DE19842441B4 - Halbleiterbauelement und Verfahren zu seiner Herstellung - Google Patents

Halbleiterbauelement und Verfahren zu seiner Herstellung Download PDF

Info

Publication number
DE19842441B4
DE19842441B4 DE19842441A DE19842441A DE19842441B4 DE 19842441 B4 DE19842441 B4 DE 19842441B4 DE 19842441 A DE19842441 A DE 19842441A DE 19842441 A DE19842441 A DE 19842441A DE 19842441 B4 DE19842441 B4 DE 19842441B4
Authority
DE
Germany
Prior art keywords
semiconductor
semiconductor substrate
layer
transistor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19842441A
Other languages
German (de)
English (en)
Other versions
DE19842441A1 (de
Inventor
Shigenobu Maeda
Tadashi Nishimura
Kazuhito Tsutsumi
Shigeto Maegawa
Yuuichi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE19842441A1 publication Critical patent/DE19842441A1/de
Application granted granted Critical
Publication of DE19842441B4 publication Critical patent/DE19842441B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
    • H01L2224/03914—Methods of manufacturing bonding areas involving a specific sequence of method steps the bonding area, e.g. under bump metallisation [UBM], being used as a mask for patterning other parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H01L2224/1148—Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps
    • H01L2224/1191—Forming a passivation layer after forming the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Wire Bonding (AREA)
DE19842441A 1998-02-26 1998-09-16 Halbleiterbauelement und Verfahren zu seiner Herstellung Expired - Fee Related DE19842441B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10045459A JPH11243208A (ja) 1998-02-26 1998-02-26 半導体装置及びその製造方法
JPP10-45459 1998-02-26

Publications (2)

Publication Number Publication Date
DE19842441A1 DE19842441A1 (de) 1999-09-09
DE19842441B4 true DE19842441B4 (de) 2004-07-29

Family

ID=12719953

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19842441A Expired - Fee Related DE19842441B4 (de) 1998-02-26 1998-09-16 Halbleiterbauelement und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
US (2) US6459125B2 (enExample)
JP (1) JPH11243208A (enExample)
KR (2) KR19990071421A (enExample)
DE (1) DE19842441B4 (enExample)
FR (1) FR2775387B1 (enExample)
TW (1) TW382817B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11243208A (ja) * 1998-02-26 1999-09-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3824845B2 (ja) * 2000-06-21 2006-09-20 セイコーエプソン株式会社 Ｌｃｄドライバｉｃチップ
JP2002270611A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2003045958A (ja) * 2001-07-27 2003-02-14 Denso Corp 半導体装置及びその製造方法
US6762503B2 (en) * 2002-08-29 2004-07-13 Micron Technology, Inc. Innovative solder ball pad structure to ease design rule, methods of fabricating same and substrates, electronic device assemblies and systems employing same
US6841874B1 (en) 2002-11-01 2005-01-11 Amkor Technology, Inc. Wafer-level chip-scale package
DE10308275A1 (de) 2003-02-26 2004-09-16 Advanced Micro Devices, Inc., Sunnyvale Strahlungsresistentes Halbleiterbauteil
JP2008543604A (ja) * 2005-06-15 2008-12-04 エヌエックスピー ビー ヴィ 積層体ならびにその使用方法および製造方法
US7736915B2 (en) * 2006-02-21 2010-06-15 International Business Machines Corporation Method for neutralizing trapped charge in a charge accumulation layer of a semiconductor structure
WO2009027888A2 (en) * 2007-08-24 2009-03-05 Nxp B.V. Solderable structure
JP2009064812A (ja) * 2007-09-04 2009-03-26 Panasonic Corp 半導体装置の電極構造およびその関連技術
US8809182B2 (en) 2008-05-01 2014-08-19 International Business Machines Corporation Pad cushion structure and method of fabrication for Pb-free C4 integrated circuit chip joining
KR101936039B1 (ko) 2012-10-30 2019-01-08 삼성전자 주식회사 반도체 장치
US10163828B2 (en) * 2013-11-18 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and fabricating method thereof
JP6416800B2 (ja) * 2016-01-26 2018-10-31 株式会社東芝 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329423A (en) * 1993-04-13 1994-07-12 Scholz Kenneth D Compressive bump-and-socket interconnection scheme for integrated circuits
WO1994017553A1 (en) * 1993-01-21 1994-08-04 Hughes Aircraft Company Three dimensional integrated circuit and method of fabricating same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110734A (ja) 1986-10-29 1988-05-16 Hitachi Ltd 集積回路素子
JPS63229726A (ja) 1987-03-18 1988-09-26 Nec Corp 混成集積回路装置
JPS63262867A (ja) 1987-04-20 1988-10-31 Nec Corp 半導体記憶装置
US5024965A (en) 1990-02-16 1991-06-18 Chang Chen Chi P Manufacturing high speed low leakage radiation hardened CMOS/SOI devices
JPH03272176A (ja) 1990-03-22 1991-12-03 Fujitsu Ltd 半導体装置と基板と基板製造方法
KR100292330B1 (ko) * 1992-05-01 2001-09-17 이데이 노부유끼 반도체장치와그제조방법및실리콘절연기판의제조방법
JP2924506B2 (ja) * 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
JP3321899B2 (ja) * 1992-12-04 2002-09-09 株式会社デンソー 半導体装置
JP3269536B2 (ja) 1993-02-19 2002-03-25 株式会社デンソー 半導体装置
US5492863A (en) * 1994-10-19 1996-02-20 Motorola, Inc. Method for forming conductive bumps on a semiconductor device
JPH08139296A (ja) 1994-11-08 1996-05-31 Hitachi Ltd 半導体基板およびそれを用いた半導体集積回路装置
JP3272176B2 (ja) 1994-12-20 2002-04-08 東芝テック株式会社 商品販売登録データ処理装置
JP3296400B2 (ja) * 1995-02-01 2002-06-24 東芝マイクロエレクトロニクス株式会社 半導体装置、その製造方法およびＣｕ製リード
JPH0951083A (ja) 1995-08-10 1997-02-18 Mitsubishi Electric Corp ゲートアレイ型半導体集積回路装置及びその製造方法
US5670812A (en) * 1995-09-29 1997-09-23 International Business Machines Corporation Field effect transistor having contact layer of transistor gate electrode material
JP2748955B2 (ja) 1996-03-21 1998-05-13 株式会社日立製作所 半導体装置
JP2861965B2 (ja) * 1996-09-20 1999-02-24 日本電気株式会社 突起電極の形成方法
US5956605A (en) * 1996-09-20 1999-09-21 Micron Technology, Inc. Use of nitrides for flip-chip encapsulation
JPH10294318A (ja) * 1997-04-18 1998-11-04 Toshiba Corp 電子部品
JP3641111B2 (ja) * 1997-08-28 2005-04-20 株式会社ルネサステクノロジ 半導体装置の製造方法
TW434646B (en) * 1997-11-21 2001-05-16 Rohm Co Ltd Semiconductor device and method for making the same
JPH11243208A (ja) * 1998-02-26 1999-09-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3546783B2 (ja) * 1999-06-09 2004-07-28 セイコーエプソン株式会社 半導体記憶装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994017553A1 (en) * 1993-01-21 1994-08-04 Hughes Aircraft Company Three dimensional integrated circuit and method of fabricating same
US5329423A (en) * 1993-04-13 1994-07-12 Scholz Kenneth D Compressive bump-and-socket interconnection scheme for integrated circuits

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Flip Chip Technologies, J.H. Lau, 26-28, McGraw Hill, 1998 *

Also Published As

Publication number Publication date
FR2775387A1 (fr) 1999-08-27
KR100377893B1 (ko) 2003-03-29
DE19842441A1 (de) 1999-09-09
US6459125B2 (en) 2002-10-01
US20020110954A1 (en) 2002-08-15
FR2775387B1 (fr) 2002-09-06
US20020003259A1 (en) 2002-01-10
KR19990071421A (ko) 1999-09-27
KR20010072669A (ko) 2001-07-31
TW382817B (en) 2000-02-21
JPH11243208A (ja) 1999-09-07

Similar Documents

Publication Publication Date Title
DE19842441B4 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE4019848C2 (de) Halbleitereinrichtung mit einer allseitig isolierten Unterstützungsschicht unterhalb eines Kontaktgebietes und Herstellungsverfahren für eine solche Halbleitereinrichtung
DE102004012845B4 (de) Verfahren zur Herstellung einer Halbleitervorrichtung, Halbleitervorrichtung, Schaltungssubstrat und elektronischer Apparat
DE102004034397B4 (de) Bildsensormodul mit einem Waferebenenpaket
DE69635397T2 (de) Halbleitervorrichtung mit Chipabmessungen und Herstellungsverfahren
DE102009035437B4 (de) Halbleiterbauelement mit einem Verspannungspuffermaterial, das über einem Metallisierungssystem mit kleinem ε gebildet ist
DE10337569B4 (de) Integrierte Anschlussanordnung und Herstellungsverfahren
DE10250636B4 (de) Verfahren zum Herstellen einer Halbleiterstuktur und Halbleiterstruktur
DE69033229T2 (de) Anschlussfläche für Halbleiteranordnung
DE3331624C2 (de) Halbleiteranordnung mit Schutzmetalleinrichtung
DE3134343A1 (de) Halbleiteranordnung
DE19907525A1 (de) Packung für einen integrierten Schaltkreis und Verfahren zum Herstellen eines Halbleiters
DE4323799A1 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE102012219330A1 (de) Halbleitervorrichtung und Verfahren zum Bilden von Höckerstrukturen mit einer Schutzschicht
DE102006056066A1 (de) Halbleiterbauelement mit Justiermarkierungsschicht und Herstellungsverfahren
DE10125035A1 (de) Halbleiterbauteil
DE69415927T2 (de) Verfahren zur Herstellung eines Halbleiterbauelements mit einer Höckerelectrode
DE102007057689A1 (de) Halbleiterbauelement mit einem Chipgebiet, das für eine aluminiumfreie Lothöckerverbindung gestaltet ist, und eine Teststruktur, die für eine aluminiumfreie Drahtverbindung gestaltet ist
DE10308275A1 (de) Strahlungsresistentes Halbleiterbauteil
DE102006001600B3 (de) Halbleiterbauelement mit Flipchipkontakten und Verfahren zur Herstellung desselben
DE10357919A1 (de) Abbildungs-Anordnung und Verfahren zu deren Herstellung
DE19901384A1 (de) Elektronisches Bauelement und Verwendung einer darin enthaltenen Schutzstruktur
DE102017200167A1 (de) Halbleitervorrichtung und Verfahren der Fertigung derselben
DE10056869B4 (de) Halbleiterbauteil mit einer strahlungsabsorbierenden leitenden Schutzschicht und Verfahren zur Herstellung derselben
DE60121137T2 (de) Passivierungsschicht auf einer Halbleitervorrichtung mit einer ferroelektrischen Schicht

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee