TW202043557A - 碳化矽基板 - Google Patents

碳化矽基板 Download PDF

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Publication number
TW202043557A
TW202043557A TW109115746A TW109115746A TW202043557A TW 202043557 A TW202043557 A TW 202043557A TW 109115746 A TW109115746 A TW 109115746A TW 109115746 A TW109115746 A TW 109115746A TW 202043557 A TW202043557 A TW 202043557A
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TW
Taiwan
Prior art keywords
main surface
area
silicon carbide
carbide substrate
concentration
Prior art date
Application number
TW109115746A
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English (en)
Chinese (zh)
Inventor
沖田恭子
本家翼
Original Assignee
日商住友電氣工業股份有限公司
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Publication date
Application filed by 日商住友電氣工業股份有限公司 filed Critical 日商住友電氣工業股份有限公司
Publication of TW202043557A publication Critical patent/TW202043557A/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW109115746A 2019-05-17 2020-05-12 碳化矽基板 TW202043557A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-093882 2019-05-17
JP2019093882 2019-05-17

Publications (1)

Publication Number Publication Date
TW202043557A true TW202043557A (zh) 2020-12-01

Family

ID=73458521

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109115746A TW202043557A (zh) 2019-05-17 2020-05-12 碳化矽基板

Country Status (5)

Country Link
US (1) US12071708B2 (https=)
JP (1) JPWO2020235225A1 (https=)
CN (1) CN113811643B (https=)
TW (1) TW202043557A (https=)
WO (1) WO2020235225A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113825863B (zh) * 2019-05-17 2024-03-22 住友电气工业株式会社 碳化硅衬底
JP7600662B2 (ja) * 2020-12-17 2024-12-17 住友電気工業株式会社 炭化珪素基板の製造方法
CN117545711A (zh) * 2021-04-20 2024-02-09 奇跃公司 超声处理纳米几何形状控制过程和方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3590273B2 (ja) * 1997-09-10 2004-11-17 株式会社東芝 半導体装置の製造方法及び処理液の生成装置
US6825123B2 (en) * 2003-04-15 2004-11-30 Saint-Goban Ceramics & Plastics, Inc. Method for treating semiconductor processing components and components formed thereby
JP4787089B2 (ja) * 2006-06-26 2011-10-05 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP2008280207A (ja) 2007-05-10 2008-11-20 Matsushita Electric Ind Co Ltd ＳｉＣ単結晶基板の製造方法
JP4924451B2 (ja) * 2008-01-28 2012-04-25 セイコーエプソン株式会社 洗浄方法及び半導体装置の製造方法
JP5469840B2 (ja) * 2008-09-30 2014-04-16 昭和電工株式会社 炭化珪素単結晶基板の製造方法
JP5033168B2 (ja) * 2009-09-29 2012-09-26 忠弘 大見 炭化珪素製品、その製造方法、及び、炭化珪素製品の洗浄方法
US20130174868A1 (en) 2010-09-27 2013-07-11 Ums Co., Ltd. Method for purifying alkaline treatment fluid for semiconductor substrate and a purification apparatus
JP5803786B2 (ja) 2012-04-02 2015-11-04 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
JP2014210690A (ja) * 2013-04-22 2014-11-13 住友電気工業株式会社 炭化珪素基板の製造方法
US9279192B2 (en) * 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6623759B2 (ja) * 2014-09-08 2019-12-25 住友電気工業株式会社 炭化珪素単結晶基板およびその製造方法
JP6421505B2 (ja) * 2014-09-09 2018-11-14 日立金属株式会社 サファイア基板の製造方法
US10113249B2 (en) * 2014-10-23 2018-10-30 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method for manufacturing the same
CN110299403B (zh) * 2014-11-27 2022-03-25 住友电气工业株式会社 碳化硅基板
JP6295969B2 (ja) * 2015-01-27 2018-03-20 日立金属株式会社 単結晶炭化珪素基板、単結晶炭化珪素基板の製造方法、および単結晶炭化珪素基板の検査方法
CN108701623B (zh) * 2015-11-05 2022-10-04 米朋克斯株式会社 基板评价方法
JP6128262B2 (ja) * 2016-05-20 2017-05-17 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
CN109321980B (zh) * 2018-10-16 2019-11-19 山东天岳先进材料科技有限公司 一种高平整度、低损伤大直径单晶碳化硅衬底

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Publication number Publication date
CN113811643A (zh) 2021-12-17
WO2020235225A1 (ja) 2020-11-26
CN113811643B (zh) 2024-03-22
JPWO2020235225A1 (https=) 2020-11-26
US20220220638A1 (en) 2022-07-14
US12071708B2 (en) 2024-08-27

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