GB1332277A - Method of making a semiconductor device - Google Patents

Method of making a semiconductor device

Info

Publication number
GB1332277A
GB1332277A GB2815972A GB2815972A GB1332277A GB 1332277 A GB1332277 A GB 1332277A GB 2815972 A GB2815972 A GB 2815972A GB 2815972 A GB2815972 A GB 2815972A GB 1332277 A GB1332277 A GB 1332277A
Authority
GB
United Kingdom
Prior art keywords
layer
polycrystalline
insulator
portions
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2815972A
Other languages
English (en)
Inventor
A Laker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1332277A publication Critical patent/GB1332277A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/263—
    • H10P50/667—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching

Landscapes

  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
GB2815972A 1971-06-23 1972-06-15 Method of making a semiconductor device Expired GB1332277A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15589971A 1971-06-23 1971-06-23

Publications (1)

Publication Number Publication Date
GB1332277A true GB1332277A (en) 1973-10-03

Family

ID=22557220

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2815972A Expired GB1332277A (en) 1971-06-23 1972-06-15 Method of making a semiconductor device

Country Status (12)

Country Link
US (1) US3738880A (enExample)
JP (1) JPS5116267B1 (enExample)
AU (1) AU456871B2 (enExample)
BE (1) BE785150A (enExample)
CA (1) CA968675A (enExample)
DE (1) DE2229457B2 (enExample)
FR (1) FR2143126B1 (enExample)
GB (1) GB1332277A (enExample)
IT (1) IT955649B (enExample)
MY (1) MY7400248A (enExample)
NL (1) NL7208573A (enExample)
SE (1) SE373457B (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523277B2 (enExample) * 1973-05-19 1977-01-27
US3892606A (en) * 1973-06-28 1975-07-01 Ibm Method for forming silicon conductive layers utilizing differential etching rates
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
US4124933A (en) * 1974-05-21 1978-11-14 U.S. Philips Corporation Methods of manufacturing semiconductor devices
JPS5928992B2 (ja) * 1975-02-14 1984-07-17 日本電信電話株式会社 Ｍｏｓトランジスタおよびその製造方法
JPS5215262A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacturing method
US4040893A (en) * 1976-04-12 1977-08-09 General Electric Company Method of selective etching of materials utilizing masks of binary silicate glasses
US4092209A (en) * 1976-12-30 1978-05-30 Rca Corp. Silicon implanted and bombarded with phosphorus ions
US4093503A (en) * 1977-03-07 1978-06-06 International Business Machines Corporation Method for fabricating ultra-narrow metallic lines
US4323910A (en) * 1977-11-28 1982-04-06 Rca Corporation MNOS Memory transistor
US4277883A (en) * 1977-12-27 1981-07-14 Raytheon Company Integrated circuit manufacturing method
US4239559A (en) * 1978-04-21 1980-12-16 Hitachi, Ltd. Method for fabricating a semiconductor device by controlled diffusion between adjacent layers
US4200878A (en) * 1978-06-12 1980-04-29 Rca Corporation Method of fabricating a narrow base-width bipolar device and the product thereof
US4318216A (en) * 1978-11-13 1982-03-09 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4232327A (en) * 1978-11-13 1980-11-04 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4201603A (en) * 1978-12-04 1980-05-06 Rca Corporation Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
US4249968A (en) * 1978-12-29 1981-02-10 International Business Machines Corporation Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers
US4354309A (en) * 1978-12-29 1982-10-19 International Business Machines Corp. Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target
US4244001A (en) * 1979-09-28 1981-01-06 Rca Corporation Fabrication of an integrated injection logic device with narrow basewidth
US4313782A (en) * 1979-11-14 1982-02-02 Rca Corporation Method of manufacturing submicron channel transistors
US4298402A (en) * 1980-02-04 1981-11-03 Fairchild Camera & Instrument Corp. Method of fabricating self-aligned lateral bipolar transistor utilizing special masking techniques
DE3160917D1 (en) * 1980-03-22 1983-10-27 Tokyo Shibaura Electric Co Semiconductor device and method for fabricating the same
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
US4438556A (en) * 1981-01-12 1984-03-27 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions
US4402128A (en) * 1981-07-20 1983-09-06 Rca Corporation Method of forming closely spaced lines or contacts in semiconductor devices
JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
JPS6024059A (ja) * 1983-07-19 1985-02-06 Sony Corp 半導体装置の製造方法
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
JPS6269664A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 相補ｍｏｓ型半導体装置
US4888988A (en) * 1987-12-23 1989-12-26 Siemens-Bendix Automotive Electronics L.P. Silicon based mass airflow sensor and its fabrication method
US5136344A (en) * 1988-11-02 1992-08-04 Universal Energy Systems, Inc. High energy ion implanted silicon on insulator structure
ATE168500T1 (de) * 1992-04-29 1998-08-15 Siemens Ag Verfahren zur herstellung eines kontaktlochs zu einem dotierten bereich
US7247578B2 (en) * 2003-12-30 2007-07-24 Intel Corporation Method of varying etch selectivities of a film

Also Published As

Publication number Publication date
FR2143126A1 (enExample) 1973-02-02
MY7400248A (en) 1974-12-31
BE785150A (fr) 1972-10-16
CA968675A (en) 1975-06-03
DE2229457B2 (de) 1978-04-13
SE373457B (enExample) 1975-02-03
IT955649B (it) 1973-09-29
JPS5116267B1 (enExample) 1976-05-22
FR2143126B1 (enExample) 1977-12-30
AU456871B2 (en) 1975-01-16
US3738880A (en) 1973-06-12
NL7208573A (enExample) 1972-12-28
AU4358272A (en) 1974-01-03
DE2229457A1 (de) 1973-01-11

Similar Documents

Publication Publication Date Title
GB1332277A (en) Method of making a semiconductor device
GB1506066A (en) Manufacture of semiconductor devices
GB1488151A (en) Field effect devices
GB1501114A (en) Method of making a semiconductor device
GB1382936A (en) Integrated circuit fabrication method
GB1317014A (en) Contact system for semiconductor devices
GB1093664A (en) Semiconductor process
EP0041786A1 (en) Process for concurrent formation of base diffusion and p+ profile from single source predeposition
GB1188949A (en) Semiconductor Device having Insulating Films and Method of Making Same.
JPS5740975A (en) Manufacture for semiconductor device
GB1519995A (en) Semiconductor devices
JPS54162980A (en) Manufacture of semiconductor device
GB1308764A (en) Production of semiconductor components
GB1358715A (en) Manufacture of semiconductor devices
JPS6484659A (en) Manufacture of semiconductor device
GB1221868A (en) Semiconductor device
GB1099049A (en) A method of manufacturing transistors
JPS53144686A (en) Production of semiconductor device
JPS5339093A (en) Production of silicon gate complementary type mis semiconductor device
JPS6464258A (en) Manufacture of semiconductor device
JPS551157A (en) Method of fabricating semiconductor device
GB1443479A (en) Production of integrated circuits with field-effect transistors having different conductivity states
JPS6418219A (en) Manufacture of trench-type memory cell
JPS5650579A (en) Manufacture of junction type field effect semiconductor device
GB1236054A (en) Improvements in and relating to methods of manufacturing semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee