DE2619713C2 - Halbleiterspeicher - Google Patents
HalbleiterspeicherInfo
- Publication number
- DE2619713C2 DE2619713C2 DE2619713A DE2619713A DE2619713C2 DE 2619713 C2 DE2619713 C2 DE 2619713C2 DE 2619713 A DE2619713 A DE 2619713A DE 2619713 A DE2619713 A DE 2619713A DE 2619713 C2 DE2619713 C2 DE 2619713C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- bul
- zone
- conductor track
- bll
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 31
- 239000003990 capacitor Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 10
- 101150068246 V-MOS gene Proteins 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000007547 defect Effects 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 210000000352 storage cell Anatomy 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H10D84/813—Combinations of field-effect devices and capacitor only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2619713A DE2619713C2 (de) | 1976-05-04 | 1976-05-04 | Halbleiterspeicher |
| GB5813/77A GB1530094A (en) | 1976-05-04 | 1977-02-11 | Semiconductor stores |
| US05/789,953 US4109270A (en) | 1976-05-04 | 1977-04-22 | Semiconductor store |
| IT23107/77A IT1085458B (it) | 1976-05-04 | 1977-05-03 | Memoria a semiconduttori |
| FR7713322A FR2350666A1 (fr) | 1976-05-04 | 1977-05-03 | Memoire a semi-conducteurs |
| NL7704864A NL7704864A (nl) | 1976-05-04 | 1977-05-03 | Halfgeleidergeheugen. |
| JP52051692A JPS6018149B2 (ja) | 1976-05-04 | 1977-05-04 | 半導体記憶器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2619713A DE2619713C2 (de) | 1976-05-04 | 1976-05-04 | Halbleiterspeicher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2619713A1 DE2619713A1 (de) | 1977-11-24 |
| DE2619713C2 true DE2619713C2 (de) | 1984-12-20 |
Family
ID=5977056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2619713A Expired DE2619713C2 (de) | 1976-05-04 | 1976-05-04 | Halbleiterspeicher |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4109270A (enExample) |
| JP (1) | JPS6018149B2 (enExample) |
| DE (1) | DE2619713C2 (enExample) |
| FR (1) | FR2350666A1 (enExample) |
| GB (1) | GB1530094A (enExample) |
| IT (1) | IT1085458B (enExample) |
| NL (1) | NL7704864A (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2737073C3 (de) * | 1977-08-17 | 1981-09-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen eines Isolierschicht-Feldeffekttransistors für eine Ein-Transistor-Speicherzelle |
| GB2007430B (en) * | 1977-11-03 | 1982-03-03 | Western Electric Co | Semicinductor device and fabrication method |
| JPS54154977A (en) * | 1978-05-29 | 1979-12-06 | Fujitsu Ltd | Semiconductor device and its manufacture |
| NL184551C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
| JPS5537250U (enExample) * | 1978-08-31 | 1980-03-10 | ||
| US4238760A (en) * | 1978-10-06 | 1980-12-09 | Recognition Equipment Incorporated | Multi-spectrum photodiode devices |
| US4206005A (en) * | 1978-11-27 | 1980-06-03 | Xerox Corporation | Method of making split gate LSI VMOSFET |
| US4322822A (en) * | 1979-01-02 | 1982-03-30 | Mcpherson Roger K | High density VMOS electrically programmable ROM |
| JPS5827667B2 (ja) * | 1979-02-19 | 1983-06-10 | 富士通株式会社 | 半導体装置 |
| US4263663A (en) * | 1979-03-19 | 1981-04-21 | Motorola, Inc. | VMOS ROM Array |
| US4462040A (en) * | 1979-05-07 | 1984-07-24 | International Business Machines Corporation | Single electrode U-MOSFET random access memory |
| US4369564A (en) * | 1979-10-29 | 1983-01-25 | American Microsystems, Inc. | VMOS Memory cell and method for making same |
| US4271418A (en) * | 1979-10-29 | 1981-06-02 | American Microsystems, Inc. | VMOS Memory cell and method for making same |
| US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
| NL8005673A (nl) * | 1980-10-15 | 1982-05-03 | Philips Nv | Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor. |
| GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| JPH0682800B2 (ja) * | 1985-04-16 | 1994-10-19 | 株式会社東芝 | 半導体記憶装置 |
| JPS6210328A (ja) * | 1985-07-03 | 1987-01-19 | Taisei Corp | 水中コンクリ−ト打設装置 |
| DE3686878T2 (de) * | 1985-07-25 | 1993-02-25 | American Telephone & Telegraph | Dram-arrays hoher leistung mit graben-kondensatoren. |
| JPH0793372B2 (ja) * | 1985-12-16 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置 |
| JPS6324660A (ja) * | 1986-07-17 | 1988-02-02 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| US4763180A (en) * | 1986-12-22 | 1988-08-09 | International Business Machines Corporation | Method and structure for a high density VMOS dynamic ram array |
| JPS63189525A (ja) * | 1987-01-30 | 1988-08-05 | Shimizu Constr Co Ltd | 水中コンクリ−ト打設装置 |
| JPH04143316A (ja) * | 1990-08-08 | 1992-05-18 | Horimatsu Kensetsu Kogyo Kk | コンクリート貯留筒を用いた水中コンクリート打設工法およびコンクリート貯留筒 |
| US20240178290A1 (en) * | 2022-11-28 | 2024-05-30 | Globalfoundries U.S. Inc. | Ic structure with gate electrode fully within v-shaped cavity |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1248051A (en) * | 1968-03-01 | 1971-09-29 | Post Office | Method of making insulated gate field effect transistors |
| US3924265A (en) * | 1973-08-29 | 1975-12-02 | American Micro Syst | Low capacitance V groove MOS NOR gate and method of manufacture |
| JPS5066184A (enExample) * | 1973-10-12 | 1975-06-04 | ||
| US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
-
1976
- 1976-05-04 DE DE2619713A patent/DE2619713C2/de not_active Expired
-
1977
- 1977-02-11 GB GB5813/77A patent/GB1530094A/en not_active Expired
- 1977-04-22 US US05/789,953 patent/US4109270A/en not_active Expired - Lifetime
- 1977-05-03 FR FR7713322A patent/FR2350666A1/fr active Granted
- 1977-05-03 IT IT23107/77A patent/IT1085458B/it active
- 1977-05-03 NL NL7704864A patent/NL7704864A/xx not_active Application Discontinuation
- 1977-05-04 JP JP52051692A patent/JPS6018149B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7704864A (nl) | 1977-11-08 |
| GB1530094A (en) | 1978-10-25 |
| US4109270A (en) | 1978-08-22 |
| DE2619713A1 (de) | 1977-11-24 |
| JPS6018149B2 (ja) | 1985-05-09 |
| FR2350666B1 (enExample) | 1984-07-20 |
| JPS52134385A (en) | 1977-11-10 |
| IT1085458B (it) | 1985-05-28 |
| FR2350666A1 (fr) | 1977-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OC | Search report available | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |