DE3546524C2 - - Google Patents

Info

Publication number
DE3546524C2
DE3546524C2 DE3546524A DE3546524A DE3546524C2 DE 3546524 C2 DE3546524 C2 DE 3546524C2 DE 3546524 A DE3546524 A DE 3546524A DE 3546524 A DE3546524 A DE 3546524A DE 3546524 C2 DE3546524 C2 DE 3546524C2
Authority
DE
Germany
Prior art keywords
transistor
effect transistor
gate
field effect
voltage source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3546524A
Other languages
German (de)
English (en)
Inventor
Daniel M. Riverside Calif. Us Kinzer
Howard William Santa Ana Calif. Us Collins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/581,784 external-priority patent/US4777387A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Application granted granted Critical
Publication of DE3546524C2 publication Critical patent/DE3546524C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Light Receiving Elements (AREA)
DE3546524A 1984-01-23 1985-01-23 Expired - Lifetime DE3546524C2 (it)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US57330584A 1984-01-23 1984-01-23
US58178584A 1984-02-21 1984-02-21
US06/581,784 US4777387A (en) 1984-02-21 1984-02-21 Fast turn-off circuit for photovoltaic driven MOSFET

Publications (1)

Publication Number Publication Date
DE3546524C2 true DE3546524C2 (it) 1991-05-02

Family

ID=27416151

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19853502180 Ceased DE3502180A1 (de) 1984-01-23 1985-01-23 Festkoerperrelais
DE3546524A Expired - Lifetime DE3546524C2 (it) 1984-01-23 1985-01-23

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19853502180 Ceased DE3502180A1 (de) 1984-01-23 1985-01-23 Festkoerperrelais

Country Status (5)

Country Link
JP (2) JPH0645530A (it)
KR (1) KR900000829B1 (it)
DE (2) DE3502180A1 (it)
GB (3) GB2154820B (it)
IT (1) IT1183281B (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224548A (ja) * 1985-03-28 1986-10-06 Toshiba Corp 電話機
FR2590750B1 (fr) * 1985-11-22 1991-05-10 Telemecanique Electrique Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif
CA1285033C (en) * 1985-12-04 1991-06-18 Shigeki Kobayashi Solid state relay having a thyristor discharge circuit
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
US4859875A (en) * 1987-08-28 1989-08-22 Siemens Aktiengesellschaft Optocoupler for power FET
JPS6481522A (en) * 1987-09-24 1989-03-27 Agency Ind Science Techn Optical control circuit and semiconductor device constituting said circuit
US4864126A (en) * 1988-06-17 1989-09-05 Hewlett-Packard Company Solid state relay with optically controlled shunt and series enhancement circuit
DE4005835C2 (de) * 1989-02-23 1996-10-10 Agency Ind Science Techn Verfahren zum Betrieb eines photoelektrischen Wandlers und photoelektrischen Wandler zur Durchführung des Verfahrens
DE4206393C2 (de) * 1992-02-29 1995-05-18 Smi Syst Microelect Innovat Halbleiterrelais und Verfahren zu seiner Herstellung
JP2001053597A (ja) * 1999-08-06 2001-02-23 Matsushita Electric Works Ltd 照度センサおよび電子式自動点滅器
KR100864918B1 (ko) 2001-12-26 2008-10-22 엘지디스플레이 주식회사 액정표시장치의 데이터 구동 장치
US9214935B2 (en) * 2012-05-17 2015-12-15 Rockwell Automation Technologies, Inc. Output module for industrial control with sink and source capability and low heat dissipation
US10411150B2 (en) * 2016-12-30 2019-09-10 Texas Instruments Incorporated Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422527A (en) * 1965-06-21 1969-01-21 Int Rectifier Corp Method of manufacture of high voltage solar cell
GB1254302A (en) * 1968-03-11 1971-11-17 Associated Semiconductor Mft Improvements in insulated gate field effect transistors
JPS4936515B1 (it) * 1970-06-10 1974-10-01
JPS5116112B2 (it) * 1971-08-04 1976-05-21
JPS5522947B2 (it) * 1973-04-25 1980-06-19
FR2311452A1 (fr) * 1975-05-16 1976-12-10 Thomson Csf Dispositif a semi-conducteur pour commutation rapide de puissance et appareil comportant un tel dispositif
JPS5284982A (en) * 1976-01-06 1977-07-14 Sharp Corp High dielectric strength field effect semiconductor device
JPS5289083A (en) * 1976-01-19 1977-07-26 Matsushita Electric Ind Co Ltd Production of semiconductor photoelectric converting element
GB1602889A (en) * 1978-05-30 1981-11-18 Lidorenko N S Semiconductor photovoltaic generator and a method of manufacturing same
JPS554948A (en) * 1978-06-28 1980-01-14 Hitachi Ltd Mis resistance circuit
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
JPS5615079A (en) * 1979-07-16 1981-02-13 Mitsubishi Electric Corp Insulated gate field effect transistor couple
US4296331A (en) * 1979-08-09 1981-10-20 Theta-Corporation Optically coupled electric power relay
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS616711Y2 (it) * 1980-05-12 1986-02-28
US4423341A (en) * 1981-01-02 1983-12-27 Sperry Corporation Fast switching field effect transistor driver circuit
US4419586A (en) * 1981-08-27 1983-12-06 Motorola, Inc. Solid-state relay and regulator
JPS5842269A (ja) * 1981-09-05 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型可変抵抗器
US4500801A (en) * 1982-06-21 1985-02-19 Eaton Corporation Self-powered nonregenerative fast gate turn-off FET
US4481434A (en) * 1982-06-21 1984-11-06 Eaton Corporation Self regenerative fast gate turn-off FET
US4492883A (en) * 1982-06-21 1985-01-08 Eaton Corporation Unpowered fast gate turn-off FET
US4540893A (en) * 1983-05-31 1985-09-10 General Electric Company Controlled switching of non-regenerative power semiconductors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HERFURTH, Michael: Ansteuerschaltungen für SIPMOS-Transistoren im Schaltbetrieb. In: Siemens Components 18 (1980) Hd.5, S.218-224 *
RODRIGUEZ, JosE, SACK, Lothar: Schnelle Ansteuer- und Schutzschaltung für Feld- effekt-Leistungstransistoren. In: Elektro- nik 18/9.9.1983, S.125-127 *

Also Published As

Publication number Publication date
IT1183281B (it) 1987-10-22
JPH0613648A (ja) 1994-01-21
GB8700582D0 (en) 1987-02-18
GB2185164B (en) 1988-05-25
JPH0645530A (ja) 1994-02-18
GB2184602B (en) 1988-05-25
GB2184602A (en) 1987-06-24
GB2185164A (en) 1987-07-08
DE3502180A1 (de) 1985-08-01
KR900000829B1 (ko) 1990-02-17
GB8700583D0 (en) 1987-02-18
GB8501283D0 (en) 1985-02-20
KR850005737A (ko) 1985-08-28
IT8519170A0 (it) 1985-01-21
GB2154820A (en) 1985-09-11
IT8519170A1 (it) 1986-07-21
GB2154820B (en) 1988-05-25

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