WO2020077849A1 - 高平整度、低损伤大直径单晶碳化硅衬底及其制备方法 - Google Patents

高平整度、低损伤大直径单晶碳化硅衬底及其制备方法 Download PDF

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WO2020077849A1
WO2020077849A1 PCT/CN2018/123718 CN2018123718W WO2020077849A1 WO 2020077849 A1 WO2020077849 A1 WO 2020077849A1 CN 2018123718 W CN2018123718 W CN 2018123718W WO 2020077849 A1 WO2020077849 A1 WO 2020077849A1
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Prior art keywords
silicon carbide
crystal silicon
flatness
low
carbide substrate
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PCT/CN2018/123718
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English (en)
French (fr)
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梁庆瑞
王含冠
王瑞
时文灵
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山东天岳先进材料科技有限公司
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Priority claimed from CN201811205291.2A external-priority patent/CN109321980B/zh
Priority claimed from CN201811205285.7A external-priority patent/CN109545680B/zh
Application filed by 山东天岳先进材料科技有限公司 filed Critical 山东天岳先进材料科技有限公司
Priority to EP18922088.2A priority Critical patent/EP3666937B1/en
Priority to JP2019571534A priority patent/JP7298915B2/ja
Priority to KR1020197037367A priority patent/KR20200044726A/ko
Priority to KR1020217027445A priority patent/KR102471865B1/ko
Publication of WO2020077849A1 publication Critical patent/WO2020077849A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • This application relates to the technical field of crystal material processing, in particular to a high-flatness, low-damage large-diameter single-crystal silicon carbide substrate and a preparation method thereof.
  • Monocrystalline silicon carbide is one of the most important third-generation semiconductor materials, because of its excellent properties such as large band gap width, high saturation electron mobility, strong breakdown field, high thermal conductivity, etc., in power electronics, RF devices, optoelectronics The device and other fields have very broad application prospects.
  • the prior art uses sand wire cutting, which is a cutting method similar to grinding.
  • the cutting force is very weak, which greatly reduces the processing efficiency.
  • large particles of free abrasives can cause deep scratches.
  • the next process is difficult to remove.
  • Copper plate and tin plate are single-sided processing methods. Due to the soft surface of the plate, poor flatness control of the plate surface will seriously affect the wafer profile (TTV / LTV / BOW / Warp).
  • the purpose of this application is to provide a high-flatness, low-damage large-diameter single-crystal silicon carbide substrate and a preparation method thereof.
  • the surface roughness of the substrate is ⁇ 0.2 nm, and there is no Subsurface damage layer.
  • the surface roughness, the proportion of fine scratches (unqualified squares), the proportion of pits (pits), and the proportion of bumps (bumps) of the single crystal silicon carbide substrate prepared by the preparation method of the present application are all low, and Good surface data, small thickness deviation, small curvature and small warpage.
  • the present application provides a single crystal silicon carbide substrate with high flatness and low damage and large diameter.
  • the surface roughness of the substrate is ⁇ 0.2 nm, and there is no subsurface damage layer.
  • the surface roughness ⁇ 0.10 nm, the fine scratches of the substrate account for ⁇ 10%, pit accounts for ⁇ 0.1 pcs / cm 2 , and bump accounts for ⁇ 0.1 pcs / cm 2 .
  • the surface roughness is ⁇ 0.07 nm
  • the proportion of fine scratches die is less than 6%
  • the proportion of pit is less than 0.05 pieces / cm 2
  • the proportion of bump is less than 0.05 pieces / cm 2 .
  • the thickness of the substrate is less than 500um.
  • the thickness of the substrate is less than 350um. More preferably, the thickness of the substrate is less than 200um. More preferably, the thickness of the substrate is less than 100um. More preferably, the thickness of the substrate is less than 50um.
  • the diameter of the substrate is one of 4 inches, 6 inches and 8 inches. Preferably, the diameter of the substrate is one of 6 inches and 8 inches.
  • the diameter of the substrate is 4 inches, and its profile data: TTV (total thickness change) ⁇ 5um, LTV (local thickness change) (1cm * 1cm) ⁇ 2um, Bow (bending degree) ⁇ 20um, Warp (Warpage) ⁇ 40um.
  • the profile data TTV ⁇ 3um, LTV (1cm * 1cm) ⁇ 1.5um, Bow ⁇ 15um, Warp ⁇ 30um. More preferably, the face data: TTV ⁇ 1um, LTV (1cm * 1cm) ⁇ 1um, Degree Bow ⁇ 10um, Warp ⁇ 20um. More preferably, the profile data: TTV ⁇ 0.5um, LTV (1cm * 1cm) ⁇ 0.5um, curvature Bow ⁇ 5um, Warp ⁇ 10um. More preferably, the face data: TTV ⁇ 0.1um, LTV (1cm * 1cm) ⁇ 0.08um, Degree Bow ⁇ 2um, Warp ⁇ 5um. More preferably, the profile data: TTV ⁇ 0.08um, LTV (1cm * 1cm) ⁇ 0.08um, curvature Bow ⁇ 0.5um, Warp ⁇ 1um.
  • the diameter of the substrate is 6 inches, and its profile data: TTV ⁇ 10um, LTV (1cm * 1cm) ⁇ 2um, Bow ⁇ 40um, Warp ⁇ 60um.
  • the profile data TTV ⁇ 5um, LTV (1cm * 1cm) ⁇ 1.5um, Bow ⁇ 30um, Warp ⁇ 50um.
  • the face data TTV ⁇ 3um, LTV (1cm * 1cm) ⁇ 1um, Bow ⁇ 20um, Warp ⁇ 30um. More preferably, the face data: TTV ⁇ 1um, LTV (1cm * 1cm) ⁇ 0.5um, Bow ⁇ 10um, Warp ⁇ 15um.
  • the profile data TTV ⁇ 0.15um, LTV (1cm * 1cm) ⁇ 0.12um, Bow ⁇ 3um, Warp ⁇ 8um. More preferably, the face data: TTV ⁇ 0.1um, LTV (1cm * 1cm) ⁇ 0.1um, Bow ⁇ 1um, Warp ⁇ 2um.
  • the diameter of the substrate is 8 inches, and its profile data: TTV ⁇ 10um, LTV (1cm * 1cm) ⁇ 2um, Bow ⁇ 50um, Warp ⁇ 70um.
  • the profile data TTV ⁇ 6um, LTV (1cm * 1cm) ⁇ 1.5um, Bow ⁇ 40um, Warp ⁇ 60um.
  • the face data TTV ⁇ 4um, LTV (1cm * 1cm) ⁇ 1um, Bow ⁇ 30um, Warp ⁇ 50um.
  • the face data TTV ⁇ 2um, LTV (1cm * 1cm) ⁇ 0.5um, Bow ⁇ 20um, Warp ⁇ 40um.
  • profile data TTV ⁇ 1um, LTV (1cm * 1cm) ⁇ 0.5um, Bow ⁇ 5um, Warp ⁇ 10um; more preferably, profile data: TTV ⁇ 0.5um, LTV (1cm * 1cm) ⁇ 0.2um, Bow ⁇ 3um, Warp ⁇ 5um.
  • the manufacturing method of the high-flatness, low-damage large-diameter single-crystal silicon carbide substrate includes the following steps:
  • the consolidated abrasive processing includes wire cutting and grinding wheel grinding, consolidating abrasive particles on the wire, and consolidating abrasive particles on the grinding wheel.
  • the wire cutting process is specifically diamond wire cutting, in which abrasive particles with a mass percentage concentration of 2-10% are added to the cooling liquid used in the diamond wire cutting process;
  • the grinding of the grinding wheel includes two steps of rough grinding and fine grinding, wherein the consolidated abrasive in the coarse grinding is that abrasive particles of 1000 mesh to 5000 mesh are consolidated on the grinding wheel, and the consolidated abrasive in the fine grinding is in Abrasive particles of 20,000 mesh to 30,000 mesh are consolidated on the grinding wheel.
  • the chemical mechanical polishing is acidic chemical mechanical polishing, wherein the polishing liquid used in the acidic chemical mechanical polishing processing step includes: abrasive, oxidizing agent, water-soluble acidic polymer, and RO water.
  • the present application also provides a method for preparing a single crystal silicon carbide substrate with high flatness and low damage and large diameter.
  • the method for preparing the substrate includes the following steps: performing full-consolidation abrasive on single crystal silicon carbide Processing, and then performing chemical mechanical polishing to obtain the high flatness and low damage single crystal silicon carbide substrate; wherein, the consolidated abrasive processing includes wire cutting and grinding wheel grinding, and the abrasive is consolidated on the cutting line Particles, consolidating abrasive particles on the grinding wheel.
  • the abrasive particles are selected from one or more of silicon oxide, aluminum oxide, cerium oxide, silicon carbide, boron carbide, zirconia, and diamond.
  • the single crystal silicon carbide is also subjected to preliminary processing, wherein the preliminary processing adopts a consolidated abrasive processing method.
  • wire cutting is specifically diamond wire cutting.
  • abrasive particles are added to the cooling liquid used in the diamond wire cutting process, wherein the mass percentage concentration of the abrasive particles in the cooling liquid is 2-10%.
  • the abrasive particles may be one or more of alumina, diamond, and boron carbide.
  • the particle size of the abrasive particles is 50-100 nm.
  • the particle size of the abrasive particles is 60-80 nm.
  • the cutting wire tension is 22-40N
  • the wire running speed is 1200-1800m / min
  • the swing angle is 1-10 °
  • the feed speed is 5-15mm / h
  • the diamond wire diameter is 0.12-0.28 mm.
  • the wire tension in the diamond wire cutting step is 30-40N
  • the wire running speed is 1300-1600m / min
  • the swing angle is 3-8 °
  • the feed speed is 8-12mm / h
  • the diamond wire diameter is 0.15-0.20 mm.
  • the cutting wire tension is 33-38N
  • the wire running speed is 1400-1500m / min
  • the swing angle is 4-6 °
  • the feed speed is 9-11mm / h
  • the diamond wire diameter is 0.15- 0.18mm.
  • the principle of the diamond wire cutting method is to use diamond wire (through metal nickel) to form a line network with equal spacing between the groove wheels, and reciprocate the wire network at high speed to achieve the cutting effect.
  • a certain concentration of abrasive particles is added to the cooling liquid.
  • the particles may be alumina, diamond, boron carbide, etc., and the mass percentage concentration is 2% to 10%. It combines the traditional mortar cutting method and the consolidated mortar wire cutting method. Make the cutting surface roughness lower and the tool mark rate lower.
  • the grinding wheel grinding includes two steps of rough grinding and fine grinding.
  • the consolidated abrasive in the coarse grinding is the abrasive particles with 1000 mesh to 5000 mesh fixed on the grinding wheel;
  • the consolidated abrasive in the fine grinding is the abrasive particles with 20,000 mesh to 30,000 mesh fixed on the grinding wheel.
  • the consolidated abrasives in the coarse grinding are abrasive particles with 2000 mesh to 4000 mesh fixed on the grinding wheel;
  • the consolidated abrasives in the fine grinding are abrasive particles with 25,000 mesh and 30,000 mesh fixed on the grinding wheel .
  • the consolidated abrasive in the coarse grinding is 3,000 mesh abrasive particles consolidated on the grinding wheel;
  • the consolidated abrasive in the fine grinding is 28,000 mesh abrasive particles consolidated on the grinding wheel.
  • the rotation speed of the grinding wheel in the rough grinding step is 1000-2000rpm and the feed speed is 0.2-1um / s; the rotation speed of the grinding wheel in the fine grinding step is 1000-2000rpm and the feed speed is 0.2-1um / s.
  • the rotation speed of the grinding wheel in the rough grinding step is 1300-1600rpm, and the feed speed is 0.6-0.8um / s; the rotation speed of the grinding wheel in the fine grinding step is 1000-1200rpm, and the feed speed is 0.4-0.6um / s.
  • the principle of the grinding wheel grinding is to use a resin grinding wheel containing diamond particles to process the wafer on one side.
  • the wafer rotates at a low speed, and the grinding wheel rotates at a high speed. Different grinding wheels will get different roughness of the processed surface.
  • chemical mechanical polishing is specifically acidic chemical mechanical polishing.
  • the polishing liquid used in the acidic chemical mechanical polishing step includes: abrasive, oxidizer, water-soluble acidic polymer and RO water; wherein, the mass concentration of abrasive is 1-30%; the abrasive is selected from oxidation One or more of silicon, aluminum oxide, diamond particles, cerium oxide, silicon carbide, boron carbide, zirconium oxide, diamond; the oxidizing agent is selected from one of hydrogen peroxide, potassium permanganate, nitric acid, hydrochloric acid, potassium perchlorate One or more; the water-soluble acidic polymer is selected from one or more of carboxyl polymer and sulfonic acid polymer.
  • the polishing liquid used in the acidic chemical mechanical polishing treatment step includes: abrasive, oxidant, water-soluble acidic polymer, dispersant, and RO water; wherein, the mass percentage concentration of the abrasive is 1-30%; the abrasive One or more selected from silicon oxide, aluminum oxide, diamond particles, cerium oxide, silicon carbide, boron carbide, zirconium oxide, and diamond; the oxidant is selected from hydrogen peroxide, potassium permanganate, nitric acid, hydrochloric acid, potassium perchlorate One or more of; the water-soluble acidic polymer is selected from one or more of carboxyl polymer and sulfonic acid-based polymer; the dispersant is selected from higher alcohol, polyvinyl alcohol, polyethylene glycol One or more of them, the mass percentage concentration of the dispersant is 0.2 to 1%.
  • Adding a water-soluble acidic polymer to the polishing solution can not only control the pH of the polishing solution, but also maintain the dispersion stability of the polishing solution.
  • the pH of the polishing liquid has been kept in the range of 2-4, and the dispersion uniformity of the abrasive in the polishing liquid is basically not affected, reducing the polishing surface of the product The possibility of scratches and damage.
  • polishing liquid may further include the following components: corrosion inhibitor, viscosity modifier, surfactant, antibacterial agent and the like.
  • the pH value of the acidic chemical mechanical polishing solution is 2-4, the rotation speed is 20-50 rpm, the pressure is 200-500 g / cm 2 , and the material flow rate is 3-10 L / min.
  • the acidic chemical mechanical polishing solution in the acidic chemical mechanical polishing step has a pH value of 2.5-3.5, a rotation speed of 25-45 rpm, a pressure of 250-450 g / cm 2 , and a material flow rate of 5-7 L / min.
  • the acidic chemical mechanical polishing solution in the acidic chemical mechanical polishing step has a pH value of 3.0-3.5, a rotation speed of 30-40 rpm, a pressure of 300-400 g / cm 2 , and a material flow rate of 6-7 L / min.
  • This application adopts fully consolidated abrasive processing method, which can greatly improve the processing efficiency; consolidated abrasive replaces the traditional free abrasive grinding and polishing. Its advantage is that the abrasive is embedded on the carrier, and the embedded scratches are very shallow, which can be solved. The problem of scratches caused by abrasive aggregation and abrasive disc surface inlaying. Consolidated abrasive grinding can effectively remove the high points on the surface of the wafer, the grinding wheel is not easily deformed, and the processed surface shape parameters are good, thereby improving the flatness of the wafer.
  • This application uses grinding wheel consolidated abrasives for processing.
  • the resulting single crystal silicon carbide substrate has better profile data, and has lower total thickness variation, local thickness variation, curvature and warpage.
  • This application adopts acidic CMP processing method, which can quickly and effectively remove the damage caused by Grinding (grinding) process, the efficiency is improved by 5-10 times, and at the same time, it can ensure that the wafer surface roughness is ⁇ 0.2nm.
  • the substrate prepared by this application has no subsurface damage layer.
  • the processing method of the single crystal silicon carbide substrate of the present application is applicable to the processing of 2, 3, 4, 6, and 8 inch substrates.
  • FIG. 1 is an AFM surface morphology diagram of a single crystal silicon carbide substrate prepared by a conventional processing method.
  • FIG. 2 is an AFM surface morphology diagram of a single crystal silicon carbide substrate prepared by the method of the present application.
  • FIG. 3 is a flow chart of a method for preparing a single crystal silicon carbide substrate with high flatness and low damage according to the present application.
  • a method for preparing a single crystal silicon carbide substrate with high flatness and low damage includes:
  • Step 1 Primary processing: Initial processing of single crystal silicon carbide substrate;
  • Step 2 Diamond wire cutting: use the diamond wire to cut the single crystal silicon carbide processed in the first step.
  • the cutting wire tension is 22-40N
  • the line running speed is 1200-1800m / min
  • the swing angle is 1-10 °
  • Knife speed 5-15mm / h diamond wire diameter 0.12-0.28mm;
  • Step 3 Grinding wheel grinding: Install two kinds of grinding wheels in two stations of Grinding equipment as rough grinding and fine grinding, and grind the single crystal silicon carbide cut by diamond wire in step 2 , Coarse grinding uses 1000 mesh-5000 mesh grinding wheel, rotation speed, feed speed; fine grinding uses 20000 mesh-30000 mesh grinding wheel, rotation speed 1000-2000rpm, feed speed 0.2-1um / s;
  • Acidic CMP processing acidic chemical mechanical polishing liquid is used to perform acidic CMP processing on the single crystal silicon carbide ground by the grinding wheel of step 3. During the acidic CMP processing, the pH value is maintained at 2-4, the speed is 20-50rpm, and the pressure is 200 ⁇ 500g / cm 2 , material flow 3-10L / min.
  • a method for preparing a single crystal silicon carbide substrate with high flatness and low damage with a diameter of 100 mm includes:
  • Step 1 Primary processing: Initial processing of single crystal silicon carbide substrate;
  • Step 2 Diamond wire cutting: use the diamond wire to cut the single crystal silicon carbide processed in the first step. Among them, the cutting wire tension is 22N, the line running speed is 1200m / min, the swing angle is 5 °, and the feed speed is 5mm / h. Diamond wire diameter 0.12mm;
  • Step 3 Grinding wheel grinding: Install two kinds of grinding wheels in two stations of Grinding equipment as rough grinding and fine grinding, and grind the single crystal silicon carbide cut by diamond wire in step 2 , Coarse grinding uses 1000 mesh grinding wheel, rotation speed, feed rate; fine grinding uses 20000 mesh grinding wheel, rotation speed 1000rpm, feed rate 0.2um / s;
  • Acidic CMP processing acidic chemical mechanical polishing liquid is used to perform acidic CMP processing on the single crystal silicon carbide ground by the grinding wheel of step 3.
  • the pH value is maintained at 2
  • the rotational speed is 20 rpm
  • the pressure is 200 g / cm 2 .
  • the material flow rate is 5L / min.
  • Example 1 The technical parameters of the single crystal silicon carbide substrate with a diameter of 100 mm obtained in Example 1 are as follows:
  • the surface roughness is 0.05nm, there is no subsurface damage layer, the proportion of fine scratch die is 5%, the proportion of pit is 0.05 pieces / cm 2 , and the proportion of bump is 0.05 pieces / cm 2 .
  • TTV is 2um
  • LTV (1cm * 1cm) is 1.5um
  • the Bow is 15um
  • Warp is 30um.
  • a method for preparing a single crystal silicon carbide substrate with high flatness and low damage with a diameter of 100 mm includes:
  • Step 1 Primary processing: Initial processing of single crystal silicon carbide substrate;
  • Step 2 Diamond wire cutting: Use the diamond wire to cut the single crystal silicon carbide processed in the first step. Among them, the cutting wire tension is 40N, the linear running speed is 1800m / min, the swing angle is 10 °, and the feed speed is 15mm / h. Diamond wire diameter 0.28mm;
  • Step 3 Grinding wheel grinding: Install two kinds of grinding wheels in two stations of Grinding equipment as rough grinding and fine grinding, and grind the single crystal silicon carbide cut by diamond wire in step 2 , Coarse grinding uses 5000 mesh grinding wheel, rotation speed, feed speed; fine grinding uses 30000 mesh grinding wheel, rotation speed 2000rpm, feed speed 1um / s;
  • Acidic CMP processing acidic chemical mechanical polishing liquid is used to perform acidic CMP processing on the single crystal silicon carbide ground by the grinding wheel of step 3, the pH value is maintained during the acidic CMP processing, the rotation speed is 50 rpm, and the pressure is 500 g / cm 2 . Flow rate 5L / min.
  • Example 2 The technical parameters of the single crystal silicon carbide substrate with a diameter of 100 mm obtained in Example 2 are as follows:
  • the surface roughness is 0.08 nm, there is no subsurface damage layer, the proportion of fine scratch die is 4%, the proportion of pit is 0.03 pcs / cm 2 , and the proportion of bump is 0.03 pcs / cm 2 .
  • TTV 1.5um
  • LTV (1cm * 1cm) 1.1um
  • the bow Bow 10um
  • Warp 20um.
  • a method for preparing a single crystal silicon carbide substrate with a high flatness and a low damage of 150 mm in diameter includes:
  • Step 1 Primary processing: Initial processing of single crystal silicon carbide substrate;
  • Step 2 Diamond wire cutting: use the diamond wire to cut the single crystal silicon carbide processed in the first step. Among them, the cutting wire tension is 30N, the line running speed is 1500m / min, the swing angle is 5 °, and the feed speed is 10mm / h. Diamond wire diameter 0.15mm;
  • Step 3 Grinding wheel grinding: Install two kinds of grinding wheels in two stations of Grinding equipment as rough grinding and fine grinding, and grind the single crystal silicon carbide cut by diamond wire in step 2
  • For rough grinding use 3000 mesh grinding wheel, rotation speed and feed speed
  • for fine grinding use 25000 mesh grinding wheel, rotation speed 1500rpm and feed speed 0.5um / s;
  • Acidic CMP processing acidic chemical mechanical polishing liquid is used to perform acidic CMP processing on the single crystal silicon carbide ground by the grinding wheel of step 3, the pH value is maintained at 3 during the acidic CMP processing, the rotation speed is 30 rpm, and the pressure is 300 g / cm 2 .
  • the material flow is 8L / min.
  • Example 3 The technical parameters of the single crystal silicon carbide substrate with a diameter of 150 mm obtained in Example 3 are as follows:
  • the surface roughness is 0.08 nm, there is no subsurface damage layer, the proportion of fine scratch die is 6%, the ratio of pit is 0.06 pcs / cm 2 , and the proportion of bump is 0.05 pcs / cm 2 .
  • TTV is 3um
  • LTV (1cm * 1cm) is 1.8um
  • the Bow is 17um
  • Warp is 25um.
  • a method for preparing a single crystal silicon carbide substrate with a high flatness and a low damage of 150 mm in diameter includes:
  • Step 1 Primary processing: Initial processing of single crystal silicon carbide substrate;
  • Step 2 Diamond wire cutting: use the diamond wire to cut the single crystal silicon carbide processed in the first step. Among them, the cutting wire tension is 35N, the line running speed is 1600m / min, the swing angle is 5 °, and the feed speed is 12mm / h. Diamond wire diameter 0.15mm;
  • Step 3 Grinding wheel grinding: Install two kinds of grinding wheels in two stations of Grinding equipment as rough grinding and fine grinding, and grind the single crystal silicon carbide cut by diamond wire in step 2 , Rough grinding uses 3000 mesh grinding wheel, rotation speed, feed rate; fine grinding uses 25000 mesh grinding wheel, rotation speed 1500rpm, feed rate 0.6um / s;
  • Acidic CMP processing acidic chemical mechanical polishing liquid is used to perform acidic CMP processing on the single crystal silicon carbide ground by the grinding wheel of step 3, the pH value is maintained at 2.5 during the acidic CMP processing, the speed is 40 rpm, and the pressure is 400 g / cm 2 . The material flow is 6L / min.
  • Example 4 The technical parameters of the single crystal silicon carbide substrate with a diameter of 150 mm obtained in Example 4 are as follows:
  • the surface roughness is 0.01 nm, there is no subsurface damage layer, the proportion of fine scratch die is 5%, the ratio of pit is 0.03 pcs / cm 2 , and the proportion of bump is 0.03 pcs / cm 2 .
  • the profile data are: TTV 1.4um, LTV (1cm * 1cm) 0.9um, curvature Bow 9um, Warp 16um.
  • a method for preparing a single crystal silicon carbide substrate with a high flatness and a low damage of 200 mm in diameter includes:
  • Step 1 Primary processing: Initial processing of single crystal silicon carbide substrate;
  • Step 2 Use the diamond wire to cut the single crystal silicon carbide processed in the first step. Among them, the cutting wire tension is 35N, the line running speed is 1500m / min, the swing angle is 4 °, and the feed speed is 10mm / h. Diamond wire diameter 0.154mm;
  • Step 3 Grinding wheel grinding: Install two kinds of grinding wheels in two stations of Grinding equipment as rough grinding and fine grinding, and grind the single crystal silicon carbide cut by diamond wire in step 2 , Rough grinding uses 3000 mesh grinding wheel, rotation speed, feed rate; fine grinding uses 25000 mesh grinding wheel, rotation speed 1500rpm, feed rate 0.6um / s;
  • Step 4 Acid CMP processing: Use acid chemical mechanical polishing liquid to perform acid CMP processing on the single crystal silicon carbide ground by the grinding wheel of step 3. During the acid CMP processing, the pH value is maintained at 2, the rotation speed is 35 rpm, and the pressure is 400 g / cm 2 . Flow rate 8L / min.
  • Example 5 The technical parameters of the single crystal silicon carbide substrate with a diameter of 200 mm obtained in Example 5 are as follows:
  • the surface roughness is 0.01 nm, there is no subsurface damage layer, the proportion of fine scratch die is 9%, the proportion of pit is 0.03 pieces / cm 2 , and the proportion of bump is 0.02 pieces / cm 2 .
  • TTV is 3.5um
  • LTV (1cm * 1cm) is 2.3um
  • the Bow is 24um
  • Warp is 35um.
  • Fig. 1 shows the surface 10um * 10um AFM surface morphology of the single crystal silicon carbide substrate prepared by traditional processing methods. From the AFM surface morphology, the surface of the resulting substrate has more scratches and more Large roughness, there is a damaged layer on the surface.
  • Fig. 2 shows the surface morphology diagram of 10um * 10um AFM surface of the single crystal silicon carbide substrate prepared by the method of the present application. From the AFM surface morphology diagram, the surface of the obtained substrate has almost no scratches and the surface is uniform Good performance, low roughness, no damage layer on the surface.
  • the surface roughness and knife mark rate of the cutting blades obtained with and without abrasives in the diamond wire cutting process were tested.
  • the test results show that no abrasive is added to the cooling fluid, the surface roughness of the cutting blade is less than 500-700nm, and the blade mark rate is 5% -10%; after adding abrasive in the cooling fluid, the surface roughness of the cutting blade is 200-400nm, and the blade mark rate 5%.
  • the cutting rate of diamond wire cutting is 5-10 times higher than that of sand wire cutting.

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Abstract

本申请公开了一种高平整度、低损伤大直径单晶碳化硅衬底及制备方法，涉及晶体材料加工技术领域。所述衬底的表面粗糙度≤0.2nm，所述衬底的细小划痕die占比＜10％、pit占比＜0.1个/cm2、bump占比＜0.1个/cm2。所述制备方法包括如下步骤：对单晶碳化硅进行全固结磨料加工，然后再进行化学机械抛光处理，获得所述高平整度、低损伤单晶碳化硅衬底；其中，所述固结磨料加工包括线切割和砂轮研磨，在所述切割线上固结磨料颗粒，在所述砂轮上固结磨料颗粒。通过本申请的制备方法制得的单晶碳化硅衬底的表面粗糙度、细小划痕die占比、pit占比、bump均较低，且面型数据好，厚度偏差小、弯曲度小、翘曲度小。

Description

高平整度、低损伤大直径单晶碳化硅衬底及其制备方法 技术领域
本申请涉及晶体材料加工技术领域，具体说是一种高平整度、低损伤大直径单晶碳化硅衬底及其制备方法。
背景技术
单晶碳化硅是最重要的第三代半导体材料之一，因其具有禁带宽度大、饱和电子迁移率高、击穿场强大、热导率高等优异性质，在电力电子、射频器件、光电子器件等领域有着及其广泛的应用前景。
目前商品单晶碳化硅多使用PVT(物理气相沉积法)的生长方法，然后通过端面加工、多线切割、研磨、机械抛光、化学机械抛光、清洗封装、形成开盒即用的碳化硅衬底。由于单晶碳化硅莫氏为9.2，自然界中仅次于金刚石，对其进行物理加工难度非常高，而且碳化硅具有高的化学稳定性，如耐酸碱、耐氧化能力，这大大增加了化学机械抛光(CMP)的难度。化学机械抛光是目前唯一的一种全局平坦化抛光方法，使用的是化学抛光液，其中包含强氧化性的化学剂和作为磨料的颗粒。抛光过程中，化学作用和机械作用同时作用于晶片表面，去除晶片表面的损伤层。
鉴于碳化硅材料的加工难度，目前多使用初加工→砂线切割→游离磨料研磨→铜盘抛光→锡盘抛光→粗CMP→精CMP的方法，存在加工步骤过于繁琐、效率低、游离磨料在加工过程中难以清洗、一次通过率低、面型差(TTV/Bow/Warp)、亚表面损伤难以消除等问题。若加工完成后衬底表面存在损伤，会直接以三角形缺陷的方式蔓延至外延片表面，形成大量的不合格区。下一步制造芯片的过程中，这些不合格区会大大降低芯片良率，是影响芯片良率的首要因素。
现有技术由于使用砂线切割，这是一种类似于研磨的切削方式，切削力非常弱，使得加工效率大大降低；在游离磨料研磨过程中，游离磨料的大颗粒会导致深划痕的产生，下一道工序难以去除。铜盘锡盘是单面加工方法，由于盘面较软，盘面的平整度控制不好会严重影响晶片面型(TTV/LTV/BOW/Warp)。
传统的碱性CMP加工一直存在表面质量和去除率的矛盾：用高硬度的磨料可以提高去除率，但会造成表面损伤；用低硬度的磨料可以获得高质量的表面，但是去除率非常低。最终获得的晶片表面，若存在损伤层，会对应用造成致命的影响。
发明内容
针对现有技术中存在的缺陷，本申请的目的在于提供一种高平整度、低损伤大直径单晶碳化硅衬底及其制备方法，所述衬底的表面粗糙度≤0.2nm，且无亚表面损伤层。通过本申请的制备方法制得的单晶碳化硅衬底的表面粗糙度、细小划痕die(不合格方块)占比、pit(凹坑)占比、bump(凸起)均较低，且面型数据好，厚度偏差小、弯曲度小、翘曲度小。
为达到以上目的，本申请采取的技术方案是：
一方面，本申请提供了一种高平整度、低损伤大直径单晶碳化硅衬底，所述衬底的表面粗糙度≤0.2nm，无亚表面损伤层。
进一步的，所述表面粗糙度≤0.10nm，所述衬底的细小划痕die占比＜10％、pit占比＜0.1个/cm 2、bump占比＜0.1个/cm 2。
更进一步的，所述表面粗糙度≤0.09nm，所述细小划痕die占比＜8％、pit占比＜0.08个/cm 2、bump占比＜0.08个/cm 2。
更进一步的，所述表面粗糙度≤0.07nm，所述细小划痕die占比＜6％、pit占比＜0.05个/cm 2、bump占比＜0.05个/cm 2。
更进一步的，所述表面粗糙度≤0.05nm，所述细小划痕die占比＜4％、pit占比＜0.03个/cm 2、bump占比＜0.03个/cm 2。
进一步的，所述衬底厚度小于500um。优选的，所述衬底厚度小于350um。更优选的，所述衬底厚度小于200um。更优选的，所述衬底厚度小于100um。更优选的，所述衬底厚度小于50um。
进一步的，所述衬底的直径是4英寸、6英寸和8英寸中的一种。优选的，所述衬底的直径是6英寸和8英寸中的一种。
进一步的，所述衬底的直径为4英寸，其面型数据：TTV(总厚度变化)＜5um，LTV(局部厚度变化)(1cm*1cm)＜2um，Bow(弯曲度)＜20um，Warp(翘曲度)＜40um。
优选的，面型数据：TTV＜3um，LTV(1cm*1cm)＜1.5um，Bow＜15um，Warp＜30um。更优选的，面型数据：TTV＜1um，LTV(1cm*1cm)＜1um，度Bow＜10um，Warp＜20um。更优选的，面型数据：TTV＜0.5um，LTV(1cm*1cm)＜0.5um，弯曲度Bow＜5um，Warp＜10um。更优选的，面型数据：TTV＜0.1um，LTV(1cm*1cm)＜0.08um，度Bow＜2um，Warp＜5um。更优选的，面型数据：TTV＜0.08um，LTV(1cm*1cm)＜0.08um，弯曲度Bow＜0.5um，Warp＜1um。
进一步的，所述衬底的直径为6英寸，其面型数据：TTV＜10um，LTV(1cm*1cm)＜2um，Bow＜40um，Warp＜60um。优选的，面型数据：TTV＜5um，LTV(1cm*1cm)＜1.5um，Bow＜30um，Warp＜50um。更优选的，面型数据：TTV＜3um，LTV(1cm*1cm)＜1um，Bow＜20um，Warp＜30um。更优选的，面型数据：TTV＜1um，LTV(1cm*1cm)＜0.5um，Bow＜10um，Warp＜15um。更优选的，面型数据：TTV＜0.15um，LTV(1cm*1cm)＜0.12um，Bow＜3um，Warp＜8um。更优选的，面型数据：TTV＜0.1um，LTV(1cm*1cm)＜0.1um，Bow＜1um，Warp＜2um。
进一步的，所述衬底的直径为8英寸，其面型数据：TTV＜10um，LTV(1cm*1cm)＜2um，Bow＜50um，Warp＜70um。优选的，面型数据：TTV＜6um，LTV(1cm*1cm)＜1.5um，Bow＜40um，Warp＜60um。更优选的，面型数据：TTV＜4um，LTV(1cm*1cm)＜1um，Bow＜30um，Warp＜50um。更优选的，面型数据：TTV＜2um，LTV(1cm*1cm)＜0.5um，Bow＜20um，Warp＜40um。更优选的，面型数据：TTV＜1um，LTV(1cm*1cm)＜0.5um，Bow＜5um，Warp＜10um；更优选的，面型数据：TTV＜0.5um，LTV(1cm*1cm)＜0.2um，Bow＜3um，Warp＜5um。
可选地，所述的高平整度、低损伤大直径单晶碳化硅衬底的制备方法包括如下步骤：
对单晶碳化硅进行全固结磨料加工，然后再进行化学机械抛光处理，获得所述高平整度、低损伤单晶碳化硅衬底；
其中，所述固结磨料加工包括线切割和砂轮研磨，在所述线上固结磨料颗粒，在所述砂轮上固结磨料颗粒。
可选地，所述线切割加工具体为钻石线切割，其中，在进行钻石线切割过程中使用的冷却液中添加质量百分比浓度为2-10％的磨料颗粒；
所述砂轮研磨包括粗磨和精磨两个步骤，其中，所述粗磨中固结磨料是在研磨砂轮上固结了1000目-5000目的磨料颗粒，所述精磨中固结磨料是在研磨砂轮上固结了20000目-30000目的磨料颗粒。
可选地，所述化学机械抛光为酸性化学机械抛光，其中，所述酸性化学机械抛光处理步骤中使用的抛光液包括：磨料、氧化剂、水溶性酸性聚合物和RO水。
另一方面，本申请还提供了一种高平整度、低损伤大直径单晶碳化硅衬底的制备方法，所述衬底的制备方法包括如下步骤：对单晶碳化硅进行全固结磨料加工，然后再进行化学机械抛光处理，获得所述高平整 度、低损伤单晶碳化硅衬底；其中，所述固结磨料加工包括线切割和砂轮研磨，在所述切割线上固结磨料颗粒，在所述砂轮上固结磨料颗粒。
进一步的，所述磨料颗粒选自氧化硅、氧化铝、氧化铈、碳化硅、碳化硼、氧化锆、金刚石中的一种或多种。
进一步的，在对单晶碳化硅进行钻石线切割之前，对所述单晶碳化硅还进行初加工，其中，初加工采用固结磨料加工方式。
进一步的，所述线切割具体为钻石线切割。
进一步的，在所述钻石线切割加工中使用的冷却液中添加磨料颗粒，其中，所述磨料颗粒在冷却液中的质量百分比浓度为2-10％。所述磨料颗粒可以是氧化铝、金刚石、碳化硼中的一种或多种。所述磨料颗粒的粒径为50-100nm。优选的，所述磨料颗粒的粒径为60-80nm。
进一步的，所述钻石线切割加工步骤中的切割线张力22-40N，线运行速度1200-1800m/min，摇摆角度1-10°，进刀速度5-15mm/h，钻石线直径0.12-0.28mm。优选的，所述钻石线切割加工步骤中的切割线张力30-40N，线运行速度1300-1600m/min，摇摆角度3-8°，进刀速度8-12mm/h，钻石线直径0.15-0.20mm。更优选的，所述钻石线切割加工步骤中的切割线张力33-38N，线运行速度1400-1500m/min，摇摆角度4-6°，进刀速度9-11mm/h，钻石线直径0.15-0.18mm。
钻石线切割方法的原理是：使用钻石线(通过金属镍)在槽轮之间形成一张等间距的线网，通过线网高速往复运动，达到切削效果。本申请在冷却液中添加一定浓度的磨料颗粒，颗粒可以是氧化铝、金刚石、碳化硼等，质量百分比浓度为2％～10％，结合了传统的砂浆切割方法和固结砂浆线切割方法，使得切削面粗糙度更低、刀痕率更低。
进一步的，所述砂轮研磨包括粗磨和精磨两个步骤。其中，所述粗磨中固结磨料是在研磨砂轮上固结了1000目-5000目的磨料颗粒；所述 精磨中固结磨料是在研磨砂轮上固结了20000目-30000目的磨料颗粒。优选的，所述粗磨中固结磨料是在研磨砂轮上固结了2000目-4000目的磨料颗粒；所述精磨中固结磨料是在研磨砂轮上固结了25000目-30000目的磨料颗粒。更优选的，所述粗磨中固结磨料是在研磨砂轮上固结了3000目的磨料颗粒；所述精磨中固结磨料是在研磨砂轮上固结了28000目的磨料颗粒。
更进一步的，所述粗磨步骤的研磨砂轮的转速为1000-2000rpm、进刀速度为0.2-1um/s；所述精磨步骤的研磨砂轮的转速1000-2000rpm、进刀速度0.2-1um/s。优选的，所述粗磨步骤的研磨砂轮的转速为1300-1600rpm、进刀速度为0.6-0.8um/s；所述精磨步骤的研磨砂轮的转速1000-1200rpm、进刀速度0.4-0.6um/s。
所述砂轮研磨(Grinding)的原理是：使用包含金刚石颗粒的树脂砂轮，对晶片进行单面加工。晶片低速转动，砂轮高速转动，不同目数的砂轮会得到不同的加工表面粗糙度。
进一步的，所述化学机械抛光具体为酸性化学机械抛光。
进一步的，所述酸性化学机械抛光处理步骤中使用的抛光液包括：磨料、氧化剂、水溶性酸性聚合物和RO水；其中，磨料的质量百分比浓度为1-30％；所述磨料选自氧化硅、氧化铝、钻石颗粒、氧化铈、碳化硅、碳化硼、氧化锆、金刚石中的一种或多种；所述氧化剂选自双氧水、高锰酸钾、硝酸、盐酸、高氯酸钾中的一种或多种；所述水溶性酸性聚合物选自羧基聚合物、磺酸基聚合物中一种或多种。
进一步的，所述酸性化学机械抛光处理步骤中使用的抛光液包括：磨料、氧化剂、水溶性酸性聚合物、分散剂和RO水；其中，磨料的质量百分比浓度为1-30％；所述磨料选自氧化硅、氧化铝、钻石颗粒、氧化铈、碳化硅、碳化硼、氧化锆、金刚石中的一种或多种；所述氧化剂选自双 氧水、高锰酸钾、硝酸、盐酸、高氯酸钾中的一种或多种；所述水溶性酸性聚合物选自羧基聚合物、磺酸基聚合物中一种或多种；所述分散剂选自高级醇、聚乙烯醇、聚乙二醇中的一种多种，所述分散剂的质量百分比浓度为0.2～1％。
在抛光液中增加水溶性酸性聚合物，不仅能起到控制抛光液的pH值，还能起到维持抛光液分散稳定性的作用。增加水溶性酸性聚合物后，在进行化学机械抛光过程中，抛光液的pH值一直保持在2-4范围内，且磨料在抛光液中的分散均匀性基本不受影响，减少了产品抛光表面出现划痕和损伤的可能性。
更进一步的，所述抛光液中还可包括以下组分：缓蚀剂、粘度调节剂、表面活性剂、抗菌剂等。
更进一步的，所述酸性化学机械抛光处理步骤中的酸性化学机械抛光液的pH值2-4，转速20-50rpm，压力200-500g/cm 2，料流量3-10L/min。优选的，所述酸性化学机械抛光处理步骤中的酸性化学机械抛光液的pH值2.5-3.5，转速25-45rpm，压力250-450g/cm 2，料流量5-7L/min。更优选的，所述酸性化学机械抛光处理步骤中的酸性化学机械抛光液的pH值3.0-3.5，转速30-40rpm，压力300-400g/cm 2，料流量6-7L/min。
本申请具有如下有益效果：
1.本申请采用全固结磨料加工方法，可以大幅度提升加工效率；固结磨料取代传统的游离磨料研磨和抛光，其优势在于磨料镶嵌在载体上，产生的嵌入划痕很浅，可以解决由于磨料聚集、磨料盘面镶嵌导致的划痕问题。固结磨料研磨，可以有效去除晶片表面高点，砂轮不易变形，加工出来的面型参数好，从而提高晶片平整度。
2.本申请采用砂轮固结磨料进行加工，所得的单晶碳化硅衬底具有较好的面型数据，具有较低的总厚度变化、局部厚度变化、弯曲度和翘曲度。
3.本申请采用酸性CMP加工方法，可以快速有效的去除Grinding(研磨)工序造成的损伤，效率提升5-10倍，同时可以保证晶片表面粗糙度≤0.2nm。本申请制得的衬底无亚表面损伤层。
4.本申请的单晶碳化硅衬底的加工方法适用于2、3、4、6、8英寸衬底加工，衬底尺寸越大，优势越明显。
附图说明
此处所说明的附图用来提供对本申请的进一步理解，构成本申请的一部分，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。在附图中：
图1为采用传统加工方法制得的单晶碳化硅衬底的AFM表面形貌图。
图2为采用本申请的方法制得的单晶碳化硅衬底的AFM表面形貌图。
图3为本申请的一种高平整度、低损伤单晶碳化硅衬底的制备方法的流程图。
具体实施方式
为了更清楚的阐释本申请的整体构思，下面结合说明书附图以示例的方式进行详细说明。
一种高平整度、低损伤单晶碳化硅衬底的制备方法，所述制备方法包括：
步骤1、初加工：对单晶碳化硅衬底进行初加工；
步骤2、钻石线切割：使用钻石线对经步骤1初加工的单晶碳化硅进行切割，其中，切割线张力22‐40N，线运行速度1200‐1800m/min，摇摆 角度1‐10°，进刀速度5‐15mm/h，钻石线直径0.12‐0.28mm；
步骤3、砂轮研磨：在Grinding(研磨)设备两个工位中分别安装两种目数的砂轮，作为粗磨和精磨，对经步骤2钻石线切割的单晶碳化硅进行研磨加工，其中，粗磨使用1000目‐5000目砂轮，转速，进刀速度；精磨使用20000目‐30000目砂轮，转速1000‐2000rpm，进刀速度0.2‐1um/s；
步骤4、酸性CMP加工：使用酸性化学机械抛光液对经步骤3砂轮研磨后的单晶碳化硅进行酸性CMP加工，酸性CMP加工过程中保持pH值为2‐4，转速20‐50rpm，压力200‐500g/cm 2，料流量3‐10L/min。
实施例1
一种直径为100mm的高平整度、低损伤单晶碳化硅衬底的制备方法，所述制备方法包括：
步骤1、初加工：对单晶碳化硅衬底进行初加工；
步骤2、钻石线切割：使用钻石线对经步骤1初加工的单晶碳化硅进行切割，其中，切割线张力22N，线运行速度1200m/min，摇摆角度5°，进刀速度5mm/h，钻石线直径0.12mm；
步骤3、砂轮研磨：在Grinding(研磨)设备两个工位中分别安装两种目数的砂轮，作为粗磨和精磨，对经步骤2钻石线切割的单晶碳化硅进行研磨加工，其中，粗磨使用1000目砂轮，转速，进刀速度；精磨使用20000目砂轮，转速1000rpm，进刀速度0.2um/s；
步骤4、酸性CMP加工：使用酸性化学机械抛光液对经步骤3砂轮研磨后的单晶碳化硅进行酸性CMP加工，酸性CMP加工过程中保持pH值为2，转速20rpm，压力200g/cm 2，料流量5L/min。
由实施例1所得的直径为100mm的单晶碳化硅衬底，其技术参数如下：
表面粗糙度为0.05nm，无亚表面损伤层，细小划痕die占比为5％，pit占比为0.05个/cm 2，bump占比为0.05个/cm 2。
面型数据为：TTV为2um，LTV(1cm*1cm)为1.5um，弯曲度Bow为15um，Warp为30um。
实施例2
一种直径为100mm的高平整度、低损伤单晶碳化硅衬底的制备方法，所述制备方法包括：
步骤1、初加工：对单晶碳化硅衬底进行初加工；
步骤2、钻石线切割：使用钻石线对经步骤1初加工的单晶碳化硅进行切割，其中，切割线张力40N，线运行速度1800m/min，摇摆角度10°，进刀速度15mm/h，钻石线直径0.28mm；
步骤3、砂轮研磨：在Grinding(研磨)设备两个工位中分别安装两种目数的砂轮，作为粗磨和精磨，对经步骤2钻石线切割的单晶碳化硅进行研磨加工，其中，粗磨使用5000目砂轮，转速，进刀速度；精磨使用30000目砂轮，转速2000rpm，进刀速度1um/s；
步骤4、酸性CMP加工：使用酸性化学机械抛光液对经步骤3砂轮研磨后的单晶碳化硅进行酸性CMP加工，酸性CMP加工过程中保持pH值4，转速50rpm，压力500g/cm 2，料流量5L/min。
由实施例2所得的直径为100mm的单晶碳化硅衬底，其技术参数如下：
表面粗糙度为0.08nm，无亚表面损伤层，细小划痕die占比为4％，pit占比为0.03个/cm 2，bump占比为0.03个/cm 2。
面型数据为：TTV为1.5um，LTV(1cm*1cm)为1.1um，弯曲度Bow为10um，Warp为20um。
实施例3
一种直径为150mm的高平整度、低损伤单晶碳化硅衬底的制备方法，所述制备方法包括：
步骤1、初加工：对单晶碳化硅衬底进行初加工；
步骤2、钻石线切割：使用钻石线对经步骤1初加工的单晶碳化硅进行切割，其中，切割线张力30N，线运行速度1500m/min，摇摆角度5°，进刀速度10mm/h，钻石线直径0.15mm；
步骤3、砂轮研磨：在Grinding(研磨)设备两个工位中分别安装两种目数的砂轮，作为粗磨和精磨，对经步骤2钻石线切割的单晶碳化硅进行研磨加工，其中，粗磨使用3000目砂轮，转速，进刀速度；精磨使用25000目砂轮，转速1500rpm，进刀速度0.5um/s；
步骤4、酸性CMP加工：使用酸性化学机械抛光液对经步骤3砂轮研磨后的单晶碳化硅进行酸性CMP加工，酸性CMP加工过程中保持pH值为3，转速30rpm，压力300g/cm 2，料流量8L/min。
由实施例3所得的直径为150mm的单晶碳化硅衬底，其技术参数如下：
表面粗糙度为0.08nm，无亚表面损伤层，细小划痕die占比为6％，pit占比为0.06个/cm 2，bump占比为0.05个/cm 2。
面型数据为：TTV为3um，LTV(1cm*1cm)为1.8um，弯曲度Bow为17um，Warp为25um。
实施例4
一种直径为150mm的高平整度、低损伤单晶碳化硅衬底的制备方法，所述制备方法包括：
步骤1、初加工：对单晶碳化硅衬底进行初加工；
步骤2、钻石线切割：使用钻石线对经步骤1初加工的单晶碳化硅进行切割，其中，切割线张力35N，线运行速度1600m/min，摇摆角度5°，进刀速度12mm/h，钻石线直径0.15mm；
步骤3、砂轮研磨：在Grinding(研磨)设备两个工位中分别安装两种目数的砂轮，作为粗磨和精磨，对经步骤2钻石线切割的单晶碳化硅进行研磨加工，其中，粗磨使用3000目砂轮，转速，进刀速度；精磨使用25000目砂轮，转速1500rpm，进刀速度0.6um/s；
步骤4、酸性CMP加工：使用酸性化学机械抛光液对经步骤3砂轮研磨后的单晶碳化硅进行酸性CMP加工，酸性CMP加工过程中保持pH值为2.5，转速40rpm，压力400g/cm 2，料流量6L/min。
由实施例4所得的直径为150mm的单晶碳化硅衬底，其技术参数如下：
表面粗糙度为0.01nm，无亚表面损伤层，细小划痕die占比为5％，pit占比为0.03个/cm 2，bump占比为0.03个/cm 2。
面型数据为：TTV为1.4um，LTV(1cm*1cm)为0.9um，弯曲度Bow为9um，Warp为16um。
实施例5
一种直径为200mm的高平整度、低损伤单晶碳化硅衬底的制备方法，所述制备方法包括：
步骤1、初加工：对单晶碳化硅衬底进行初加工；
步骤2、钻石线切割：使用钻石线对经步骤1初加工的单晶碳化硅进行切割，其中，切割线张力35N，线运行速度1500m/min，摇摆角度4°，进刀速度10mm/h，钻石线直径0.154mm；
步骤3、砂轮研磨：在Grinding(研磨)设备两个工位中分别安装两种目数的砂轮，作为粗磨和精磨，对经步骤2钻石线切割的单晶碳化硅进行研磨加工，其中，粗磨使用3000目砂轮，转速，进刀速度；精磨使用25000目砂轮，转速1500rpm，进刀速度0.6um/s；
步骤4、酸性CMP加工：使用酸性化学机械抛光液对经步骤3砂轮研磨后的单晶碳化硅进行酸性CMP加工，酸性CMP加工过程中保持pH值2，转速35rpm，压力400g/cm 2，料流量8L/min。
由实施例5所得的直径为200mm的单晶碳化硅衬底，其技术参数如下：
表面粗糙度为0.01nm，无亚表面损伤层，细小划痕die占比为9％，pit占比为0.03个/cm 2，bump占比为0.02个/cm 2。
面型数据为：TTV为3.5um，LTV(1cm*1cm)为2.3um，弯曲度Bow为24um，Warp为35um。
对比例1
图1显示了采用传统加工方法制得的单晶碳化硅衬底的表面10um*10um AFM表面形貌图，从AFM表面形貌图上看，所得衬底的表面具有较多的划痕和较大的粗糙度，表面存在损伤层。图2显示了采用本申请的方法制得的单晶碳化硅衬底的表面10um*10um AFM表面形貌图，从AFM表面形貌图上看，所得衬底的表面几乎无划痕，表面均匀性较好，粗糙度低，表面不存在损伤层。
对比例2
针对钻石线切割过程中的冷却液中加与不加磨料所得到的切割片的表面粗糙度和刀痕率进行了测试。测试结果显示，冷却液中不添加磨料， 切割片表面粗糙度未500-700nm，刀痕率5％-10％；冷却液中添加磨料后，切割片表面粗糙度200-400nm，刀痕率＜5％。
钻石线切割的切削速率比砂线切割的切削速率提高5-10倍。
本说明书中未作详细描述的内容属于本领域专业技术人员公知的现有技术。以上所述仅为本申请的实施例而已，并不用于限制本申请。对于本领域技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。

Claims (26)

  1. 一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，所述衬底的表面粗糙度≤0.2nm，且无亚表面损伤层。
  2. 根据权利要求1所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述衬底的表面粗糙度≤0.10nm，所述衬底的细小划痕die占比＜10％、pit占比＜0.1个/cm 2、bump占比＜0.1个/cm 2。
  3. 根据权利要求2所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述衬底的表面粗糙度≤0.09nm，所述衬底的细小划痕die占比＜8％、pit占比＜0.08个/cm 2、bump占比＜0.08个/cm 2；
    优选地，所述衬底的表面粗糙度≤0.07nm，所述衬底的细小划痕die占比＜6％、pit占比＜0.05个/cm 2、bump占比＜0.05个/cm 2。
  4. 根据权利要求1所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述衬底厚度小于500um。
  5. 根据权利要求4所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述衬底厚度小于350um，优选小于200um，更优选小于100um，更优选小于50um。
  6. 根据权利要求1所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述衬底的直径是4英寸、6英寸和8英寸。
  7. 根据权利要求6所述的一种高平整度、低损伤大直径单晶碳化硅 衬底，其特征在于，
    所述衬底的直径是6英寸和8英寸。
  8. 根据权利要求6所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述衬底的直径为100mm，其面型数据：TTV＜5um，LTV(1cm*1cm)＜2um，Bow＜20um，Warp＜40um。
  9. 根据权利要求8所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    面型数据：TTV＜3um，LTV(1cm*1cm)＜1.5um，Bow＜15um，Warp＜30um。
    优选地，面型数据：TTV＜1um，LTV(1cm*1cm)＜1um，度Bow＜10um，Warp＜20um；
    更优选地，面型数据：TTV＜0.5um，LTV(1cm*1cm)＜0.5um，弯曲度Bow＜5um，Warp＜10um。
  10. 根据权利要求6所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述衬底的直径为150mm，其面型数据：TTV＜10um，LTV(1cm*1cm)＜2um，Bow＜40um，Warp＜60um。
  11. 根据权利要求10所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述衬底的面型数据：TTV＜5um，LTV(1cm*1cm)＜1.5um，Bow＜30um，Warp＜50um；
    优选的，面型数据：TTV＜3um，LTV(1cm*1cm)＜1um，Bow＜20um，Warp＜30um；
    更优选的，面型数据：TTV＜1um，LTV(1cm*1cm)＜0.5um，Bow＜ 10um，Warp＜15um。
  12. 根据权利要求6所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述衬底的直径为200mm，其面型数据：TTV＜10um，LTV(1cm*1cm)＜2um，Bow＜50um，Warp＜70um；
  13. 根据权利要求12所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    面型数据：TTV＜6um，LTV(1cm*1cm)＜1.5um，Bow＜40um，Warp＜60um；
    优选的，面型数据：TTV＜4um，LTV(1cm*1cm)＜1um，Bow＜30um，Warp＜50um；
    更优选的，面型数据：TTV＜2um，LTV(1cm*1cm)＜0.5um，Bow＜20um，Warp＜40um。
  14. 根据权利要求1-13任一所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，所述衬底的制备方法包括如下步骤：
    对单晶碳化硅进行全固结磨料加工，然后再进行化学机械抛光处理，获得所述高平整度、低损伤单晶碳化硅衬底；
    其中，所述固结磨料加工包括线切割和砂轮研磨，在所述线上固结磨料颗粒，在所述砂轮上固结磨料颗粒。
  15. 根据权利要求14所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述线切割加工具体为钻石线切割，其中，在进行钻石线切割过程中使用的冷却液中添加质量百分比浓度为2-10％的磨料颗粒；
    所述砂轮研磨包括粗磨和精磨两个步骤，其中，所述粗磨中固结磨料是在研磨砂轮上固结了1000目-5000目的磨料颗粒，所述精磨中固结 磨料是在研磨砂轮上固结了20000目-30000目的磨料颗粒。
  16. 根据权利要求14所述的一种高平整度、低损伤大直径单晶碳化硅衬底，其特征在于，
    所述化学机械抛光为酸性化学机械抛光，其中，所述酸性化学机械抛光处理步骤中使用的抛光液包括：磨料、氧化剂、水溶性酸性聚合物和RO水。
  17. 权利要求1-16任一项所述的高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，所述制备方法包括如下步骤：
    对单晶碳化硅进行全固结磨料加工，然后再进行化学机械抛光处理，获得所述高平整度、低损伤单晶碳化硅衬底；
    其中，所述固结磨料加工包括线切割和砂轮研磨，在所述切割线上固结磨料颗粒，在所述砂轮上固结磨料颗粒。
  18. 根据权利要求17所述的一种高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，
    所述线切割加工具体为钻石线切割，其中，在进行钻石线切割过程中使用的冷却液中添加质量百分比浓度为2-10％的磨料颗粒；
    所述冷却液中使用的磨料颗粒选自氧化铝、金刚石、碳化硼中的一种或多种，所述磨料颗粒的粒径为50-100nm。
  19. 根据权利要求18所述的一种高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，
    所述钻石线切割加工步骤中的切割线张力22-40N，线运行速度1200-1800m/min，摇摆角度1-10°，进刀速度5-15mm/h，钻石线直径0.12-0.28mm；
    优选的，所述钻石线切割加工步骤中的切割线张力30-40N，线运行速度1300-1600m/min，摇摆角度3-8°，进刀速度8-12mm/h，钻石线直 径0.15-0.20mm。
  20. 根据权利要求17所述的一种高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，
    所述砂轮研磨包括粗磨和精磨两个步骤；
    其中，所述粗磨中固结磨料是在研磨砂轮上固结了1000目-5000目的磨料颗粒；
    所述精磨中固结磨料是在研磨砂轮上固结了20000目-30000目的磨料颗粒。
  21. 根据权利要求20所述的一种高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，
    所述粗磨步骤的研磨砂轮的转速为1000-2000rpm、进刀速度为0.2-1um/s；所述精磨步骤的研磨砂轮的转速1000-2000rpm、进刀速度为0.2-1um/s。
  22. 根据权利要求17所述的一种高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，
    所述化学机械抛光为酸性化学机械抛光。
  23. 根据权利要求22所述的一种高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，
    所述酸性化学机械抛光处理步骤中使用的抛光液包括：磨料、氧化剂、水溶性酸性聚合物、分散剂和RO水；
    其中，磨料的质量百分比浓度为1-30％；
    所述磨料选自氧化硅、氧化铝、钻石颗粒、氧化铈、碳化硅、碳化硼、氧化锆、金刚石中的一种或多种；
    所述氧化剂选自双氧水、高锰酸钾、硝酸、盐酸、高氯酸钾中的一种或多种；
    所述水溶性酸性聚合物选自羧基聚合物、磺酸基聚合物中一种或多种；
    所述分散剂选自高级醇、聚乙烯醇、聚乙二醇中的一种多种，所述分散剂的质量百分比浓度为0.2～1％。
  24. 根据权利要求23所述的一种高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，
    所述酸性化学机械抛光处理步骤中的酸性化学机械抛光液的pH值2-4，转速20-50rpm，压力200-500g/cm 2，料流量3-10L/min。
  25. 根据权利要求17所述的一种高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，
    在对单晶碳化硅进行钻石线切割之前，对所述单晶碳化硅还进行初加工，其中初加工采用固结磨料加工方式。
  26. 根据权利要求17所述的一种高平整度、低损伤单晶碳化硅衬底的快速制备方法，其特征在于，
    所述磨料颗粒选自氧化硅、氧化铝、氧化铈、碳化硅、碳化硼、氧化锆、金刚石中的一种或多种。
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