DE3502180A1 - Festkoerperrelais - Google Patents

Festkoerperrelais

Info

Publication number
DE3502180A1
DE3502180A1 DE19853502180 DE3502180A DE3502180A1 DE 3502180 A1 DE3502180 A1 DE 3502180A1 DE 19853502180 DE19853502180 DE 19853502180 DE 3502180 A DE3502180 A DE 3502180A DE 3502180 A1 DE3502180 A1 DE 3502180A1
Authority
DE
Germany
Prior art keywords
stack
voltage
source
gate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19853502180
Other languages
German (de)
English (en)
Inventor
Howard William Santa Ana Calif. Collins
Daniel M. Riverside Calif. Kinzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/581,784 external-priority patent/US4777387A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of DE3502180A1 publication Critical patent/DE3502180A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Light Receiving Elements (AREA)
DE19853502180 1984-01-23 1985-01-23 Festkoerperrelais Ceased DE3502180A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US57330584A 1984-01-23 1984-01-23
US58178584A 1984-02-21 1984-02-21
US06/581,784 US4777387A (en) 1984-02-21 1984-02-21 Fast turn-off circuit for photovoltaic driven MOSFET

Publications (1)

Publication Number Publication Date
DE3502180A1 true DE3502180A1 (de) 1985-08-01

Family

ID=27416151

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19853502180 Ceased DE3502180A1 (de) 1984-01-23 1985-01-23 Festkoerperrelais
DE3546524A Expired - Lifetime DE3546524C2 (https=) 1984-01-23 1985-01-23

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3546524A Expired - Lifetime DE3546524C2 (https=) 1984-01-23 1985-01-23

Country Status (5)

Country Link
JP (2) JPH0645530A (https=)
KR (1) KR900000829B1 (https=)
DE (2) DE3502180A1 (https=)
GB (3) GB2154820B (https=)
IT (1) IT1183281B (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3708812A1 (de) * 1986-03-24 1987-10-08 Matsushita Electric Works Ltd Halbleiterrelais und verfahren zu seiner herstellung
DE3832463A1 (de) * 1987-09-24 1989-04-13 Agency Ind Science Techn Optische ansteuerschaltung und halbleitervorrichtung zur verwirklichung dieser ansteuerschaltung
EP0226395A3 (en) * 1985-12-04 1989-04-19 Nec Corporation Solid state relay having a thyristor discharge circuit
EP0304951A3 (en) * 1987-08-28 1990-03-14 Siemens Aktiengesellschaft Optical coupler
DE4005835A1 (de) * 1989-02-23 1990-08-30 Agency Ind Science Techn Halbleitervorrichtung mit uebereinandergeschichteten fotoelektrischen wandlern
DE4206393A1 (de) * 1992-02-29 1993-09-16 Mikroelektronik Und Technologi Halbleiterrelais und verfahren zu seiner herstellung

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224548A (ja) * 1985-03-28 1986-10-06 Toshiba Corp 電話機
FR2590750B1 (fr) * 1985-11-22 1991-05-10 Telemecanique Electrique Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif
US4864126A (en) * 1988-06-17 1989-09-05 Hewlett-Packard Company Solid state relay with optically controlled shunt and series enhancement circuit
JP2001053597A (ja) 1999-08-06 2001-02-23 Matsushita Electric Works Ltd 照度センサおよび電子式自動点滅器
KR100864918B1 (ko) * 2001-12-26 2008-10-22 엘지디스플레이 주식회사 액정표시장치의 데이터 구동 장치
RU2369007C2 (ru) * 2007-06-27 2009-09-27 Ставропольский военный институт связи ракетных войск Устройство согласования на основе оптоэлектронного ключа
US9214935B2 (en) * 2012-05-17 2015-12-15 Rockwell Automation Technologies, Inc. Output module for industrial control with sink and source capability and low heat dissipation
US10411150B2 (en) * 2016-12-30 2019-09-10 Texas Instruments Incorporated Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422527A (en) * 1965-06-21 1969-01-21 Int Rectifier Corp Method of manufacture of high voltage solar cell
US3586930A (en) * 1968-03-11 1971-06-22 Philips Corp High frequency,high power igfet with interdigital electrodes and plural looped gate
DE2128536B2 (de) * 1970-06-10 1980-09-25 Hitachi, Ltd., Tokio Halbleiteranordnung aus zwei Feldeffekttransistoren von gleichem Aufbau
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
US4296331A (en) * 1979-08-09 1981-10-20 Theta-Corporation Optically coupled electric power relay
WO1983000746A1 (en) * 1981-08-27 1983-03-03 Motorola Inc Solid-state relay and regulator
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
US4423341A (en) * 1981-01-02 1983-12-27 Sperry Corporation Fast switching field effect transistor driver circuit

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116112B2 (https=) * 1971-08-04 1976-05-21
JPS5522947B2 (https=) * 1973-04-25 1980-06-19
FR2311452A1 (fr) * 1975-05-16 1976-12-10 Thomson Csf Dispositif a semi-conducteur pour commutation rapide de puissance et appareil comportant un tel dispositif
JPS5284982A (en) * 1976-01-06 1977-07-14 Sharp Corp High dielectric strength field effect semiconductor device
JPS5289083A (en) * 1976-01-19 1977-07-26 Matsushita Electric Ind Co Ltd Production of semiconductor photoelectric converting element
GB1602889A (en) * 1978-05-30 1981-11-18 Lidorenko N S Semiconductor photovoltaic generator and a method of manufacturing same
JPS554948A (en) * 1978-06-28 1980-01-14 Hitachi Ltd Mis resistance circuit
JPS5615079A (en) * 1979-07-16 1981-02-13 Mitsubishi Electric Corp Insulated gate field effect transistor couple
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS616711Y2 (https=) * 1980-05-12 1986-02-28
JPS5842269A (ja) * 1981-09-05 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型可変抵抗器
US4492883A (en) * 1982-06-21 1985-01-08 Eaton Corporation Unpowered fast gate turn-off FET
US4481434A (en) * 1982-06-21 1984-11-06 Eaton Corporation Self regenerative fast gate turn-off FET
US4500801A (en) * 1982-06-21 1985-02-19 Eaton Corporation Self-powered nonregenerative fast gate turn-off FET
US4540893A (en) * 1983-05-31 1985-09-10 General Electric Company Controlled switching of non-regenerative power semiconductors

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422527A (en) * 1965-06-21 1969-01-21 Int Rectifier Corp Method of manufacture of high voltage solar cell
US3586930A (en) * 1968-03-11 1971-06-22 Philips Corp High frequency,high power igfet with interdigital electrodes and plural looped gate
DE2128536B2 (de) * 1970-06-10 1980-09-25 Hitachi, Ltd., Tokio Halbleiteranordnung aus zwei Feldeffekttransistoren von gleichem Aufbau
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
US4296331A (en) * 1979-08-09 1981-10-20 Theta-Corporation Optically coupled electric power relay
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
US4423341A (en) * 1981-01-02 1983-12-27 Sperry Corporation Fast switching field effect transistor driver circuit
WO1983000746A1 (en) * 1981-08-27 1983-03-03 Motorola Inc Solid-state relay and regulator

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HERFURTH, Michael: Ansteuerschaltungen für SIPMOS-Transistoren im Schaltbetrieb. In: Siemens Components 18 (1980) Hd.5, S.218-224
RODRIGUEZ, José, SACK, Lothar: Schnelle Ansteuer- und Schutzschaltung für Feldeffekt-Leistungstransistoren. In: Elektronik 18/9.9.1983, S.125-127

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0226395A3 (en) * 1985-12-04 1989-04-19 Nec Corporation Solid state relay having a thyristor discharge circuit
DE3708812A1 (de) * 1986-03-24 1987-10-08 Matsushita Electric Works Ltd Halbleiterrelais und verfahren zu seiner herstellung
EP0304951A3 (en) * 1987-08-28 1990-03-14 Siemens Aktiengesellschaft Optical coupler
DE3832463A1 (de) * 1987-09-24 1989-04-13 Agency Ind Science Techn Optische ansteuerschaltung und halbleitervorrichtung zur verwirklichung dieser ansteuerschaltung
DE4005835A1 (de) * 1989-02-23 1990-08-30 Agency Ind Science Techn Halbleitervorrichtung mit uebereinandergeschichteten fotoelektrischen wandlern
DE4206393A1 (de) * 1992-02-29 1993-09-16 Mikroelektronik Und Technologi Halbleiterrelais und verfahren zu seiner herstellung

Also Published As

Publication number Publication date
GB2184602A (en) 1987-06-24
GB2185164A (en) 1987-07-08
GB8700583D0 (en) 1987-02-18
IT1183281B (it) 1987-10-22
GB2154820B (en) 1988-05-25
KR900000829B1 (ko) 1990-02-17
IT8519170A0 (it) 1985-01-21
GB8700582D0 (en) 1987-02-18
GB2185164B (en) 1988-05-25
JPH0613648A (ja) 1994-01-21
JPH0645530A (ja) 1994-02-18
GB2184602B (en) 1988-05-25
KR850005737A (ko) 1985-08-28
DE3546524C2 (https=) 1991-05-02
GB2154820A (en) 1985-09-11
IT8519170A1 (it) 1986-07-21
GB8501283D0 (en) 1985-02-20

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