SE373457B - - Google Patents

Info

Publication number
SE373457B
SE373457B SE7208117A SE811772A SE373457B SE 373457 B SE373457 B SE 373457B SE 7208117 A SE7208117 A SE 7208117A SE 811772 A SE811772 A SE 811772A SE 373457 B SE373457 B SE 373457B
Authority
SE
Sweden
Application number
SE7208117A
Inventor
A Laker
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE373457B publication Critical patent/SE373457B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
    • H01L21/32132Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/924To facilitate selective etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
SE7208117A 1971-06-23 1972-06-20 SE373457B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15589971A 1971-06-23 1971-06-23

Publications (1)

Publication Number Publication Date
SE373457B true SE373457B (xx) 1975-02-03

Family

ID=22557220

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7208117A SE373457B (xx) 1971-06-23 1972-06-20

Country Status (12)

Country Link
US (1) US3738880A (xx)
JP (1) JPS5116267B1 (xx)
AU (1) AU456871B2 (xx)
BE (1) BE785150A (xx)
CA (1) CA968675A (xx)
DE (1) DE2229457B2 (xx)
FR (1) FR2143126B1 (xx)
GB (1) GB1332277A (xx)
IT (1) IT955649B (xx)
MY (1) MY7400248A (xx)
NL (1) NL7208573A (xx)
SE (1) SE373457B (xx)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523277B2 (xx) * 1973-05-19 1977-01-27
US3892606A (en) * 1973-06-28 1975-07-01 Ibm Method for forming silicon conductive layers utilizing differential etching rates
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
US4124933A (en) * 1974-05-21 1978-11-14 U.S. Philips Corporation Methods of manufacturing semiconductor devices
JPS5928992B2 (ja) * 1975-02-14 1984-07-17 日本電信電話株式会社 Mosトランジスタおよびその製造方法
JPS5215262A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacturing method
US4040893A (en) * 1976-04-12 1977-08-09 General Electric Company Method of selective etching of materials utilizing masks of binary silicate glasses
US4092209A (en) * 1976-12-30 1978-05-30 Rca Corp. Silicon implanted and bombarded with phosphorus ions
US4093503A (en) * 1977-03-07 1978-06-06 International Business Machines Corporation Method for fabricating ultra-narrow metallic lines
US4323910A (en) * 1977-11-28 1982-04-06 Rca Corporation MNOS Memory transistor
US4277883A (en) * 1977-12-27 1981-07-14 Raytheon Company Integrated circuit manufacturing method
US4239559A (en) * 1978-04-21 1980-12-16 Hitachi, Ltd. Method for fabricating a semiconductor device by controlled diffusion between adjacent layers
US4200878A (en) * 1978-06-12 1980-04-29 Rca Corporation Method of fabricating a narrow base-width bipolar device and the product thereof
US4232327A (en) * 1978-11-13 1980-11-04 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4318216A (en) * 1978-11-13 1982-03-09 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4201603A (en) * 1978-12-04 1980-05-06 Rca Corporation Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
US4249968A (en) * 1978-12-29 1981-02-10 International Business Machines Corporation Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers
US4354309A (en) * 1978-12-29 1982-10-19 International Business Machines Corp. Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target
US4244001A (en) * 1979-09-28 1981-01-06 Rca Corporation Fabrication of an integrated injection logic device with narrow basewidth
US4313782A (en) * 1979-11-14 1982-02-02 Rca Corporation Method of manufacturing submicron channel transistors
US4298402A (en) * 1980-02-04 1981-11-03 Fairchild Camera & Instrument Corp. Method of fabricating self-aligned lateral bipolar transistor utilizing special masking techniques
EP0036620B1 (en) * 1980-03-22 1983-09-21 Kabushiki Kaisha Toshiba Semiconductor device and method for fabricating the same
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
US4438556A (en) * 1981-01-12 1984-03-27 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions
US4402128A (en) * 1981-07-20 1983-09-06 Rca Corporation Method of forming closely spaced lines or contacts in semiconductor devices
JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
JPS6024059A (ja) * 1983-07-19 1985-02-06 Sony Corp 半導体装置の製造方法
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
JPS6269664A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 相補mos型半導体装置
US4888988A (en) * 1987-12-23 1989-12-26 Siemens-Bendix Automotive Electronics L.P. Silicon based mass airflow sensor and its fabrication method
US5136344A (en) * 1988-11-02 1992-08-04 Universal Energy Systems, Inc. High energy ion implanted silicon on insulator structure
SG71664A1 (en) * 1992-04-29 2000-04-18 Siemens Ag Method for the production of a contact hole to a doped region
US7247578B2 (en) * 2003-12-30 2007-07-24 Intel Corporation Method of varying etch selectivities of a film

Also Published As

Publication number Publication date
BE785150A (fr) 1972-10-16
DE2229457A1 (de) 1973-01-11
IT955649B (it) 1973-09-29
AU456871B2 (en) 1975-01-16
FR2143126A1 (xx) 1973-02-02
DE2229457B2 (de) 1978-04-13
CA968675A (en) 1975-06-03
JPS5116267B1 (xx) 1976-05-22
FR2143126B1 (xx) 1977-12-30
NL7208573A (xx) 1972-12-28
MY7400248A (en) 1974-12-31
AU4358272A (en) 1974-01-03
GB1332277A (en) 1973-10-03
US3738880A (en) 1973-06-12

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