JPS6018149B2 - 半導体記憶器 - Google Patents

半導体記憶器

Info

Publication number
JPS6018149B2
JPS6018149B2 JP52051692A JP5169277A JPS6018149B2 JP S6018149 B2 JPS6018149 B2 JP S6018149B2 JP 52051692 A JP52051692 A JP 52051692A JP 5169277 A JP5169277 A JP 5169277A JP S6018149 B2 JPS6018149 B2 JP S6018149B2
Authority
JP
Japan
Prior art keywords
layer
buried layer
memory device
semiconductor memory
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52051692A
Other languages
English (en)
Japanese (ja)
Other versions
JPS52134385A (en
Inventor
パウルウエルナ−・フオン・バツセ
リユ−デイガ−・ホフマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS52134385A publication Critical patent/JPS52134385A/ja
Publication of JPS6018149B2 publication Critical patent/JPS6018149B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP52051692A 1976-05-04 1977-05-04 半導体記憶器 Expired JPS6018149B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2619713A DE2619713C2 (de) 1976-05-04 1976-05-04 Halbleiterspeicher
DE2619713.7 1976-05-04

Publications (2)

Publication Number Publication Date
JPS52134385A JPS52134385A (en) 1977-11-10
JPS6018149B2 true JPS6018149B2 (ja) 1985-05-09

Family

ID=5977056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52051692A Expired JPS6018149B2 (ja) 1976-05-04 1977-05-04 半導体記憶器

Country Status (7)

Country Link
US (1) US4109270A (enExample)
JP (1) JPS6018149B2 (enExample)
DE (1) DE2619713C2 (enExample)
FR (1) FR2350666A1 (enExample)
GB (1) GB1530094A (enExample)
IT (1) IT1085458B (enExample)
NL (1) NL7704864A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6210328A (ja) * 1985-07-03 1987-01-19 Taisei Corp 水中コンクリ−ト打設装置
JPS63189525A (ja) * 1987-01-30 1988-08-05 Shimizu Constr Co Ltd 水中コンクリ−ト打設装置
JPH04143316A (ja) * 1990-08-08 1992-05-18 Horimatsu Kensetsu Kogyo Kk コンクリート貯留筒を用いた水中コンクリート打設工法およびコンクリート貯留筒

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2737073C3 (de) * 1977-08-17 1981-09-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen eines Isolierschicht-Feldeffekttransistors für eine Ein-Transistor-Speicherzelle
GB2007430B (en) * 1977-11-03 1982-03-03 Western Electric Co Semicinductor device and fabrication method
JPS54154977A (en) * 1978-05-29 1979-12-06 Fujitsu Ltd Semiconductor device and its manufacture
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
JPS5537250U (enExample) * 1978-08-31 1980-03-10
US4238760A (en) * 1978-10-06 1980-12-09 Recognition Equipment Incorporated Multi-spectrum photodiode devices
US4206005A (en) * 1978-11-27 1980-06-03 Xerox Corporation Method of making split gate LSI VMOSFET
US4322822A (en) * 1979-01-02 1982-03-30 Mcpherson Roger K High density VMOS electrically programmable ROM
JPS5827667B2 (ja) * 1979-02-19 1983-06-10 富士通株式会社 半導体装置
US4263663A (en) * 1979-03-19 1981-04-21 Motorola, Inc. VMOS ROM Array
US4462040A (en) * 1979-05-07 1984-07-24 International Business Machines Corporation Single electrode U-MOSFET random access memory
US4369564A (en) * 1979-10-29 1983-01-25 American Microsystems, Inc. VMOS Memory cell and method for making same
US4271418A (en) * 1979-10-29 1981-06-02 American Microsystems, Inc. VMOS Memory cell and method for making same
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
NL8005673A (nl) * 1980-10-15 1982-05-03 Philips Nv Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor.
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
JPH0682800B2 (ja) * 1985-04-16 1994-10-19 株式会社東芝 半導体記憶装置
DE3686878T2 (de) * 1985-07-25 1993-02-25 American Telephone & Telegraph Dram-arrays hoher leistung mit graben-kondensatoren.
JPH0793372B2 (ja) * 1985-12-16 1995-10-09 株式会社東芝 半導体記憶装置
JPS6324660A (ja) * 1986-07-17 1988-02-02 Toshiba Corp 半導体記憶装置およびその製造方法
US4763180A (en) * 1986-12-22 1988-08-09 International Business Machines Corporation Method and structure for a high density VMOS dynamic ram array
US20240178290A1 (en) * 2022-11-28 2024-05-30 Globalfoundries U.S. Inc. Ic structure with gate electrode fully within v-shaped cavity

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248051A (en) * 1968-03-01 1971-09-29 Post Office Method of making insulated gate field effect transistors
US3924265A (en) * 1973-08-29 1975-12-02 American Micro Syst Low capacitance V groove MOS NOR gate and method of manufacture
JPS5066184A (enExample) * 1973-10-12 1975-06-04
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6210328A (ja) * 1985-07-03 1987-01-19 Taisei Corp 水中コンクリ−ト打設装置
JPS63189525A (ja) * 1987-01-30 1988-08-05 Shimizu Constr Co Ltd 水中コンクリ−ト打設装置
JPH04143316A (ja) * 1990-08-08 1992-05-18 Horimatsu Kensetsu Kogyo Kk コンクリート貯留筒を用いた水中コンクリート打設工法およびコンクリート貯留筒

Also Published As

Publication number Publication date
NL7704864A (nl) 1977-11-08
GB1530094A (en) 1978-10-25
US4109270A (en) 1978-08-22
DE2619713C2 (de) 1984-12-20
DE2619713A1 (de) 1977-11-24
FR2350666B1 (enExample) 1984-07-20
JPS52134385A (en) 1977-11-10
IT1085458B (it) 1985-05-28
FR2350666A1 (fr) 1977-12-02

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