DE112013000502T5 - Herstellung von Mono- und Multischicht-Graphen hoher Qualität in großem Maßstab durch chemische Abscheidung aus der Gasphase - Google Patents
Herstellung von Mono- und Multischicht-Graphen hoher Qualität in großem Maßstab durch chemische Abscheidung aus der Gasphase Download PDFInfo
- Publication number
- DE112013000502T5 DE112013000502T5 DE112013000502.6T DE112013000502T DE112013000502T5 DE 112013000502 T5 DE112013000502 T5 DE 112013000502T5 DE 112013000502 T DE112013000502 T DE 112013000502T DE 112013000502 T5 DE112013000502 T5 DE 112013000502T5
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- graphene
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/02—Single layer graphene
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/04—Specific amount of layers or specific thickness
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/32—Size or surface area
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261583638P | 2012-01-06 | 2012-01-06 | |
| US61/583,638 | 2012-01-06 | ||
| PCT/US2013/020378 WO2013103886A1 (en) | 2012-01-06 | 2013-01-04 | High quality large scale single and multilayer graphene production by chemical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112013000502T5 true DE112013000502T5 (de) | 2015-01-08 |
Family
ID=48743087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112013000502.6T Withdrawn DE112013000502T5 (de) | 2012-01-06 | 2013-01-04 | Herstellung von Mono- und Multischicht-Graphen hoher Qualität in großem Maßstab durch chemische Abscheidung aus der Gasphase |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10023468B2 (enExample) |
| JP (1) | JP6355561B2 (enExample) |
| KR (1) | KR102088540B1 (enExample) |
| CN (1) | CN104159736B (enExample) |
| DE (1) | DE112013000502T5 (enExample) |
| GB (1) | GB2516372B (enExample) |
| WO (1) | WO2013103886A1 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5885198B2 (ja) * | 2012-02-28 | 2016-03-15 | 国立大学法人九州大学 | グラフェン薄膜の製造方法及びグラフェン薄膜 |
| TWI434949B (zh) * | 2012-03-14 | 2014-04-21 | Nat Univ Tsing Hua | 化學氣相沈積生成石墨烯之方法 |
| US10980919B2 (en) * | 2016-04-14 | 2021-04-20 | Lockheed Martin Corporation | Methods for in vivo and in vitro use of graphene and other two-dimensional materials |
| US10653824B2 (en) | 2012-05-25 | 2020-05-19 | Lockheed Martin Corporation | Two-dimensional materials and uses thereof |
| KR102025365B1 (ko) * | 2012-11-19 | 2019-09-25 | 한화에어로스페이스 주식회사 | 그래핀 합성장치 및 그래핀 합성방법 |
| US10370774B2 (en) * | 2013-01-09 | 2019-08-06 | The Regents Of The University Of California | Chemical vapor deposition growth of graphene |
| US9242865B2 (en) | 2013-03-05 | 2016-01-26 | Lockheed Martin Corporation | Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition |
| US9592475B2 (en) | 2013-03-12 | 2017-03-14 | Lockheed Martin Corporation | Method for forming perforated graphene with uniform aperture size |
| TWI503276B (zh) * | 2013-03-13 | 2015-10-11 | Academia Sinica | 石墨烯薄膜及電晶體的石墨烯通道之製備方法 |
| US9458020B2 (en) | 2013-05-06 | 2016-10-04 | Centre National De La Recherche Scientifique | Process and device for forming a graphene layer |
| US9572918B2 (en) | 2013-06-21 | 2017-02-21 | Lockheed Martin Corporation | Graphene-based filter for isolating a substance from blood |
| US20150050482A1 (en) * | 2013-08-14 | 2015-02-19 | Rodney S. Ruoff | Graphene synthesis by suppressing evaporative substrate loss during low pressure chemical vapor deposition |
| SG11201606287VA (en) | 2014-01-31 | 2016-08-30 | Lockheed Corp | Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer |
| WO2015119618A1 (en) * | 2014-02-07 | 2015-08-13 | Empire Technology Development Llc | Method of producing graphene from a hydrocarbon gas and liquid metal catalysts |
| US10093072B2 (en) * | 2014-03-18 | 2018-10-09 | Ut-Battelle, Llc | Graphene reinforced materials and related methods of manufacture |
| KR101600782B1 (ko) * | 2014-07-22 | 2016-03-08 | 광주과학기술원 | 다층 그래핀의 제조방법 |
| CN104860297B (zh) * | 2014-12-03 | 2017-01-25 | 北汽福田汽车股份有限公司 | 一种多层石墨烯的制备方法 |
| CN104477903A (zh) * | 2014-12-22 | 2015-04-01 | 上海集成电路研发中心有限公司 | 一种石墨烯薄膜的制备方法 |
| JP6855687B2 (ja) * | 2015-07-29 | 2021-04-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板処理装置のメンテナンス方法及び記憶媒体 |
| KR101860019B1 (ko) * | 2015-07-30 | 2018-05-23 | 한국과학기술연구원 | 그래핀 습식 전사를 위한 장치 및 방법 |
| WO2017023376A1 (en) | 2015-08-05 | 2017-02-09 | Lockheed Martin Corporation | Perforatable sheets of graphene-based material |
| WO2017023377A1 (en) | 2015-08-06 | 2017-02-09 | Lockheed Martin Corporation | Nanoparticle modification and perforation of graphene |
| US10533264B1 (en) * | 2015-12-02 | 2020-01-14 | General Graphene Corp. | Apparatus for producing graphene and other 2D materials |
| CA3020880A1 (en) | 2016-04-14 | 2017-10-19 | Lockheed Martin Corporation | Selective interfacial mitigation of graphene defects |
| WO2017180135A1 (en) | 2016-04-14 | 2017-10-19 | Lockheed Martin Corporation | Membranes with tunable selectivity |
| WO2017180139A1 (en) | 2016-04-14 | 2017-10-19 | Lockheed Martin Corporation | Two-dimensional membrane structures having flow passages |
| KR20180133430A (ko) | 2016-04-14 | 2018-12-14 | 록히드 마틴 코포레이션 | 결함 형성 또는 힐링의 인 시츄 모니터링 및 제어를 위한 방법 |
| CL2016001858A1 (es) | 2016-07-21 | 2017-02-17 | Univ Técnica Federico Santa Mar+Ia | Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado |
| US11127509B2 (en) | 2016-10-11 | 2021-09-21 | Ultraconductive Copper Company Inc. | Graphene-copper composite structure and manufacturing method |
| US10233566B2 (en) * | 2016-12-29 | 2019-03-19 | Ut-Battelle, Llc | Continuous single crystal growth of graphene |
| CA3052851C (en) * | 2017-02-10 | 2023-08-01 | Raymor Industries Inc. | Graphenic carbon nanoparticles having a low polyaromatic hydrocarbon concentration and processes of making same |
| US10828869B2 (en) * | 2017-08-30 | 2020-11-10 | Ultra Conductive Copper Company, Inc. | Graphene-copper structure and manufacturing method |
| KR102177472B1 (ko) | 2017-09-29 | 2020-11-11 | 주식회사 테스 | 그래핀 옥사이드 증착용 소스 및 이를 이용한 그래핀 옥사이드 박막 형성 방법 |
| CN108034930A (zh) * | 2017-11-22 | 2018-05-15 | 华中科技大学 | 一种石墨烯/金属复合材料及三维石墨烯的制备方法 |
| KR102271430B1 (ko) * | 2018-04-27 | 2021-07-01 | 한국과학기술연구원 | 나노홀 그래핀 시트가 코팅된 연료전지용 복합 고분자 전해질막 및 그 제조 방법 |
| KR102547500B1 (ko) * | 2018-05-18 | 2023-06-26 | 성균관대학교산학협력단 | 그래핀 코팅 금속 나노와이어의 제조방법, 이에 의해 제조된 그래핀 코팅 금속 나노와이어를 포함하는 투명전극 및 반도체 소자 |
| US11131511B2 (en) | 2018-05-29 | 2021-09-28 | Cooler Master Co., Ltd. | Heat dissipation plate and method for manufacturing the same |
| CN109336096B (zh) * | 2018-10-19 | 2023-09-26 | 深圳市纳设智能装备有限公司 | 一种开放式连续生长碳纳米材料的设备及制备方法 |
| CN109437169B (zh) * | 2018-12-04 | 2020-06-23 | 中国电子科技集团公司第十三研究所 | 制备超低褶皱密度石墨烯材料的方法 |
| CN109650383A (zh) * | 2018-12-25 | 2019-04-19 | 中国科学院上海微系统与信息技术研究所 | 一种石墨烯的制备方法 |
| CN109537043B (zh) * | 2018-12-28 | 2021-03-12 | 北京大学 | 控制晶面暴露取向的单晶铜箔的制备方法 |
| US12217958B2 (en) * | 2019-03-04 | 2025-02-04 | Samsung Electronics Co., Ltd. | Method of pre-treating substrate and method of directly forming graphene using the same |
| CN110668432B (zh) * | 2019-09-27 | 2021-05-14 | 北京碳垣新材料科技有限公司 | 以金属粉末液相为基底生长石墨烯的装置 |
| CN110803696A (zh) * | 2019-10-10 | 2020-02-18 | 广东墨睿科技有限公司 | 一种利用化学气相沉积法一步制成石墨烯粉末的方法 |
| US12240761B2 (en) * | 2020-02-03 | 2025-03-04 | Cealtech As | Device for large-scale production of graphene |
| CN111624219B (zh) * | 2020-06-19 | 2023-04-25 | 中国科学院宁波材料技术与工程研究所 | 一种测定单晶石墨烯取向的方法 |
| CN111847432B (zh) * | 2020-07-24 | 2023-08-29 | 北京石墨烯研究院 | 大面积多层石墨烯及其制备方法 |
| KR20220136757A (ko) | 2021-04-01 | 2022-10-11 | 삼성전자주식회사 | 나노결정질 그래핀 및 나노결정질 그래핀의 제조방법 |
| US11718526B2 (en) | 2021-12-22 | 2023-08-08 | General Graphene Corporation | Systems and methods for high yield and high throughput production of graphene |
| CN115341191B (zh) * | 2022-09-14 | 2024-01-30 | 广东省科学院新材料研究所 | 表面具石墨烯涂层的材料及其涂层的制备方法以及耐磨件 |
| CN115505859B (zh) * | 2022-11-03 | 2023-06-02 | 中国科学院上海微系统与信息技术研究所 | 一种提高铜基合金衬底上多层石墨烯覆盖率的方法 |
| CN117623291B (zh) * | 2023-12-14 | 2025-10-21 | 北京石墨烯研究院 | 双层石墨烯薄膜及其制备方法 |
| CN118908196A (zh) * | 2024-07-25 | 2024-11-08 | 昆明理工大学 | 一种石墨烯层数的调控方法 |
Family Cites Families (16)
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| US8252405B2 (en) * | 2005-10-27 | 2012-08-28 | The Board Of Trustees Of The Leland Stanford Junior University | Single-walled carbon nanotubes and methods of preparation thereof |
| KR20090026568A (ko) * | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
| WO2009129194A2 (en) | 2008-04-14 | 2009-10-22 | Massachusetts Institute Of Technology | Large-area single- and few-layer graphene on arbitrary substrates |
| US8470400B2 (en) | 2009-10-21 | 2013-06-25 | Board Of Regents, The University Of Texas System | Graphene synthesis by chemical vapor deposition |
| US8808810B2 (en) * | 2009-12-15 | 2014-08-19 | Guardian Industries Corp. | Large area deposition of graphene on substrates, and products including the same |
| CN102102220B (zh) | 2009-12-22 | 2014-02-19 | 中国科学院物理研究所 | 金刚石(111)面上的石墨烯制备方法 |
| US8268180B2 (en) * | 2010-01-26 | 2012-09-18 | Wisconsin Alumni Research Foundation | Methods of fabricating large-area, semiconducting nanoperforated graphene materials |
| US20110195207A1 (en) * | 2010-02-08 | 2011-08-11 | Sungkyunkwan University Foundation For Corporate Collaboration | Graphene roll-to-roll coating apparatus and graphene roll-to-roll coating method using the same |
| US8673259B2 (en) * | 2010-05-11 | 2014-03-18 | Solarno Inc. | Apparatus and method for substrate and gas heating during chemical vapor deposition nanotube synthesis |
| CN102020263B (zh) | 2010-07-02 | 2013-04-17 | 浙江大学 | 一种合成石墨烯薄膜材料的方法 |
| CN102127750B (zh) | 2011-03-01 | 2012-08-22 | 哈尔滨工程大学 | 一种基于化学沉积法制备石墨烯材料的方法 |
| CN102191476B (zh) | 2011-04-11 | 2014-12-10 | 兰州大学 | 硫掺杂石墨烯薄膜的制备方法 |
| CN102212794B (zh) | 2011-04-13 | 2012-10-10 | 中国科学院上海微系统与信息技术研究所 | 一种基于电镀铜衬底制备大面积石墨烯薄膜的方法 |
| CN102134067B (zh) | 2011-04-18 | 2013-02-06 | 北京大学 | 一种制备单层石墨烯的方法 |
| CN102220566A (zh) | 2011-06-09 | 2011-10-19 | 无锡第六元素高科技发展有限公司 | 一种化学气相沉积制备单层和多层石墨烯的方法 |
| US10100402B2 (en) * | 2011-10-07 | 2018-10-16 | International Business Machines Corporation | Substrate holder for graphene film synthesis |
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| KR20140128952A (ko) | 2014-11-06 |
| GB201411990D0 (en) | 2014-08-20 |
| US10023468B2 (en) | 2018-07-17 |
| JP6355561B2 (ja) | 2018-07-11 |
| KR102088540B1 (ko) | 2020-03-12 |
| GB2516372B (en) | 2021-01-13 |
| WO2013103886A1 (en) | 2013-07-11 |
| JP2015507599A (ja) | 2015-03-12 |
| CN104159736A (zh) | 2014-11-19 |
| HK1203902A1 (en) | 2015-11-06 |
| GB2516372A (en) | 2015-01-21 |
| US20130174968A1 (en) | 2013-07-11 |
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