WO2016084561A1 - 炭化珪素基板およびその製造方法、および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素基板およびその製造方法、および炭化珪素半導体装置の製造方法 Download PDFInfo
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- WO2016084561A1 WO2016084561A1 PCT/JP2015/081027 JP2015081027W WO2016084561A1 WO 2016084561 A1 WO2016084561 A1 WO 2016084561A1 JP 2015081027 W JP2015081027 W JP 2015081027W WO 2016084561 A1 WO2016084561 A1 WO 2016084561A1
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- silicon carbide
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- carbide substrate
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 98
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 28
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000005498 polishing Methods 0.000 claims description 111
- 239000007788 liquid Substances 0.000 claims description 56
- 150000002500 ions Chemical class 0.000 claims description 41
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 claims description 3
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
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- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Definitions
- the present disclosure relates to a silicon carbide substrate, a manufacturing method thereof, and a manufacturing method of a silicon carbide semiconductor device.
- a silicon carbide (SiC) substrate can be used for manufacturing a semiconductor device. Specifically, for example, a semiconductor layer made of silicon carbide is formed on a silicon carbide substrate by epitaxial growth, and an electrode or the like is further formed on the semiconductor layer, whereby a semiconductor device such as a diode or a transistor can be manufactured.
- the quality of the semiconductor layer formed by epitaxial growth on the silicon carbide substrate is greatly affected by the surface roughness of the main surface of the silicon carbide substrate on which the semiconductor layer is formed. Therefore, polishing such as mechanical polishing (MP) or chemical mechanical polishing (CMP) is performed on the main surface of the silicon carbide substrate on which the semiconductor layer is to be formed by epitaxial growth. Thereby, the smoothness of the main surface on which the semiconductor layer is to be formed is ensured, and a high-quality semiconductor layer can be epitaxially grown.
- polishing such as mechanical polishing (MP) or chemical mechanical polishing (CMP) is performed on the main surface of the silicon carbide substrate on which the semiconductor layer is to be formed by epitaxial growth.
- the silicon carbide substrate of the present disclosure is made of silicon carbide, and when the main surface is etched with chlorine gas, the total length of the linear etch pit groups observed on the main surface is equal to or less than the substrate diameter.
- a method for manufacturing a silicon carbide substrate according to the present disclosure includes a step of preparing a raw material substrate and a step of polishing a main surface of the raw material substrate by chemical mechanical polishing.
- the step of polishing the main surface by chemical mechanical polishing includes the step of chemical mechanical polishing the main surface using a polishing liquid having a permanganate ion concentration exceeding 5 mass%.
- FIG. 1 is a schematic perspective view showing the shape of a silicon carbide substrate.
- FIG. 2 is a flowchart showing an example of a method for manufacturing a silicon carbide substrate.
- FIG. 3 is a schematic view showing the structure of the polishing apparatus.
- FIG. 4 is a differential interference micrograph showing an example of a linear etch pit group.
- FIG. 5 is a graph showing the relationship between the permanganate ion concentration and the polishing rate.
- FIG. 6 is a differential interference micrograph showing an example of a linear etch pit group.
- FIG. 7 is a diagram showing the relationship between the length of the linear etch pit group and the device defect rate.
- the silicon carbide substrate according to the present disclosure is made of silicon carbide, and when the main surface is etched with chlorine gas, the total length of the linear etch pit groups observed on the main surface is equal to or less than the substrate diameter.
- the quality of the semiconductor layer may be insufficient.
- the etch pit group in which etch pits are linearly arranged on the main surface.
- the quality of the semiconductor layer becomes insufficient.
- the total length of the linear etch pit groups which is the total length of the linear etch pit groups observed on the main surface, is equal to or smaller than the substrate diameter, it is formed on the main surface by epitaxial growth.
- the semiconductor layer has a high quality suitable for manufacturing a semiconductor device such as a diode or a transistor.
- the total length of the linear etch pit groups observed on the main surface is equal to or less than the substrate diameter.
- the silicon carbide may have a hexagonal crystal structure.
- the main surface may be a crystal surface having an off angle of less than 8 ° with respect to the Si surface.
- a method for manufacturing a silicon carbide substrate according to the present disclosure includes a step of preparing a raw material substrate and a step of polishing a main surface of the raw material substrate by chemical mechanical polishing.
- the step of polishing the main surface by chemical mechanical polishing includes the step of chemical mechanical polishing the main surface using a polishing liquid having a permanganate ion concentration exceeding 5 mass%.
- the linear etch pit group can be reduced by setting the concentration of permanganate ions, which are oxidizing agents contained in the CMP polishing liquid, higher than the conventional one. This can be considered for the following reasons, for example.
- the main surface of the substrate is polished by simultaneously oxidizing the surface region of the silicon carbide substrate with an oxidizing agent and removing the oxidized surface layer region with an abrasive.
- an oxidation rate capable of ensuring the smoothness of the surface is achieved even at the conventional oxidant concentration level.
- damage due to the abrasive is introduced into the silicon carbide substrate when the surface layer region is removed by the abrasive.
- This damage has a small effect on the smoothness of the main surface, it affects the quality of the semiconductor layer formed on the main surface.
- This damage is manifested as a linear etch pit group by etching with the chlorine gas.
- the concentration of permanganate ions contained in the CMP polishing liquid to a higher level than that of the prior art, specifically, a concentration exceeding 5% by mass, the oxidation rate is increased. The introduction of damage is suppressed.
- the concentration of permanganate ions contained in the CMP polishing liquid may be set to a concentration exceeding 10 mass%.
- the polishing liquid may be passed through a PTFE resin filter having a pore diameter of 5 ⁇ m or less.
- the temperature of the polishing liquid may be 35 ° C. or higher.
- the polishing liquid may contain sodium permanganate.
- the concentration of permanganate ions in the polishing liquid may be 40% by mass or less. Even if the concentration of permanganate ions is increased to a level exceeding 40% by mass, the effect of suppressing damage introduced into the silicon carbide substrate is saturated. Therefore, the concentration of permanganate ions may be set to 40% by mass or less in consideration of the damage caused by the oxidizing agent on the polishing equipment.
- the polishing liquid may contain a polishing agent made of a metal oxide.
- a metal oxide having a higher polishing power than SiO 2 (silicon dioxide), which is widely used as an abrasive (abrasive grain), as an abrasive in the method for manufacturing a silicon carbide substrate of the present disclosure linear etch pits are obtained. A high polishing rate can be achieved while suppressing the group.
- the metal oxide constituting the abrasive for example, Al 2 O 3 (aluminum oxide), Cr 2 O 3 (chromium oxide), ZrO 2 (zirconium oxide) and the like can be employed.
- the polishing liquid may have a pH (power of Hydrogen) of less than 5.
- the method for manufacturing a silicon carbide substrate may further include a step of cleaning the main surface polished by chemical mechanical polishing.
- the step of cleaning the main surface may include a step of cleaning the main surface using hydrochloric acid as a cleaning liquid.
- the silicon carbide may have a hexagonal crystal structure.
- the main surface may be a crystal surface having an off angle of less than 8 ° with respect to the Si surface.
- silicon carbide substrate 1 in the present embodiment has a disc shape and has a main surface 1A.
- the total length of the linear etch pit groups observed on the main surface 1A is equal to or smaller than the substrate diameter. That is, for example, when the substrate diameter is 100 mm, the total length of the linear etch pit group is 100 mm or less.
- the substrate diameter is 150 mm, the total length of the linear etch pit group is 150 mm or less.
- the linear etch pit group can be confirmed by, for example, observing the main surface 1A etched with chlorine gas with a differential interference microscope.
- the etch rate is lower than when etched with chlorine gas.
- the total length of the linear etch pit groups observed on the main surface 1A when the main surface 1A is etched with KOH is about the substrate diameter, it is observed when the main surface 1A is etched with chlorine gas.
- the total length of the linear etch pit group may exceed the substrate diameter.
- the substrate diameter of the silicon carbide substrate 1 is preferably 4 inches or more (100 mm or more) in consideration of the manufacturing efficiency of the semiconductor device.
- the substrate diameter of silicon carbide substrate 1 may be, for example, 6 inches or more (150 mm or more).
- Main surface 1A is a surface on which a semiconductor layer made of silicon carbide is to be formed by epitaxial growth when a semiconductor device using silicon carbide substrate 1 is manufactured. Silicon carbide constituting silicon carbide substrate 1 has, for example, a hexagonal crystal structure.
- Main surface 1A is, for example, a crystal plane having an off angle of less than 8 ° with respect to the Si surface.
- silicon carbide substrate 1 is a silicon carbide substrate capable of forming a high-quality semiconductor layer on main surface 1A.
- a raw material substrate preparation step is first performed as a step (S10).
- this step (S10) an ingot made of, for example, hexagonal silicon carbide is sliced to obtain raw material substrate 1 having a disk shape.
- the ingot can be grown in the ⁇ 0001> direction, for example.
- the ingot is sliced so that, for example, a main surface 1A having an off angle of 8 ° or less with respect to the (0001) plane is formed.
- the MP step is performed as a step (S20).
- mechanical polishing (MP) using hard abrasive grains is performed on the main surface 1A of the raw material substrate 1 prepared in the step (S10). Thereby, the roughness of 1 A of main surfaces of the raw material board
- substrate 1 is reduced.
- a CMP step is performed as a step (S30).
- CMP chemical mechanical polishing
- S30 chemical mechanical polishing
- CMP can be performed using a polishing apparatus as described below.
- polishing apparatus 50 used in the present embodiment includes a surface plate 51, a holder 52, and a polishing liquid supply unit 53.
- Surface plate 51 includes a body portion 51B having a disk shape, and a shaft portion 51C that is connected to the main body portion 51B so as to include the center axis A 1 of the body portion 51B.
- One main surface of the main body 51B is a polished surface 51A.
- the shaft portion 51C of the surface plate 51 is connected to a driving device (not shown) such as a motor. It is driven by the driving device, the main body 51B and is rotatable in the direction of arrow ⁇ to the center axis A 1 as the rotation axis.
- Holder 52 includes a body portion 52B having a disk shape, and a shaft portion 52C that is connected to the main body portion 52B so as to include the central axis A 2 of the main body portion 52B.
- the diameter of the main body 52B of the holder 52 is smaller than the diameter of the main body 51B of the surface plate 51.
- One main surface of the main body 52B is a holding surface 52A that holds the raw material substrate 1.
- the shaft portion 52C of the holder 52 is connected to a driving device (not shown) such as a motor. It is driven by the driving device, the main body 52B and is rotatable on the central axis A 2 in the direction of arrow ⁇ as a rotation axis.
- the central axis A 2 of the center axis A 1 and the holder 52 of the plate 51 are parallel. That is, the main body portion 52B of the holder 52 and the main body portion 51B of the surface plate 51 are rotatable in the circumferential direction about a parallel and different central axis as a rotation axis.
- the direction of rotation of the main body 52B of the holder 52 may be the same as the direction of rotation of the main body 51B of the surface plate 51, as shown in FIG.
- the holding surface 52A of the holder 52 and the polishing surface 51A of the surface plate 51 face each other.
- the polishing liquid supply unit 53 is disposed on the polishing surface 51A of the surface plate 51 apart from the surface plate 51, and supplies the polishing liquid (slurry) 91 onto the polishing surface 51A.
- the polishing liquid supply unit 53 is connected to, for example, a tank (not shown) that holds the polishing liquid 91 and supplies the polishing liquid 91 onto the polishing surface 51A with a desired supply amount.
- the raw material substrate 1 that has been mechanically polished in the step (S20) is attached to and held on a holding surface 52A of the holder 52, for example.
- raw material substrate 1 is held by holder 52 such that main surface 1B opposite to main surface 1A on which a semiconductor layer made of silicon carbide is to be formed by epitaxial growth in silicon carbide substrate 1 is in contact with holding surface 52A. Is done. Thereby, 1 A of main surfaces in which a semiconductor layer should be formed opposes polishing surface 51A.
- surface plate 51 and the holder 52 rotates the center axis A 1 and the central axis A 2 as a rotation axis, respectively. And the space
- the polishing liquid 91 is supplied from the polishing liquid supply unit 53 onto the polishing surface 51A.
- the main surface 1A of the raw material substrate 1 is subjected to chemical mechanical polishing. More specifically, the region including the main surface 1A is oxidized by the oxidizing agent contained in the polishing liquid 91, and the region is removed by the polishing agent contained in the polishing liquid 91, whereby CMP proceeds.
- the soot polishing liquid 91 contains permanganate ions as an oxidizing agent.
- the concentration of permanganate ions exceeds 5% by weight.
- the concentration of permanganate ions is, for example, 10% by mass or more and 20% by mass or less. Thereby, a sufficient oxidation rate of the raw material substrate 1 by the polishing liquid 91 is ensured.
- the concentration of permanganate ions contained in the polishing liquid 91 may be 40% by mass or less. Thereby, the damage by the oxidizing agent to the polishing apparatus 50 can be suppressed.
- Permanganate ions can be derived from, for example, Na (sodium) salts. That is, sodium permanganate may be added to the polishing liquid as an oxidizing agent. By doing so, it becomes easy to achieve the concentration of the permanganate ion at room temperature.
- the permanganate ion may be derived from, for example, a K (potassium) salt.
- the soot polishing liquid 91 may have been passed through a PTFE (polytetrafluoroethylene) resin filter having a pore diameter of 5 ⁇ m or less.
- the temperature of the polishing liquid 91 may be 35 ° C. or higher. This is because the polishing efficiency is improved.
- the polishing liquid 91 includes abrasive grains (free abrasive grains) made of a metal oxide as an abrasive, for example.
- the polishing liquid 91 may include, for example, one or more kinds of abrasive grains selected from the group consisting of abrasive grains made of Al 2 O 3 , abrasive grains made of Cr 2 O 3, and abrasive grains made of ZrO 2. Good.
- a metal oxide having a higher polishing power than that of SiO 2 as an abrasive By using a metal oxide having a higher polishing power than that of SiO 2 as an abrasive, a high polishing rate can be achieved while suppressing linear etch pit groups.
- the average particle size of the abrasive is preferably less than 0.5 ⁇ m.
- the pH of the soot polishing liquid 91 can be less than 5. By making the polishing liquid 91 sufficiently acidic, a high polishing rate can be achieved while suppressing the linear etch pit group.
- the polishing liquid 91 may achieve the above pH value, for example, by containing nitric acid.
- the polishing liquid 91 may contain a surfactant.
- the viscosity of the polishing liquid 91 can be, for example, 0.002 Pa ⁇ s or more and 0.2 Pa ⁇ s or less.
- a cleaning step is performed as a step (S40).
- the main surface 1A of the raw material substrate 1 subjected to the chemical mechanical polishing in the step (S30) is cleaned.
- silicon carbide substrate 1 of the present embodiment is obtained.
- the main surface 1A can be cleaned, for example, using hydrochloric acid as a cleaning liquid.
- washing with water pure water
- the polishing liquid 91 adhered to the raw material substrate 1 in the step (S30) is removed.
- Mn (manganese) contained in the polishing liquid 91 can be prevented from being taken into the oxide film formed on the surface of the silicon carbide substrate 1.
- the concentration of permanganate ions contained in CMP polishing liquid 91 is set to a concentration exceeding 10 mass%.
- silicon carbide substrate 1 becomes a silicon carbide substrate capable of forming a high-quality semiconductor layer on main surface 1A.
- Silicon carbide substrate In the same procedure as in the above embodiment, an experiment was performed in which the silicon carbide substrate 1 was produced by changing the concentration of permanganate ions in the polishing liquid used for CMP, and the linear etch pit group was observed.
- the experimental procedure is as follows.
- a plurality of raw material substrates 1 having a substrate diameter of 100 mm were prepared, and mechanical polishing was performed under the same conditions (steps (S10) and (S20)).
- CMP is performed on the main surface 1A of the mechanically polished raw material substrate 1 using a polishing liquid 91 containing permanganate ions as an oxidizing agent, ZrO 2 abrasive grains as an abrasive and nitric acid as a pH adjusting liquid. did.
- the surface pressure was 600 g / cm 2
- the polishing time was 1 hour
- the pH was 4
- the amount of ZrO 2 abrasive grains added was 15 g / L
- only the concentration of permanganate ions in the polishing liquid 91 was changed.
- the obtained sample was etched with chlorine gas in the following procedure.
- the sample was inserted into the reaction tube, heated to 900 ° C., and the pressure was reduced to 50 Pa.
- chlorine gas was introduced into the reaction tube at a flow rate of 0.5 slm for 5 minutes to etch the sample.
- the pressure in the reaction tube is reduced to 50 Pa and held for 30 minutes, and then a mixed gas containing 10 vol% oxygen and 90 vol% nitrogen is introduced into the reaction tube at a flow rate of 2.5 slm for 10 minutes.
- the surface carbonized layer by chlorine gas etching was removed from the sample.
- main surface 1A of the obtained sample (silicon carbide substrate 1) was observed with a differential interference microscope, and the total length of the linear etch pit group was investigated.
- FIG. 4 is a photograph of an example of the observed linear etch pit group. Etch pits formed by etching with chlorine gas are arranged in a line to form a linear etch pit group 19. Each sample was observed, and the relationship between the permanganate ion concentration of the polishing liquid 91 in CMP, the polishing rate, and the total length of the linear etch pit group was investigated. The survey results are shown in FIGS.
- the horizontal axis represents the permanganate ion concentration
- the vertical axis represents the polishing rate.
- the horizontal axis represents the permanganate ion concentration
- the vertical axis represents the total length of the linear etch pit groups observed in the main surface 1A. Referring to FIG. 6, in the region where the concentration of permanganate ions is up to 10% by mass, the total length of the linear etch pit group is rapidly reduced as the concentration of permanganate ions is increased. And in the range whose concentration of a permanganate ion is 10 mass% or more, the total length of a linear etch pit group is the board
- the polishing rate increases as the concentration of permanganate ions increases. Therefore, it can be said that the concentration of permanganate ions contained in the polishing liquid 91 should be 10% by mass or more.
- the concentration of permanganate ions contained in the polishing liquid 91 is preferably 40% by mass or less. Furthermore, referring to FIG. 5, from the viewpoint of increasing the polishing rate, the concentration of permanganate ions is preferably 15% by mass or more. In consideration of damage to the polishing apparatus due to an increase in the concentration of permanganate ions, the concentration of permanganate ions can be set to 15% by mass or more and 20% by volume or less, for example.
- the concentration of permanganate ions is preferably 20% by mass or more. Moreover, it can be said that the concentration of permanganate ions is preferably 35% by mass or less from the viewpoint of emphasizing the reduction of the total length of the linear etch pit group.
- a linear etch pit group and a crystal defect are distinguished by the following method.
- PL (Photo Luminescence) imaging measurement is performed on the surface opposite to the surface subjected to chlorine etching. Crystal defects are detected by PL imaging measurement.
- the parameters for the PL imaging measurement are exemplified below.
- the wavelength of the excitation light is 313 nm.
- the light receiving filter is a band-pass filter having a wavelength of 390 nm and has a function of passing only light having a wavelength of 390 nm.
- the irradiation time of the excitation light is 5 seconds.
- the measurement area covers the entire surface with a pitch of 2.3 mm square.
- a linear etch pit group is detected by subtracting information on crystal defects obtained by PL imaging from information obtained by a differential interference microscope.
- the defect rate was less than 30%.
- the defect rate reached 37%.
- the defect rate exceeded 60% in the sample whose total length of the linear etch pit group was 240 mm. That is, when the total length of the linear etch pit group exceeds 150 mm, the defect rate increases rapidly. Therefore, occurrence of defects can be suppressed when the total length of the linear etch pit group is equal to or smaller than the substrate diameter.
- a silicon carbide semiconductor device can be manufactured using the silicon carbide substrate 1 of the present disclosure. Since the silicon carbide semiconductor device manufactured using the silicon carbide substrate 1 of the present disclosure includes a high-quality semiconductor layer on the main surface of the silicon carbide substrate 1, it is effective from the viewpoint of yield and reliability.
- the present disclosure can be particularly advantageously applied to a silicon carbide substrate that is required to form a high-quality semiconductor layer made of silicon carbide on the main surface and a method for manufacturing the same.
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Abstract
Description
具体的には、主面に観察される線状エッチピット群の長さの合計値である線状エッチピット群の総長さが基板径以下である場合、当該主面上にエピタキシャル成長により形成される半導体層が、ダイオード、トランジスタなどの半導体装置の作製に適した高品質なものとなる。本開示の炭化珪素基板においては、主面に観察される線状エッチピット群の総長さが基板径以下である。その結果、本開示の炭化珪素基板によれば、主面上に高品質な半導体層を形成可能な炭化珪素基板を提供することができる。
ここで、従来の酸化剤の濃度レベルであっても、表面の平滑性を確保可能な酸化レートは達成される。しかし、従来のCMPにおける酸化レートでは、研磨剤による表層領域の除去に際して、炭化珪素基板に研磨剤によるダメージが導入される。このダメージは、主面の平滑性に与える影響は小さいものの、主面上に形成される半導体層の品質に影響を与える。このダメージは、上記塩素ガスによるエッチングにより線状エッチピット群として顕在化する。そして、CMPの研磨液に含まれる過マンガン酸イオンの濃度を従来よりも高いレベルの濃度、具体的には5質量%を超える濃度に設定することにより、酸化レートが高くなり、上記研磨剤によるダメージの導入が抑制される。
研磨剤を構成する金属酸化物としては、たとえばAl2O3(酸化アルミニウム)、Cr2O3(酸化クロム)、ZrO2(酸化ジルコニウム)などを採用することができる。
次に、本開示にかかる炭化珪素基板の一実施の形態を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない場合がある。
SiO2に比べて研磨力の高い金属酸化物を研磨剤に採用することにより、線状エッチピット群を抑制しつつ、高い研磨レートを達成することができる。研磨剤の平均粒径は、0.5μm未満とすることが好ましい。
上記実施の形態と同様の手順において、CMPに用いる研磨液の過マンガン酸イオンの濃度を変化させて炭化珪素基板1を作製し、線状エッチピット群を観察する実験を行った。実験の手順は以下の通りである。
図7に示されるように、線状エッチピット群の総長さとデバイスの不良率には関係が認められる。デバイスの作成には、直径が150mmの炭化珪素基板1が用いられた。炭化珪素基板1上にチップサイズ6mm角のMOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)デバイスが形成された。不良の判断は、ゲート電極とソース電極間に0Vから20Vまで電圧を印加したときに10nA以上のリーク電流が発生すること、あるいはゲート電極とソース電極間がショートし、電圧を印加できない状態になることである。
1A 主面
1B 主面
19 線状エッチピット群
50 研磨装置
51 定盤
51A 研磨面
51B 本体部
51C 軸部、
52 ホルダ
52A 保持面
52B 本体部
52C 軸部
53 研磨液供給部
91 研磨液
Claims (12)
- 炭化珪素からなり、
主面を塩素ガスでエッチングした場合に、前記主面に観察される線状エッチピット群の総長さが基板径以下である、炭化珪素基板。 - 前記炭化珪素は六方晶の結晶構造を有し、
前記主面は、Si面に対するオフ角が8°未満の結晶面である、請求項1に記載の炭化珪素基板。 - 原料基板を準備する工程と、
前記原料基板の主面を化学機械研磨により研磨する工程と、を備え、
前記主面を化学機械研磨により研磨する工程は、過マンガン酸イオンの濃度が5質量%を超える研磨液を用いて前記主面を化学機械研磨する工程を含む、炭化珪素基板の製造方法。 - 前記過マンガン酸イオンの濃度は10質量%以上である、請求項3に記載の炭化珪素基板の製造方法。
- 前記研磨液の温度は、35℃以上である、請求項3に記載の炭化珪素基板の製造方法。
- 前記研磨液は、過マンガン酸ナトリウムまたは過マンガン酸カリウムを含む、請求項3に記載の炭化珪素基板の製造方法。
- 前記研磨液の過マンガン酸イオンの濃度は40質量%以下である、請求項3に記載の炭化珪素基板の製造方法。
- 前記研磨液は金属酸化物からなる研磨剤を含む、請求項3から7のいずれか1項に記載の炭化珪素基板の製造方法。
- 前記研磨液のpHは5未満である、請求項3~8のいずれか1項に記載の炭化珪素基板の製造方法。
- 化学機械研磨により研磨された前記主面を洗浄する工程をさらに備え、
前記主面を洗浄する工程は、塩酸を洗浄液として前記主面を洗浄する工程を含む、請求項3~9のいずれか1項に記載の炭化珪素基板の製造方法。 - 前記炭化珪素は六方晶の結晶構造を有し、
前記主面は、Si面に対するオフ角が8°未満の結晶面である、請求項3~10のいずれか1項に記載の炭化珪素基板の製造方法。 - 請求項1または2に記載の炭化珪素基板を用いる炭化珪素半導体装置の製造方法。
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US15/527,121 US10030319B2 (en) | 2014-11-27 | 2015-11-04 | Silicon carbide substrate, method for producing same, and method for manufacturing silicon carbide semiconductor device |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020203568A1 (ja) * | 2019-03-29 | 2020-10-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法および研磨方法 |
WO2022196292A1 (ja) * | 2021-03-16 | 2022-09-22 | 信越半導体株式会社 | 炭化珪素単結晶ウェーハの結晶欠陥評価方法 |
WO2023054386A1 (ja) * | 2021-09-30 | 2023-04-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2023054385A1 (ja) * | 2021-09-30 | 2023-04-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2023189512A1 (ja) * | 2022-03-30 | 2023-10-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6292926B2 (ja) * | 2013-11-08 | 2018-03-14 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP6585799B1 (ja) * | 2018-10-15 | 2019-10-02 | 昭和電工株式会社 | SiC基板の評価方法及びSiCエピタキシャルウェハの製造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002226300A (ja) * | 2000-04-07 | 2002-08-14 | Hoya Corp | 炭化珪素およびその製造方法 |
JP2008068390A (ja) * | 2006-09-15 | 2008-03-27 | Noritake Co Ltd | 結晶材料の研磨加工方法 |
JP2009091222A (ja) * | 2007-10-11 | 2009-04-30 | Sumitomo Metal Ind Ltd | SiC単結晶の製造方法、SiC単結晶ウエハ及びSiC半導体デバイス |
JP2009238891A (ja) * | 2008-03-26 | 2009-10-15 | Hitachi Metals Ltd | SiC単結晶基板の製造方法 |
JP2011513991A (ja) * | 2008-03-05 | 2011-04-28 | キャボット マイクロエレクトロニクス コーポレイション | 水溶性酸化剤を用いた炭化ケイ素の研磨方法 |
JP2012004270A (ja) * | 2010-06-16 | 2012-01-05 | Sumitomo Electric Ind Ltd | 炭化珪素半導体の洗浄方法、炭化珪素半導体および炭化珪素半導体装置 |
JP2012248569A (ja) * | 2011-05-25 | 2012-12-13 | Asahi Glass Co Ltd | 研磨剤および研磨方法 |
JP2013247329A (ja) * | 2012-05-29 | 2013-12-09 | Mitsui Mining & Smelting Co Ltd | 研摩材スラリー |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4427472B2 (ja) * | 2005-03-18 | 2010-03-10 | 新日本製鐵株式会社 | SiC単結晶基板の製造方法 |
CN101162693B (zh) * | 2006-10-09 | 2011-02-16 | 西安能讯微电子有限公司 | 氮化镓表面低损伤蚀刻 |
CN101649162A (zh) * | 2008-08-15 | 2010-02-17 | 安集微电子(上海)有限公司 | 一种用于化学机械研磨的抛光液 |
CN102301043B (zh) * | 2009-01-30 | 2014-07-23 | 新日铁住金株式会社 | 外延碳化硅单晶基板及其制造方法 |
CN102533124A (zh) * | 2010-12-31 | 2012-07-04 | 上海硅酸盐研究所中试基地 | 碳化硅衬底用抛光液 |
JP5506954B2 (ja) * | 2011-08-29 | 2014-05-28 | 新日鐵住金株式会社 | 炭化珪素単結晶基板 |
CN102888193A (zh) * | 2012-06-25 | 2013-01-23 | 上海应用技术学院 | 一种led衬底片用的蓝宝石或碳化硅晶片的表面处理用的化学机械抛光液及其制备方法 |
JP2014024701A (ja) * | 2012-07-26 | 2014-02-06 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法 |
JP2014027093A (ja) * | 2012-07-26 | 2014-02-06 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法 |
JP2014210690A (ja) * | 2013-04-22 | 2014-11-13 | 住友電気工業株式会社 | 炭化珪素基板の製造方法 |
-
2015
- 2015-11-04 CN CN201580063761.4A patent/CN107002280B/zh active Active
- 2015-11-04 JP JP2016561469A patent/JP6699559B2/ja not_active Expired - Fee Related
- 2015-11-04 CN CN201910475115.9A patent/CN110299403B/zh active Active
- 2015-11-04 US US15/527,121 patent/US10030319B2/en active Active
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-
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- 2018-05-25 US US15/989,373 patent/US10221501B2/en active Active
-
2019
- 2019-05-24 JP JP2019098018A patent/JP6939844B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002226300A (ja) * | 2000-04-07 | 2002-08-14 | Hoya Corp | 炭化珪素およびその製造方法 |
JP2008068390A (ja) * | 2006-09-15 | 2008-03-27 | Noritake Co Ltd | 結晶材料の研磨加工方法 |
JP2009091222A (ja) * | 2007-10-11 | 2009-04-30 | Sumitomo Metal Ind Ltd | SiC単結晶の製造方法、SiC単結晶ウエハ及びSiC半導体デバイス |
JP2011513991A (ja) * | 2008-03-05 | 2011-04-28 | キャボット マイクロエレクトロニクス コーポレイション | 水溶性酸化剤を用いた炭化ケイ素の研磨方法 |
JP2009238891A (ja) * | 2008-03-26 | 2009-10-15 | Hitachi Metals Ltd | SiC単結晶基板の製造方法 |
JP2012004270A (ja) * | 2010-06-16 | 2012-01-05 | Sumitomo Electric Ind Ltd | 炭化珪素半導体の洗浄方法、炭化珪素半導体および炭化珪素半導体装置 |
JP2012248569A (ja) * | 2011-05-25 | 2012-12-13 | Asahi Glass Co Ltd | 研磨剤および研磨方法 |
JP2013247329A (ja) * | 2012-05-29 | 2013-12-09 | Mitsui Mining & Smelting Co Ltd | 研摩材スラリー |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020203568A1 (ja) * | 2019-03-29 | 2020-10-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法および研磨方法 |
WO2022196292A1 (ja) * | 2021-03-16 | 2022-09-22 | 信越半導体株式会社 | 炭化珪素単結晶ウェーハの結晶欠陥評価方法 |
JP7494768B2 (ja) | 2021-03-16 | 2024-06-04 | 信越半導体株式会社 | 炭化珪素単結晶ウェーハの結晶欠陥評価方法 |
WO2023054386A1 (ja) * | 2021-09-30 | 2023-04-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2023054385A1 (ja) * | 2021-09-30 | 2023-04-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2023189512A1 (ja) * | 2022-03-30 | 2023-10-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
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CN110299403B (zh) | 2022-03-25 |
JP6699559B2 (ja) | 2020-05-27 |
US10221501B2 (en) | 2019-03-05 |
JP6939844B2 (ja) | 2021-09-22 |
JPWO2016084561A1 (ja) | 2017-09-07 |
DE112015005348T5 (de) | 2017-08-10 |
CN107002280A (zh) | 2017-08-01 |
JP2019178062A (ja) | 2019-10-17 |
US10030319B2 (en) | 2018-07-24 |
US20180274129A1 (en) | 2018-09-27 |
CN107002280B (zh) | 2019-06-18 |
CN110299403A (zh) | 2019-10-01 |
US20170335489A1 (en) | 2017-11-23 |
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