DE68922641T2 - Verfahren zur Herstellung eines N-Kanal-Transistors für Hochspannung, insbesondere für EEPROM-Speicher mit CMOS-Technologie. - Google Patents
Verfahren zur Herstellung eines N-Kanal-Transistors für Hochspannung, insbesondere für EEPROM-Speicher mit CMOS-Technologie.Info
- Publication number
- DE68922641T2 DE68922641T2 DE68922641T DE68922641T DE68922641T2 DE 68922641 T2 DE68922641 T2 DE 68922641T2 DE 68922641 T DE68922641 T DE 68922641T DE 68922641 T DE68922641 T DE 68922641T DE 68922641 T2 DE68922641 T2 DE 68922641T2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- high voltage
- channel transistor
- cmos technology
- eeprom memories
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000015654 memory Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8819580A IT1216476B (it) | 1988-02-29 | 1988-02-29 | Processo per l'ottenimento di transitori a canale n per alta tensione, particolarmente per memorie eeprom con tecnologia cmos. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68922641D1 DE68922641D1 (de) | 1995-06-22 |
DE68922641T2 true DE68922641T2 (de) | 1996-02-08 |
Family
ID=11159211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68922641T Expired - Fee Related DE68922641T2 (de) | 1988-02-29 | 1989-02-13 | Verfahren zur Herstellung eines N-Kanal-Transistors für Hochspannung, insbesondere für EEPROM-Speicher mit CMOS-Technologie. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0331223B1 (de) |
JP (1) | JP2554929B2 (de) |
DE (1) | DE68922641T2 (de) |
IT (1) | IT1216476B (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995022174A1 (en) * | 1994-02-15 | 1995-08-17 | National Semiconductor Corporation | High-voltage cmos transistors for a standard cmos process |
JP2007218716A (ja) * | 2006-02-16 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 細胞電気生理センサ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947757A (ja) * | 1982-09-10 | 1984-03-17 | Hitachi Ltd | 半導体集積回路装置とその製造法 |
KR910006249B1 (ko) * | 1983-04-01 | 1991-08-17 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 장치 |
US4577391A (en) * | 1984-07-27 | 1986-03-25 | Monolithic Memories, Inc. | Method of manufacturing CMOS devices |
DE3583472D1 (de) * | 1984-08-28 | 1991-08-22 | Toshiba Kawasaki Kk | Verfahren zum herstellen einer halbleiteranordnung mit gateelektrode. |
JPS61171165A (ja) * | 1985-01-25 | 1986-08-01 | Nissan Motor Co Ltd | Mosトランジスタ |
-
1988
- 1988-02-29 IT IT8819580A patent/IT1216476B/it active
-
1989
- 1989-02-13 EP EP89200327A patent/EP0331223B1/de not_active Expired - Lifetime
- 1989-02-13 DE DE68922641T patent/DE68922641T2/de not_active Expired - Fee Related
- 1989-02-22 JP JP1040447A patent/JP2554929B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH027560A (ja) | 1990-01-11 |
IT8819580A0 (it) | 1988-02-29 |
EP0331223A2 (de) | 1989-09-06 |
EP0331223A3 (de) | 1991-01-16 |
DE68922641D1 (de) | 1995-06-22 |
IT1216476B (it) | 1990-03-08 |
JP2554929B2 (ja) | 1996-11-20 |
EP0331223B1 (de) | 1995-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |