IT8519170A1 - Rele' fotovoltaico - Google Patents

Rele' fotovoltaico

Info

Publication number
IT8519170A1
IT8519170A1 IT1985A19170A IT1917085A IT8519170A1 IT 8519170 A1 IT8519170 A1 IT 8519170A1 IT 1985A19170 A IT1985A19170 A IT 1985A19170A IT 1917085 A IT1917085 A IT 1917085A IT 8519170 A1 IT8519170 A1 IT 8519170A1
Authority
IT
Italy
Prior art keywords
photovoltaic relay
photovoltaic
relay
Prior art date
Application number
IT1985A19170A
Other languages
English (en)
Other versions
IT1183281B (it
IT8519170A0 (it
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/581,784 external-priority patent/US4777387A/en
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of IT8519170A0 publication Critical patent/IT8519170A0/it
Publication of IT8519170A1 publication Critical patent/IT8519170A1/it
Application granted granted Critical
Publication of IT1183281B publication Critical patent/IT1183281B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Light Receiving Elements (AREA)
IT19170/85A 1984-01-23 1985-01-21 Rele' fotovoltaico IT1183281B (it)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US57330584A 1984-01-23 1984-01-23
US58178584A 1984-02-21 1984-02-21
US06/581,784 US4777387A (en) 1984-02-21 1984-02-21 Fast turn-off circuit for photovoltaic driven MOSFET

Publications (3)

Publication Number Publication Date
IT8519170A0 IT8519170A0 (it) 1985-01-21
IT8519170A1 true IT8519170A1 (it) 1986-07-21
IT1183281B IT1183281B (it) 1987-10-22

Family

ID=27416151

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19170/85A IT1183281B (it) 1984-01-23 1985-01-21 Rele' fotovoltaico

Country Status (5)

Country Link
JP (2) JPH0645530A (it)
KR (1) KR900000829B1 (it)
DE (2) DE3502180A1 (it)
GB (3) GB2154820B (it)
IT (1) IT1183281B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224548A (ja) * 1985-03-28 1986-10-06 Toshiba Corp 電話機
FR2590750B1 (fr) * 1985-11-22 1991-05-10 Telemecanique Electrique Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif
US4754175A (en) * 1985-12-04 1988-06-28 Nec Corporation Solid state relay having a thyristor discharge circuit
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
US4859875A (en) * 1987-08-28 1989-08-22 Siemens Aktiengesellschaft Optocoupler for power FET
JPS6481522A (en) * 1987-09-24 1989-03-27 Agency Ind Science Techn Optical control circuit and semiconductor device constituting said circuit
US4864126A (en) * 1988-06-17 1989-09-05 Hewlett-Packard Company Solid state relay with optically controlled shunt and series enhancement circuit
DE4005835C2 (de) * 1989-02-23 1996-10-10 Agency Ind Science Techn Verfahren zum Betrieb eines photoelektrischen Wandlers und photoelektrischen Wandler zur Durchführung des Verfahrens
DE4206393C2 (de) * 1992-02-29 1995-05-18 Smi Syst Microelect Innovat Halbleiterrelais und Verfahren zu seiner Herstellung
JP2001053597A (ja) * 1999-08-06 2001-02-23 Matsushita Electric Works Ltd 照度センサおよび電子式自動点滅器
KR100864918B1 (ko) 2001-12-26 2008-10-22 엘지디스플레이 주식회사 액정표시장치의 데이터 구동 장치
RU2369007C2 (ru) * 2007-06-27 2009-09-27 Ставропольский военный институт связи ракетных войск Устройство согласования на основе оптоэлектронного ключа
US9214935B2 (en) * 2012-05-17 2015-12-15 Rockwell Automation Technologies, Inc. Output module for industrial control with sink and source capability and low heat dissipation
US10411150B2 (en) * 2016-12-30 2019-09-10 Texas Instruments Incorporated Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422527A (en) * 1965-06-21 1969-01-21 Int Rectifier Corp Method of manufacture of high voltage solar cell
GB1254302A (en) * 1968-03-11 1971-11-17 Associated Semiconductor Mft Improvements in insulated gate field effect transistors
JPS4936515B1 (it) * 1970-06-10 1974-10-01
JPS5116112B2 (it) * 1971-08-04 1976-05-21
JPS5522947B2 (it) * 1973-04-25 1980-06-19
FR2311452A1 (fr) * 1975-05-16 1976-12-10 Thomson Csf Dispositif a semi-conducteur pour commutation rapide de puissance et appareil comportant un tel dispositif
JPS5284982A (en) * 1976-01-06 1977-07-14 Sharp Corp High dielectric strength field effect semiconductor device
JPS5289083A (en) * 1976-01-19 1977-07-26 Matsushita Electric Ind Co Ltd Production of semiconductor photoelectric converting element
GB1602889A (en) * 1978-05-30 1981-11-18 Lidorenko N S Semiconductor photovoltaic generator and a method of manufacturing same
JPS554948A (en) * 1978-06-28 1980-01-14 Hitachi Ltd Mis resistance circuit
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
JPS5615079A (en) * 1979-07-16 1981-02-13 Mitsubishi Electric Corp Insulated gate field effect transistor couple
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
US4296331A (en) * 1979-08-09 1981-10-20 Theta-Corporation Optically coupled electric power relay
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS616711Y2 (it) * 1980-05-12 1986-02-28
US4423341A (en) * 1981-01-02 1983-12-27 Sperry Corporation Fast switching field effect transistor driver circuit
US4419586A (en) * 1981-08-27 1983-12-06 Motorola, Inc. Solid-state relay and regulator
JPS5842269A (ja) * 1981-09-05 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型可変抵抗器
US4481434A (en) * 1982-06-21 1984-11-06 Eaton Corporation Self regenerative fast gate turn-off FET
US4492883A (en) * 1982-06-21 1985-01-08 Eaton Corporation Unpowered fast gate turn-off FET
US4500801A (en) * 1982-06-21 1985-02-19 Eaton Corporation Self-powered nonregenerative fast gate turn-off FET
US4540893A (en) * 1983-05-31 1985-09-10 General Electric Company Controlled switching of non-regenerative power semiconductors

Also Published As

Publication number Publication date
IT1183281B (it) 1987-10-22
DE3546524C2 (it) 1991-05-02
GB2184602B (en) 1988-05-25
GB2154820A (en) 1985-09-11
DE3502180A1 (de) 1985-08-01
JPH0645530A (ja) 1994-02-18
GB2185164B (en) 1988-05-25
IT8519170A0 (it) 1985-01-21
GB2154820B (en) 1988-05-25
GB8501283D0 (en) 1985-02-20
KR900000829B1 (ko) 1990-02-17
GB8700582D0 (en) 1987-02-18
GB8700583D0 (en) 1987-02-18
JPH0613648A (ja) 1994-01-21
KR850005737A (ko) 1985-08-28
GB2184602A (en) 1987-06-24
GB2185164A (en) 1987-07-08

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940129