DE112020002054T5 - Integrierte komponente, einen kondensator und einen eigenständigen varistor aufweisend - Google Patents

Integrierte komponente, einen kondensator und einen eigenständigen varistor aufweisend Download PDF

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Publication number
DE112020002054T5
DE112020002054T5 DE112020002054.1T DE112020002054T DE112020002054T5 DE 112020002054 T5 DE112020002054 T5 DE 112020002054T5 DE 112020002054 T DE112020002054 T DE 112020002054T DE 112020002054 T5 DE112020002054 T5 DE 112020002054T5
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DE
Germany
Prior art keywords
termination
electrode layers
integrated component
varistor
ground
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112020002054.1T
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German (de)
English (en)
Inventor
Michael W. Kirk
Marianne Berolini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera AVX Components Corp
Original Assignee
AVX Corp
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Filing date
Publication date
Application filed by AVX Corp filed Critical AVX Corp
Publication of DE112020002054T5 publication Critical patent/DE112020002054T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1006—Thick film varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors; Arresters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/35—Feed-through capacitors or anti-noise capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H01G4/385—Single unit multiple capacitors, e.g. dual capacitor in one coil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Thermistors And Varistors (AREA)
  • Ceramic Capacitors (AREA)
DE112020002054.1T 2019-04-25 2020-04-17 Integrierte komponente, einen kondensator und einen eigenständigen varistor aufweisend Pending DE112020002054T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962838410P 2019-04-25 2019-04-25
US62/838,410 2019-04-25
PCT/US2020/028740 WO2020219357A1 (en) 2019-04-25 2020-04-17 Integrated component including a capacitor and discrete varistor

Publications (1)

Publication Number Publication Date
DE112020002054T5 true DE112020002054T5 (de) 2022-01-27

Family

ID=72917269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020002054.1T Pending DE112020002054T5 (de) 2019-04-25 2020-04-17 Integrierte komponente, einen kondensator und einen eigenständigen varistor aufweisend

Country Status (7)

Country Link
US (1) US12148575B2 (https=)
JP (2) JP2022541088A (https=)
KR (2) KR20260003406A (https=)
CN (3) CN117790188A (https=)
DE (1) DE112020002054T5 (https=)
TW (1) TW202109578A (https=)
WO (1) WO2020219357A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115516580B (zh) * 2020-05-21 2024-09-13 松下知识产权经营株式会社 层叠可变电阻
WO2022178763A1 (en) * 2021-02-25 2022-09-01 Dongguan Littelfuse Electronics Company Limited Surface mount metal oxide varistor device
CN117321713A (zh) * 2021-04-07 2023-12-29 基美电子公司 二次注塑薄膜电容器
US11348710B1 (en) 2021-05-12 2022-05-31 Dongguan Littelfuse Electronics Company Limited Surface mount metal oxide varistor device
JP2023110992A (ja) * 2022-01-31 2023-08-10 太陽誘電株式会社 積層セラミックコンデンサ及び回路基板
JP2024052016A (ja) * 2022-09-30 2024-04-11 Tdk株式会社 電子部品

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834751Y2 (ja) * 1979-10-09 1983-08-04 松下電器産業株式会社 サ−ジ吸収器
JPS5678443U (https=) * 1979-11-15 1981-06-25
JPS5678443A (en) 1979-11-27 1981-06-27 Asahi Glass Co Ltd Production of glass fiber and device therefor
JPS619804U (ja) 1984-06-22 1986-01-21 株式会社村田製作所 ノイズ吸収用バリスタ
US4811164A (en) * 1988-03-28 1989-03-07 American Telephone And Telegraph Company, At&T Bell Laboratories Monolithic capacitor-varistor
US4853826A (en) 1988-08-01 1989-08-01 Rogers Corporation Low inductance decoupling capacitor
JPH02137212A (ja) * 1988-11-17 1990-05-25 Murata Mfg Co Ltd 複合電子部品
JPH02240907A (ja) 1989-03-15 1990-09-25 Nitsuko Corp メタライズドフィルムコンデンサのリード線引出し方法
JPH02304910A (ja) 1989-05-19 1990-12-18 Tama Electric Co Ltd 複合チップ素子
JPH03187203A (ja) 1989-12-07 1991-08-15 Siemens Ag 高容量バリスタ
JPH03206606A (ja) 1990-01-09 1991-09-10 Murata Mfg Co Ltd 積層コンデンサ
JP2767014B2 (ja) * 1992-04-22 1998-06-18 株式会社村田製作所 ノイズフィルタ
JPH0653075A (ja) 1992-07-27 1994-02-25 Mitsubishi Materials Corp 平衡線路用積層セラミックコンデンサ
JPH07249541A (ja) 1994-03-11 1995-09-26 Mitsubishi Materials Corp 複合セラミックコンデンサ
US5815367A (en) * 1996-03-11 1998-09-29 Murata Manufacturing Co., Ltd. Layered capacitors having an internal inductor element
JP3631341B2 (ja) * 1996-10-18 2005-03-23 Ｔｄｋ株式会社 積層型複合機能素子およびその製造方法
JP2874695B1 (ja) 1998-01-09 1999-03-24 株式会社村田製作所 積層型電子部品アレイ
WO2000055875A1 (en) 1999-03-16 2000-09-21 Maxwell Energy Products Low inductance four terminal capacitor lead frame
JP2000353636A (ja) * 1999-04-06 2000-12-19 Matsushita Electric Ind Co Ltd 積層セラミック部品
JP2000299249A (ja) 1999-04-14 2000-10-24 Maruwa Kck:Kk 積層コンデンサおよびその製造方法
JP2001189233A (ja) 1999-12-28 2001-07-10 Murata Mfg Co Ltd 積層コンデンサ
JP2002064303A (ja) 2000-08-22 2002-02-28 Taiyo Yuden Co Ltd 積層型誘電体フィルタ及び積層型誘電体フィルタアレイ
JP2003188039A (ja) 2001-12-20 2003-07-04 Murata Mfg Co Ltd 積層型電子部品
US7463474B2 (en) * 2002-04-15 2008-12-09 Avx Corporation System and method of plating ball grid array and isolation features for electronic components
US7365428B2 (en) * 2004-10-22 2008-04-29 Intel Corporation Array capacitor with resistive structure
KR100733816B1 (ko) * 2005-10-28 2007-07-02 주식회사 아모텍 적층형 칩소자
JP2007243040A (ja) * 2006-03-10 2007-09-20 Tdk Corp 積層セラミック電子部品
JP2008021850A (ja) 2006-07-13 2008-01-31 Murata Mfg Co Ltd 積層コンデンサ
JP2008100856A (ja) 2006-10-17 2008-05-01 Koa Corp 酸化亜鉛積層チップバリスタの製造方法
US20080165468A1 (en) * 2007-01-05 2008-07-10 Avx Corporation Very low profile multilayer components
US7388738B1 (en) * 2007-03-28 2008-06-17 Tdk Corporation Multilayer capacitor
US20090147440A1 (en) * 2007-12-11 2009-06-11 Avx Corporation Low inductance, high rating capacitor devices
JP5301853B2 (ja) 2008-02-22 2013-09-25 コーア株式会社 酸化亜鉛チップバリスタ
JP2009222663A (ja) 2008-03-18 2009-10-01 Nec Saitama Ltd サージ電流検出方法及び避雷器
JP4957709B2 (ja) 2008-11-26 2012-06-20 株式会社村田製作所 積層コンデンサ
KR101018646B1 (ko) 2008-12-09 2011-03-03 삼화콘덴서공업주식회사 Ｍｌｃｃ 모듈
AU2010100764A4 (en) * 2009-07-23 2010-09-23 Pakton Developments Pty Ltd A safety device for electric fences
JP5628494B2 (ja) 2009-08-11 2014-11-19 デクセリアルズ株式会社 共振回路
US8264816B2 (en) * 2009-08-24 2012-09-11 Kemet Electronics Corporation Externally fused and resistively loaded safety capacitor
US9450556B2 (en) * 2009-10-16 2016-09-20 Avx Corporation Thin film surface mount components
JP5062237B2 (ja) * 2009-11-05 2012-10-31 Ｔｄｋ株式会社 積層コンデンサ、その実装構造、及びその製造方法
CN202008926U (zh) * 2010-11-30 2011-10-12 华新科技股份有限公司 浮动式电极积层陶瓷电容器
JP5974490B2 (ja) * 2011-01-17 2016-08-23 株式会社村田製作所 電子部品素子供給装置
US9171672B2 (en) 2011-06-27 2015-10-27 Kemet Electronics Corporation Stacked leaded array
US8885324B2 (en) 2011-07-08 2014-11-11 Kemet Electronics Corporation Overvoltage protection component
KR101771728B1 (ko) * 2012-07-20 2017-08-25 삼성전기주식회사 적층 세라믹 전자부품 및 이의 제조방법
JP5708586B2 (ja) * 2012-07-26 2015-04-30 株式会社村田製作所 積層セラミック電子部品およびその製造方法
KR101504015B1 (ko) * 2013-07-09 2015-03-18 삼성전기주식회사 적층 세라믹 커패시터 및 그 실장 기판
EP2947757A1 (en) * 2014-05-21 2015-11-25 Keko-Varicon d.o.o. Electronic component with stacked elements
JP6459717B2 (ja) * 2015-03-31 2019-01-30 Tdk株式会社 積層セラミックコンデンサ
JP2017117865A (ja) 2015-12-22 2017-06-29 株式会社村田製作所 コンデンサ及びコンデンサ内蔵基板
WO2018043397A1 (ja) 2016-08-29 2018-03-08 京セラ株式会社 積層型コンデンサ
US10607777B2 (en) 2017-02-06 2020-03-31 Avx Corporation Integrated capacitor filter and integrated capacitor filter with varistor function
WO2018182249A1 (ko) * 2017-03-29 2018-10-04 주식회사 아모텍 감전보호소자, 그 제조 방법 및 이를 구비한 휴대용 전자장치
KR102136150B1 (ko) 2017-05-02 2020-07-21 주식회사 아모텍 복합형 감전방지소자 및 이를 구비한 휴대용 전자장치
JP2018206813A (ja) 2017-05-30 2018-12-27 株式会社村田製作所 積層セラミック電子部品
US20180374646A1 (en) 2017-06-26 2018-12-27 Vishay Israel Ltd. Wideband coupling capacitor
KR102437806B1 (ko) * 2017-07-25 2022-08-30 삼성전기주식회사 복합 전자 부품 및 그 실장 기판
US10912562B2 (en) * 2017-08-14 2021-02-09 Standard Bariatrics, Inc. End effectors, surgical stapling devices, and methods of using same
US10681814B2 (en) * 2017-09-08 2020-06-09 Kemet Electronics Corporation High density multi-component packages
JP6847895B2 (ja) * 2018-07-24 2021-03-24 太陽誘電株式会社 積層セラミックコンデンサ
US11621129B2 (en) 2019-04-25 2023-04-04 KYOCERA AVX Components Corporation Low inductance component

Also Published As

Publication number Publication date
US20200343051A1 (en) 2020-10-29
JP2022541088A (ja) 2022-09-22
CN113728407A (zh) 2021-11-30
JP2024138420A (ja) 2024-10-08
CN119361324A (zh) 2025-01-24
KR20260003406A (ko) 2026-01-06
KR20210146452A (ko) 2021-12-03
WO2020219357A1 (en) 2020-10-29
KR102902461B1 (ko) 2025-12-19
TW202109578A (zh) 2021-03-01
CN117790188A (zh) 2024-03-29
US12148575B2 (en) 2024-11-19

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Owner name: KYOCERA AVX COMPONENTS CORPORATION (N. D. GES., US

Free format text: FORMER OWNER: AVX CORPORATION, FOUNTAIN INN, SC, US