IT962050B - Dispositivo di porta elettronica flottante alterabile per via elet trica e metodo di alterazione del lo stesso - Google Patents

Dispositivo di porta elettronica flottante alterabile per via elet trica e metodo di alterazione del lo stesso

Info

Publication number
IT962050B
IT962050B IT19378/72A IT1937872A IT962050B IT 962050 B IT962050 B IT 962050B IT 19378/72 A IT19378/72 A IT 19378/72A IT 1937872 A IT1937872 A IT 1937872A IT 962050 B IT962050 B IT 962050B
Authority
IT
Italy
Prior art keywords
alterable
alteration
same
floating door
electronic floating
Prior art date
Application number
IT19378/72A
Other languages
English (en)
Italian (it)
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of IT962050B publication Critical patent/IT962050B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/681Floating-gate IGFETs having only two programming levels
    • H10D30/684Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
IT19378/72A 1971-01-15 1972-01-14 Dispositivo di porta elettronica flottante alterabile per via elet trica e metodo di alterazione del lo stesso IT962050B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10664371A 1971-01-15 1971-01-15

Publications (1)

Publication Number Publication Date
IT962050B true IT962050B (it) 1973-12-20

Family

ID=22312502

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19378/72A IT962050B (it) 1971-01-15 1972-01-14 Dispositivo di porta elettronica flottante alterabile per via elet trica e metodo di alterazione del lo stesso

Country Status (8)

Country Link
JP (1) JPS5146382B1 (enExample)
BE (1) BE777996A (enExample)
CA (1) CA946524A (enExample)
DE (1) DE2201028C3 (enExample)
FR (1) FR2121824B1 (enExample)
GB (1) GB1383981A (enExample)
IT (1) IT962050B (enExample)
NL (1) NL7200562A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3797000A (en) * 1972-12-29 1974-03-12 Ibm Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
JPS5613029B2 (enExample) * 1973-09-21 1981-03-25
DE2505816C3 (de) * 1974-09-20 1982-04-22 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE2513207C2 (de) * 1974-09-20 1982-07-01 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2812049C2 (de) * 1974-09-20 1982-05-27 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2638730C2 (de) * 1974-09-20 1982-10-28 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET
DE2445079C3 (de) * 1974-09-20 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Speicher-Feldeffekttransistor
DE2643987C2 (de) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2560220C2 (de) * 1975-03-25 1982-11-25 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
JPS5554415A (en) * 1978-10-16 1980-04-21 Nippon Gakki Seizo Kk Method and device for space set averaging for reverberation waveform
DE2845328C2 (de) * 1978-10-18 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Speichertransistor
JPS6162824A (ja) * 1985-06-22 1986-03-31 Nippon Gakki Seizo Kk 残響デ−タ圧縮取込方法およびその装置
WO2001024268A1 (en) * 1999-09-24 2001-04-05 Intel Corporation A nonvolatile memory device with a high work function floating-gate and method of fabrication
US6518618B1 (en) 1999-12-03 2003-02-11 Intel Corporation Integrated memory cell and method of fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device

Also Published As

Publication number Publication date
CA946524A (en) 1974-04-30
JPS5146382B1 (enExample) 1976-12-08
DE2201028B2 (de) 1979-01-18
BE777996A (fr) 1972-05-02
FR2121824A1 (enExample) 1972-08-25
GB1383981A (en) 1974-02-12
FR2121824B1 (enExample) 1977-04-01
DE2201028C3 (de) 1981-07-09
NL7200562A (enExample) 1972-07-18
DE2201028A1 (de) 1972-08-31

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