DE2740700C3 - - Google Patents

Info

Publication number
DE2740700C3
DE2740700C3 DE19772740700 DE2740700A DE2740700C3 DE 2740700 C3 DE2740700 C3 DE 2740700C3 DE 19772740700 DE19772740700 DE 19772740700 DE 2740700 A DE2740700 A DE 2740700A DE 2740700 C3 DE2740700 C3 DE 2740700C3
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19772740700
Other versions
DE2740700A1 (de
DE2740700B2 (de
Inventor
Kiyoo Higashikurume Itoh (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP10779276A priority Critical patent/JPS5627957B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2740700A1 publication Critical patent/DE2740700A1/de
Publication of DE2740700B2 publication Critical patent/DE2740700B2/de
Application granted granted Critical
Publication of DE2740700C3 publication Critical patent/DE2740700C3/de
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
DE19772740700 1976-09-10 1977-09-09 Expired DE2740700C3 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10779276A JPS5627957B2 (de) 1976-09-10 1976-09-10

Publications (3)

Publication Number Publication Date
DE2740700A1 DE2740700A1 (de) 1978-03-23
DE2740700B2 DE2740700B2 (de) 1979-05-17
DE2740700C3 true DE2740700C3 (de) 1980-01-31

Family

ID=14468134

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772740700 Expired DE2740700C3 (de) 1976-09-10 1977-09-09

Country Status (4)

Country Link
US (1) US4112508A (de)
JP (1) JPS5627957B2 (de)
DE (1) DE2740700C3 (de)
NL (1) NL178369C (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041463B2 (de) * 1976-11-19 1985-09-17 Hitachi Ltd
JPS5744994B2 (de) * 1977-02-10 1982-09-25
DE2935121C2 (de) * 1978-09-07 1989-10-05 Texas Instruments Inc., Dallas, Tex., Us
JPS5575899U (de) * 1978-11-20 1980-05-24
JPS5847796B2 (de) * 1979-05-26 1983-10-25 Fujitsu Ltd
JPS6233674B2 (de) * 1979-09-19 1987-07-22 Hitachi Ltd
US4339766A (en) * 1979-10-11 1982-07-13 Texas Instruments Incorporated Dummy columns for reducing pattern sensitivity in MOS/LSI dynamic RAM
JPS6216039Y2 (de) * 1980-11-11 1987-04-23
EP0061289B1 (de) * 1981-03-17 1988-07-27 Hitachi, Ltd. Monolithischer Halbleiterspeicher vom dynamischen Typ
JPS57208691A (en) * 1981-06-15 1982-12-21 Mitsubishi Electric Corp Semiconductor memory
JPS5862893A (en) * 1981-10-09 1983-04-14 Mitsubishi Electric Corp Metal-oxide-semiconductor dynamic memory
JPH0221396B2 (de) * 1982-02-04 1990-05-14 Mitsubishi Electric Corp
JPS58140297A (en) * 1982-02-15 1983-08-19 Mitsubishi Electric Corp Heat-sensitive duplicate sheet
JPS59178294A (en) * 1983-03-29 1984-10-09 Matsushita Electric Ind Co Ltd Transfer material for thermal recording
JPS6040294A (en) * 1983-08-12 1985-03-02 Hitachi Chem Co Ltd Thermal transfer film
JPH041715B2 (de) * 1983-12-23 1992-01-14 Konishiroku Photo Ind
JPS61228993A (en) * 1985-04-03 1986-10-13 Fuji Kagakushi Kogyo Co Ltd Thermal fusion transfer recording medium
JPH0664907B2 (ja) * 1985-06-26 1994-08-22 株式会社日立製作所 ダイナミツク型ram
JP2523925B2 (ja) * 1990-03-29 1996-08-14 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
JPH03288399A (en) * 1990-04-04 1991-12-18 Mitsubishi Electric Corp Semiconductor storage device
JP2718577B2 (ja) * 1991-03-15 1998-02-25 松下電器産業株式会社 ダイナミックram
JP4737351B2 (ja) * 2000-08-07 2011-07-27 東洋製罐株式会社 容器口部及びキャップ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5327107B2 (de) * 1973-09-28 1978-08-05

Also Published As

Publication number Publication date
JPS5627957B2 (de) 1981-06-27
DE2740700A1 (de) 1978-03-23
NL7709931A (nl) 1978-03-14
NL178369C (en) 1986-03-03
US4112508A (en) 1978-09-05
DE2740700B2 (de) 1979-05-17
JPS5333542A (en) 1978-03-29

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)