DE2229457B2 - Verfahren zum Herstellen eines Halbleiterbauelements - Google Patents

Verfahren zum Herstellen eines Halbleiterbauelements

Info

Publication number
DE2229457B2
DE2229457B2 DE2229457A DE2229457A DE2229457B2 DE 2229457 B2 DE2229457 B2 DE 2229457B2 DE 2229457 A DE2229457 A DE 2229457A DE 2229457 A DE2229457 A DE 2229457A DE 2229457 B2 DE2229457 B2 DE 2229457B2
Authority
DE
Germany
Prior art keywords
polycrystalline silicon
layer
doping
silicon layer
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2229457A
Other languages
German (de)
English (en)
Other versions
DE2229457A1 (de
Inventor
A Laker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2229457A1 publication Critical patent/DE2229457A1/de
Publication of DE2229457B2 publication Critical patent/DE2229457B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/263—
    • H10P50/667—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching

Landscapes

  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
DE2229457A 1971-06-23 1972-06-16 Verfahren zum Herstellen eines Halbleiterbauelements Withdrawn DE2229457B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15589971A 1971-06-23 1971-06-23

Publications (2)

Publication Number Publication Date
DE2229457A1 DE2229457A1 (de) 1973-01-11
DE2229457B2 true DE2229457B2 (de) 1978-04-13

Family

ID=22557220

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2229457A Withdrawn DE2229457B2 (de) 1971-06-23 1972-06-16 Verfahren zum Herstellen eines Halbleiterbauelements

Country Status (12)

Country Link
US (1) US3738880A (enExample)
JP (1) JPS5116267B1 (enExample)
AU (1) AU456871B2 (enExample)
BE (1) BE785150A (enExample)
CA (1) CA968675A (enExample)
DE (1) DE2229457B2 (enExample)
FR (1) FR2143126B1 (enExample)
GB (1) GB1332277A (enExample)
IT (1) IT955649B (enExample)
MY (1) MY7400248A (enExample)
NL (1) NL7208573A (enExample)
SE (1) SE373457B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989005963A1 (en) * 1987-12-23 1989-06-29 Siemens Aktiengesellschaft Silicon-based mass airflow sensor

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523277B2 (enExample) * 1973-05-19 1977-01-27
US3892606A (en) * 1973-06-28 1975-07-01 Ibm Method for forming silicon conductive layers utilizing differential etching rates
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
US4124933A (en) * 1974-05-21 1978-11-14 U.S. Philips Corporation Methods of manufacturing semiconductor devices
JPS5928992B2 (ja) * 1975-02-14 1984-07-17 日本電信電話株式会社 Ｍｏｓトランジスタおよびその製造方法
JPS5215262A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacturing method
US4040893A (en) * 1976-04-12 1977-08-09 General Electric Company Method of selective etching of materials utilizing masks of binary silicate glasses
US4092209A (en) * 1976-12-30 1978-05-30 Rca Corp. Silicon implanted and bombarded with phosphorus ions
US4093503A (en) * 1977-03-07 1978-06-06 International Business Machines Corporation Method for fabricating ultra-narrow metallic lines
US4323910A (en) * 1977-11-28 1982-04-06 Rca Corporation MNOS Memory transistor
US4277883A (en) * 1977-12-27 1981-07-14 Raytheon Company Integrated circuit manufacturing method
US4239559A (en) * 1978-04-21 1980-12-16 Hitachi, Ltd. Method for fabricating a semiconductor device by controlled diffusion between adjacent layers
US4200878A (en) * 1978-06-12 1980-04-29 Rca Corporation Method of fabricating a narrow base-width bipolar device and the product thereof
US4318216A (en) * 1978-11-13 1982-03-09 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4232327A (en) * 1978-11-13 1980-11-04 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4201603A (en) * 1978-12-04 1980-05-06 Rca Corporation Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
US4249968A (en) * 1978-12-29 1981-02-10 International Business Machines Corporation Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers
US4354309A (en) * 1978-12-29 1982-10-19 International Business Machines Corp. Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target
US4244001A (en) * 1979-09-28 1981-01-06 Rca Corporation Fabrication of an integrated injection logic device with narrow basewidth
US4313782A (en) * 1979-11-14 1982-02-02 Rca Corporation Method of manufacturing submicron channel transistors
US4298402A (en) * 1980-02-04 1981-11-03 Fairchild Camera & Instrument Corp. Method of fabricating self-aligned lateral bipolar transistor utilizing special masking techniques
DE3160917D1 (en) * 1980-03-22 1983-10-27 Tokyo Shibaura Electric Co Semiconductor device and method for fabricating the same
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
US4438556A (en) * 1981-01-12 1984-03-27 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions
US4402128A (en) * 1981-07-20 1983-09-06 Rca Corporation Method of forming closely spaced lines or contacts in semiconductor devices
JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
JPS6024059A (ja) * 1983-07-19 1985-02-06 Sony Corp 半導体装置の製造方法
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
JPS6269664A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 相補ｍｏｓ型半導体装置
US5136344A (en) * 1988-11-02 1992-08-04 Universal Energy Systems, Inc. High energy ion implanted silicon on insulator structure
ATE168500T1 (de) * 1992-04-29 1998-08-15 Siemens Ag Verfahren zur herstellung eines kontaktlochs zu einem dotierten bereich
US7247578B2 (en) * 2003-12-30 2007-07-24 Intel Corporation Method of varying etch selectivities of a film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989005963A1 (en) * 1987-12-23 1989-06-29 Siemens Aktiengesellschaft Silicon-based mass airflow sensor

Also Published As

Publication number Publication date
FR2143126A1 (enExample) 1973-02-02
MY7400248A (en) 1974-12-31
BE785150A (fr) 1972-10-16
GB1332277A (en) 1973-10-03
CA968675A (en) 1975-06-03
SE373457B (enExample) 1975-02-03
IT955649B (it) 1973-09-29
JPS5116267B1 (enExample) 1976-05-22
FR2143126B1 (enExample) 1977-12-30
AU456871B2 (en) 1975-01-16
US3738880A (en) 1973-06-12
NL7208573A (enExample) 1972-12-28
AU4358272A (en) 1974-01-03
DE2229457A1 (de) 1973-01-11

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Legal Events

Date Code Title Description
8239 Disposal/non-payment of the annual fee