GB8501283D0 - Photovoltaic relay - Google Patents

Photovoltaic relay

Info

Publication number
GB8501283D0
GB8501283D0 GB858501283A GB8501283A GB8501283D0 GB 8501283 D0 GB8501283 D0 GB 8501283D0 GB 858501283 A GB858501283 A GB 858501283A GB 8501283 A GB8501283 A GB 8501283A GB 8501283 D0 GB8501283 D0 GB 8501283D0
Authority
GB
United Kingdom
Prior art keywords
stack
bosfet
wafers
photovoltaic
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB858501283A
Other versions
GB2154820A (en
GB2154820B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/581,784 external-priority patent/US4777387A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB8501283D0 publication Critical patent/GB8501283D0/en
Publication of GB2154820A publication Critical patent/GB2154820A/en
Application granted granted Critical
Publication of GB2154820B publication Critical patent/GB2154820B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A high voltage bidirectional output semiconductor field effect transistor (BOSFET) 24 is disclosed which is turned on from the electrical output of a photovoltaic stack 19 which is energized from an LED 21. The process for manufacture of the device is also disclosed. The BOSFET device consists of two lateral field effect transistors 30, 31 formed in an implanted N( - ) region (71) in a P( - ) substrate (70). A diode 35, PNP transistor 36 and resistor 37 are integrated into the same chip containing the lateral BOSFET device to form a solid state relay circuit having characteristics similar to a reed relay. A photovoltaic isolator 20 consists of a stack of semiconductor wafers (320) which are alloyed together by an aluminum silicon alloy foil (43). Each of the wafers consists of a P-type body having P + and N + diffusions on its opposite surfaces. The wafers are stacked with the same forward conduction polarity. Individual photoisolator stacks (345) are sliced from the completed stack to any desired dimension. Each individual stack is mounted with a light source (360), preferably an LED, which is arranged to illuminate the edge of each wafer within the stack. <IMAGE>
GB08501283A 1984-01-23 1985-01-18 Photovoltaic relay Expired GB2154820B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US57330584A 1984-01-23 1984-01-23
US58178584A 1984-02-21 1984-02-21
US06/581,784 US4777387A (en) 1984-02-21 1984-02-21 Fast turn-off circuit for photovoltaic driven MOSFET

Publications (3)

Publication Number Publication Date
GB8501283D0 true GB8501283D0 (en) 1985-02-20
GB2154820A GB2154820A (en) 1985-09-11
GB2154820B GB2154820B (en) 1988-05-25

Family

ID=27416151

Family Applications (3)

Application Number Title Priority Date Filing Date
GB08501283A Expired GB2154820B (en) 1984-01-23 1985-01-18 Photovoltaic relay
GB08700583A Expired GB2185164B (en) 1984-01-23 1987-01-12 Photovoltaic relay with past switching circuit
GB08700582A Expired GB2184602B (en) 1984-01-23 1987-01-12 Photovoltaic isolator

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB08700583A Expired GB2185164B (en) 1984-01-23 1987-01-12 Photovoltaic relay with past switching circuit
GB08700582A Expired GB2184602B (en) 1984-01-23 1987-01-12 Photovoltaic isolator

Country Status (5)

Country Link
JP (2) JPH0613648A (en)
KR (1) KR900000829B1 (en)
DE (2) DE3502180A1 (en)
GB (3) GB2154820B (en)
IT (1) IT1183281B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224548A (en) * 1985-03-28 1986-10-06 Toshiba Corp Telephone set
FR2590750B1 (en) * 1985-11-22 1991-05-10 Telemecanique Electrique SEMICONDUCTOR POWER SWITCHING DEVICE AND ITS USE FOR REALIZING A STATIC RELAY IN AC
US4754175A (en) * 1985-12-04 1988-06-28 Nec Corporation Solid state relay having a thyristor discharge circuit
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
US4859875A (en) * 1987-08-28 1989-08-22 Siemens Aktiengesellschaft Optocoupler for power FET
JPS6481522A (en) * 1987-09-24 1989-03-27 Agency Ind Science Techn Optical control circuit and semiconductor device constituting said circuit
US4864126A (en) * 1988-06-17 1989-09-05 Hewlett-Packard Company Solid state relay with optically controlled shunt and series enhancement circuit
DE4005835C2 (en) * 1989-02-23 1996-10-10 Agency Ind Science Techn Method for operating a photoelectric converter and photoelectric converter for carrying out the method
DE4206393C2 (en) * 1992-02-29 1995-05-18 Smi Syst Microelect Innovat Solid state relay and method for its manufacture
JP2001053597A (en) * 1999-08-06 2001-02-23 Matsushita Electric Works Ltd Illumination sensor and electronic automatic switch
KR100864918B1 (en) * 2001-12-26 2008-10-22 엘지디스플레이 주식회사 Apparatus for driving data of liquid crystal display
US9214935B2 (en) * 2012-05-17 2015-12-15 Rockwell Automation Technologies, Inc. Output module for industrial control with sink and source capability and low heat dissipation
US10411150B2 (en) * 2016-12-30 2019-09-10 Texas Instruments Incorporated Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422527A (en) * 1965-06-21 1969-01-21 Int Rectifier Corp Method of manufacture of high voltage solar cell
GB1254302A (en) * 1968-03-11 1971-11-17 Associated Semiconductor Mft Improvements in insulated gate field effect transistors
JPS4936515B1 (en) * 1970-06-10 1974-10-01
JPS5116112B2 (en) * 1971-08-04 1976-05-21
JPS5522947B2 (en) * 1973-04-25 1980-06-19
FR2311452A1 (en) * 1975-05-16 1976-12-10 Thomson Csf SEMICONDUCTOR DEVICE FOR QUICK POWER SWITCHING AND DEVICE CONTAINING SUCH A DEVICE
JPS5284982A (en) * 1976-01-06 1977-07-14 Sharp Corp High dielectric strength field effect semiconductor device
JPS5289083A (en) * 1976-01-19 1977-07-26 Matsushita Electric Ind Co Ltd Production of semiconductor photoelectric converting element
GB1602889A (en) * 1978-05-30 1981-11-18 Lidorenko N S Semiconductor photovoltaic generator and a method of manufacturing same
JPS554948A (en) * 1978-06-28 1980-01-14 Hitachi Ltd Mis resistance circuit
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
JPS5615079A (en) * 1979-07-16 1981-02-13 Mitsubishi Electric Corp Insulated gate field effect transistor couple
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
US4296331A (en) * 1979-08-09 1981-10-20 Theta-Corporation Optically coupled electric power relay
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS616711Y2 (en) * 1980-05-12 1986-02-28
US4423341A (en) * 1981-01-02 1983-12-27 Sperry Corporation Fast switching field effect transistor driver circuit
US4419586A (en) * 1981-08-27 1983-12-06 Motorola, Inc. Solid-state relay and regulator
JPS5842269A (en) * 1981-09-05 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Mis-type variable resistor
US4492883A (en) * 1982-06-21 1985-01-08 Eaton Corporation Unpowered fast gate turn-off FET
US4500801A (en) * 1982-06-21 1985-02-19 Eaton Corporation Self-powered nonregenerative fast gate turn-off FET
US4481434A (en) * 1982-06-21 1984-11-06 Eaton Corporation Self regenerative fast gate turn-off FET
US4540893A (en) * 1983-05-31 1985-09-10 General Electric Company Controlled switching of non-regenerative power semiconductors

Also Published As

Publication number Publication date
JPH0645530A (en) 1994-02-18
GB8700582D0 (en) 1987-02-18
GB2184602A (en) 1987-06-24
GB2185164A (en) 1987-07-08
JPH0613648A (en) 1994-01-21
IT8519170A1 (en) 1986-07-21
GB2154820A (en) 1985-09-11
IT1183281B (en) 1987-10-22
KR900000829B1 (en) 1990-02-17
GB2184602B (en) 1988-05-25
DE3502180A1 (en) 1985-08-01
GB2185164B (en) 1988-05-25
KR850005737A (en) 1985-08-28
GB2154820B (en) 1988-05-25
GB8700583D0 (en) 1987-02-18
DE3546524C2 (en) 1991-05-02
IT8519170A0 (en) 1985-01-21

Similar Documents

Publication Publication Date Title
GB2154820B (en) Photovoltaic relay
JPS5252593A (en) Semiconductor light receiving diode
ATE99064T1 (en) INTEGRATED CIRCUIT WITH &#39;&#39;LATCH-UP&#39;&#39; PROTECTION CIRCUIT IN COMPLEMENTARY MOS CIRCUIT TECHNOLOGY.
US5105090A (en) Semiconductor device with a photodetector switching device
SE9300210D0 (en) Semiconductor device in a thin, active layer with high breakthrough voltage
JPS6489365A (en) Semiconductor device
JPS5384578A (en) Semiconductor integrated circuit
US4166224A (en) Photosensitive zero voltage semiconductor switching device
JPS6467972A (en) Power mosfet
JPS648657A (en) Supplementary semiconductor integrated circuit device
JPS5712547A (en) Semiconductor device
JPS5587391A (en) Semiconductor memory circuit device
JPS6467940A (en) Semiconductor integrated circuit
JPS5655078A (en) Semiconductor device
US5223446A (en) Semiconductor device with a photodetector switching device grown on a recrystallized monocrystal silicon film
JPS54146545A (en) Constant current integrated circuit element
JPS56104467A (en) Reverse conducting thyristor
JPS54148388A (en) Semiconductor integrated circuit device
JPH05102602A (en) Semiconductor laser device
JPS55151359A (en) Semiconductor device
JPS5721853A (en) Semiconductor device
EP0281032A3 (en) Semiconductor device comprising a field effect transistor
JPS5561828A (en) Constant voltage circuit device
JPS6428926A (en) Semiconductor device
JPS5715466A (en) Semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19960118