BE777996A - Dispositif a memoire effacable a effet de champ - Google Patents
Dispositif a memoire effacable a effet de champInfo
- Publication number
- BE777996A BE777996A BE777996A BE777996A BE777996A BE 777996 A BE777996 A BE 777996A BE 777996 A BE777996 A BE 777996A BE 777996 A BE777996 A BE 777996A BE 777996 A BE777996 A BE 777996A
- Authority
- BE
- Belgium
- Prior art keywords
- effect
- field
- memory device
- erasable memory
- erasable
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10664371A | 1971-01-15 | 1971-01-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE777996A true BE777996A (fr) | 1972-05-02 |
Family
ID=22312502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE777996A BE777996A (fr) | 1971-01-15 | 1972-01-13 | Dispositif a memoire effacable a effet de champ |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5146382B1 (enExample) |
| BE (1) | BE777996A (enExample) |
| CA (1) | CA946524A (enExample) |
| DE (1) | DE2201028C3 (enExample) |
| FR (1) | FR2121824B1 (enExample) |
| GB (1) | GB1383981A (enExample) |
| IT (1) | IT962050B (enExample) |
| NL (1) | NL7200562A (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3797000A (en) * | 1972-12-29 | 1974-03-12 | Ibm | Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information |
| US3836992A (en) * | 1973-03-16 | 1974-09-17 | Ibm | Electrically erasable floating gate fet memory cell |
| JPS5613029B2 (enExample) * | 1973-09-21 | 1981-03-25 | ||
| DE2505816C3 (de) * | 1974-09-20 | 1982-04-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
| DE2513207C2 (de) * | 1974-09-20 | 1982-07-01 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2812049C2 (de) * | 1974-09-20 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2638730C2 (de) * | 1974-09-20 | 1982-10-28 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET |
| DE2445079C3 (de) * | 1974-09-20 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Speicher-Feldeffekttransistor |
| DE2643987C2 (de) * | 1974-09-20 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2560220C2 (de) * | 1975-03-25 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| JPS5554415A (en) * | 1978-10-16 | 1980-04-21 | Nippon Gakki Seizo Kk | Method and device for space set averaging for reverberation waveform |
| DE2845328C2 (de) * | 1978-10-18 | 1986-04-30 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Speichertransistor |
| JPS6162824A (ja) * | 1985-06-22 | 1986-03-31 | Nippon Gakki Seizo Kk | 残響デ−タ圧縮取込方法およびその装置 |
| WO2001024268A1 (en) * | 1999-09-24 | 2001-04-05 | Intel Corporation | A nonvolatile memory device with a high work function floating-gate and method of fabrication |
| US6518618B1 (en) | 1999-12-03 | 2003-02-11 | Intel Corporation | Integrated memory cell and method of fabrication |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| CA813537A (en) * | 1967-10-17 | 1969-05-20 | Joseph H. Scott, Jr. | Semiconductor memory device |
-
1972
- 1972-01-11 DE DE2201028A patent/DE2201028C3/de not_active Expired
- 1972-01-13 BE BE777996A patent/BE777996A/xx unknown
- 1972-01-13 FR FR7201101A patent/FR2121824B1/fr not_active Expired
- 1972-01-14 GB GB196072A patent/GB1383981A/en not_active Expired
- 1972-01-14 NL NL7200562A patent/NL7200562A/xx not_active Application Discontinuation
- 1972-01-14 CA CA132,413A patent/CA946524A/en not_active Expired
- 1972-01-14 IT IT19378/72A patent/IT962050B/it active
- 1972-01-17 JP JP47006261A patent/JPS5146382B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA946524A (en) | 1974-04-30 |
| JPS5146382B1 (enExample) | 1976-12-08 |
| DE2201028B2 (de) | 1979-01-18 |
| FR2121824A1 (enExample) | 1972-08-25 |
| GB1383981A (en) | 1974-02-12 |
| FR2121824B1 (enExample) | 1977-04-01 |
| DE2201028C3 (de) | 1981-07-09 |
| NL7200562A (enExample) | 1972-07-18 |
| IT962050B (it) | 1973-12-20 |
| DE2201028A1 (de) | 1972-08-31 |
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