DE3311923C2 - - Google Patents
Info
- Publication number
- DE3311923C2 DE3311923C2 DE3311923A DE3311923A DE3311923C2 DE 3311923 C2 DE3311923 C2 DE 3311923C2 DE 3311923 A DE3311923 A DE 3311923A DE 3311923 A DE3311923 A DE 3311923A DE 3311923 C2 DE3311923 C2 DE 3311923C2
- Authority
- DE
- Germany
- Prior art keywords
- drain
- thin film
- film transistor
- dft
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0823—Several active elements per pixel in active matrix panels used to establish symmetry in driving, e.g. with polarity inversion
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0209—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display
- G09G2320/0214—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display with crosstalk due to leakage current of pixel switch in active matrix panels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A40/00—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
- Y02A40/80—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in fisheries management
- Y02A40/81—Aquaculture, e.g. of fish
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57054336A JPS58171860A (ja) | 1982-04-01 | 1982-04-01 | 薄膜トランジスタ |
JP57063157A JPS58180063A (ja) | 1982-04-15 | 1982-04-15 | 薄膜トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3311923A1 DE3311923A1 (de) | 1983-10-13 |
DE3311923C2 true DE3311923C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-10-08 |
Family
ID=26395087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19833311923 Granted DE3311923A1 (de) | 1982-04-01 | 1983-03-31 | Duennfilmtransistoranordnung |
Country Status (4)
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
US6294796B1 (en) * | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
JPS61256389A (ja) * | 1985-05-10 | 1986-11-13 | 松下電器産業株式会社 | 液晶表示装置の駆動回路 |
US4960719A (en) * | 1988-02-04 | 1990-10-02 | Seikosha Co., Ltd. | Method for producing amorphous silicon thin film transistor array substrate |
JPH01217421A (ja) * | 1988-02-26 | 1989-08-31 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法 |
JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
US5264720A (en) * | 1989-09-22 | 1993-11-23 | Nippondenso Co., Ltd. | High withstanding voltage transistor |
US5095348A (en) * | 1989-10-02 | 1992-03-10 | Texas Instruments Incorporated | Semiconductor on insulator transistor |
US5073723A (en) * | 1990-08-10 | 1991-12-17 | Xerox Corporation | Space charge current limited shunt in a cascode circuit for hvtft devices |
JP3556679B2 (ja) * | 1992-05-29 | 2004-08-18 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
JP2873632B2 (ja) * | 1991-03-15 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US5589847A (en) * | 1991-09-23 | 1996-12-31 | Xerox Corporation | Switched capacitor analog circuits using polysilicon thin film technology |
EP0589478B1 (en) * | 1992-09-25 | 1999-11-17 | Sony Corporation | Liquid crystal display device |
DE4307177C2 (de) * | 1993-03-08 | 1996-02-08 | Lueder Ernst | Schaltungsanordnung als Teil eines Schieberegisters zur Ansteuerung von ketten- oder matrixförmig angeordneten Schaltelementen |
CN1161646C (zh) | 1994-06-02 | 2004-08-11 | 株式会社半导体能源研究所 | 有源矩阵显示器和电光元件 |
JP3471928B2 (ja) * | 1994-10-07 | 2003-12-02 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置の駆動方法 |
US5608557A (en) * | 1995-01-03 | 1997-03-04 | Xerox Corporation | Circuitry with gate line crossing semiconductor line at two or more channels |
US5703382A (en) * | 1995-11-20 | 1997-12-30 | Xerox Corporation | Array having multiple channel structures with continuously doped interchannel regions |
TW345654B (en) | 1995-02-15 | 1998-11-21 | Handotai Energy Kenkyusho Kk | Active matrix display device |
GB9520888D0 (en) * | 1995-10-12 | 1995-12-13 | Philips Electronics Nv | Electronic devices comprising thin-film circuitry |
US5808317A (en) * | 1996-07-24 | 1998-09-15 | International Business Machines Corporation | Split-gate, horizontally redundant, and self-aligned thin film transistors |
EP0863495B1 (en) * | 1996-09-26 | 2005-08-24 | Seiko Epson Corporation | Display device |
JP3784491B2 (ja) * | 1997-03-28 | 2006-06-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
JP4181710B2 (ja) * | 1998-10-21 | 2008-11-19 | エルジー ディスプレイ カンパニー リミテッド | シフトレジスタ |
KR100438525B1 (ko) | 1999-02-09 | 2004-07-03 | 엘지.필립스 엘시디 주식회사 | 쉬프트 레지스터 회로 |
WO2004070696A1 (ja) * | 2003-01-22 | 2004-08-19 | Toshiba Matsushita Display Technology Co., Ltd. | 有機elディスプレイ及びアクティブマトリクス基板 |
CN100440288C (zh) * | 2003-01-22 | 2008-12-03 | 东芝松下显示技术有限公司 | 有机el显示器和有源矩阵基板 |
KR100714003B1 (ko) * | 2005-08-22 | 2007-05-04 | 삼성에스디아이 주식회사 | 쉬프트 레지스터 회로 |
JP4912023B2 (ja) * | 2006-04-25 | 2012-04-04 | 三菱電機株式会社 | シフトレジスタ回路 |
ES2655257T3 (es) * | 2006-12-01 | 2018-02-19 | Ses-Imagotag | Pantalla de matriz activa de baja potencia |
JP5090008B2 (ja) * | 2007-02-07 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびシフトレジスタ回路 |
WO2010058581A1 (ja) * | 2008-11-20 | 2010-05-27 | シャープ株式会社 | シフトレジスタ |
KR101510904B1 (ko) * | 2008-12-22 | 2015-04-20 | 엘지디스플레이 주식회사 | 액정표시장치 |
US20120082287A1 (en) * | 2009-05-20 | 2012-04-05 | Sharp Kabushiki Kaisha | Shift register |
KR101389120B1 (ko) * | 2010-03-02 | 2014-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
DE112011106202B4 (de) | 2010-03-02 | 2023-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Impulssignal-Ausgangsschaltung und Schieberegister |
GB2481008A (en) * | 2010-06-07 | 2011-12-14 | Sharp Kk | Active storage pixel memory |
CN102610206B (zh) * | 2012-03-30 | 2013-09-18 | 深圳市华星光电技术有限公司 | 显示器的闸极驱动电路 |
CN103293798B (zh) | 2012-07-13 | 2017-08-25 | 上海天马微电子有限公司 | 阵列基板、液晶显示器及其控制方法 |
US20140354655A1 (en) * | 2013-06-04 | 2014-12-04 | Qualcomm Mems Technologies, Inc. | Reducing floating node leakage current with a feedback transistor |
WO2014208123A1 (ja) * | 2013-06-28 | 2014-12-31 | シャープ株式会社 | 単位シフトレジスタ回路、シフトレジスタ回路、単位シフトレジスタ回路の制御方法及び表示装置 |
CN104424880A (zh) * | 2013-08-21 | 2015-03-18 | 昆山工研院新型平板显示技术中心有限公司 | 有机发光显示装置、显示器及减少漏电流的方法 |
CN103996367B (zh) * | 2014-04-18 | 2017-01-25 | 京东方科技集团股份有限公司 | 移位寄存器、栅极驱动电路和显示装置 |
CN104050910B (zh) * | 2014-06-16 | 2016-08-31 | 京东方科技集团股份有限公司 | 移位寄存器单元、栅极驱动电路及显示面板 |
KR20160092584A (ko) * | 2015-01-27 | 2016-08-05 | 삼성디스플레이 주식회사 | 게이트 구동회로 |
KR102302275B1 (ko) | 2015-02-28 | 2021-09-15 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN107657983B (zh) * | 2017-11-09 | 2024-03-26 | 京东方科技集团股份有限公司 | 移位寄存器单元、驱动方法、栅极驱动电路及显示装置 |
CN108597454B (zh) * | 2018-05-09 | 2020-09-15 | 上海天马有机发光显示技术有限公司 | 一种移位寄存器及其驱动方法、扫描驱动电路和显示装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3378783A (en) * | 1965-12-13 | 1968-04-16 | Rca Corp | Optimized digital amplifier utilizing insulated-gate field-effect transistors |
JPS5244180B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-11-05 | 1977-11-05 | ||
US3969753A (en) | 1972-06-30 | 1976-07-13 | Rockwell International Corporation | Silicon on sapphire oriented for maximum mobility |
US3958266A (en) * | 1974-04-19 | 1976-05-18 | Rca Corporation | Deep depletion insulated gate field effect transistors |
US4040073A (en) * | 1975-08-29 | 1977-08-02 | Westinghouse Electric Corporation | Thin film transistor and display panel using the transistor |
DE2706623A1 (de) * | 1977-02-16 | 1978-08-17 | Siemens Ag | Mis-fet fuer hohe source-drain-spannungen |
SE7907193L (sv) * | 1978-09-28 | 1980-03-29 | Rca Corp | Bestendigt minne |
US4455566A (en) | 1979-06-18 | 1984-06-19 | Fujitsu Limited | Highly integrated semiconductor memory device |
JPS5617083A (en) | 1979-07-20 | 1981-02-18 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS5692573A (en) * | 1979-12-26 | 1981-07-27 | Citizen Watch Co Ltd | Display panel |
US4278988A (en) * | 1980-02-04 | 1981-07-14 | Burroughs Corporation | Semiconductor device for providing a selectable reference voltage |
DE3015936A1 (de) * | 1980-04-25 | 1981-10-29 | Albrecht G. Prof. Dr. 4600 Dortmund Fischer | Herstellungsverfahren fuer duennfilmtransistor-grossmatrizen fuer flache bildschirme |
US4533934A (en) | 1980-10-02 | 1985-08-06 | Westinghouse Electric Corp. | Device structures for high density integrated circuits |
JPS5812365A (ja) * | 1981-07-15 | 1983-01-24 | Japan Electronic Ind Dev Assoc<Jeida> | 薄膜トランジスタ及びその製造方法 |
-
1983
- 1983-03-25 FR FR8304924A patent/FR2524714B1/fr not_active Expired
- 1983-03-29 GB GB08308614A patent/GB2117970B/en not_active Expired
- 1983-03-31 DE DE19833311923 patent/DE3311923A1/de active Granted
- 1983-03-31 US US06/481,087 patent/US4623908A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4623908A (en) | 1986-11-18 |
GB2117970A (en) | 1983-10-19 |
FR2524714A1 (fr) | 1983-10-07 |
GB8308614D0 (en) | 1983-05-05 |
DE3311923A1 (de) | 1983-10-13 |
GB2117970B (en) | 1985-11-20 |
FR2524714B1 (fr) | 1986-05-02 |
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