JP4342353B2 - 回路装置およびその製造方法 - Google Patents
回路装置およびその製造方法 Download PDFInfo
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- JP4342353B2 JP4342353B2 JP2004077237A JP2004077237A JP4342353B2 JP 4342353 B2 JP4342353 B2 JP 4342353B2 JP 2004077237 A JP2004077237 A JP 2004077237A JP 2004077237 A JP2004077237 A JP 2004077237A JP 4342353 B2 JP4342353 B2 JP 4342353B2
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- film
- insulating resin
- circuit device
- insulating film
- resin film
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
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- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
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- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
Description
Claims (6)
- 第1の絶縁膜に埋め込まれ、互いに厚みの異なる複数の第1の回路素子と、
前記第1の絶縁膜の上に形成された第2の絶縁膜とを備えており、
前記第1の絶縁膜は、前記第1の絶縁膜の前記第2の絶縁膜側の表面から、前記複数の第1の回路素子の前記第2の絶縁膜とは反対側の表面までの厚みが均一である回路装置の製造方法であって、
前記第1の絶縁膜に前記複数の第1の回路素子を埋め込む工程と、
前記第1の絶縁膜上に第2の絶縁膜を形成する工程と、
前記第2の絶縁膜上に、その第2の絶縁膜の表面に凹部を含む積層膜を形成する工程と、
前記凹部の内部に埋込材料を埋め込み、前記凹部の内部に第2の回路素子の一部または全部を構成する埋込部材を形成する工程と、
を含むことを特徴とする回路装置の製造方法。 - 請求項1に記載の回路装置の製造方法であって、
前記埋込部材を形成する工程は、
前記膜上に埋込材料を塗布する工程と、
前記凹部の内部に掻取手段により前記埋込材料を埋め込む工程と、
を含むことを特徴とする回路装置の製造方法。 - 請求項1または2に記載の回路装置の製造方法において、
前記表面に凹部を備える膜を形成する工程は、
第一の膜上に開口部を有する第二の膜を圧着してなる積層膜である、表面に凹部を備える膜を形成する工程を含むことを特徴とする回路装置の製造方法。 - 請求項1乃至3いずれかに記載の回路装置の製造方法において、
前記凹部の外部にある前記埋込材料を除去する工程をさらに含むことを特徴とする回路装置の製造方法。 - 第1の絶縁膜に埋め込まれ、互いに厚みの異なる複数の第1の回路素子と、
前記第1の絶縁膜の上方に形成された第2の絶縁膜とを備えており、
前記第1の絶縁膜は、前記第1の絶縁膜の前記第2の絶縁膜側の表面から、前記複数の第1の回路素子の前記第2の絶縁膜とは反対側の表面までの厚みが均一である回路装置であって、
前記第1の絶縁膜上に、前記第2の絶縁膜と、積層膜と、前記積層膜に埋め込まれ、第2の回路素子の一部または全部を構成する一以上の部材とを備え、
前記一以上の部材のうちいずれかの部材の上部の一面と、前記積層膜の上部の一面と、が同一平面を形成し、
前記一以上の部材のうちいずれかの部材の下部の一面と、前記積層膜の下部の一面と、が同一平面を形成するように構成されていることを特徴とする回路装置。 - 前記第2の回路素子は、前記複数の第1の回路素子間の上方を覆うように配置されていることを特徴とする請求項5に記載の回路装置。
Priority Applications (4)
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JP2004077237A JP4342353B2 (ja) | 2004-03-17 | 2004-03-17 | 回路装置およびその製造方法 |
TW94106753A TWI262539B (en) | 2004-03-17 | 2005-03-07 | Circuit device and manufacturing method thereof |
CNB2005100558023A CN100358101C (zh) | 2004-03-17 | 2005-03-16 | 电路装置及其制造方法 |
US11/082,151 US7791120B2 (en) | 2004-03-17 | 2005-03-16 | Circuit device and manufacturing method thereof |
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US (1) | US7791120B2 (ja) |
JP (1) | JP4342353B2 (ja) |
CN (1) | CN100358101C (ja) |
TW (1) | TWI262539B (ja) |
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JP2007220792A (ja) * | 2006-02-15 | 2007-08-30 | Sony Corp | ハイブリットモジュールの製造方法 |
JP4559993B2 (ja) | 2006-03-29 | 2010-10-13 | 株式会社東芝 | 半導体装置の製造方法 |
JP4888072B2 (ja) * | 2006-11-16 | 2012-02-29 | セイコーエプソン株式会社 | 電子基板の製造方法 |
JP4888073B2 (ja) * | 2006-11-16 | 2012-02-29 | セイコーエプソン株式会社 | 電子基板の製造方法 |
CN101690434B (zh) * | 2007-06-26 | 2011-08-17 | 株式会社村田制作所 | 元器件内置基板的制造方法 |
KR100945285B1 (ko) * | 2007-09-18 | 2010-03-03 | 삼성전기주식회사 | 전자소자 내장 인쇄회로기판 및 그 제조 방법 |
JP4504434B2 (ja) | 2008-02-14 | 2010-07-14 | 株式会社東芝 | 集積半導体装置 |
JP5589314B2 (ja) * | 2009-06-25 | 2014-09-17 | 株式会社リコー | 電子部品モジュールの製造方法 |
CN102136465B (zh) * | 2010-01-27 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | 微电容mos变容管和变容二极管的开路去嵌测试结构 |
JP5662277B2 (ja) * | 2011-08-08 | 2015-01-28 | 株式会社東芝 | 半導体発光装置及び発光モジュール |
US8890284B2 (en) * | 2013-02-22 | 2014-11-18 | Infineon Technologies Ag | Semiconductor device |
US20160218092A1 (en) * | 2015-01-27 | 2016-07-28 | Mediatek Inc. | Chip package with embedded passive device |
JP6716967B2 (ja) * | 2016-03-04 | 2020-07-01 | 富士ゼロックス株式会社 | 半導体パッケージ及び半導体パッケージの製造方法 |
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CN1670910A (zh) | 2005-09-21 |
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