JP2023029930A - ウエハの洗浄方法及び不純物が低減されたウエハ - Google Patents
ウエハの洗浄方法及び不純物が低減されたウエハ Download PDFInfo
- Publication number
- JP2023029930A JP2023029930A JP2022191892A JP2022191892A JP2023029930A JP 2023029930 A JP2023029930 A JP 2023029930A JP 2022191892 A JP2022191892 A JP 2022191892A JP 2022191892 A JP2022191892 A JP 2022191892A JP 2023029930 A JP2023029930 A JP 2023029930A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cleaning
- less
- content
- cleaned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title abstract description 161
- 238000000034 method Methods 0.000 title abstract description 67
- 239000012535 impurity Substances 0.000 title abstract description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 28
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 9
- 229910052791 calcium Inorganic materials 0.000 claims description 9
- 239000011575 calcium Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 238000004458 analytical method Methods 0.000 claims description 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 238000005201 scrubbing Methods 0.000 abstract description 81
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 27
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 22
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 18
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 229910021529 ammonia Inorganic materials 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 172
- 230000008569 process Effects 0.000 description 49
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 34
- 125000004429 atom Chemical group 0.000 description 20
- 238000005498 polishing Methods 0.000 description 19
- 239000008367 deionised water Substances 0.000 description 17
- 229910021641 deionized water Inorganic materials 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000007788 liquid Substances 0.000 description 13
- 229910001868 water Inorganic materials 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000001680 brushing effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000009210 therapy by ultrasound Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
洗浄対象のウエハを、回転速度が200rpm以下になるようにブラシ処理する過程を含むことで、ブラシ洗浄されたウエハを設けるスクラビングステップと;
前記ブラシ洗浄されたウエハを洗浄液で洗浄し、洗浄されたベアウエハを設ける洗浄ステップと;を含み、
前記洗浄ステップは、1次洗浄ステップ及び2次洗浄ステップを順に含み、
前記スクラビングステップは285秒以上行われ、
前記1次洗浄ステップは、アンモニア及び過酸化水素を含む第1洗浄液で前記ブラシ洗浄されたウエハを洗浄して、1次洗浄されたウエハを設けるステップであり、
前記2次洗浄ステップは、塩酸及び過酸化水素を含む第2洗浄液で前記1次洗浄されたウエハを洗浄するステップであってもよい。
前記洗浄されたベアウエハの一面は、珪素原子層が表面に現れるSi面を含むことができる。
前記洗浄対象のウエハの回転速度は1rpm~50rpmであり、
前記ブラシの回転速度は10rpm以上であってもよい。
前記洗浄対象のウエハを、水を含む第1スクラビング洗浄液と共に、回転速度が200rpm以下になるようにブラシ処理して、第1スクラビング処理されたウエハを設ける第1スクラビングステップと;
前記第1スクラビング処理されたウエハを、アンモニア水を含む第2スクラビング洗浄液と共に、200rpm以下の回転速度でブラシ処理して、第2スクラビング処理されたウエハを設ける第2スクラビングステップと;
前記第2スクラビング処理されたウエハを、水を含む第3スクラビング洗浄液と共に、200rpm以下の回転速度でブラシ処理して、ブラシ洗浄されたウエハを設ける第3スクラビングステップと;を含み、
前記第1スクラビングステップ及び第3スクラビングステップはそれぞれ100秒以上、第2スクラビングステップは85秒以上行われてもよい。
前記ブラシ洗浄されたウエハに10KHz~300KHzの超音波を加えて第1a洗浄処理されたウエハを設ける第1a洗浄過程と;
前記第1a洗浄処理されたウエハに0.1MHz~20MHzの超音波を加える第1b洗浄過程と;を含み、
前記第1a洗浄過程及び第1b洗浄過程は、それぞれ220秒以上行われてもよい。
4H構造の炭化珪素を含み、
一面は、カルシウム含量10ppb以下、鉄含量1ppb以下、ニッケル含量0.1ppb以下及び銅含量1ppb以下で含まれてもよい。
T-XRF分析結果により得られた前記一面でのカルシウム含量が8atoms/cm2以下、鉄含量が0.1atoms/cm2以下、ニッケル含量が0.2atoms/cm2以下、及び銅含量が0.1atoms/cm2以下であってもよい。
T-XRF分析結果により得られた前記一面でのマンガン含量が18atoms/cm2以下であり、亜鉛含量が1.6atoms/cm2以下であってもよい。
前記によるベアウエハと;
前記ベアウエハの一面上に配置されたエピタキシャル層と;
前記エピタキシャル層を挟んで前記ベアウエハと反対側に配置されたバリア領域と;
前記エピタキシャル層と接するソース電極;及び前記バリア領域上に配置されたゲート電極と;
前記ベアウエハの他面上に配置されたドレイン電極と;を含むことができる。
上記の目的を達成するために、具現例に係るウエハの洗浄方法は、
洗浄対象のウエハを、回転速度が200rpm以下になるようにブラシ処理する過程を含むことで、ブラシ洗浄されたウエハを設けるスクラビングステップと、
前記ブラシ洗浄されたウエハを洗浄液で洗浄し、洗浄されたベアウエハを設ける洗浄ステップとを含み、
前記洗浄ステップは、1次洗浄ステップ及び2次洗浄ステップを順に含み、
前記1次洗浄ステップは、アンモニア及び過酸化水素を含む第1洗浄液で前記ブラシ洗浄されたウエハを洗浄して、1次洗浄されたウエハを設けるステップであり、
前記2次洗浄ステップは、塩酸及び過酸化水素を含む第2洗浄液で前記1次洗浄されたウエハを洗浄するステップであってもよい。
前記第1スクラビング処理されたウエハを、アンモニア水を含む第2スクラビング洗浄液と共に、200rpm以下の回転速度でブラシ処理して、第2スクラビング処理されたウエハを設ける第2スクラビングステップと、
前記第2スクラビング処理されたウエハを、水を含む第3スクラビング洗浄液と共に、200rpm以下の回転速度でブラシ処理して、ブラシ洗浄されたウエハを設ける第3スクラビングステップとを含むことができる。
原料物質300及び前記原料物質と離隔した種結晶を含む反応容器200を準備し、前記原料物質を前記種結晶上に昇華させてインゴットを製造するインゴット製造ステップと、
前記製造されたインゴットを所定のオフ角度及び間隔で複数回切断してウエハを製造し、製造されたウエハを化学的-機械的研磨処理するウエハ製造ステップとを含む方法を通じて製造されてもよい。
前記第1a洗浄処理されたウエハに0.1MHz~20MHzの超音波を加える第1b洗浄過程とを含むことができる。
上記の目的を達成するために、具現例に係るベアウエハ10は、
4H構造の炭化珪素を含み、
総重量を基準として、一面のカルシウム含量が10ppb以下、鉄含量が1ppb以下、ニッケル含量が0.1ppb以下及び銅含量が1ppb以下で含まれてもよい。また、総重量を基準として、カルシウム含量が0.01ppb以上、鉄含量が0.01ppb以上、ニッケル含量が0.01ppb以上及び銅含量が0.01ppb以上で含まれてもよい。
上記の目的を達成するために、具現例に係る半導体素子1は、
前記によるウエハ10と、
前記ウエハの一面上に配置されたエピタキシャル層20と、
前記エピタキシャル層を挟んで前記ウエハと反対側に配置されたバリア領域30と、
前記エピタキシャル層と接するソース電極41、及び前記バリア領域上に配置されたゲート電極42と、
前記ウエハの他面上に配置されたドレイン電極43とを含むことができる。
図2にインゴット製造装置の一例を示したように、反応容器200の内部空間の下部に原料物質300である炭化珪素粉末を装入し、その上部に炭化珪素種結晶を配置した。このとき、炭化珪素種結晶は、直径6インチの4H-SiC結晶からなるものを適用し、C面((000-1)面)が内部空間の下部の炭化珪素原料に向かうように通常の方法により固定した。
前記製造例で製造されたウエハに、図3に示したように配置されたナイロンブラシを備え、ウエハの回転速度を10rpm、ブラシの回転速度を60rpmとするものの、脱イオン水を2L/minで加えながら、第1スクラビングステップを120秒間行った。
前記実施例1において、第1スクラビングステップ、第2スクラビングステップ及び第3スクラビングステップの処理時間をそれぞれ60秒、第1a洗浄過程及び第1b洗浄過程の処理時間をそれぞれ150秒、2次洗浄ステップの処理時間を150秒に変更した以外は、前記実施例1と同様に行った。
前記実施例1において、第1スクラビングステップ、第2スクラビングステップ及び第3スクラビングステップの処理時間をそれぞれ90秒、75秒、90秒、第1a洗浄過程及び第1b洗浄過程の処理時間をそれぞれ200秒、2次洗浄ステップの処理時間を200秒に変更した以外は、前記実施例1と同様に行った。
前記実施例及び比較例のウエハのICP-MS(誘導結合プラズマ質量分析、Agilent社の7900)結果及びT-XRF(X線蛍光分析、rigaku社)結果を表1及び表2に示した。
前記実施例及び比較例で製造されたウエハを介して、カソード層/SiC基板(ウエハ)/SiC N型ドリフト層/アノード層、そして、ドリフト層上にアノード層と接するパッシベーション層を含む複数のショットキーバリアダイオードを設けた。このとき、前記ショットキーバリアダイオードの断面積が、下記の順方向電流条件に応じて、10Aの場合に3.16×2.10mm2、20Aの場合に3.16×4.10mm2、25Aの場合に4.76×3.28mm2になるようにした。
11 一面
12 他面
50 ブラシ
100 炭化珪素インゴット
200 反応容器
210 本体
220 蓋
300 原料
400 断熱材
500 反応チャンバ、石英管
600 加熱手段
700 真空排気装置
800 マスフローコントローラ
810 配管
Claims (5)
- 4H構造の炭化珪素を含み、
一面は、カルシウム含量10ppb以下、鉄含量1ppb以下、ニッケル含量0.1ppb以下及び銅含量1ppb以下で含まれる、ベアウエハ。 - 前記一面は、珪素原子層が現れるSi面を含み、
T-XRF分析結果により得られた前記一面でのカルシウム含量が8atoms/cm2以下、鉄含量が0.1atoms/cm2以下、ニッケル含量が0.2atoms/cm2以下、及び銅含量が0.1atoms/cm2以下である、請求項1に記載のベアウエハ。 - 前記一面は、珪素原子層が現れるSi面を含み、
T-XRF分析結果により得られた前記一面でのマンガン含量が18atoms/cm2以下であり、亜鉛含量が1.6atoms/cm2以下である、請求項2に記載のベアウエハ。 - 前記一面において、マイクロパイプの平均密度が3/cm2以下であり、
前記ベアウエハは、前記炭化珪素インゴットの(0001)面または単結晶成長が始まった面と0°~10°の間に属するオフ角をなすように切断されて形成される、請求項1に記載のベアウエハ。 - 請求項1に記載のベアウエハと、
前記ベアウエハの一面上に配置されたエピタキシャル層と、
前記エピタキシャル層を挟んで前記ベアウエハと反対側に配置されたバリア領域と、
前記エピタキシャル層と接するソース電極、及び前記バリア領域上に配置されたゲート電極と、
前記ベアウエハの他面上に配置されたドレイン電極とを含む、半導体素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020200122141A KR102236398B1 (ko) | 2020-09-22 | 2020-09-22 | 웨이퍼의 세정방법 및 불순물이 저감된 웨이퍼 |
KR10-2020-0122141 | 2020-09-22 | ||
JP2021144360A JP7202032B2 (ja) | 2020-09-22 | 2021-09-03 | ウエハの洗浄方法及び不純物が低減されたウエハ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021144360A Division JP7202032B2 (ja) | 2020-09-22 | 2021-09-03 | ウエハの洗浄方法及び不純物が低減されたウエハ |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2023029930A true JP2023029930A (ja) | 2023-03-07 |
Family
ID=75466475
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021144360A Active JP7202032B2 (ja) | 2020-09-22 | 2021-09-03 | ウエハの洗浄方法及び不純物が低減されたウエハ |
JP2022191892A Pending JP2023029930A (ja) | 2020-09-22 | 2022-11-30 | ウエハの洗浄方法及び不純物が低減されたウエハ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021144360A Active JP7202032B2 (ja) | 2020-09-22 | 2021-09-03 | ウエハの洗浄方法及び不純物が低減されたウエハ |
Country Status (6)
Country | Link |
---|---|
US (1) | US11646209B2 (ja) |
EP (1) | EP3971951A1 (ja) |
JP (2) | JP7202032B2 (ja) |
KR (1) | KR102236398B1 (ja) |
CN (1) | CN114256061A (ja) |
TW (1) | TWI815180B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114308795A (zh) * | 2022-01-13 | 2022-04-12 | 浙江蓝晶芯微电子有限公司 | 一种石英晶体片加工用的表面除尘清洗装置及其使用方法 |
CN114937618A (zh) * | 2022-04-22 | 2022-08-23 | 浙江富芯微电子科技有限公司 | 双面刷洗机和碳化硅晶片表面的清洗方法 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3324181B2 (ja) * | 1993-03-12 | 2002-09-17 | 富士通株式会社 | ウエハの洗浄方法 |
JP3114156B2 (ja) * | 1994-06-28 | 2000-12-04 | 株式会社荏原製作所 | 洗浄方法および装置 |
JP3452676B2 (ja) | 1995-02-15 | 2003-09-29 | 宮崎沖電気株式会社 | 半導体ウエハ面のパーティクルの除去装置及びそれを用いた半導体ウエハ面のパーティクルの除去方法 |
DE69737926T2 (de) * | 1996-10-21 | 2008-04-10 | Ebara Corp. | Reinigungsvorrichtung |
DE19910478C2 (de) | 1998-03-12 | 2002-02-28 | Tokyo Electron Ltd | Substrattransportverfahren und Substratbearbeitungssystem |
JP2002050607A (ja) | 2000-08-03 | 2002-02-15 | Kaijo Corp | 基板処理方法 |
US6620743B2 (en) * | 2001-03-26 | 2003-09-16 | Asm America, Inc. | Stable, oxide-free silicon surface preparation |
JP4046486B2 (ja) | 2001-06-13 | 2008-02-13 | Necエレクトロニクス株式会社 | 洗浄水及びウエハの洗浄方法 |
JP2003109918A (ja) | 2001-09-28 | 2003-04-11 | Internatl Business Mach Corp <Ibm> | 化学機械研磨(cmp)を用いてボンディングのためにウェハを平滑化する装置およびその方法 |
US7685895B2 (en) * | 2004-01-29 | 2010-03-30 | Nas Giken Inc. | Substrate inspection device, substrate inspection method, and recovery tool |
KR100688711B1 (ko) | 2005-06-02 | 2007-03-02 | 동부일렉트로닉스 주식회사 | 웨이퍼의 세정 방법 |
KR100841994B1 (ko) | 2006-12-20 | 2008-06-27 | 주식회사 실트론 | 실리콘 웨이퍼의 산화막 제조 방법 |
KR100936191B1 (ko) * | 2007-08-24 | 2010-01-11 | 하나실리콘(주) | 잉곳 세정 장치 및 잉곳 세정 방법 |
KR100931196B1 (ko) | 2007-10-10 | 2009-12-10 | 주식회사 실트론 | 실리콘 웨이퍼 세정 방법 |
KR20090068640A (ko) * | 2007-12-24 | 2009-06-29 | 주식회사 동부하이텍 | 반도체 소자 제조를 위한 cmp 장치 및 이를 이용한cmp 방법 |
JP2009231628A (ja) | 2008-03-24 | 2009-10-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
KR20100052831A (ko) * | 2008-11-11 | 2010-05-20 | 주식회사 실트론 | 반도체 웨이퍼용 래핑 후 세정 방법 및 장치 |
JP5033168B2 (ja) | 2009-09-29 | 2012-09-26 | 忠弘 大見 | 炭化珪素製品、その製造方法、及び、炭化珪素製品の洗浄方法 |
JP5706671B2 (ja) | 2010-11-15 | 2015-04-22 | 独立行政法人産業技術総合研究所 | 昇華再結晶法による炭化ケイ素単結晶製造用炭化ケイ素粉体及びその製造方法 |
KR101151652B1 (ko) | 2011-03-14 | 2012-06-08 | 지앤피테크놀로지 주식회사 | 웨이퍼 세정장치 |
JP2012209422A (ja) | 2011-03-30 | 2012-10-25 | Sumitomo Electric Ind Ltd | Igbt |
JP5668576B2 (ja) | 2011-04-01 | 2015-02-12 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP5849674B2 (ja) | 2011-12-12 | 2016-02-03 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法 |
JP5781015B2 (ja) * | 2012-05-31 | 2015-09-16 | 三菱電機株式会社 | ウェハ洗浄装置及び洗浄槽の洗浄方法 |
JP2014138086A (ja) | 2013-01-17 | 2014-07-28 | Fujimi Inc | 研磨方法 |
JP6069059B2 (ja) * | 2013-03-22 | 2017-01-25 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US11091370B2 (en) * | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
US10322936B2 (en) * | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
US20160207783A1 (en) * | 2013-05-02 | 2016-07-21 | Melior Innovations, Inc. | High purity polysilocarb derived silicon carbide materials, applications and processes |
JP2015207695A (ja) | 2014-04-22 | 2015-11-19 | 住友電気工業株式会社 | エピタキシャルウエハの製造方法およびエピタキシャルウエハ |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
KR20240125081A (ko) | 2014-09-25 | 2024-08-19 | 멜리어 이노베이션즈, 인크. | 폴리실로카브 계열 탄화 규소 물질, 이의 응용 및 장치 |
KR20160044676A (ko) * | 2014-10-15 | 2016-04-26 | 에스케이이노베이션 주식회사 | 탄화규소 기판의 제조방법 |
JP2016171197A (ja) | 2015-03-12 | 2016-09-23 | 株式会社東芝 | 半導体装置 |
KR101778368B1 (ko) | 2015-08-12 | 2017-09-14 | 에스케이실트론 주식회사 | 웨이퍼의 세정 방법 |
JP6584253B2 (ja) | 2015-09-16 | 2019-10-02 | ローム株式会社 | SiCエピタキシャルウェハ、SiCエピタキシャルウェハの製造装置、SiCエピタキシャルウェハの製造方法、および半導体装置 |
KR101953741B1 (ko) | 2017-05-11 | 2019-03-04 | 무진전자 주식회사 | 웨이퍼 세정장치 및 이를 이용한 웨이퍼 세정방법 |
KR102522272B1 (ko) * | 2018-04-27 | 2023-04-18 | 에이씨엠 리서치 (상하이), 인코포레이티드 | 반도체 웨이퍼 세정 방법 및 장치 |
-
2020
- 2020-09-22 KR KR1020200122141A patent/KR102236398B1/ko active IP Right Grant
-
2021
- 2021-09-03 JP JP2021144360A patent/JP7202032B2/ja active Active
- 2021-09-09 TW TW110133613A patent/TWI815180B/zh active
- 2021-09-17 EP EP21197467.0A patent/EP3971951A1/en active Pending
- 2021-09-17 US US17/477,866 patent/US11646209B2/en active Active
- 2021-09-17 CN CN202111094812.3A patent/CN114256061A/zh active Pending
-
2022
- 2022-11-30 JP JP2022191892A patent/JP2023029930A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US11646209B2 (en) | 2023-05-09 |
KR102236398B1 (ko) | 2021-04-02 |
TW202212006A (zh) | 2022-04-01 |
JP2022051689A (ja) | 2022-04-01 |
US20220093419A1 (en) | 2022-03-24 |
CN114256061A (zh) | 2022-03-29 |
EP3971951A1 (en) | 2022-03-23 |
JP7202032B2 (ja) | 2023-01-11 |
TWI815180B (zh) | 2023-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102373323B1 (ko) | 승화에 의한 대직경 탄화규소 결정을 제조하는 방법 및 관련 반도체 sic 웨이퍼 | |
US9728612B2 (en) | Silicon carbide substrate, semiconductor device and methods for manufacturing them | |
JP2023029930A (ja) | ウエハの洗浄方法及び不純物が低減されたウエハ | |
KR20150074176A (ko) | 평탄한 SiC 반도체 기판 | |
CN113322519B (zh) | 晶片的制造方法 | |
JP2006032655A (ja) | 炭化珪素基板の製造方法 | |
KR102398838B1 (ko) | 웨이퍼의 세정방법 및 불순물이 저감된 웨이퍼 | |
CN111051581B (zh) | 碳化硅外延晶片 | |
KR102229588B1 (ko) | 웨이퍼의 제조방법, 에피택셜 웨이퍼의 제조방법, 이에 따라 제조된 웨이퍼 및 에피택셜 웨이퍼 | |
US20240213329A1 (en) | SiC WAFER AND SiC EPITAXIAL WAFER | |
JP2023001103A (ja) | 炭化珪素ウエハ及び半導体素子 | |
JP2023108951A (ja) | シリコンエピタキシャルウェーハの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221130 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240116 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240416 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20240730 |