CN112531019B - 碳化硅衬底 - Google Patents

碳化硅衬底 Download PDF

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Publication number
CN112531019B
CN112531019B CN202011131017.2A CN202011131017A CN112531019B CN 112531019 B CN112531019 B CN 112531019B CN 202011131017 A CN202011131017 A CN 202011131017A CN 112531019 B CN112531019 B CN 112531019B
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CN
China
Prior art keywords
silicon carbide
carbide substrate
hydrogen peroxide
cleaning
peroxide water
Prior art date
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Active
Application number
CN202011131017.2A
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English (en)
Chinese (zh)
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CN112531019A (zh
Inventor
冲田恭子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to CN202011131017.2A priority Critical patent/CN112531019B/zh
Publication of CN112531019A publication Critical patent/CN112531019A/zh
Application granted granted Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
CN202011131017.2A 2014-10-23 2015-08-31 碳化硅衬底 Active CN112531019B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011131017.2A CN112531019B (zh) 2014-10-23 2015-08-31 碳化硅衬底

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014216483 2014-10-23
JP2014-216483 2014-10-23
CN202011131017.2A CN112531019B (zh) 2014-10-23 2015-08-31 碳化硅衬底
CN201580055161.3A CN106796877B (zh) 2014-10-23 2015-08-31 碳化硅衬底和用于制造所述碳化硅衬底的方法
PCT/JP2015/074741 WO2016063632A1 (ja) 2014-10-23 2015-08-31 炭化珪素基板およびその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580055161.3A Division CN106796877B (zh) 2014-10-23 2015-08-31 碳化硅衬底和用于制造所述碳化硅衬底的方法

Publications (2)

Publication Number Publication Date
CN112531019A CN112531019A (zh) 2021-03-19
CN112531019B true CN112531019B (zh) 2024-10-11

Family

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CN202011131017.2A Active CN112531019B (zh) 2014-10-23 2015-08-31 碳化硅衬底
CN201580055161.3A Active CN106796877B (zh) 2014-10-23 2015-08-31 碳化硅衬底和用于制造所述碳化硅衬底的方法

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Country Status (5)

Country Link
US (2) US10113249B2 (https=)
JP (4) JP5924462B1 (https=)
CN (2) CN112531019B (https=)
DE (1) DE112015004795T5 (https=)
WO (1) WO2016063632A1 (https=)

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WO2016125404A1 (ja) * 2015-02-02 2016-08-11 富士電機株式会社 炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置
WO2019065994A1 (ja) * 2017-09-29 2019-04-04 株式会社フジミインコーポレーテッド 研磨用組成物
CN109321980B (zh) * 2018-10-16 2019-11-19 山东天岳先进材料科技有限公司 一种高平整度、低损伤大直径单晶碳化硅衬底
KR20200044726A (ko) * 2018-10-16 2020-04-29 에스아이씨씨 컴퍼니 리미티드 고평탄도, 저손상 빅직경의 단결정 탄화규소 기판 및 그 제조 방법
CN109571154A (zh) * 2018-12-28 2019-04-05 天津洙诺科技有限公司 一种4h碳化硅晶片的抛光方法
WO2020235205A1 (ja) * 2019-05-17 2020-11-26 住友電気工業株式会社 炭化珪素基板
JPWO2020235225A1 (https=) * 2019-05-17 2020-11-26
JP7622645B2 (ja) * 2019-12-02 2025-01-28 住友電気工業株式会社 炭化珪素基板および炭化珪素基板の製造方法
KR102340307B1 (ko) * 2020-04-09 2021-12-15 포항공과대학교 산학협력단 4H-SiC 기판에 옴 접촉을 형성하는 반도체 및 그것의 제조 방법
KR102236398B1 (ko) * 2020-09-22 2021-04-02 에스케이씨 주식회사 웨이퍼의 세정방법 및 불순물이 저감된 웨이퍼
CN117855025A (zh) * 2022-09-30 2024-04-09 比亚迪股份有限公司 碳化硅外延片及其制备方法
CN115592555B (zh) * 2022-10-11 2024-12-10 南方科技大学 一种硅基材料的表面修整器及其在修型与抛光中的应用
WO2025249355A1 (ja) * 2024-05-31 2025-12-04 セントラル硝子株式会社 ＳｉＣ単結晶ウエハ、ＳｉＣ単結晶インゴット、ＳｉＣ単結晶ウエハの製造方法、ＳｉＣ単結晶インゴットの製造方法、ＳｉＣ単結晶インゴットの製造装置、及びＳｉＣエピタキシャル成長膜の成膜方法

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Also Published As

Publication number Publication date
JP6634942B2 (ja) 2020-01-22
JP2021102550A (ja) 2021-07-15
DE112015004795T5 (de) 2017-10-12
JP6849049B2 (ja) 2021-03-24
JP2020061562A (ja) 2020-04-16
JP5924462B1 (ja) 2016-05-25
CN112531019A (zh) 2021-03-19
US10704163B2 (en) 2020-07-07
US10113249B2 (en) 2018-10-30
CN106796877B (zh) 2021-03-09
US20170306526A1 (en) 2017-10-26
US20180355513A1 (en) 2018-12-13
JPWO2016063632A1 (ja) 2017-04-27
CN106796877A (zh) 2017-05-31
JP7095765B2 (ja) 2022-07-05
JP2016174162A (ja) 2016-09-29
WO2016063632A1 (ja) 2016-04-28

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