DE1805826C3 - Verfahren zum Hersteilen von planaren Halbleiterbauelementen - Google Patents

Verfahren zum Hersteilen von planaren Halbleiterbauelementen

Info

Publication number
DE1805826C3
DE1805826C3 DE1805826A DE1805826A DE1805826C3 DE 1805826 C3 DE1805826 C3 DE 1805826C3 DE 1805826 A DE1805826 A DE 1805826A DE 1805826 A DE1805826 A DE 1805826A DE 1805826 C3 DE1805826 C3 DE 1805826C3
Authority
DE
Germany
Prior art keywords
zones
zone
ring
diffusion
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1805826A
Other languages
German (de)
English (en)
Other versions
DE1805826A1 (de
DE1805826B2 (de
Inventor
Cornelis Albertus Bosselaar
Rijkent Jan Nienhuis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1805826A1 publication Critical patent/DE1805826A1/de
Publication of DE1805826B2 publication Critical patent/DE1805826B2/de
Application granted granted Critical
Publication of DE1805826C3 publication Critical patent/DE1805826C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/028—Dicing

Landscapes

  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Dicing (AREA)
  • Electrodes Of Semiconductors (AREA)
DE1805826A 1967-11-04 1968-10-29 Verfahren zum Hersteilen von planaren Halbleiterbauelementen Expired DE1805826C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL676715014A NL154061B (nl) 1967-11-04 1967-11-04 Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
NL6715013A NL6715013A (enExample) 1967-11-04 1967-11-04

Publications (3)

Publication Number Publication Date
DE1805826A1 DE1805826A1 (de) 1969-06-26
DE1805826B2 DE1805826B2 (de) 1976-04-22
DE1805826C3 true DE1805826C3 (de) 1978-06-01

Family

ID=26644261

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1805826A Expired DE1805826C3 (de) 1967-11-04 1968-10-29 Verfahren zum Hersteilen von planaren Halbleiterbauelementen

Country Status (11)

Country Link
US (2) US3839103A (enExample)
JP (1) JPS5013633B1 (enExample)
AT (1) AT281122B (enExample)
BE (1) BE723340A (enExample)
CH (1) CH483725A (enExample)
DE (1) DE1805826C3 (enExample)
ES (1) ES359847A1 (enExample)
FR (1) FR1592176A (enExample)
GB (1) GB1243355A (enExample)
NL (2) NL154061B (enExample)
SE (1) SE354380B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4819113B1 (enExample) * 1969-08-27 1973-06-11
JPS573225B2 (enExample) * 1974-08-19 1982-01-20
JPS5261333U (enExample) * 1975-10-31 1977-05-06
CH594989A5 (enExample) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
US4076558A (en) * 1977-01-31 1978-02-28 International Business Machines Corporation Method of high current ion implantation and charge reduction by simultaneous kerf implant
US4665420A (en) * 1984-11-08 1987-05-12 Rca Corporation Edge passivated charge-coupled device image sensor
US4835592A (en) * 1986-03-05 1989-05-30 Ixys Corporation Semiconductor wafer with dice having briding metal structure and method of manufacturing same
JP2578600B2 (ja) * 1987-04-28 1997-02-05 オリンパス光学工業株式会社 半導体装置
US5237197A (en) * 1989-06-26 1993-08-17 University Of Hawaii Integrated VLSI radiation/particle detector with biased pin diodes
EP0429697B1 (de) * 1989-11-28 1997-03-05 Siemens Aktiengesellschaft Halbleiterscheibe mit dotiertem Ritzrahmen
EP0462315B1 (en) * 1990-06-21 1994-06-01 Mu-Long Chiang A corner protective means for walls, beams, columns etc.
FR2694410B1 (fr) * 1992-07-30 1994-10-28 Sgs Thomson Microelectronics Procédé de test de la résistance par carré de couches diffusées.
DE19539527C2 (de) * 1995-10-24 2001-02-22 August Braun Winkelleiste mit Armierungsmaterial für den Putz auf einer Wärmedämmung
CN117276353A (zh) 2017-06-27 2023-12-22 株式会社半导体能源研究所 半导体装置、半导体晶片、存储装置及电子设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (enExample) * 1961-09-08
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
NL294370A (enExample) * 1963-06-20
GB993388A (en) * 1964-02-05 1965-05-26 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3395320A (en) * 1965-08-25 1968-07-30 Bell Telephone Labor Inc Isolation technique for integrated circuit structure

Also Published As

Publication number Publication date
US3839103A (en) 1974-10-01
DE1805826A1 (de) 1969-06-26
CH483725A (de) 1969-12-31
NL6715014A (enExample) 1969-05-06
SE354380B (enExample) 1973-03-05
ES359847A1 (es) 1970-10-01
GB1243355A (en) 1971-08-18
NL6715013A (enExample) 1969-05-06
NL154061B (nl) 1977-07-15
FR1592176A (enExample) 1970-05-11
AT281122B (de) 1970-05-11
US3772576A (en) 1973-11-13
JPS5013633B1 (enExample) 1975-05-21
BE723340A (enExample) 1969-05-05
DE1805826B2 (de) 1976-04-22

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee