CN101162693B - 氮化镓表面低损伤蚀刻 - Google Patents
氮化镓表面低损伤蚀刻 Download PDFInfo
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- CN101162693B CN101162693B CN2006101407561A CN200610140756A CN101162693B CN 101162693 B CN101162693 B CN 101162693B CN 2006101407561 A CN2006101407561 A CN 2006101407561A CN 200610140756 A CN200610140756 A CN 200610140756A CN 101162693 B CN101162693 B CN 101162693B
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- etching
- gallium nitride
- passivation layer
- damage
- sicl4
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- 238000005530 etching Methods 0.000 title claims abstract description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 238000001020 plasma etching Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 7
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 230000006378 damage Effects 0.000 abstract description 13
- 238000001312 dry etching Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 241000234282 Allium Species 0.000 abstract 1
- SURLGNKAQXKNSP-DBLYXWCISA-N chlorin Chemical compound C\1=C/2\N/C(=C\C3=N/C(=C\C=4NC(/C=C\5/C=CC/1=N/5)=CC=4)/C=C3)/CC\2 SURLGNKAQXKNSP-DBLYXWCISA-N 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 208000027418 Wounds and injury Diseases 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 208000014674 injury Diseases 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101100427503 Human herpesvirus 6A (strain GS) U30 gene Proteins 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- YFNCATAIYKQPOO-UHFFFAOYSA-N thiophanate Chemical compound CCOC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OCC YFNCATAIYKQPOO-UHFFFAOYSA-N 0.000 description 1
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- Junction Field-Effect Transistors (AREA)
Abstract
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CN2006101407561A CN101162693B (zh) | 2006-10-09 | 2006-10-09 | 氮化镓表面低损伤蚀刻 |
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CN2006101407561A CN101162693B (zh) | 2006-10-09 | 2006-10-09 | 氮化镓表面低损伤蚀刻 |
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CN101162693A CN101162693A (zh) | 2008-04-16 |
CN101162693B true CN101162693B (zh) | 2011-02-16 |
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CN2006101407561A Active CN101162693B (zh) | 2006-10-09 | 2006-10-09 | 氮化镓表面低损伤蚀刻 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5857415B2 (ja) * | 2011-02-24 | 2016-02-10 | 富士通株式会社 | 半導体装置の製造方法 |
CN102339748B (zh) * | 2011-11-01 | 2013-08-14 | 中国科学院微电子研究所 | 降低hemt器件栅槽刻蚀损伤的方法 |
CN103094434B (zh) * | 2012-11-27 | 2015-11-18 | 南京大学 | ICP刻蚀GaN基多量子阱制备纳米阵列图形的方法 |
CN105814244B (zh) * | 2013-12-20 | 2018-06-29 | 日本碍子株式会社 | 包含氮化镓层的基板及其制造方法 |
JP6699559B2 (ja) * | 2014-11-27 | 2020-05-27 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法、および炭化珪素半導体装置の製造方法 |
CN107305841B (zh) * | 2016-04-19 | 2020-04-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | 半绝缘自支撑氮化镓材料表面欧姆接触的制备方法 |
CN107516633B (zh) * | 2017-04-17 | 2020-08-28 | 中国电子科技集团公司第五十五研究所 | 一种氮化镓刻蚀方法 |
CN114242583B (zh) * | 2021-12-22 | 2023-03-21 | 江苏第三代半导体研究院有限公司 | AlGaN材料的刻蚀方法及其应用 |
Citations (1)
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CN1630042A (zh) * | 2003-12-18 | 2005-06-22 | 上海华虹Nec电子有限公司 | 一种金属配线的多步干法刻蚀方法 |
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CN1630042A (zh) * | 2003-12-18 | 2005-06-22 | 上海华虹Nec电子有限公司 | 一种金属配线的多步干法刻蚀方法 |
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