CL2016001858A1 - Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado - Google Patents

Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado

Info

Publication number
CL2016001858A1
CL2016001858A1 CL2016001858A CL2016001858A CL2016001858A1 CL 2016001858 A1 CL2016001858 A1 CL 2016001858A1 CL 2016001858 A CL2016001858 A CL 2016001858A CL 2016001858 A CL2016001858 A CL 2016001858A CL 2016001858 A1 CL2016001858 A1 CL 2016001858A1
Authority
CL
Chile
Prior art keywords
cvd
modified
deposition
copper substrate
chemical vapors
Prior art date
Application number
CL2016001858A
Other languages
English (en)
Inventor
Haberle Tapia Patricio
Orellana Gómez Christian
Original Assignee
Univ Técnica Federico Santa Mar+Ia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Técnica Federico Santa Mar+Ia filed Critical Univ Técnica Federico Santa Mar+Ia
Priority to CL2016001858A priority Critical patent/CL2016001858A1/es
Publication of CL2016001858A1 publication Critical patent/CL2016001858A1/es
Priority to EP17830164.4A priority patent/EP3489194A4/en
Priority to PCT/CL2017/050032 priority patent/WO2018014143A1/es
Priority to JP2019524490A priority patent/JP7039051B2/ja
Priority to KR1020197002936A priority patent/KR102408821B1/ko
Priority to US16/318,193 priority patent/US11624114B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • General Induction Heating (AREA)

Abstract

Un método y sistema para producir grafeno sobre un substrato de cobre por deposición de vapores químicos (AP-CVD) modificado; que, comprende: - disponer de dos láminas de cobre (40) dispuestas en forma paralela y separadas con un material cerámico (30); - incorporar dichas dos láminas de cobre (40) al interior de una cámara abierta, que está constituido por una cámara cilíndrica de vidrio (10), donde su eje axial se encuentra orientado verticalmente, donde la cámara cilíndrica de vidrio (10) se encue
CL2016001858A 2016-07-21 2016-07-21 Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado CL2016001858A1 (es)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CL2016001858A CL2016001858A1 (es) 2016-07-21 2016-07-21 Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado
EP17830164.4A EP3489194A4 (en) 2016-07-21 2017-07-18 METHOD AND SYSTEM FOR PRODUCING GRAPHS ON A COPPER SUBSTRATE BY MODIFIED CHEMICAL VAPOR DEPOSITION (AP-CVD)
PCT/CL2017/050032 WO2018014143A1 (es) 2016-07-21 2017-07-18 Método y sistema para producir grafeno sobre un substrato de cobre por deposición de vapores químicos (ap-cvd) modificado
JP2019524490A JP7039051B2 (ja) 2016-07-21 2017-07-18 大気圧での化学蒸着（ａｐ－ｃｖｄ）により銅基板にグラフェンを製造する改良方法および改良システム
KR1020197002936A KR102408821B1 (ko) 2016-07-21 2017-07-18 변형된 화학적 기상 증착법(ap-cvd)에 의해 구리 기판 상에 그래핀을 생성하기 위한 방법 및 시스템
US16/318,193 US11624114B2 (en) 2016-07-21 2017-07-18 Method and system for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CL2016001858A CL2016001858A1 (es) 2016-07-21 2016-07-21 Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado

Publications (1)

Publication Number Publication Date
CL2016001858A1 true CL2016001858A1 (es) 2017-02-17

Family

ID=59858379

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2016001858A CL2016001858A1 (es) 2016-07-21 2016-07-21 Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado

Country Status (6)

Country Link
US (1) US11624114B2 (es)
EP (1) EP3489194A4 (es)
JP (1) JP7039051B2 (es)
KR (1) KR102408821B1 (es)
CL (1) CL2016001858A1 (es)
WO (1) WO2018014143A1 (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CL2016001858A1 (es) 2016-07-21 2017-02-17 Univ Técnica Federico Santa Mar+Ia Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado
JP2022549368A (ja) * 2019-09-30 2022-11-24 ラム リサーチ コーポレーション リモートプラズマを用いる選択的グラフェン堆積
CN115433920B (zh) * 2021-06-03 2024-05-14 上海新池能源科技有限公司 生长单层石墨烯的工艺方法
CN113566044A (zh) * 2021-07-30 2021-10-29 重庆大学 一种获取连续高温氯气的加热方法
CN113699503B (zh) * 2021-08-31 2022-09-09 上海交通大学 金属表面具有多相复合碳源的石墨烯制备方法及装置
CN114459336A (zh) * 2022-03-04 2022-05-10 广东粤港澳大湾区国家纳米科技创新研究院 石墨烯应变传感器及石墨烯应变传感器的制备方法
CN115125524A (zh) * 2022-07-05 2022-09-30 常州第六元素半导体有限公司 一种分段式卷对卷cvd石墨烯连续生长设备
CN115744886B (zh) * 2022-11-24 2024-04-19 广东墨睿科技有限公司 一种石墨烯生长支架及生长石墨烯的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4698354B2 (ja) 2005-09-15 2011-06-08 株式会社リコー Ｃｖｄ装置
US20100301212A1 (en) * 2009-05-18 2010-12-02 The Regents Of The University Of California Substrate-free gas-phase synthesis of graphene sheets
KR101912798B1 (ko) 2011-01-31 2018-10-30 한화에어로스페이스 주식회사 그래핀 합성장치 및 합성방법
DE112013000502T5 (de) * 2012-01-06 2015-01-08 Ut-Battelle, Llc. Herstellung von Mono- und Multischicht-Graphen hoher Qualität in großem Maßstab durch chemische Abscheidung aus der Gasphase
GB201215579D0 (en) 2012-08-31 2012-10-17 Univ Leiden Thin film formation
KR20140030977A (ko) 2012-09-04 2014-03-12 삼성테크윈 주식회사 촉매 금속 지지 장치, 그래핀 다매 합성 장치 및 그래핀 다매 합성 방법.
US20150140211A1 (en) * 2013-11-19 2015-05-21 Cvd Equipment Corporation Scalable 2D-Film CVD Synthesis
CL2016001858A1 (es) 2016-07-21 2017-02-17 Univ Técnica Federico Santa Mar+Ia Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado

Also Published As

Publication number Publication date
EP3489194A4 (en) 2020-04-22
US20190233942A1 (en) 2019-08-01
US11624114B2 (en) 2023-04-11
WO2018014143A1 (es) 2018-01-25
JP7039051B2 (ja) 2022-03-22
KR20190032401A (ko) 2019-03-27
JP2019529323A (ja) 2019-10-17
EP3489194A1 (en) 2019-05-29
KR102408821B1 (ko) 2022-06-14

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