DE3686878T2 - Dram-arrays hoher leistung mit graben-kondensatoren. - Google Patents

Dram-arrays hoher leistung mit graben-kondensatoren.

Info

Publication number
DE3686878T2
DE3686878T2 DE8686905002T DE3686878T DE3686878T2 DE 3686878 T2 DE3686878 T2 DE 3686878T2 DE 8686905002 T DE8686905002 T DE 8686905002T DE 3686878 T DE3686878 T DE 3686878T DE 3686878 T2 DE3686878 T2 DE 3686878T2
Authority
DE
Germany
Prior art keywords
trench capacitors
dram arrays
performance dram
performance
arrays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686905002T
Other languages
English (en)
Other versions
DE3686878D1 (de
Inventor
Thomas Lynch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of DE3686878D1 publication Critical patent/DE3686878D1/de
Application granted granted Critical
Publication of DE3686878T2 publication Critical patent/DE3686878T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8686905002T 1985-07-25 1986-07-08 Dram-arrays hoher leistung mit graben-kondensatoren. Expired - Fee Related DE3686878T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75888585A 1985-07-25 1985-07-25
PCT/US1986/001426 WO1987000690A2 (en) 1985-07-25 1986-07-08 High-performance dram arrays including trench capacitors

Publications (2)

Publication Number Publication Date
DE3686878D1 DE3686878D1 (de) 1992-11-05
DE3686878T2 true DE3686878T2 (de) 1993-02-25

Family

ID=25053486

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686905002T Expired - Fee Related DE3686878T2 (de) 1985-07-25 1986-07-08 Dram-arrays hoher leistung mit graben-kondensatoren.

Country Status (7)

Country Link
US (1) US4794091A (de)
EP (1) EP0232361B1 (de)
JP (1) JPS63500484A (de)
KR (1) KR880700469A (de)
CA (1) CA1258125A (de)
DE (1) DE3686878T2 (de)
WO (1) WO1987000690A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207493B1 (en) 1998-08-19 2001-03-27 International Business Machines Corporation Formation of out-diffused bitline by laser anneal
US6977412B2 (en) 2003-09-05 2005-12-20 Micron Technology, Inc. Trench corner effect bidirectional flash memory cell

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
DE2737073C3 (de) * 1977-08-17 1981-09-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen eines Isolierschicht-Feldeffekttransistors für eine Ein-Transistor-Speicherzelle
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
JPS6012752A (ja) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS6074667A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体記憶装置
JPS60128658A (ja) * 1983-12-15 1985-07-09 Toshiba Corp 半導体記憶装置
US4569701A (en) * 1984-04-05 1986-02-11 At&T Bell Laboratories Technique for doping from a polysilicon transfer layer
US4688063A (en) * 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
US4672410A (en) * 1984-07-12 1987-06-09 Nippon Telegraph & Telephone Semiconductor memory device with trench surrounding each memory cell
US4683486A (en) * 1984-09-24 1987-07-28 Texas Instruments Incorporated dRAM cell and array
US4673962A (en) * 1985-03-21 1987-06-16 Texas Instruments Incorporated Vertical DRAM cell and method
US4649625A (en) * 1985-10-21 1987-03-17 International Business Machines Corporation Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
US4686552A (en) * 1986-05-20 1987-08-11 Motorola, Inc. Integrated circuit trench cell

Also Published As

Publication number Publication date
WO1987000690A2 (en) 1987-01-29
DE3686878D1 (de) 1992-11-05
KR880700469A (ko) 1988-03-15
US4794091A (en) 1988-12-27
EP0232361A1 (de) 1987-08-19
WO1987000690A3 (en) 1987-07-30
JPS63500484A (ja) 1988-02-18
EP0232361B1 (de) 1992-09-30
CA1258125A (en) 1989-08-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee