JPWO2020235225A1 - - Google Patents
Info
- Publication number
- JPWO2020235225A1 JPWO2020235225A1 JP2021520639A JP2021520639A JPWO2020235225A1 JP WO2020235225 A1 JPWO2020235225 A1 JP WO2020235225A1 JP 2021520639 A JP2021520639 A JP 2021520639A JP 2021520639 A JP2021520639 A JP 2021520639A JP WO2020235225 A1 JPWO2020235225 A1 JP WO2020235225A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/129—Preparing bulk and homogeneous wafers by polishing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019093882 | 2019-05-17 | ||
| PCT/JP2020/015006 WO2020235225A1 (ja) | 2019-05-17 | 2020-04-01 | 炭化珪素基板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2020235225A1 true JPWO2020235225A1 (https=) | 2020-11-26 |
Family
ID=73458521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021520639A Pending JPWO2020235225A1 (https=) | 2019-05-17 | 2020-04-01 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12071708B2 (https=) |
| JP (1) | JPWO2020235225A1 (https=) |
| CN (1) | CN113811643B (https=) |
| TW (1) | TW202043557A (https=) |
| WO (1) | WO2020235225A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113825863B (zh) * | 2019-05-17 | 2024-03-22 | 住友电气工业株式会社 | 碳化硅衬底 |
| JP7600662B2 (ja) * | 2020-12-17 | 2024-12-17 | 住友電気工業株式会社 | 炭化珪素基板の製造方法 |
| CN117545711A (zh) * | 2021-04-20 | 2024-02-09 | 奇跃公司 | 超声处理纳米几何形状控制过程和方法 |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11162917A (ja) * | 1997-09-10 | 1999-06-18 | Toshiba Corp | 半導体装置の製造方法及び処理液の生成装置 |
| JP2008004879A (ja) * | 2006-06-26 | 2008-01-10 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| JP2008182248A (ja) * | 2008-01-28 | 2008-08-07 | Seiko Epson Corp | 洗浄方法及び半導体装置の製造方法 |
| JP2010087106A (ja) * | 2008-09-30 | 2010-04-15 | Showa Denko Kk | 炭化珪素単結晶基板 |
| WO2012043496A1 (ja) * | 2010-09-27 | 2012-04-05 | 多摩化学工業株式会社 | 半導体基板用アルカリ性処理液の精製方法及び精製装置 |
| WO2016038980A1 (ja) * | 2014-09-08 | 2016-03-17 | 住友電気工業株式会社 | 炭化珪素単結晶基板およびその製造方法 |
| JP2016056057A (ja) * | 2014-09-09 | 2016-04-21 | 日立金属株式会社 | サファイア基板およびその製造方法 |
| WO2016084561A1 (ja) * | 2014-11-27 | 2016-06-02 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法、および炭化珪素半導体装置の製造方法 |
| JP2016139685A (ja) * | 2015-01-27 | 2016-08-04 | 日立金属株式会社 | 単結晶炭化珪素基板、単結晶炭化珪素基板の製造方法、および単結晶炭化珪素基板の検査方法 |
| JP2016155757A (ja) * | 2016-05-20 | 2016-09-01 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
| JP2016174162A (ja) * | 2014-10-23 | 2016-09-29 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法 |
| WO2017078127A1 (ja) * | 2015-11-05 | 2017-05-11 | 有限会社ビジョンサイテック | 偏光された平行光により基板を評価することを含む方法 |
| JP2017523950A (ja) * | 2014-07-29 | 2017-08-24 | ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ | 昇華による大径シリコンカーバイド結晶の製造方法及び関連する半導体ｓｉｃウェハ |
| CN109321980A (zh) * | 2018-10-16 | 2019-02-12 | 山东天岳先进材料科技有限公司 | 一种高平整度、低损伤大直径单晶碳化硅衬底 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6825123B2 (en) * | 2003-04-15 | 2004-11-30 | Saint-Goban Ceramics & Plastics, Inc. | Method for treating semiconductor processing components and components formed thereby |
| JP2008280207A (ja) | 2007-05-10 | 2008-11-20 | Matsushita Electric Ind Co Ltd | ＳｉＣ単結晶基板の製造方法 |
| JP5033168B2 (ja) * | 2009-09-29 | 2012-09-26 | 忠弘 大見 | 炭化珪素製品、その製造方法、及び、炭化珪素製品の洗浄方法 |
| JP5803786B2 (ja) | 2012-04-02 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
| JP2014210690A (ja) * | 2013-04-22 | 2014-11-13 | 住友電気工業株式会社 | 炭化珪素基板の製造方法 |
-
2020
- 2020-04-01 JP JP2021520639A patent/JPWO2020235225A1/ja active Pending
- 2020-04-01 CN CN202080034953.3A patent/CN113811643B/zh active Active
- 2020-04-01 US US17/611,139 patent/US12071708B2/en active Active
- 2020-04-01 WO PCT/JP2020/015006 patent/WO2020235225A1/ja not_active Ceased
- 2020-05-12 TW TW109115746A patent/TW202043557A/zh unknown
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11162917A (ja) * | 1997-09-10 | 1999-06-18 | Toshiba Corp | 半導体装置の製造方法及び処理液の生成装置 |
| JP2008004879A (ja) * | 2006-06-26 | 2008-01-10 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| JP2008182248A (ja) * | 2008-01-28 | 2008-08-07 | Seiko Epson Corp | 洗浄方法及び半導体装置の製造方法 |
| JP2010087106A (ja) * | 2008-09-30 | 2010-04-15 | Showa Denko Kk | 炭化珪素単結晶基板 |
| WO2012043496A1 (ja) * | 2010-09-27 | 2012-04-05 | 多摩化学工業株式会社 | 半導体基板用アルカリ性処理液の精製方法及び精製装置 |
| JP2017523950A (ja) * | 2014-07-29 | 2017-08-24 | ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ | 昇華による大径シリコンカーバイド結晶の製造方法及び関連する半導体ｓｉｃウェハ |
| WO2016038980A1 (ja) * | 2014-09-08 | 2016-03-17 | 住友電気工業株式会社 | 炭化珪素単結晶基板およびその製造方法 |
| JP2016056057A (ja) * | 2014-09-09 | 2016-04-21 | 日立金属株式会社 | サファイア基板およびその製造方法 |
| JP2016174162A (ja) * | 2014-10-23 | 2016-09-29 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法 |
| WO2016084561A1 (ja) * | 2014-11-27 | 2016-06-02 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法、および炭化珪素半導体装置の製造方法 |
| JP2016139685A (ja) * | 2015-01-27 | 2016-08-04 | 日立金属株式会社 | 単結晶炭化珪素基板、単結晶炭化珪素基板の製造方法、および単結晶炭化珪素基板の検査方法 |
| WO2017078127A1 (ja) * | 2015-11-05 | 2017-05-11 | 有限会社ビジョンサイテック | 偏光された平行光により基板を評価することを含む方法 |
| JP2016155757A (ja) * | 2016-05-20 | 2016-09-01 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
| CN109321980A (zh) * | 2018-10-16 | 2019-02-12 | 山东天岳先进材料科技有限公司 | 一种高平整度、低损伤大直径单晶碳化硅衬底 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113811643A (zh) | 2021-12-17 |
| WO2020235225A1 (ja) | 2020-11-26 |
| CN113811643B (zh) | 2024-03-22 |
| US20220220638A1 (en) | 2022-07-14 |
| US12071708B2 (en) | 2024-08-27 |
| TW202043557A (zh) | 2020-12-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221221 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240130 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20240321 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240702 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20240827 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241029 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250204 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20250319 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250519 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250902 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20251031 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20260113 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20260331 |