06-25 | 株式会社村田製作所 | 積層体、電子部品及び積層体の製造方法 |
JP6927251B2 (ja) * | 2019-07-08 | 2021-08-25 | Tdk株式会社 | ガラスセラミックス焼結体および配線基板 |
CN110828425A (zh) * | 2019-10-17 | 2020-02-21 | 合肥圣达电子科技实业有限公司 | 一种用于抗辐照的封装结构及其制作方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3841950A (en) * | 1971-05-25 | 1974-10-15 | Owens Illinois Inc | Glasses and glass-ceramics and products made therefrom |
US3968193A (en) * | 1971-08-27 | 1976-07-06 | International Business Machines Corporation | Firing process for forming a multilayer glass-metal module |
US4192688A (en) * | 1972-07-07 | 1980-03-11 | Owens-Illinois, Inc. | Product and process for forming same |
DE2451121A1 (de) * | 1973-10-31 | 1975-05-07 | Gen Electric | Verfahren zum herstellen von glaskeramiken |
JPS5843355B2 (ja) * | 1976-12-20 | 1983-09-26 | 日本特殊陶業株式会社 | セラミツクと低膨張性金属部材の封止構造体 |
US4192665A (en) * | 1977-09-07 | 1980-03-11 | Corning Glass Works | Rapidly crystallized beta-spodumene glass-ceramic materials |
US4413061A (en) * | 1978-02-06 | 1983-11-01 | International Business Machines Corporation | Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper |
US4301324A (en) * | 1978-02-06 | 1981-11-17 | International Business Machines Corporation | Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper |
JPS5563900A (en) * | 1978-11-08 | 1980-05-14 | Fujitsu Ltd | Multilyaer ceramic circuit board |
JPS5817651A (ja) * | 1981-07-24 | 1983-02-01 | Hitachi Ltd | 多層回路板とその製造方法 |
JPS599992A (ja) * | 1982-07-08 | 1984-01-19 | 株式会社日立製作所 | 多層配線基板の製造方法 |
JPS5911700A (ja) * | 1982-07-12 | 1984-01-21 | 株式会社日立製作所 | セラミツク多層配線回路板 |
JPS59130005A (ja) * | 1983-01-18 | 1984-07-26 | 旭硝子株式会社 | 厚膜回路絶縁層用組成物 |
JPS6028296A (ja) * | 1983-07-27 | 1985-02-13 | 株式会社日立製作所 | セラミツク多層配線回路板 |
JPS6030196A (ja) * | 1983-07-28 | 1985-02-15 | 富士通株式会社 | 多層回路基板の製造方法 |
JPS60136294A (ja) * | 1983-12-23 | 1985-07-19 | 株式会社日立製作所 | セラミック多層配線回路板 |
JPS60260465A (ja) * | 1984-06-01 | 1985-12-23 | 鳴海製陶株式会社 | 低温焼成セラミツクス |
EP0193782A3 (de) * | 1985-03-04 | 1987-11-25 | Olin Corporation | Mehrschichten- und Steckkontaktenmatrix |
-
1985
- 1985-08-05 JP JP60171080A patent/JPH0634452B2/ja not_active Expired - Lifetime
-
1986
- 1986-07-23 US US06/888,410 patent/US4672152A/en not_active Expired - Fee Related
- 1986-07-31 DE DE8686305895T patent/DE3683557D1/de not_active Expired - Lifetime
- 1986-07-31 EP EP86305895A patent/EP0211619B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0211619A3 (en) | 1988-08-31 |
JPH0634452B2 (ja) | 1994-05-02 |
JPS6232695A (ja) | 1987-02-12 |
EP0211619B1 (de) | 1992-01-22 |
US4672152A (en) | 1987-06-09 |
EP0211619A2 (de) | 1987-02-25 |
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