DE2201028C3 - Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens - Google Patents
Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses VerfahrensInfo
- Publication number
- DE2201028C3 DE2201028C3 DE2201028A DE2201028A DE2201028C3 DE 2201028 C3 DE2201028 C3 DE 2201028C3 DE 2201028 A DE2201028 A DE 2201028A DE 2201028 A DE2201028 A DE 2201028A DE 2201028 C3 DE2201028 C3 DE 2201028C3
- Authority
- DE
- Germany
- Prior art keywords
- gate electrode
- effect transistor
- field effect
- substrate
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 47
- 238000007667 floating Methods 0.000 claims description 21
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 SiO Chemical compound 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10664371A | 1971-01-15 | 1971-01-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2201028A1 DE2201028A1 (de) | 1972-08-31 |
| DE2201028B2 DE2201028B2 (de) | 1979-01-18 |
| DE2201028C3 true DE2201028C3 (de) | 1981-07-09 |
Family
ID=22312502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2201028A Expired DE2201028C3 (de) | 1971-01-15 | 1972-01-11 | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5146382B1 (enExample) |
| BE (1) | BE777996A (enExample) |
| CA (1) | CA946524A (enExample) |
| DE (1) | DE2201028C3 (enExample) |
| FR (1) | FR2121824B1 (enExample) |
| GB (1) | GB1383981A (enExample) |
| IT (1) | IT962050B (enExample) |
| NL (1) | NL7200562A (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3797000A (en) * | 1972-12-29 | 1974-03-12 | Ibm | Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information |
| US3836992A (en) * | 1973-03-16 | 1974-09-17 | Ibm | Electrically erasable floating gate fet memory cell |
| JPS5613029B2 (enExample) * | 1973-09-21 | 1981-03-25 | ||
| DE2505816C3 (de) * | 1974-09-20 | 1982-04-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
| DE2513207C2 (de) * | 1974-09-20 | 1982-07-01 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2812049C2 (de) * | 1974-09-20 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2638730C2 (de) * | 1974-09-20 | 1982-10-28 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET |
| DE2445079C3 (de) * | 1974-09-20 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Speicher-Feldeffekttransistor |
| DE2643987C2 (de) * | 1974-09-20 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2560220C2 (de) * | 1975-03-25 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| JPS5554415A (en) * | 1978-10-16 | 1980-04-21 | Nippon Gakki Seizo Kk | Method and device for space set averaging for reverberation waveform |
| DE2845328C2 (de) * | 1978-10-18 | 1986-04-30 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Speichertransistor |
| JPS6162824A (ja) * | 1985-06-22 | 1986-03-31 | Nippon Gakki Seizo Kk | 残響デ−タ圧縮取込方法およびその装置 |
| WO2001024268A1 (en) * | 1999-09-24 | 2001-04-05 | Intel Corporation | A nonvolatile memory device with a high work function floating-gate and method of fabrication |
| US6518618B1 (en) | 1999-12-03 | 2003-02-11 | Intel Corporation | Integrated memory cell and method of fabrication |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| CA813537A (en) * | 1967-10-17 | 1969-05-20 | Joseph H. Scott, Jr. | Semiconductor memory device |
-
1972
- 1972-01-11 DE DE2201028A patent/DE2201028C3/de not_active Expired
- 1972-01-13 BE BE777996A patent/BE777996A/xx unknown
- 1972-01-13 FR FR7201101A patent/FR2121824B1/fr not_active Expired
- 1972-01-14 GB GB196072A patent/GB1383981A/en not_active Expired
- 1972-01-14 NL NL7200562A patent/NL7200562A/xx not_active Application Discontinuation
- 1972-01-14 CA CA132,413A patent/CA946524A/en not_active Expired
- 1972-01-14 IT IT19378/72A patent/IT962050B/it active
- 1972-01-17 JP JP47006261A patent/JPS5146382B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA946524A (en) | 1974-04-30 |
| JPS5146382B1 (enExample) | 1976-12-08 |
| DE2201028B2 (de) | 1979-01-18 |
| BE777996A (fr) | 1972-05-02 |
| FR2121824A1 (enExample) | 1972-08-25 |
| GB1383981A (en) | 1974-02-12 |
| FR2121824B1 (enExample) | 1977-04-01 |
| NL7200562A (enExample) | 1972-07-18 |
| IT962050B (it) | 1973-12-20 |
| DE2201028A1 (de) | 1972-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |