FR2143126A1 - - Google Patents

Info

Publication number
FR2143126A1
FR2143126A1 FR7222196A FR7222196A FR2143126A1 FR 2143126 A1 FR2143126 A1 FR 2143126A1 FR 7222196 A FR7222196 A FR 7222196A FR 7222196 A FR7222196 A FR 7222196A FR 2143126 A1 FR2143126 A1 FR 2143126A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7222196A
Other languages
French (fr)
Other versions
FR2143126B1 (enExample
Inventor
A Laker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2143126A1 publication Critical patent/FR2143126A1/fr
Application granted granted Critical
Publication of FR2143126B1 publication Critical patent/FR2143126B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/263—
    • H10P50/667—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
FR7222196A 1971-06-23 1972-06-20 Expired FR2143126B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15589971A 1971-06-23 1971-06-23

Publications (2)

Publication Number Publication Date
FR2143126A1 true FR2143126A1 (enExample) 1973-02-02
FR2143126B1 FR2143126B1 (enExample) 1977-12-30

Family

ID=22557220

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7222196A Expired FR2143126B1 (enExample) 1971-06-23 1972-06-20

Country Status (12)

Country Link
US (1) US3738880A (enExample)
JP (1) JPS5116267B1 (enExample)
AU (1) AU456871B2 (enExample)
BE (1) BE785150A (enExample)
CA (1) CA968675A (enExample)
DE (1) DE2229457B2 (enExample)
FR (1) FR2143126B1 (enExample)
GB (1) GB1332277A (enExample)
IT (1) IT955649B (enExample)
MY (1) MY7400248A (enExample)
NL (1) NL7208573A (enExample)
SE (1) SE373457B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0567815A3 (en) * 1992-04-29 1994-08-17 Siemens Ag Method of making a contact hole to a doped region

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523277B2 (enExample) * 1973-05-19 1977-01-27
US3892606A (en) * 1973-06-28 1975-07-01 Ibm Method for forming silicon conductive layers utilizing differential etching rates
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
US4124933A (en) * 1974-05-21 1978-11-14 U.S. Philips Corporation Methods of manufacturing semiconductor devices
JPS5928992B2 (ja) * 1975-02-14 1984-07-17 日本電信電話株式会社 Ｍｏｓトランジスタおよびその製造方法
JPS5215262A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacturing method
US4040893A (en) * 1976-04-12 1977-08-09 General Electric Company Method of selective etching of materials utilizing masks of binary silicate glasses
US4092209A (en) * 1976-12-30 1978-05-30 Rca Corp. Silicon implanted and bombarded with phosphorus ions
US4093503A (en) * 1977-03-07 1978-06-06 International Business Machines Corporation Method for fabricating ultra-narrow metallic lines
US4323910A (en) * 1977-11-28 1982-04-06 Rca Corporation MNOS Memory transistor
US4277883A (en) * 1977-12-27 1981-07-14 Raytheon Company Integrated circuit manufacturing method
US4239559A (en) * 1978-04-21 1980-12-16 Hitachi, Ltd. Method for fabricating a semiconductor device by controlled diffusion between adjacent layers
US4200878A (en) * 1978-06-12 1980-04-29 Rca Corporation Method of fabricating a narrow base-width bipolar device and the product thereof
US4318216A (en) * 1978-11-13 1982-03-09 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4232327A (en) * 1978-11-13 1980-11-04 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4201603A (en) * 1978-12-04 1980-05-06 Rca Corporation Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
US4249968A (en) * 1978-12-29 1981-02-10 International Business Machines Corporation Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers
US4354309A (en) * 1978-12-29 1982-10-19 International Business Machines Corp. Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target
US4244001A (en) * 1979-09-28 1981-01-06 Rca Corporation Fabrication of an integrated injection logic device with narrow basewidth
US4313782A (en) * 1979-11-14 1982-02-02 Rca Corporation Method of manufacturing submicron channel transistors
US4298402A (en) * 1980-02-04 1981-11-03 Fairchild Camera & Instrument Corp. Method of fabricating self-aligned lateral bipolar transistor utilizing special masking techniques
DE3160917D1 (en) * 1980-03-22 1983-10-27 Tokyo Shibaura Electric Co Semiconductor device and method for fabricating the same
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
US4438556A (en) * 1981-01-12 1984-03-27 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions
US4402128A (en) * 1981-07-20 1983-09-06 Rca Corporation Method of forming closely spaced lines or contacts in semiconductor devices
JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
JPS6024059A (ja) * 1983-07-19 1985-02-06 Sony Corp 半導体装置の製造方法
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
JPS6269664A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 相補ｍｏｓ型半導体装置
US4888988A (en) * 1987-12-23 1989-12-26 Siemens-Bendix Automotive Electronics L.P. Silicon based mass airflow sensor and its fabrication method
US5136344A (en) * 1988-11-02 1992-08-04 Universal Energy Systems, Inc. High energy ion implanted silicon on insulator structure
US7247578B2 (en) * 2003-12-30 2007-07-24 Intel Corporation Method of varying etch selectivities of a film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0567815A3 (en) * 1992-04-29 1994-08-17 Siemens Ag Method of making a contact hole to a doped region
US6136717A (en) * 1992-04-29 2000-10-24 Siemens Aktiengesellschaft Method for producing a via hole to a doped region

Also Published As

Publication number Publication date
MY7400248A (en) 1974-12-31
BE785150A (fr) 1972-10-16
GB1332277A (en) 1973-10-03
CA968675A (en) 1975-06-03
DE2229457B2 (de) 1978-04-13
SE373457B (enExample) 1975-02-03
IT955649B (it) 1973-09-29
JPS5116267B1 (enExample) 1976-05-22
FR2143126B1 (enExample) 1977-12-30
AU456871B2 (en) 1975-01-16
US3738880A (en) 1973-06-12
NL7208573A (enExample) 1972-12-28
AU4358272A (en) 1974-01-03
DE2229457A1 (de) 1973-01-11

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Legal Events

Date Code Title Description
ST Notification of lapse