JP5924462B1 - 炭化珪素基板の製造方法 - Google Patents
炭化珪素基板の製造方法 Download PDFInfo
- Publication number
- JP5924462B1 JP5924462B1 JP2015562220A JP2015562220A JP5924462B1 JP 5924462 B1 JP5924462 B1 JP 5924462B1 JP 2015562220 A JP2015562220 A JP 2015562220A JP 2015562220 A JP2015562220 A JP 2015562220A JP 5924462 B1 JP5924462 B1 JP 5924462B1
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- carbide substrate
- washing
- cleaning
- hydrogen peroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 135
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 133
- 239000000758 substrate Substances 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000004140 cleaning Methods 0.000 claims abstract description 109
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 57
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000005498 polishing Methods 0.000 claims abstract description 42
- 239000003054 catalyst Substances 0.000 claims abstract description 28
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 105
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 93
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 72
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 65
- 238000005406 washing Methods 0.000 claims description 61
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 56
- 239000012498 ultrapure water Substances 0.000 claims description 56
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 40
- 229910021529 ammonia Inorganic materials 0.000 claims description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 22
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 12
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 description 15
- 239000007788 liquid Substances 0.000 description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 11
- 229910017604 nitric acid Inorganic materials 0.000 description 11
- 239000000523 sample Substances 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000011575 calcium Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- 239000003513 alkali Substances 0.000 description 6
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052700 potassium Inorganic materials 0.000 description 5
- 239000011591 potassium Substances 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- -1 for example Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 3
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010079 rubber tapping Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000005502 peroxidation Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- CMZUMMUJMWNLFH-UHFFFAOYSA-N sodium metavanadate Chemical compound [Na+].[O-][V](=O)=O CMZUMMUJMWNLFH-UHFFFAOYSA-N 0.000 description 1
- 239000011684 sodium molybdate Substances 0.000 description 1
- 235000015393 sodium molybdate Nutrition 0.000 description 1
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Abstract
Description
炭化珪素基板の研磨には、例えば、CMP(Chemical Mechanical Polishing)法と呼ばれる化学機械的研磨法が採用される。CMP法においては、高い研磨速度で良好な表面粗度を実現するために、例えば、酸化剤の酸化力を高めるよう、表面を触媒作用により改質させる金属触媒を含んだ研磨剤が使用される。金属触媒によって、炭化珪素基板の表面には、炭化珪素よりも硬度が低い酸化層が形成される。酸化層を機械的な力で除去することによって研磨が促進されるため、高い研磨速度と良好な表面の面粗さとを得ることができる。
(1)本開示に係る炭化珪素基板は、主面を有する炭化珪素基板であって、表面粗さ(Ra)が0.1nm以下であり、かつ、主面において、バナジウム、タングステン、モリブデン、白金、ニッケル、チタン、ジルコニウムおよびクロムのそれぞれの濃度はいずれも、1.0×1012atoms/cm2以下である。ここで主面とは、トランジスタ、ダイオードなどのデバイスが形成される面を意味する。
以下、本開示の実施形態の具体例を図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付し、その説明は繰り返さない。また、本明細書中においては、個別面を()、集合面を{}でそれぞれ示す。また、負の指数については、結晶学上、”−”(バー)を数字の上に付けることになっているが、本明細書中では、数字の前に負の符号を付けている。
<炭化珪素基板の構成>
まず、実施の形態1に係る炭化珪素基板の構成について説明する。図1は、実施の形態1に係る炭化珪素基板10の構成を示す部分断面図である。
実施の形態1に係る炭化珪素基板10の製造方法について説明する。図2に示されるように、本実施の形態に係る炭化珪素基板10の製造方法は、準備工程(S10)、研磨工程(S20)および洗浄工程(S30)を含む。
図8に示されるように、洗浄工程は、たとえばアンモニア過水洗浄(S32)。王水洗浄(S33)の順に実施される複数の工程を含む。それぞれの洗浄工程終了後には、超純水洗浄工程が実施されてもよい。なお、硫酸過水洗浄工程の前に、アルカリ洗浄工程が実施されてもよい。
図9に示されるように、洗浄工程は、たとえば硫酸過水洗浄(S31)、アンモニア過水洗浄(S32)、王水洗浄(S33)およびフッ酸洗浄(S35)の順に実施される複数の工程を含む、それぞれの洗浄工程終了後には、超純水洗浄工程が実施されてもよい。なお、硫酸過水洗浄工程の前に、アルカリ洗浄工程が実施されてもよい。
サンプル1〜3の各々について、主面10Aに存在する金属濃度が測定された。サンプル1については、バナジウム(V)、タングステン(W)、モリブデン(Mo)、白金(Pt)、ニッケル(Ni)、チタン(Ti)、クロム(Cr)、鉄(Fe)、銅(Cu)、亜鉛(Zn)、アルミニウム(Al)、ナトリウム(Na)、カルシウム(Ca)、カリウム(K)および錫(Sn)の濃度が測定された。サンプル2およびサンプル3については、バナジウム(V)および亜鉛(Zn)の濃度が測定された。金属濃度の測定は、ICP−MSにより行なわれた。サンプル1に係る主面10Aの金属濃度の測定結果を表2および表3に示す。表2は、主面10Aに存在する金属触媒の濃度の測定結果である。
Claims (11)
- 主面を有する炭化珪素基板を準備する工程と、
前記炭化珪素基板の前記主面を、金属触媒を含む研磨剤を用いて研磨する工程と、
前記研磨する工程後に、前記炭化珪素基板を洗浄する工程とを備え、
前記洗浄する工程は、前記炭化珪素基板を王水で洗浄する工程を含み、
前記洗浄する工程では、前記炭化珪素基板の温度を40℃以下とする、炭化珪素基板の製造方法。 - 前記研磨する工程において、前記研磨剤は、前記金属触媒として、バナジウム、タングステン、モリブデン、白金、ニッケル、チタン、ジルコニウムおよびクロムからなる群から選ばれた少なくとも一種の金属元素を含む、請求項1に記載の炭化珪素基板の製造方法。
- 前記洗浄する工程は、
前記炭化珪素基板を硫酸過水で洗浄する工程と、
前記硫酸過水で洗浄する工程後に、前記炭化珪素基板をアンモニア過水で洗浄する工程とをさらに含み、
前記アンモニア過水で洗浄する工程後に、前記王水で洗浄する工程を実施し、
前記洗浄する工程はさらに、
前記王水で洗浄する工程後に、前記炭化珪素基板を塩酸過水で洗浄する工程と、
前記塩酸過水で洗浄する工程後に、前記炭化珪素基板をフッ酸で洗浄する工程とを含む、請求項1または請求項2に記載の炭化珪素基板の製造方法。 - 前記硫酸過水で洗浄する工程、前記アンモニア過水で洗浄する工程、前記王水で洗浄する工程、前記塩酸過水で洗浄する工程、および前記フッ酸で洗浄する工程の各々において、処理時間を15分以上とする、請求項3に記載の炭化珪素基板の製造方法。
- 前記洗浄する工程は、前記炭化珪素基板をアンモニア過水で洗浄する工程をさらに含み、
前記アンモニア過水で洗浄する工程後に、前記王水で洗浄する工程を実施する、請求項1または請求項2に記載の炭化珪素基板の製造方法。 - 前記アンモニア過水で洗浄する工程および前記王水で洗浄する工程の各々において、処理時間を15分以上とする、請求項5に記載の炭化珪素基板の製造方法。
- 前記洗浄する工程は、
前記炭化珪素基板を硫酸過水で洗浄する工程をさらに含み、
前記硫酸過水で洗浄する工程後に、前記王水で洗浄する工程を実施し、
前記洗浄する工程は、前記王水で洗浄する工程後に、前記炭化珪素基板をフッ酸で洗浄する工程をさらに含む、請求項1または請求項2に記載の炭化珪素基板の製造方法。 - 前記硫酸過水で洗浄する工程、前記王水で洗浄する工程および前記フッ酸で洗浄する工程の各々において、処理時間を15分以上とする、請求項7に記載の炭化珪素基板の製造方法。
- 前記王水で洗浄する工程において、王水と超純水とが混合された混合液における王水の体積濃度は50%以上100%以下である、請求項1から請求項8のいずれか1項に記載の炭化珪素基板の製造方法。
- 前記硫酸過水で洗浄する工程において、硫酸過水が含む硫酸の体積は硫酸過水が含む超純水の体積の1倍以上5倍以下であり、硫酸過水が含む過酸化水素水の体積は硫酸過水が含む超純水の体積の1倍以上3倍以下である、請求項3、請求項4、請求項7および請求項8のいずれか1項に記載の炭化珪素基板の製造方法。
- 前記アンモニア過水で洗浄する工程において、アンモニア過水が含むアンモニア水溶液の体積はアンモニア過水が含む超純水の体積の1/10倍以上1倍以下であり、アンモニア過水が含む過酸化水素水の体積はアンモニア過水が含む超純水の体積の1/10倍以上1倍以下である、請求項3から請求項6のいずれか1項に記載の炭化珪素基板の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014216483 | 2014-10-23 | ||
JP2014216483 | 2014-10-23 | ||
PCT/JP2015/074741 WO2016063632A1 (ja) | 2014-10-23 | 2015-08-31 | 炭化珪素基板およびその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016082779A Division JP6634942B2 (ja) | 2014-10-23 | 2016-04-18 | 炭化珪素基板およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5924462B1 true JP5924462B1 (ja) | 2016-05-25 |
JPWO2016063632A1 JPWO2016063632A1 (ja) | 2017-04-27 |
Family
ID=55760678
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015562220A Active JP5924462B1 (ja) | 2014-10-23 | 2015-08-31 | 炭化珪素基板の製造方法 |
JP2016082779A Active JP6634942B2 (ja) | 2014-10-23 | 2016-04-18 | 炭化珪素基板およびその製造方法 |
JP2019225374A Active JP6849049B2 (ja) | 2014-10-23 | 2019-12-13 | 炭化珪素基板およびその製造方法 |
JP2021033379A Active JP7095765B2 (ja) | 2014-10-23 | 2021-03-03 | 炭化珪素基板およびその製造方法 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016082779A Active JP6634942B2 (ja) | 2014-10-23 | 2016-04-18 | 炭化珪素基板およびその製造方法 |
JP2019225374A Active JP6849049B2 (ja) | 2014-10-23 | 2019-12-13 | 炭化珪素基板およびその製造方法 |
JP2021033379A Active JP7095765B2 (ja) | 2014-10-23 | 2021-03-03 | 炭化珪素基板およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US10113249B2 (ja) |
JP (4) | JP5924462B1 (ja) |
CN (2) | CN112531019A (ja) |
DE (1) | DE112015004795T5 (ja) |
WO (1) | WO2016063632A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112015002906B4 (de) * | 2015-02-02 | 2022-12-22 | Fuji Electric Co., Ltd. | Verfahren zur Herstellung einer Siliciumcarbid-Halbleitervorrichtung und Siliciumcarbid-Halbleitervorrichtung |
JP7507561B2 (ja) * | 2017-09-29 | 2024-06-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2020077849A1 (zh) * | 2018-10-16 | 2020-04-23 | 山东天岳先进材料科技有限公司 | 高平整度、低损伤大直径单晶碳化硅衬底及其制备方法 |
CN109321980B (zh) * | 2018-10-16 | 2019-11-19 | 山东天岳先进材料科技有限公司 | 一种高平整度、低损伤大直径单晶碳化硅衬底 |
CN109571154A (zh) * | 2018-12-28 | 2019-04-05 | 天津洙诺科技有限公司 | 一种4h碳化硅晶片的抛光方法 |
US20220220638A1 (en) * | 2019-05-17 | 2022-07-14 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate |
US20220220637A1 (en) * | 2019-05-17 | 2022-07-14 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate |
US11913135B2 (en) | 2019-12-02 | 2024-02-27 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate and method of manufacturing silicon carbide substrate |
KR102340307B1 (ko) * | 2020-04-09 | 2021-12-15 | 포항공과대학교 산학협력단 | 4H-SiC 기판에 옴 접촉을 형성하는 반도체 및 그것의 제조 방법 |
CN115592555A (zh) * | 2022-10-11 | 2023-01-13 | 南方科技大学(Cn) | 一种硅基材料的表面修整器及其在修型与抛光中的应用 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11157989A (ja) * | 1997-11-25 | 1999-06-15 | Toyo Tanso Kk | 気相成長用サセプター及びその製造方法 |
JP2004014536A (ja) * | 2002-06-03 | 2004-01-15 | Nec Electronics Corp | 半導体基板の汚染物除去方法 |
JP2008280207A (ja) * | 2007-05-10 | 2008-11-20 | Matsushita Electric Ind Co Ltd | SiC単結晶基板の製造方法 |
JP2009117782A (ja) * | 2007-10-15 | 2009-05-28 | Ebara Corp | 平坦化方法及び平坦化装置 |
JP2009194216A (ja) * | 2008-02-15 | 2009-08-27 | Hitachi Ltd | 半導体装置の製造方法 |
JP2011230959A (ja) * | 2010-04-27 | 2011-11-17 | Kazuto Yamauchi | SiC基板へのグラフェン成膜方法及びグラフェン付きSiC基板 |
WO2013011751A1 (ja) * | 2011-07-20 | 2013-01-24 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100612853B1 (ko) * | 2004-07-21 | 2006-08-14 | 삼성전자주식회사 | 와이어 형태의 실리사이드를 포함하는 Si 계열 물질층및 그 제조방법 |
US7514323B2 (en) * | 2005-11-28 | 2009-04-07 | International Business Machines Corporation | Vertical SOI trench SONOS cell |
DE102006011312B4 (de) | 2006-03-11 | 2010-04-15 | Fachhochschule Hildesheim/Holzminden/Göttingen - Körperschaft des öffentlichen Rechts - | Vorrichtung zur Plasmabehandlung unter Atmosphärendruck |
US8734661B2 (en) * | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
JP5267177B2 (ja) * | 2009-02-04 | 2013-08-21 | 日立金属株式会社 | 炭化珪素単結晶基板の製造方法 |
JP2011003769A (ja) * | 2009-06-19 | 2011-01-06 | Panasonic Corp | SiC単結晶基板の製造方法 |
JP5033168B2 (ja) | 2009-09-29 | 2012-09-26 | 忠弘 大見 | 炭化珪素製品、その製造方法、及び、炭化珪素製品の洗浄方法 |
DE112012004193T5 (de) * | 2011-10-07 | 2014-07-03 | Asahi Glass Co., Ltd. | Siliziumcarbid-Einkristallsubstrat und Polierlösung |
JPWO2013073216A1 (ja) * | 2011-11-14 | 2015-04-02 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
US11220757B2 (en) | 2011-12-06 | 2022-01-11 | Osaka Uiversity | Method for manufacturing solid oxide and device therefor |
JP5803786B2 (ja) * | 2012-04-02 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
US9507254B2 (en) | 2012-09-28 | 2016-11-29 | Hoya Corporation | Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device |
JP2014210690A (ja) * | 2013-04-22 | 2014-11-13 | 住友電気工業株式会社 | 炭化珪素基板の製造方法 |
-
2015
- 2015-08-31 US US15/520,435 patent/US10113249B2/en active Active
- 2015-08-31 JP JP2015562220A patent/JP5924462B1/ja active Active
- 2015-08-31 DE DE112015004795.6T patent/DE112015004795T5/de active Pending
- 2015-08-31 CN CN202011131017.2A patent/CN112531019A/zh active Pending
- 2015-08-31 CN CN201580055161.3A patent/CN106796877B/zh active Active
- 2015-08-31 WO PCT/JP2015/074741 patent/WO2016063632A1/ja active Application Filing
-
2016
- 2016-04-18 JP JP2016082779A patent/JP6634942B2/ja active Active
-
2018
- 2018-08-21 US US16/106,101 patent/US10704163B2/en active Active
-
2019
- 2019-12-13 JP JP2019225374A patent/JP6849049B2/ja active Active
-
2021
- 2021-03-03 JP JP2021033379A patent/JP7095765B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11157989A (ja) * | 1997-11-25 | 1999-06-15 | Toyo Tanso Kk | 気相成長用サセプター及びその製造方法 |
JP2004014536A (ja) * | 2002-06-03 | 2004-01-15 | Nec Electronics Corp | 半導体基板の汚染物除去方法 |
JP2008280207A (ja) * | 2007-05-10 | 2008-11-20 | Matsushita Electric Ind Co Ltd | SiC単結晶基板の製造方法 |
JP2009117782A (ja) * | 2007-10-15 | 2009-05-28 | Ebara Corp | 平坦化方法及び平坦化装置 |
JP2009194216A (ja) * | 2008-02-15 | 2009-08-27 | Hitachi Ltd | 半導体装置の製造方法 |
JP2011230959A (ja) * | 2010-04-27 | 2011-11-17 | Kazuto Yamauchi | SiC基板へのグラフェン成膜方法及びグラフェン付きSiC基板 |
WO2013011751A1 (ja) * | 2011-07-20 | 2013-01-24 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
Non-Patent Citations (1)
Title |
---|
JPN6016010558; 服部 梓: '超平坦化加工を施した4H-SiC(0001)表面-高品質グラフェン作製への応用-' 表面科学 Vol.31(2010)No.9, 20100926, pp.466-473, 公益社団法人 日本表面科学会 * |
Also Published As
Publication number | Publication date |
---|---|
WO2016063632A1 (ja) | 2016-04-28 |
US10113249B2 (en) | 2018-10-30 |
JP2021102550A (ja) | 2021-07-15 |
JP6849049B2 (ja) | 2021-03-24 |
US20170306526A1 (en) | 2017-10-26 |
JP7095765B2 (ja) | 2022-07-05 |
US20180355513A1 (en) | 2018-12-13 |
JP6634942B2 (ja) | 2020-01-22 |
CN112531019A (zh) | 2021-03-19 |
JP2020061562A (ja) | 2020-04-16 |
CN106796877A (zh) | 2017-05-31 |
DE112015004795T5 (de) | 2017-10-12 |
JP2016174162A (ja) | 2016-09-29 |
JPWO2016063632A1 (ja) | 2017-04-27 |
CN106796877B (zh) | 2021-03-09 |
US10704163B2 (en) | 2020-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5924462B1 (ja) | 炭化珪素基板の製造方法 | |
JP5716838B2 (ja) | 研磨液 | |
JP6939844B2 (ja) | 炭化珪素基板およびその製造方法、および炭化珪素半導体装置の製造方法 | |
JP6206847B2 (ja) | ワイドバンドギャップ半導体基板の加工方法及びその装置 | |
JP2014210690A (ja) | 炭化珪素基板の製造方法 | |
WO2011021691A1 (ja) | エピタキシャルシリコンウェーハの製造方法 | |
JP5707682B2 (ja) | エピタキシャルシリコンウェーハの製造方法 | |
JP5304255B2 (ja) | 炭化ケイ素基板、エピタキシャルウエハおよび炭化ケイ素基板の製造方法 | |
JP2007150167A (ja) | 半導体ウエーハの平面研削方法および製造方法 | |
JP2001313275A (ja) | シリコンウェーハ用研磨剤及びその研磨方法 | |
JP4857738B2 (ja) | 半導体ウエーハの洗浄方法および製造方法 | |
JP6421505B2 (ja) | サファイア基板の製造方法 | |
JP6797409B2 (ja) | 触媒表面基準エッチング方法及びその装置 | |
CN118181129A (zh) | 一种减薄辅助氮化镓单晶的化学机械抛光方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160322 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160404 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5924462 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |