DE3177289T2 - Mos-transistorschaltung mit durchschlagschutz. - Google Patents

Mos-transistorschaltung mit durchschlagschutz.

Info

Publication number
DE3177289T2
DE3177289T2 DE8585102555T DE3177289T DE3177289T2 DE 3177289 T2 DE3177289 T2 DE 3177289T2 DE 8585102555 T DE8585102555 T DE 8585102555T DE 3177289 T DE3177289 T DE 3177289T DE 3177289 T2 DE3177289 T2 DE 3177289T2
Authority
DE
Germany
Prior art keywords
mos transistor
transistor circuit
punch protection
punch
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585102555T
Other languages
English (en)
Other versions
DE3177289D1 (de
Inventor
Masamichi Asano
Hiroshi Iwahashi
Ichiro Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3177289D1 publication Critical patent/DE3177289D1/de
Application granted granted Critical
Publication of DE3177289T2 publication Critical patent/DE3177289T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
DE8585102555T 1980-06-18 1981-06-17 Mos-transistorschaltung mit durchschlagschutz. Expired - Fee Related DE3177289T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8242080A JPS577969A (en) 1980-06-18 1980-06-18 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
DE3177289D1 DE3177289D1 (de) 1992-10-08
DE3177289T2 true DE3177289T2 (de) 1993-01-07

Family

ID=13774089

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8585102555T Expired - Fee Related DE3177289T2 (de) 1980-06-18 1981-06-17 Mos-transistorschaltung mit durchschlagschutz.
DE8181302720T Expired DE3175407D1 (en) 1980-06-18 1981-06-17 Mos transistor circuit with breakdown protection

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8181302720T Expired DE3175407D1 (en) 1980-06-18 1981-06-17 Mos transistor circuit with breakdown protection

Country Status (5)

Country Link
US (1) US4385337A (de)
EP (4) EP0042305B1 (de)
JP (1) JPS577969A (de)
CA (1) CA1169922A (de)
DE (2) DE3177289T2 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5714216A (en) * 1980-06-30 1982-01-25 Mitsubishi Electric Corp Input protecting circuit
JPS5869124A (ja) * 1981-10-20 1983-04-25 Toshiba Corp 半導体集積回路
US4786956A (en) * 1982-10-20 1988-11-22 North American Philips Corporation, Signetics Division Input protection device for integrated circuits
JPH061833B2 (ja) * 1982-11-11 1994-01-05 株式会社東芝 Ｍｏｓ形半導体装置
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
JPH0691196B2 (ja) * 1984-07-25 1994-11-14 株式会社日立製作所 半導体装置
JPS6150358A (ja) * 1984-08-20 1986-03-12 Toshiba Corp 半導体集積回路
JPS61218143A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
JPS6271275A (ja) * 1985-09-25 1987-04-01 Toshiba Corp 半導体集積回路
US4733058A (en) * 1986-02-28 1988-03-22 Colt Industries Inc. Fail transistor detection and display system for electrical discharge machining apparatus
JPH0695545B2 (ja) * 1988-01-07 1994-11-24 株式会社東芝 半導体集積回路
JPH0289357A (ja) * 1988-09-27 1990-03-29 Nec Corp 半導体回路
CA1314946C (en) * 1989-02-01 1993-03-23 Colin Harris Protection of analog reference and bias voltage inputs
US5243490A (en) * 1989-06-28 1993-09-07 Texas Instruments Incorporated ESD protected FAMOS transistor
US5124877A (en) * 1989-07-18 1992-06-23 Gazelle Microcircuits, Inc. Structure for providing electrostatic discharge protection
FR2652449A1 (fr) * 1989-09-22 1991-03-29 Sgs Thomson Microelectronics Dispositif de protection electrostatique pour broche de circuit integre.
JP2626229B2 (ja) * 1989-10-12 1997-07-02 日本電気株式会社 半導体入力保護装置
GB2238683A (en) * 1989-11-29 1991-06-05 Philips Electronic Associated A thin film transistor circuit
US5324915A (en) * 1990-01-18 1994-06-28 Honeywell Inc. Microcontroller controlled input protection
US5086365A (en) * 1990-05-08 1992-02-04 Integrated Device Technology, Inc. Electostatic discharge protection circuit
US5214562A (en) * 1991-06-14 1993-05-25 The United States Of America As Represented By The Secretary Of The Air Force Electrostatic discharge protective circuit of shunting transistors
US5223745A (en) * 1991-12-06 1993-06-29 National Semiconductor Corporation Power down miller killer circuit
KR950002015B1 (ko) * 1991-12-23 1995-03-08 삼성전자주식회사 하나의 오실레이터에 의해 동작되는 정전원 발생회로
US5311391A (en) * 1993-05-04 1994-05-10 Hewlett-Packard Company Electrostatic discharge protection circuit with dynamic triggering
JP3135433B2 (ja) * 1993-09-17 2001-02-13 株式会社東芝 半導体保護回路及びその装置
JP2965840B2 (ja) * 1993-12-02 1999-10-18 株式会社東芝 トランジスタ回路
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
DE19540555A1 (de) * 1995-10-31 1997-05-07 Basf Ag Verwendung von Poly(meth)acrylsäuren als Verzweiger
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5808343A (en) * 1996-09-20 1998-09-15 Integrated Device Technology, Inc. Input structure for digital integrated circuits
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
WO2001003301A1 (en) 1999-06-29 2001-01-11 Cochlear Limited High voltage protection circuit on standard cmos process
US6498385B1 (en) * 1999-09-01 2002-12-24 International Business Machines Corporation Post-fuse blow corrosion prevention structure for copper fuses
US6587321B2 (en) 2000-07-13 2003-07-01 Broadcom Corporation Methods and systems for improving ESD clamp response time
US6351160B1 (en) 2000-12-06 2002-02-26 International Business Machines Corporation Method and apparatus for enhancing reliability of a high voltage input/output driver/receiver
TW483143B (en) * 2001-02-05 2002-04-11 Vanguard Int Semiconduct Corp Voltage control device for electrostatic discharge protection and its related circuit
US7439592B2 (en) * 2004-12-13 2008-10-21 Broadcom Corporation ESD protection for high voltage applications
JP4507091B2 (ja) * 2004-12-13 2010-07-21 エルピーダメモリ株式会社 半導体装置の製造方法及び半導体装置
US7505238B2 (en) * 2005-01-07 2009-03-17 Agnes Neves Woo ESD configuration for low parasitic capacitance I/O
US7301741B2 (en) * 2005-05-17 2007-11-27 Freescale Semiconductor, Inc. Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit
US7593202B2 (en) * 2005-11-01 2009-09-22 Freescale Semiconductor, Inc. Electrostatic discharge (ESD) protection circuit for multiple power domain integrated circuit
US7589945B2 (en) * 2006-08-31 2009-09-15 Freescale Semiconductor, Inc. Distributed electrostatic discharge protection circuit with varying clamp size
US7777998B2 (en) 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US7817387B2 (en) * 2008-01-09 2010-10-19 Freescale Semiconductor, Inc. MIGFET circuit with ESD protection
JP6213719B2 (ja) * 2013-08-08 2017-10-18 セイコーエプソン株式会社 入力保護回路、電子デバイス、リアルタイムクロックモジュール、電子機器及び移動体
US11552190B2 (en) 2019-12-12 2023-01-10 Analog Devices International Unlimited Company High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636385A (en) * 1970-02-13 1972-01-18 Ncr Co Protection circuit
US3746946A (en) * 1972-10-02 1973-07-17 Motorola Inc Insulated gate field-effect transistor input protection circuit
US3819952A (en) * 1973-01-29 1974-06-25 Mitsubishi Electric Corp Semiconductor device
JPS5435756B2 (de) * 1974-02-04 1979-11-05
US3909674A (en) * 1974-03-28 1975-09-30 Rockwell International Corp Protection circuit for MOS driver
DE2531846C2 (de) * 1974-07-16 1989-12-14 Nippon Electric Co., Ltd., Tokyo Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor
JPS5530312B2 (de) * 1975-01-16 1980-08-09
JPS5289477A (en) * 1976-01-22 1977-07-27 Toshiba Corp Input protecting circuit
US4115710A (en) * 1976-12-27 1978-09-19 Texas Instruments Incorporated Substrate bias for MOS integrated circuit
JPS54127684A (en) * 1978-03-27 1979-10-03 Nec Corp Semiconductor device
JPS54146975A (en) * 1978-05-10 1979-11-16 Nec Corp Protection circuit of semiconductor device
JPS5570071A (en) * 1978-11-21 1980-05-27 Mitsubishi Electric Corp Mosic protective circuit

Also Published As

Publication number Publication date
EP0172305A1 (de) 1986-02-26
EP0168552A3 (en) 1986-02-26
JPS577969A (en) 1982-01-16
CA1169922A (en) 1984-06-26
EP0042305A3 (en) 1982-09-15
DE3177289D1 (de) 1992-10-08
EP0042305A2 (de) 1981-12-23
EP0171495B1 (de) 1989-09-06
DE3175407D1 (en) 1986-11-06
EP0042305B1 (de) 1986-10-01
EP0172305B1 (de) 1992-08-19
EP0168552A2 (de) 1986-01-22
EP0168552B1 (de) 1992-09-02
US4385337A (en) 1983-05-24
EP0171495A1 (de) 1986-02-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee