SE373457B - - Google Patents
Info
- Publication number
- SE373457B SE373457B SE7208117A SE811772A SE373457B SE 373457 B SE373457 B SE 373457B SE 7208117 A SE7208117 A SE 7208117A SE 811772 A SE811772 A SE 811772A SE 373457 B SE373457 B SE 373457B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
- H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15589971A | 1971-06-23 | 1971-06-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE373457B true SE373457B (xx) | 1975-02-03 |
Family
ID=22557220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7208117A SE373457B (xx) | 1971-06-23 | 1972-06-20 |
Country Status (12)
Country | Link |
---|---|
US (1) | US3738880A (xx) |
JP (1) | JPS5116267B1 (xx) |
AU (1) | AU456871B2 (xx) |
BE (1) | BE785150A (xx) |
CA (1) | CA968675A (xx) |
DE (1) | DE2229457B2 (xx) |
FR (1) | FR2143126B1 (xx) |
GB (1) | GB1332277A (xx) |
IT (1) | IT955649B (xx) |
MY (1) | MY7400248A (xx) |
NL (1) | NL7208573A (xx) |
SE (1) | SE373457B (xx) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS523277B2 (xx) * | 1973-05-19 | 1977-01-27 | ||
US3892606A (en) * | 1973-06-28 | 1975-07-01 | Ibm | Method for forming silicon conductive layers utilizing differential etching rates |
GB1501114A (en) * | 1974-04-25 | 1978-02-15 | Rca Corp | Method of making a semiconductor device |
US4124933A (en) * | 1974-05-21 | 1978-11-14 | U.S. Philips Corporation | Methods of manufacturing semiconductor devices |
JPS5928992B2 (ja) * | 1975-02-14 | 1984-07-17 | 日本電信電話株式会社 | Mosトランジスタおよびその製造方法 |
JPS5215262A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacturing method |
US4040893A (en) * | 1976-04-12 | 1977-08-09 | General Electric Company | Method of selective etching of materials utilizing masks of binary silicate glasses |
US4092209A (en) * | 1976-12-30 | 1978-05-30 | Rca Corp. | Silicon implanted and bombarded with phosphorus ions |
US4093503A (en) * | 1977-03-07 | 1978-06-06 | International Business Machines Corporation | Method for fabricating ultra-narrow metallic lines |
US4323910A (en) * | 1977-11-28 | 1982-04-06 | Rca Corporation | MNOS Memory transistor |
US4277883A (en) * | 1977-12-27 | 1981-07-14 | Raytheon Company | Integrated circuit manufacturing method |
US4239559A (en) * | 1978-04-21 | 1980-12-16 | Hitachi, Ltd. | Method for fabricating a semiconductor device by controlled diffusion between adjacent layers |
US4200878A (en) * | 1978-06-12 | 1980-04-29 | Rca Corporation | Method of fabricating a narrow base-width bipolar device and the product thereof |
US4232327A (en) * | 1978-11-13 | 1980-11-04 | Rca Corporation | Extended drain self-aligned silicon gate MOSFET |
US4318216A (en) * | 1978-11-13 | 1982-03-09 | Rca Corporation | Extended drain self-aligned silicon gate MOSFET |
US4201603A (en) * | 1978-12-04 | 1980-05-06 | Rca Corporation | Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon |
US4249968A (en) * | 1978-12-29 | 1981-02-10 | International Business Machines Corporation | Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers |
US4354309A (en) * | 1978-12-29 | 1982-10-19 | International Business Machines Corp. | Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon |
US4231820A (en) * | 1979-02-21 | 1980-11-04 | Rca Corporation | Method of making a silicon diode array target |
US4244001A (en) * | 1979-09-28 | 1981-01-06 | Rca Corporation | Fabrication of an integrated injection logic device with narrow basewidth |
US4313782A (en) * | 1979-11-14 | 1982-02-02 | Rca Corporation | Method of manufacturing submicron channel transistors |
US4298402A (en) * | 1980-02-04 | 1981-11-03 | Fairchild Camera & Instrument Corp. | Method of fabricating self-aligned lateral bipolar transistor utilizing special masking techniques |
EP0036620B1 (en) * | 1980-03-22 | 1983-09-21 | Kabushiki Kaisha Toshiba | Semiconductor device and method for fabricating the same |
US4312680A (en) * | 1980-03-31 | 1982-01-26 | Rca Corporation | Method of manufacturing submicron channel transistors |
US4438556A (en) * | 1981-01-12 | 1984-03-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions |
US4402128A (en) * | 1981-07-20 | 1983-09-06 | Rca Corporation | Method of forming closely spaced lines or contacts in semiconductor devices |
JPS59136977A (ja) * | 1983-01-26 | 1984-08-06 | Hitachi Ltd | 圧力感知半導体装置とその製造法 |
US4496419A (en) * | 1983-02-28 | 1985-01-29 | Cornell Research Foundation, Inc. | Fine line patterning method for submicron devices |
JPS6024059A (ja) * | 1983-07-19 | 1985-02-06 | Sony Corp | 半導体装置の製造方法 |
JPS6055655A (ja) * | 1983-09-07 | 1985-03-30 | Nissan Motor Co Ltd | 梁構造体を有する半導体装置 |
JPS6269664A (ja) * | 1985-09-24 | 1987-03-30 | Toshiba Corp | 相補mos型半導体装置 |
US4888988A (en) * | 1987-12-23 | 1989-12-26 | Siemens-Bendix Automotive Electronics L.P. | Silicon based mass airflow sensor and its fabrication method |
US5136344A (en) * | 1988-11-02 | 1992-08-04 | Universal Energy Systems, Inc. | High energy ion implanted silicon on insulator structure |
SG71664A1 (en) * | 1992-04-29 | 2000-04-18 | Siemens Ag | Method for the production of a contact hole to a doped region |
US7247578B2 (en) * | 2003-12-30 | 2007-07-24 | Intel Corporation | Method of varying etch selectivities of a film |
-
1971
- 1971-06-23 US US00155899A patent/US3738880A/en not_active Expired - Lifetime
-
1972
- 1972-05-01 CA CA141,014A patent/CA968675A/en not_active Expired
- 1972-05-18 IT IT24550/72A patent/IT955649B/it active
- 1972-06-15 GB GB2815972A patent/GB1332277A/en not_active Expired
- 1972-06-16 DE DE2229457A patent/DE2229457B2/de not_active Withdrawn
- 1972-06-19 AU AU43582/72A patent/AU456871B2/en not_active Expired
- 1972-06-20 SE SE7208117A patent/SE373457B/xx unknown
- 1972-06-20 BE BE785150A patent/BE785150A/xx unknown
- 1972-06-20 FR FR7222196A patent/FR2143126B1/fr not_active Expired
- 1972-06-21 JP JP47062291A patent/JPS5116267B1/ja active Pending
- 1972-06-22 NL NL7208573A patent/NL7208573A/xx not_active Application Discontinuation
-
1974
- 1974-12-30 MY MY248/74A patent/MY7400248A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
BE785150A (fr) | 1972-10-16 |
DE2229457A1 (de) | 1973-01-11 |
IT955649B (it) | 1973-09-29 |
AU456871B2 (en) | 1975-01-16 |
FR2143126A1 (xx) | 1973-02-02 |
DE2229457B2 (de) | 1978-04-13 |
CA968675A (en) | 1975-06-03 |
JPS5116267B1 (xx) | 1976-05-22 |
FR2143126B1 (xx) | 1977-12-30 |
NL7208573A (xx) | 1972-12-28 |
MY7400248A (en) | 1974-12-31 |
AU4358272A (en) | 1974-01-03 |
GB1332277A (en) | 1973-10-03 |
US3738880A (en) | 1973-06-12 |