DE112015004795T5 - Siliziumkarbidsubstrat und Verfahren zur Herstellung desselben - Google Patents

Siliziumkarbidsubstrat und Verfahren zur Herstellung desselben Download PDF

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Publication number
DE112015004795T5
DE112015004795T5 DE112015004795.6T DE112015004795T DE112015004795T5 DE 112015004795 T5 DE112015004795 T5 DE 112015004795T5 DE 112015004795 T DE112015004795 T DE 112015004795T DE 112015004795 T5 DE112015004795 T5 DE 112015004795T5
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DE
Germany
Prior art keywords
silicon carbide
carbide substrate
hydrogen peroxide
peroxide water
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112015004795.6T
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German (de)
English (en)
Inventor
Kyoko Okita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE112015004795T5 publication Critical patent/DE112015004795T5/de
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
DE112015004795.6T 2014-10-23 2015-08-31 Siliziumkarbidsubstrat und Verfahren zur Herstellung desselben Ceased DE112015004795T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014216483 2014-10-23
JP2014-216483 2014-10-23
PCT/JP2015/074741 WO2016063632A1 (ja) 2014-10-23 2015-08-31 炭化珪素基板およびその製造方法

Publications (1)

Publication Number Publication Date
DE112015004795T5 true DE112015004795T5 (de) 2017-10-12

Family

ID=55760678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112015004795.6T Ceased DE112015004795T5 (de) 2014-10-23 2015-08-31 Siliziumkarbidsubstrat und Verfahren zur Herstellung desselben

Country Status (5)

Country Link
US (2) US10113249B2 (https=)
JP (4) JP5924462B1 (https=)
CN (2) CN112531019B (https=)
DE (1) DE112015004795T5 (https=)
WO (1) WO2016063632A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3666937A4 (en) * 2018-10-16 2020-07-22 Sicc Co., Ltd. HIGH FLATNESS, LOW DAMAGE, LARGE DIAMETER MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING

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* Cited by examiner, † Cited by third party
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WO2016125404A1 (ja) * 2015-02-02 2016-08-11 富士電機株式会社 炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置
WO2019065994A1 (ja) * 2017-09-29 2019-04-04 株式会社フジミインコーポレーテッド 研磨用組成物
CN109321980B (zh) * 2018-10-16 2019-11-19 山东天岳先进材料科技有限公司 一种高平整度、低损伤大直径单晶碳化硅衬底
CN109571154A (zh) * 2018-12-28 2019-04-05 天津洙诺科技有限公司 一种4h碳化硅晶片的抛光方法
WO2020235205A1 (ja) * 2019-05-17 2020-11-26 住友電気工業株式会社 炭化珪素基板
JPWO2020235225A1 (https=) * 2019-05-17 2020-11-26
JP7622645B2 (ja) * 2019-12-02 2025-01-28 住友電気工業株式会社 炭化珪素基板および炭化珪素基板の製造方法
KR102340307B1 (ko) * 2020-04-09 2021-12-15 포항공과대학교 산학협력단 4H-SiC 기판에 옴 접촉을 형성하는 반도체 및 그것의 제조 방법
KR102236398B1 (ko) * 2020-09-22 2021-04-02 에스케이씨 주식회사 웨이퍼의 세정방법 및 불순물이 저감된 웨이퍼
CN117855025A (zh) * 2022-09-30 2024-04-09 比亚迪股份有限公司 碳化硅外延片及其制备方法
CN115592555B (zh) * 2022-10-11 2024-12-10 南方科技大学 一种硅基材料的表面修整器及其在修型与抛光中的应用
WO2025249355A1 (ja) * 2024-05-31 2025-12-04 セントラル硝子株式会社 ＳｉＣ単結晶ウエハ、ＳｉＣ単結晶インゴット、ＳｉＣ単結晶ウエハの製造方法、ＳｉＣ単結晶インゴットの製造方法、ＳｉＣ単結晶インゴットの製造装置、及びＳｉＣエピタキシャル成長膜の成膜方法

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JPH11157989A (ja) 1997-11-25 1999-06-15 Toyo Tanso Kk 気相成長用サセプター及びその製造方法
JP2004014536A (ja) 2002-06-03 2004-01-15 Nec Electronics Corp 半導体基板の汚染物除去方法
MXPA05009610A (es) * 2003-03-11 2006-05-31 Primet Prec Materials Inc Fabricacion y uso de material de multicarburo.
KR100612853B1 (ko) * 2004-07-21 2006-08-14 삼성전자주식회사 와이어 형태의 실리사이드를 포함하는 Ｓｉ 계열 물질층및 그 제조방법
US7514323B2 (en) * 2005-11-28 2009-04-07 International Business Machines Corporation Vertical SOI trench SONOS cell
DE102006011312B4 (de) 2006-03-11 2010-04-15 Fachhochschule Hildesheim/Holzminden/Göttingen - Körperschaft des öffentlichen Rechts - Vorrichtung zur Plasmabehandlung unter Atmosphärendruck
JP2008280207A (ja) * 2007-05-10 2008-11-20 Matsushita Electric Ind Co Ltd ＳｉＣ単結晶基板の製造方法
JP4552968B2 (ja) * 2007-05-29 2010-09-29 住友電気工業株式会社 化合物半導体基板の研磨方法、化合物半導体基板、化合物半導体エピ基板の製造方法および化合物半導体エピ基板
JP4887266B2 (ja) * 2007-10-15 2012-02-29 株式会社荏原製作所 平坦化方法
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JP5803786B2 (ja) * 2012-04-02 2015-11-04 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
JP6279476B2 (ja) 2012-09-28 2018-02-14 Hoya株式会社 多層反射膜付き基板の製造方法
JP2014210690A (ja) * 2013-04-22 2014-11-13 住友電気工業株式会社 炭化珪素基板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3666937A4 (en) * 2018-10-16 2020-07-22 Sicc Co., Ltd. HIGH FLATNESS, LOW DAMAGE, LARGE DIAMETER MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING

Also Published As

Publication number Publication date
JP6634942B2 (ja) 2020-01-22
JP2021102550A (ja) 2021-07-15
JP6849049B2 (ja) 2021-03-24
JP2020061562A (ja) 2020-04-16
JP5924462B1 (ja) 2016-05-25
CN112531019A (zh) 2021-03-19
US10704163B2 (en) 2020-07-07
US10113249B2 (en) 2018-10-30
CN106796877B (zh) 2021-03-09
CN112531019B (zh) 2024-10-11
US20170306526A1 (en) 2017-10-26
US20180355513A1 (en) 2018-12-13
JPWO2016063632A1 (ja) 2017-04-27
CN106796877A (zh) 2017-05-31
JP7095765B2 (ja) 2022-07-05
JP2016174162A (ja) 2016-09-29
WO2016063632A1 (ja) 2016-04-28

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