ES2530809T3 - Fragmento de silicio policristalino y procedimiento para la limpieza de fragmentos de silicio policristalino - Google Patents
Fragmento de silicio policristalino y procedimiento para la limpieza de fragmentos de silicio policristalino Download PDFInfo
- Publication number
- ES2530809T3 ES2530809T3 ES13154909T ES13154909T ES2530809T3 ES 2530809 T3 ES2530809 T3 ES 2530809T3 ES 13154909 T ES13154909 T ES 13154909T ES 13154909 T ES13154909 T ES 13154909T ES 2530809 T3 ES2530809 T3 ES 2530809T3
- Authority
- ES
- Spain
- Prior art keywords
- polycrystalline silicon
- procedure
- fragment
- cleaning
- fragments
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/89—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by mass-spectroscopy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/90—Other crystal-structural characteristics not specified above
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Abstract
Fragmento de silicio policristalino con una concentración de carbono en la superficie de 0,5-35 ppbw.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012202640A DE102012202640A1 (de) | 2012-02-21 | 2012-02-21 | Polykristallines Siliciumbruchstück und Verfahren zur Reinigung von polykristallinen Siliciumbruchstücken |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2530809T3 true ES2530809T3 (es) | 2015-03-06 |
Family
ID=47683619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES13154909T Active ES2530809T3 (es) | 2012-02-21 | 2013-02-12 | Fragmento de silicio policristalino y procedimiento para la limpieza de fragmentos de silicio policristalino |
Country Status (8)
Country | Link |
---|---|
US (2) | US9209009B2 (es) |
EP (1) | EP2631215B1 (es) |
JP (1) | JP5615946B2 (es) |
KR (1) | KR101549734B1 (es) |
CN (1) | CN103253674B (es) |
CA (1) | CA2803383C (es) |
DE (1) | DE102012202640A1 (es) |
ES (1) | ES2530809T3 (es) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012213869A1 (de) * | 2012-08-06 | 2014-02-06 | Wacker Chemie Ag | Polykristalline Siliciumbruchstücke und Verfahren zu deren Herstellung |
DE102013218003A1 (de) | 2013-09-09 | 2015-03-12 | Wacker Chemie Ag | Klassieren von Polysilicium |
DE102013221826A1 (de) * | 2013-10-28 | 2015-04-30 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
JP2016056066A (ja) * | 2014-09-10 | 2016-04-21 | 信越化学工業株式会社 | 多結晶シリコンの表面清浄化方法 |
DE102015206849A1 (de) | 2015-04-16 | 2016-10-20 | Wacker Chemie Ag | Vorrichtung und Verfahren zur Klassierung und Entstaubung von Polysiliciumgranulat |
JP6292164B2 (ja) * | 2015-04-30 | 2018-03-14 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
DE102015209629A1 (de) * | 2015-05-26 | 2016-12-01 | Wacker Chemie Ag | Verpackung von Polysilicium |
JP2016222470A (ja) * | 2015-05-27 | 2016-12-28 | 信越化学工業株式会社 | 多結晶シリコン片 |
JP6343592B2 (ja) | 2015-07-28 | 2018-06-13 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉及び多結晶シリコンの製造方法 |
DE102016204651A1 (de) | 2016-03-21 | 2017-09-21 | Wacker Chemie Ag | Quetschmanschetten für die Herstellung von Polysilicium-Granulat |
US10345211B2 (en) | 2016-03-28 | 2019-07-09 | Hemlock Semiconductor Operations Llc | Method of determining a concentration of a material not dissolved by silicon etchants contaminating a product |
JP6470223B2 (ja) | 2016-04-04 | 2019-02-13 | 信越化学工業株式会社 | 単結晶シリコンの製造方法 |
CN106000594A (zh) * | 2016-05-12 | 2016-10-12 | 大工(青岛)新能源材料技术研究院有限公司 | 一种实现多晶硅无污染小颗粒破碎的方法 |
WO2018110653A1 (ja) | 2016-12-16 | 2018-06-21 | 株式会社トクヤマ | ポリシリコン破砕物の付着樹脂の分析方法 |
JP6884880B2 (ja) * | 2018-02-08 | 2021-06-09 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | 冶金シリコンの分類方法 |
JP6694002B2 (ja) * | 2018-05-21 | 2020-05-13 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
JP7281937B2 (ja) * | 2019-03-28 | 2023-05-26 | 高純度シリコン株式会社 | 低炭素高純度多結晶シリコン塊とその製造方法 |
CN114127011B (zh) | 2019-08-29 | 2024-03-08 | 瓦克化学股份公司 | 用于生产硅块的方法 |
JP7125960B2 (ja) * | 2020-04-30 | 2022-08-25 | 信越化学工業株式会社 | 多結晶シリコンの収容治具および多結晶シリコンの製造方法 |
CN112048763B (zh) * | 2020-10-09 | 2022-07-12 | 西安奕斯伟材料科技有限公司 | 多晶硅二次加料装置、多晶硅铸锭设备 |
CN117836623A (zh) * | 2021-09-17 | 2024-04-05 | 株式会社德山 | 无机固体的表面碳量测定方法 |
CN117139264B (zh) * | 2023-10-27 | 2024-04-05 | 宁夏润阳硅材料科技有限公司 | 一种多晶硅生产过程中超纯水清洗节能降耗系统 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4555303A (en) | 1984-10-02 | 1985-11-26 | Motorola, Inc. | Oxidation of material in high pressure oxygen plasma |
JPH01242762A (ja) | 1988-03-23 | 1989-09-27 | O C C:Kk | 強靭な構造用金属材料の製造法 |
US5436164A (en) | 1990-11-15 | 1995-07-25 | Hemlock Semi-Conductor Corporation | Analytical method for particulate silicon |
US5361128A (en) | 1992-09-10 | 1994-11-01 | Hemlock Semiconductor Corporation | Method for analyzing irregular shaped chunked silicon for contaminates |
US5445679A (en) | 1992-12-23 | 1995-08-29 | Memc Electronic Materials, Inc. | Cleaning of polycrystalline silicon for charging into a Czochralski growing process |
JP3683735B2 (ja) * | 1998-03-26 | 2005-08-17 | シルトロニック・ジャパン株式会社 | 無転位シリコン単結晶の製造方法および無転位シリコン単結晶インゴット |
JP2000302594A (ja) * | 1999-02-18 | 2000-10-31 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの洗浄方法 |
JP3688934B2 (ja) * | 1999-04-16 | 2005-08-31 | アルパイン株式会社 | マイクロホンシステム |
JP3723502B2 (ja) | 2001-01-25 | 2005-12-07 | 住友チタニウム株式会社 | 半導体用多結晶シリコンの洗浄方法 |
US8021483B2 (en) | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
US7520932B2 (en) * | 2006-04-05 | 2009-04-21 | Dow Corning Corporation | Method of analyzing carbon concentration in crystalline silicon |
DE102007027110A1 (de) * | 2007-06-13 | 2008-12-18 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Verpacken von polykristallinem Siliciumbruch |
JP2009018967A (ja) * | 2007-07-12 | 2009-01-29 | Sharp Corp | 固体原料融解方法および結晶成長方法 |
DE102007047210A1 (de) | 2007-10-02 | 2009-04-09 | Wacker Chemie Ag | Polykristallines Silicium und Verfahren zu seiner Herstellung |
DE102010040293A1 (de) | 2010-09-06 | 2012-03-08 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
-
2012
- 2012-02-21 DE DE102012202640A patent/DE102012202640A1/de not_active Withdrawn
-
2013
- 2013-01-24 CA CA2803383A patent/CA2803383C/en not_active Expired - Fee Related
- 2013-01-28 JP JP2013012903A patent/JP5615946B2/ja not_active Expired - Fee Related
- 2013-02-12 EP EP13154909.9A patent/EP2631215B1/de not_active Not-in-force
- 2013-02-12 ES ES13154909T patent/ES2530809T3/es active Active
- 2013-02-21 CN CN201310055545.8A patent/CN103253674B/zh not_active Expired - Fee Related
- 2013-02-21 US US13/772,756 patent/US9209009B2/en not_active Expired - Fee Related
- 2013-02-21 KR KR1020130018806A patent/KR101549734B1/ko active IP Right Grant
-
2015
- 2015-10-30 US US14/927,779 patent/US9776876B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN103253674B (zh) | 2016-03-16 |
US20130216466A1 (en) | 2013-08-22 |
DE102012202640A1 (de) | 2013-08-22 |
JP5615946B2 (ja) | 2014-10-29 |
JP2013170122A (ja) | 2013-09-02 |
US20160052790A1 (en) | 2016-02-25 |
EP2631215B1 (de) | 2014-11-26 |
EP2631215A1 (de) | 2013-08-28 |
US9209009B2 (en) | 2015-12-08 |
CN103253674A (zh) | 2013-08-21 |
KR20130096200A (ko) | 2013-08-29 |
CA2803383A1 (en) | 2013-08-21 |
US9776876B2 (en) | 2017-10-03 |
KR101549734B1 (ko) | 2015-09-02 |
CA2803383C (en) | 2015-10-20 |
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