CN113811643B - 碳化硅衬底 - Google Patents

碳化硅衬底 Download PDF

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Publication number
CN113811643B
CN113811643B CN202080034953.3A CN202080034953A CN113811643B CN 113811643 B CN113811643 B CN 113811643B CN 202080034953 A CN202080034953 A CN 202080034953A CN 113811643 B CN113811643 B CN 113811643B
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China
Prior art keywords
main surface
silicon carbide
carbide substrate
area
atoms
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CN202080034953.3A
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English (en)
Chinese (zh)
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CN113811643A (zh
Inventor
冲田恭子
本家翼
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202080034953.3A 2019-05-17 2020-04-01 碳化硅衬底 Active CN113811643B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-093882 2019-05-17
JP2019093882 2019-05-17
PCT/JP2020/015006 WO2020235225A1 (ja) 2019-05-17 2020-04-01 炭化珪素基板

Publications (2)

Publication Number Publication Date
CN113811643A CN113811643A (zh) 2021-12-17
CN113811643B true CN113811643B (zh) 2024-03-22

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CN202080034953.3A Active CN113811643B (zh) 2019-05-17 2020-04-01 碳化硅衬底

Country Status (5)

Country Link
US (1) US12071708B2 (https=)
JP (1) JPWO2020235225A1 (https=)
CN (1) CN113811643B (https=)
TW (1) TW202043557A (https=)
WO (1) WO2020235225A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113825863B (zh) * 2019-05-17 2024-03-22 住友电气工业株式会社 碳化硅衬底
JP7600662B2 (ja) * 2020-12-17 2024-12-17 住友電気工業株式会社 炭化珪素基板の製造方法
CN117545711A (zh) * 2021-04-20 2024-02-09 奇跃公司 超声处理纳米几何形状控制过程和方法

Citations (7)

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JPH11162917A (ja) * 1997-09-10 1999-06-18 Toshiba Corp 半導体装置の製造方法及び処理液の生成装置
JP2008280207A (ja) * 2007-05-10 2008-11-20 Matsushita Electric Ind Co Ltd ＳｉＣ単結晶基板の製造方法
JP2010004073A (ja) * 2009-09-29 2010-01-07 Tadahiro Omi 炭化珪素製品、その製造方法、及び、炭化珪素製品の洗浄方法
CN104114755A (zh) * 2012-04-02 2014-10-22 住友电气工业株式会社 碳化硅衬底、半导体器件及其制造方法
CN104112652A (zh) * 2013-04-22 2014-10-22 住友电气工业株式会社 制造碳化硅衬底的方法
JP2016056057A (ja) * 2014-09-09 2016-04-21 日立金属株式会社 サファイア基板およびその製造方法
CN106796877A (zh) * 2014-10-23 2017-05-31 住友电气工业株式会社 碳化硅衬底和用于制造所述碳化硅衬底的方法

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US6825123B2 (en) * 2003-04-15 2004-11-30 Saint-Goban Ceramics & Plastics, Inc. Method for treating semiconductor processing components and components formed thereby
JP4787089B2 (ja) * 2006-06-26 2011-10-05 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP4924451B2 (ja) * 2008-01-28 2012-04-25 セイコーエプソン株式会社 洗浄方法及び半導体装置の製造方法
JP5469840B2 (ja) * 2008-09-30 2014-04-16 昭和電工株式会社 炭化珪素単結晶基板の製造方法
US20130174868A1 (en) 2010-09-27 2013-07-11 Ums Co., Ltd. Method for purifying alkaline treatment fluid for semiconductor substrate and a purification apparatus
US9279192B2 (en) * 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6623759B2 (ja) * 2014-09-08 2019-12-25 住友電気工業株式会社 炭化珪素単結晶基板およびその製造方法
CN110299403B (zh) * 2014-11-27 2022-03-25 住友电气工业株式会社 碳化硅基板
JP6295969B2 (ja) * 2015-01-27 2018-03-20 日立金属株式会社 単結晶炭化珪素基板、単結晶炭化珪素基板の製造方法、および単結晶炭化珪素基板の検査方法
CN108701623B (zh) * 2015-11-05 2022-10-04 米朋克斯株式会社 基板评价方法
JP6128262B2 (ja) * 2016-05-20 2017-05-17 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
CN109321980B (zh) * 2018-10-16 2019-11-19 山东天岳先进材料科技有限公司 一种高平整度、低损伤大直径单晶碳化硅衬底

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162917A (ja) * 1997-09-10 1999-06-18 Toshiba Corp 半導体装置の製造方法及び処理液の生成装置
JP2008280207A (ja) * 2007-05-10 2008-11-20 Matsushita Electric Ind Co Ltd ＳｉＣ単結晶基板の製造方法
JP2010004073A (ja) * 2009-09-29 2010-01-07 Tadahiro Omi 炭化珪素製品、その製造方法、及び、炭化珪素製品の洗浄方法
CN104114755A (zh) * 2012-04-02 2014-10-22 住友电气工业株式会社 碳化硅衬底、半导体器件及其制造方法
CN104112652A (zh) * 2013-04-22 2014-10-22 住友电气工业株式会社 制造碳化硅衬底的方法
JP2016056057A (ja) * 2014-09-09 2016-04-21 日立金属株式会社 サファイア基板およびその製造方法
CN106796877A (zh) * 2014-10-23 2017-05-31 住友电气工业株式会社 碳化硅衬底和用于制造所述碳化硅衬底的方法

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卞大勇 ; .电感耦合等离子体原子发射光谱法测定高含量碳化硅表面6种杂质成分.冶金分析.2018,(05),全文. *

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Publication number Publication date
CN113811643A (zh) 2021-12-17
WO2020235225A1 (ja) 2020-11-26
JPWO2020235225A1 (https=) 2020-11-26
US20220220638A1 (en) 2022-07-14
US12071708B2 (en) 2024-08-27
TW202043557A (zh) 2020-12-01

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