CN113699503B - 金属表面具有多相复合碳源的石墨烯制备方法及装置 - Google Patents
金属表面具有多相复合碳源的石墨烯制备方法及装置 Download PDFInfo
- Publication number
- CN113699503B CN113699503B CN202111016218.2A CN202111016218A CN113699503B CN 113699503 B CN113699503 B CN 113699503B CN 202111016218 A CN202111016218 A CN 202111016218A CN 113699503 B CN113699503 B CN 113699503B
- Authority
- CN
- China
- Prior art keywords
- carbon source
- graphene
- gaseous
- solid
- organic carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111016218.2A CN113699503B (zh) | 2021-08-31 | 2021-08-31 | 金属表面具有多相复合碳源的石墨烯制备方法及装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111016218.2A CN113699503B (zh) | 2021-08-31 | 2021-08-31 | 金属表面具有多相复合碳源的石墨烯制备方法及装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113699503A CN113699503A (zh) | 2021-11-26 |
CN113699503B true CN113699503B (zh) | 2022-09-09 |
Family
ID=78658330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111016218.2A Active CN113699503B (zh) | 2021-08-31 | 2021-08-31 | 金属表面具有多相复合碳源的石墨烯制备方法及装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113699503B (zh) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103011136A (zh) * | 2011-09-23 | 2013-04-03 | 浙江大学 | 一种合成石墨烯薄膜的方法 |
CL2016001858A1 (es) * | 2016-07-21 | 2017-02-17 | Univ Técnica Federico Santa Mar+Ia | Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado |
CN110028058B (zh) * | 2018-01-11 | 2021-05-25 | 北京石墨烯研究院 | 一种氮掺石墨烯材料及其制备方法 |
CN108439382B (zh) * | 2018-04-20 | 2020-11-20 | 清华大学 | 一种可控液态碳源化学气相沉积制备石墨烯的方法及装置 |
CN110760090A (zh) * | 2018-07-25 | 2020-02-07 | 张文跃 | 一种pet石墨烯镀膜卷材的制备装置及生产工艺 |
-
2021
- 2021-08-31 CN CN202111016218.2A patent/CN113699503B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN113699503A (zh) | 2021-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI498206B (zh) | 連續式合成碳薄膜或無機材料薄膜之設備與方法 | |
WO2016016660A2 (en) | Porous materials comprising two-dimensional nanomaterials | |
KR20160092344A (ko) | 탄소가 포함된 액체상의 전구체를 이용한 연속 롤투롤 방식의 고품질 그래핀 제조방법과 그 제조장치 | |
CN107673332B (zh) | 一种利用复合金属模板制备大面积3d石墨烯的方法 | |
CN112758950A (zh) | 一种硼烯纳米片及其制备方法 | |
CN112746262A (zh) | 石墨烯复合金属箔及其双面生长方法和装置 | |
Zhong et al. | Single-step CVD growth of high-density carbon nanotube forests on metallic Ti coatings through catalyst engineering | |
CN104630738A (zh) | 一种在高温、真空下连续生长薄膜的方法 | |
Tian et al. | Synthesis of AAB‐stacked single‐crystal graphene/hBN/graphene trilayer van der Waals heterostructures by in situ CVD | |
CN113699503B (zh) | 金属表面具有多相复合碳源的石墨烯制备方法及装置 | |
CN103469308A (zh) | 一种二维原子晶体材料、其连续化生产方法及生产线 | |
CN111979525A (zh) | 一种高导电率石墨烯/铜复合导线制备方法 | |
CN104609406B (zh) | 一种常压二段过程催化固体碳源合成石墨烯的方法 | |
CN112740337B (zh) | 导电元件 | |
CN107777681B (zh) | 一种利用纳米粉催化制备双层和/或多层石墨烯的方法 | |
Kang et al. | Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis (isopropylcyclopentadienyl) molybdenum (IV) dihydride and an H2/N2/Ar plasma | |
CN115072706A (zh) | 一种氮掺杂石墨烯的可控制备方法及其所制备的氮掺杂石墨烯 | |
CN111847432B (zh) | 大面积多层石墨烯及其制备方法 | |
CN111058017B (zh) | 石墨烯金属复合丝材及其低温连续化制备方法 | |
CN111118470B (zh) | 表面具有复合涂覆Gr的复合金属丝及其制备方法 | |
CN112746263A (zh) | 一种常压化学气相沉积制备少层石墨烯膜的方法 | |
US20200083520A1 (en) | Method for producing yttrium oxide-containing thin film by atomic layer deposition | |
TWI535887B (zh) | 合成高品質碳薄膜或無機材料薄膜之設備與方法 | |
CN115505859B (zh) | 一种提高铜基合金衬底上多层石墨烯覆盖率的方法 | |
CN216837150U (zh) | 基于固态碳源的高导电石墨烯金属复合材料制备装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221031 Address after: 201109 room 110 and 111, building 3, No. 600, Jianchuan Road, Minhang District, Shanghai Patentee after: Shanghai Jiaotong University Intellectual Property Management Co.,Ltd. Patentee after: Liu Yue Address before: 200030 No. 1954, Huashan Road, Shanghai, Xuhui District Patentee before: SHANGHAI JIAO TONG University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230821 Address after: 201109 Building 1, No. 600, Jianchuan Road, Minhang District, Shanghai Patentee after: Chuanlan Technology (Shanghai) Co.,Ltd. Address before: 201109 room 110 and 111, building 3, No. 600, Jianchuan Road, Minhang District, Shanghai Patentee before: Shanghai Jiaotong University Intellectual Property Management Co.,Ltd. Patentee before: Liu Yue |