DE3683557D1 - Keramische mehrschichtschaltungsplatte. - Google Patents

Keramische mehrschichtschaltungsplatte.

Info

Publication number
DE3683557D1
DE3683557D1 DE8686305895T DE3683557T DE3683557D1 DE 3683557 D1 DE3683557 D1 DE 3683557D1 DE 8686305895 T DE8686305895 T DE 8686305895T DE 3683557 T DE3683557 T DE 3683557T DE 3683557 D1 DE3683557 D1 DE 3683557D1
Authority
DE
Germany
Prior art keywords
circuit board
multilayer circuit
ceramic multilayer
ceramic
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686305895T
Other languages
English (en)
Inventor
Hiroichi Shinohara
Nobuyuki Ushifusa
Kousei Nagayama
Satoru Ogihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3683557D1 publication Critical patent/DE3683557D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383Multilayer substrates
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0018Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents
    • C03C10/0027Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents containing SiO2, Al2O3, Li2O as main constituents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01055Cesium [Cs]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676Single layer compositions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/901Printed circuit
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dispersion Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Glass Compositions (AREA)
DE8686305895T 1985-08-05 1986-07-31 Keramische mehrschichtschaltungsplatte. Expired - Lifetime DE3683557D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60171080A JPH0634452B2 (ja) 1985-08-05 1985-08-05 セラミツクス回路基板

Publications (1)

Publication Number Publication Date
DE3683557D1 true DE3683557D1 (de) 1992-03-05

Family

ID=15916638

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686305895T Expired - Lifetime DE3683557D1 (de) 1985-08-05 1986-07-31 Keramische mehrschichtschaltungsplatte.

Country Status (4)

Country Link
US (1) US4672152A (de)
EP (1) EP0211619B1 (de)
JP (1) JPH0634452B2 (de)
DE (1) DE3683557D1 (de)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229389A (ja) * 1985-04-03 1986-10-13 イビデン株式会社 セラミツク配線板およびその製造方法
US4753694A (en) * 1986-05-02 1988-06-28 International Business Machines Corporation Process for forming multilayered ceramic substrate having solid metal conductors
JPS62265796A (ja) * 1986-05-14 1987-11-18 株式会社住友金属セラミックス セラミツク多層配線基板およびその製造法
JPS62287658A (ja) * 1986-06-06 1987-12-14 Hitachi Ltd セラミックス多層回路板
JPS6318697A (ja) * 1986-07-11 1988-01-26 日本電気株式会社 多層配線基板
JPS63181399A (ja) * 1987-01-22 1988-07-26 日本特殊陶業株式会社 高熱伝導性厚膜多層配線基板
EP0284820A3 (de) * 1987-03-04 1989-03-08 Canon Kabushiki Kaisha Elektrisches Verbindungsteil und elektrisches Schaltungsteil und elektrische Schaltungsanordnung mit dem Verbindungsteil
US4799983A (en) * 1987-07-20 1989-01-24 International Business Machines Corporation Multilayer ceramic substrate and process for forming therefor
US4931144A (en) * 1987-07-31 1990-06-05 Texas Instruments Incorporated Self-aligned nonnested sloped via
US4898767A (en) * 1987-10-07 1990-02-06 Corning Incorporated Copper-exuding boroaluminosilicate glasses
JPH0650792B2 (ja) * 1987-10-19 1994-06-29 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 耐酸化金属導体を含むセラミック構造体及びその製造方法
US5147484A (en) * 1987-10-19 1992-09-15 International Business Machines Corporation Method for producing multi-layer ceramic substrates with oxidation resistant metalization
FR2625042B1 (fr) * 1987-12-22 1990-04-20 Thomson Csf Structure microelectronique hybride modulaire a haute densite d'integration
JPH079382Y2 (ja) * 1987-12-28 1995-03-06 日本特殊陶業株式会社 セラミック基板
US5117069A (en) * 1988-03-28 1992-05-26 Prime Computer, Inc. Circuit board fabrication
US4935584A (en) * 1988-05-24 1990-06-19 Tektronix, Inc. Method of fabricating a printed circuit board and the PCB produced
JP2610487B2 (ja) * 1988-06-10 1997-05-14 株式会社日立製作所 セラミック積層回路基板
US5070047A (en) * 1988-07-19 1991-12-03 Ferro Corporation Dielectric compositions
US5120579A (en) * 1988-07-19 1992-06-09 Ferro Corporation Dielectric compositions
AU3977789A (en) * 1988-07-19 1990-02-19 Ferro Corporation Thick film dielectric compositions
US5164342A (en) * 1988-10-14 1992-11-17 Ferro Corporation Low dielectric, low temperature fired glass ceramics
US5258335A (en) * 1988-10-14 1993-11-02 Ferro Corporation Low dielectric, low temperature fired glass ceramics
US4899118A (en) * 1988-12-27 1990-02-06 Hughes Aircraft Company Low temperature cofired ceramic packages for microwave and millimeter wave gallium arsenide integrated circuits
DE69008551T2 (de) * 1989-01-09 1994-10-27 Mitsubishi Electric Corp Antennensystem.
US5136271A (en) * 1989-01-09 1992-08-04 Mitsubishi Denki Kabushiki Kaisha Microwave integrated circuit mountings
JP3090453B2 (ja) * 1989-07-10 2000-09-18 株式会社日立製作所 厚膜薄膜積層基板およびそれを用いた電子回路装置
US5071793A (en) * 1990-08-23 1991-12-10 Aluminum Company Of America Low dielectric inorganic composition for multilayer ceramic package
US5260119A (en) * 1990-08-23 1993-11-09 Aluminum Company Of America Low dielectric inorganic composition for multilayer ceramic package
US5206190A (en) * 1990-09-04 1993-04-27 Aluminum Company Of America Dielectric composition containing cordierite and glass
US5079194A (en) * 1990-10-11 1992-01-07 Aluminum Company Of America Crystal growth inhibitor for glassy low dielectric inorganic composition
US5118643A (en) * 1990-10-25 1992-06-02 Aluminum Company Of America Low dielectric inorganic composition for multilayer ceramic package containing titanium silicate glass
US5135556A (en) * 1991-04-08 1992-08-04 Grumman Aerospace Corporation Method for making fused high density multi-layer integrated circuit module
US5328751A (en) * 1991-07-12 1994-07-12 Kabushiki Kaisha Toshiba Ceramic circuit board with a curved lead terminal
US5141899A (en) * 1991-08-26 1992-08-25 Aluminum Company Of America Low dielectric inorganic composition for multilayer ceramic package containing titanium silicate glass and crystal inhibitor
US5219799A (en) * 1991-10-07 1993-06-15 Corning Incorporated Lithium disilicate-containing glass-ceramics some of which are self-glazing
US5239448A (en) * 1991-10-28 1993-08-24 International Business Machines Corporation Formulation of multichip modules
US5177034A (en) * 1991-11-04 1993-01-05 Aluminum Company Of America Gallium crystal growth inhibitor for glassy low dielectric inorganic composition
US5316985A (en) * 1991-12-09 1994-05-31 Aluminum Company Of America Suppression of crystal growth in low dielectric inorganic composition using ultrafine alumina
US5226959A (en) * 1992-03-16 1993-07-13 Aluminum Company Of America Gallium-containing glassy low dielectric ceramic compositions
US5312784A (en) * 1992-08-07 1994-05-17 Aluminum Company Of America Devitrification inhibitor in low dielectric borosilicate glass
US5270268A (en) * 1992-09-23 1993-12-14 Aluminum Company Of America Aluminum borate devitrification inhibitor in low dielectric borosilicate glass
US5391522A (en) * 1993-05-19 1995-02-21 Kabushiki Kaisya Ohara Glass-ceramic for magnetic disks and method for manufacturing the same
JP3210503B2 (ja) * 1993-09-30 2001-09-17 株式会社東芝 マルチチップモジュールおよびその製造方法
US5546012A (en) * 1994-04-15 1996-08-13 International Business Machines Corporation Probe card assembly having a ceramic probe card
US5507981A (en) * 1994-05-31 1996-04-16 Tel Ventures, Inc. Method for molding dental restorations
JP3822240B2 (ja) * 1995-02-10 2006-09-13 旭硝子株式会社 耐擦傷性板ガラス
US5856235A (en) * 1995-04-12 1999-01-05 Northrop Grumman Corporation Process of vacuum annealing a thin film metallization on high purity alumina
JP3372733B2 (ja) * 1995-11-29 2003-02-04 京セラ株式会社 ガラスセラミック焼結体の製造方法および配線基板の製造方法
TW396350B (en) * 1996-12-04 2000-07-01 Nat Science Council Dielectric composition, slurry for use in the tape casting process, porcess for producing a ceramic product and process for preparing multilayer ceramic package
US5872071A (en) * 1997-10-07 1999-02-16 National Science Council Low-fire dielectric composition and its use in laminated microwave dielectric ceramic elements
US6802894B2 (en) 1998-12-11 2004-10-12 Jeneric/Pentron Incorporated Lithium disilicate glass-ceramics
US6517623B1 (en) 1998-12-11 2003-02-11 Jeneric/Pentron, Inc. Lithium disilicate glass ceramics
US20050127544A1 (en) * 1998-06-12 2005-06-16 Dmitri Brodkin High-strength dental restorations
US6081026A (en) * 1998-11-13 2000-06-27 Fujitsu Limited High density signal interposer with power and ground wrap
US6239485B1 (en) 1998-11-13 2001-05-29 Fujitsu Limited Reduced cross-talk noise high density signal interposer with power and ground wrap
WO2000034196A2 (en) 1998-12-11 2000-06-15 Jeneric/Pentron Incorporated Pressable lithium disilicate glass ceramics
US6159883A (en) * 1999-01-07 2000-12-12 Advanced Ceramic X Corp. Ceramic dielectric compositions
US6174829B1 (en) 1999-01-07 2001-01-16 Advanced Ceramic X Corp. Ceramic dielectric compositions
US6430058B1 (en) * 1999-12-02 2002-08-06 Intel Corporation Integrated circuit package
US6413849B1 (en) 1999-12-28 2002-07-02 Intel Corporation Integrated circuit package with surface mounted pins on an organic substrate and method of fabrication therefor
JP3407716B2 (ja) * 2000-06-08 2003-05-19 株式会社村田製作所 複合積層電子部品
JP3818030B2 (ja) * 2000-07-21 2006-09-06 株式会社村田製作所 多層基板の製造方法
US20040113127A1 (en) * 2002-12-17 2004-06-17 Min Gary Yonggang Resistor compositions having a substantially neutral temperature coefficient of resistance and methods and compositions relating thereto
JP4342353B2 (ja) * 2004-03-17 2009-10-14 三洋電機株式会社 回路装置およびその製造方法
US7939934B2 (en) * 2005-03-16 2011-05-10 Tessera, Inc. Microelectronic packages and methods therefor
CN101473387B (zh) * 2006-06-23 2011-07-27 株式会社村田制作所 层叠型陶瓷电子元件
KR100840924B1 (ko) * 2007-03-30 2008-06-24 삼성전기주식회사 유크립타이트 세라믹 필러 및 이를 포함하는 절연 복합재
JP5751744B2 (ja) * 2009-03-27 2015-07-22 株式会社オハラ ガラス
US9420707B2 (en) 2009-12-17 2016-08-16 Intel Corporation Substrate for integrated circuit devices including multi-layer glass core and methods of making the same
US8207453B2 (en) 2009-12-17 2012-06-26 Intel Corporation Glass core substrate for integrated circuit devices and methods of making the same
PT2765977E (pt) * 2011-10-14 2016-03-29 Ivoclar Vivadent Ag Vitrocerâmica de silicato de lítio e vidro de silicato de lítio contendo um óxido metálico monovalente
WO2013133827A1 (en) 2012-03-07 2013-09-12 Intel Corporation Glass clad microelectronic substrate
CN106486638B (zh) * 2016-10-14 2020-07-10 东莞塔菲尔新能源科技有限公司 一种电池绝缘环及其制备方法及使用该绝缘环的动力电池
CN108455979B (zh) * 2018-04-18 2020-06-30 常熟理工学院 一种超低介电常数微波介质陶瓷材料及其制备方法
WO2020129858A1 (ja) * 2018-12-20 2020-06-25 株式会社村田製作所 積層体、電子部品及び積層体の製造方法
JP6927251B2 (ja) * 2019-07-08 2021-08-25 Tdk株式会社 ガラスセラミックス焼結体および配線基板
CN110828425A (zh) * 2019-10-17 2020-02-21 合肥圣达电子科技实业有限公司 一种用于抗辐照的封装结构及其制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841950A (en) * 1971-05-25 1974-10-15 Owens Illinois Inc Glasses and glass-ceramics and products made therefrom
US3968193A (en) * 1971-08-27 1976-07-06 International Business Machines Corporation Firing process for forming a multilayer glass-metal module
US4192688A (en) * 1972-07-07 1980-03-11 Owens-Illinois, Inc. Product and process for forming same
DE2451121A1 (de) * 1973-10-31 1975-05-07 Gen Electric Verfahren zum herstellen von glaskeramiken
JPS5843355B2 (ja) * 1976-12-20 1983-09-26 日本特殊陶業株式会社 セラミツクと低膨張性金属部材の封止構造体
US4192665A (en) * 1977-09-07 1980-03-11 Corning Glass Works Rapidly crystallized beta-spodumene glass-ceramic materials
US4413061A (en) * 1978-02-06 1983-11-01 International Business Machines Corporation Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
US4301324A (en) * 1978-02-06 1981-11-17 International Business Machines Corporation Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
JPS5563900A (en) * 1978-11-08 1980-05-14 Fujitsu Ltd Multilyaer ceramic circuit board
JPS5817651A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 多層回路板とその製造方法
JPS599992A (ja) * 1982-07-08 1984-01-19 株式会社日立製作所 多層配線基板の製造方法
JPS5911700A (ja) * 1982-07-12 1984-01-21 株式会社日立製作所 セラミツク多層配線回路板
JPS59130005A (ja) * 1983-01-18 1984-07-26 旭硝子株式会社 厚膜回路絶縁層用組成物
JPS6028296A (ja) * 1983-07-27 1985-02-13 株式会社日立製作所 セラミツク多層配線回路板
JPS6030196A (ja) * 1983-07-28 1985-02-15 富士通株式会社 多層回路基板の製造方法
JPS60136294A (ja) * 1983-12-23 1985-07-19 株式会社日立製作所 セラミック多層配線回路板
JPS60260465A (ja) * 1984-06-01 1985-12-23 鳴海製陶株式会社 低温焼成セラミツクス
EP0193782A3 (de) * 1985-03-04 1987-11-25 Olin Corporation Mehrschichten- und Steckkontaktenmatrix

Also Published As

Publication number Publication date
EP0211619A3 (en) 1988-08-31
JPH0634452B2 (ja) 1994-05-02
JPS6232695A (ja) 1987-02-12
EP0211619B1 (de) 1992-01-22
US4672152A (en) 1987-06-09
EP0211619A2 (de) 1987-02-25

Similar Documents

Publication Publication Date Title
DE3683557D1 (de) Keramische mehrschichtschaltungsplatte.
DE3483292D1 (de) Keramische mehrschichtleiterplatte.
DE69217285D1 (de) Keramische Leiterplatte
AU563932B2 (en) Multilayer ceramic circuit board
DE69015878D1 (de) Mehrschichtleiterplattenstruktur.
DE3880385T2 (de) Gedruckte Leiterplatte.
DE3775625D1 (de) Gedruckte leiterplatte.
DE3578811D1 (de) Gedruckte schaltung.
DE69007452D1 (de) Mehrlagenschaltungsstruktur.
DE68922118T2 (de) Schaltungsplatte.
DE3485957T2 (de) Gedruckte schaltungsplatte.
DE68908687D1 (de) Gedruckte Schaltungsplatte.
DE3881973T2 (de) Mehrschichtschaltungsplatte.
DE3583178D1 (de) Gedruckte leiterplatte.
EP0265340A3 (en) Multilayer ceramic copper circuit board
DE3852073D1 (de) Angepasste gedruckte Schaltung.
KR900702760A (ko) 인쇄회로기판
DE3681120D1 (de) Bei niedriger temperatur gefrittete keramische mehrschichtschaltungsplatte.
DE3771707D1 (de) Gedruckte leiterplatte.
DE3679627D1 (de) Mehrschichtige gedruckte schaltungsplatte.
DE3851118D1 (de) Leiterplatte.
DE68906160D1 (de) Gedruckte schaltungsplatte.
DE3850626D1 (de) Leiterplatte.
NO861792L (no) Styrekrets.
DE3872865T2 (de) Gedruckte leiterkarte.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee