DE1444508A1 - Verfahren zum epitaktischen Aufwachsen eines Filmes - Google Patents

Verfahren zum epitaktischen Aufwachsen eines Filmes

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Publication number
DE1444508A1
DE1444508A1 DE19621444508 DE1444508A DE1444508A1 DE 1444508 A1 DE1444508 A1 DE 1444508A1 DE 19621444508 DE19621444508 DE 19621444508 DE 1444508 A DE1444508 A DE 1444508A DE 1444508 A1 DE1444508 A1 DE 1444508A1
Authority
DE
Germany
Prior art keywords
compounds
group
iii
elements
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19621444508
Other languages
English (en)
Inventor
Ruehrwein Robert Arthur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US821101A external-priority patent/US3363984A/en
Priority claimed from US113108A external-priority patent/US3312570A/en
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of DE1444508A1 publication Critical patent/DE1444508A1/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G31/00—Compounds of vanadium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02521—Materials
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    • H01L21/02546—Arsenides
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description

  •
    horizontaler und vertikaler Rohre kommen ebenfalls in Betracht und auch Kreislaufsysteme, in denen das abfließende Gas nach Abscheidung des Einkristallproduktes in das System zurückgeführt wird, sind geeignet, insbesondere bei Einrichtungen größeren Maßstabs.
  • Ein Vorteil des Verfahrens gemäß der Erfindung für die Herstellung von epitaxialen Filmen aus IIIb-Vb-Verbindungen durch Dampfphasenreaktion einer IIIb-Verbindung mit einem Element oder einer Verbindung der Vb-Gruppe in Gegenwart von Wasserstoff ist die Leichtigkeit und Einfachheit der Erzielung von Produkten hoher Reinheit. Im Gegenratz zu diesem Verfahren erforderte die herkömmliche Methode. zur Herstellung von III-V-Verbindungen, die von den entsprechenden Elementen der Gruppen III und V ausgeht, eine umständ-
    In dem auf 1000°C erhitzten Reaktionsrohr vereinigt sich und reagiert die verdampfte Galliumchlorid/Indiumchlorid-Mischung mit dem verdampften Phosphor und Tellur unter Bildung eines gemischten binären Galliumindiumphosphid-Kristalls, der sich aus der Dampfphase in einkristallischer Form als ein epitaxialer Film auf dem p-Typ Galliumphosphid-Impfkristall abscheidet. Röntgenstrahlenbeugungsbilder zeigen, daß die gemischte Kristallschicht vom n-Typ die gleiche Kristallorientieung wie der Impfkristall, Charakteristik der epitaxialen Schichten hat; bei der Analyse wird die Formel Ga. ,?1 In0, 29P gefunden. Beispiel 8

Claims (1)

  1. Patentansprüche 1. Verfahren zum epitaktischen Aufwachsen eines Filmes aus III-V-Verbindungen oder Mischungen solcher Verbindungen auf einem einkristallinen Substrat, dadurch gekennzeichnet, daß man in der Dampfphase (a) Wasserstoff und (b) wenigstens eine flüchtige Verbindung von Bor, Aluminium, Gallium oder Indium und (c) wenigstens eines der Elemente Stickstoff, Phosphor oder Arsen oder wenigstens eine flüchtige Verbindung der Elemente Stickstoff, Phosphor, Arsen oder Antimon umsetzt, wobei die Komponente (a) und die Komponente (b) als unabhängige Reaktionsteilnehmer zugeführt werden, und daß man die erhaltene Reaktionsmischung mit dem Substrat in Berührung bringt, um darauf einen epitaktischen Film der genannten III-V-Verbindung oder einer Mischung von derartigen Verbindungen abzuscheidena .
    vom n-Typ auf dem Substrat mit Leitfähigkeit vom p-Typ abscheidet und dadurch eine np-Junktion bildet. 10. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß man zum epitaktischen Aufwachsen eines Filmes aus gemischten binären Kristallen aus Elementen der Gruppe III und der Gruppe V auf einem Substrat in der Dampfphase in Gegenwart von Wasserstoff mindestens eine flüchtige Verbindungvon Elementen der Gruppe III mit 1) mindestens einem Element der Gruppe V oder 2) mindestens einer flüchtigen Verbindung von Elementen der Gruppe V vereinigt, die sich ergebende Reaktionsmischung mit einem Substratmaterial aus der von III-V-Verbindungen, I-VII-Verbindungen, II-VI-Verbindungen, Germanium und Silicium gebildeten Klasse in Berührung bringt, mit der Maßgabe, daß die Summe der zur Umsetzung gelangenden Verbindungen der Gruppe III und der Gruppe-V
DE19621444508 1959-06-18 1962-05-29 Verfahren zum epitaktischen Aufwachsen eines Filmes Pending DE1444508A1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US821101A US3363984A (en) 1959-06-18 1959-06-18 Preparation of iii-v compounds
US129919A US3364084A (en) 1959-06-18 1961-05-29 Production of epitaxial films
US113108A US3312570A (en) 1961-05-29 1961-05-29 Production of epitaxial films of semiconductor compound material
US128237A US3322575A (en) 1959-06-18 1961-07-31 Graded energy gap photoelectromagnetic cell
US434116A US3224913A (en) 1959-06-18 1965-02-19 Altering proportions in vapor deposition process to form a mixed crystal graded energy gap

Publications (1)

Publication Number Publication Date
DE1444508A1 true DE1444508A1 (de) 1970-02-19

Family

ID=27537343

Family Applications (3)

Application Number Title Priority Date Filing Date
DEM45650A Pending DE1132098B (de) 1959-06-18 1960-06-15 Verfahren zur Herstellung von Phosphiden oder Arseniden der Elemente Bor, Aluminium,Gallium, Indium aus der ó¾. Gruppe des Periodischen Systems
DE19621444508 Pending DE1444508A1 (de) 1959-06-18 1962-05-29 Verfahren zum epitaktischen Aufwachsen eines Filmes
DE19621444511 Pending DE1444511A1 (de) 1959-06-18 1962-07-30 Verfahren zur Herstellung von epitaxialen Filmen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DEM45650A Pending DE1132098B (de) 1959-06-18 1960-06-15 Verfahren zur Herstellung von Phosphiden oder Arseniden der Elemente Bor, Aluminium,Gallium, Indium aus der ó¾. Gruppe des Periodischen Systems

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19621444511 Pending DE1444511A1 (de) 1959-06-18 1962-07-30 Verfahren zur Herstellung von epitaxialen Filmen

Country Status (5)

Country Link
US (3) US3364084A (de)
BE (2) BE620887A (de)
DE (3) DE1132098B (de)
GB (3) GB944872A (de)
NL (4) NL281602A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3635279A1 (de) * 1985-10-16 1987-05-07 Japan Res Dev Corp Gasphasen-epitaxieverfahren fuer einen verbindungs-halbleiter-einkristall und einrichtung zur durchfuehrung des verfahrens

Families Citing this family (78)

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Publication number Priority date Publication date Assignee Title
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
US3306713A (en) * 1962-09-18 1967-02-28 Merck & Co Inc Semiconductor process and products produced thereby
DE1467360B2 (de) * 1962-12-01 1971-08-12 Siemens AG, 1000 Berlin u 8000 München Verfahren zum herstellen einkristalliner schichten aus indiumantimonid
US3310425A (en) * 1963-06-28 1967-03-21 Rca Corp Method of depositing epitaxial layers of gallium arsenide
US3392066A (en) * 1963-12-23 1968-07-09 Ibm Method of vapor growing a homogeneous monocrystal
US3363155A (en) * 1964-08-19 1968-01-09 Philips Corp Opto-electronic transistor with a base-collector junction spaced from the material heterojunction
US3394390A (en) * 1965-03-31 1968-07-23 Texas Instruments Inc Method for making compond semiconductor materials
DE1544265A1 (de) * 1965-07-05 1970-07-09 Siemens Ag Verfahren zum Herstellen von epitaktischen Aufwachsschichten aus binaeren,halbleitenden Verbindungen
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3493811A (en) * 1966-06-22 1970-02-03 Hewlett Packard Co Epitaxial semiconductor material on dissimilar substrate and method for producing the same
US3433684A (en) * 1966-09-13 1969-03-18 North American Rockwell Multilayer semiconductor heteroepitaxial structure
US3496029A (en) * 1966-10-12 1970-02-17 Ion Physics Corp Process of doping semiconductor with analyzing magnet
NL6615059A (de) * 1966-10-25 1968-04-26
US3441453A (en) * 1966-12-21 1969-04-29 Texas Instruments Inc Method for making graded composition mixed compound semiconductor materials
US4404265A (en) * 1969-10-01 1983-09-13 Rockwell International Corporation Epitaxial composite and method of making
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US3224913A (en) 1965-12-21
GB1011979A (en) 1965-12-01
NL129707C (de)
US3364084A (en) 1968-01-16
BE618264A (de)
NL279070A (de)
GB1015708A (en) 1966-01-05
DE1444511A1 (de) 1970-12-17
BE620887A (de)
GB944872A (en) 1963-12-18
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DE1132098B (de) 1962-06-28
US3322575A (en) 1967-05-30

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