JP6470223B2 - 単結晶シリコンの製造方法 - Google Patents
単結晶シリコンの製造方法 Download PDFInfo
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- JP6470223B2 JP6470223B2 JP2016075072A JP2016075072A JP6470223B2 JP 6470223 B2 JP6470223 B2 JP 6470223B2 JP 2016075072 A JP2016075072 A JP 2016075072A JP 2016075072 A JP2016075072 A JP 2016075072A JP 6470223 B2 JP6470223 B2 JP 6470223B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
10 多結晶シリコン棒
11 ロッド
20 板状試料
30 スリット
40 X線ビーム
Claims (2)
- シーメンス法による合成が終了した後に1000〜1300℃の温度範囲で熱処理を施され、該熱処理によりミラー指数面<111>と<220>を主面とする結晶粒が成長した多結晶シリコン棒であって、前記熱処理後のミラー指数面<111>および<220>からのX線回折強度が前記熱処理前のX線回折強度と比較して何れも1.5倍以下であり、かつ、前記熱処理後の平均結晶粒径が前記熱処理前の平均結晶粒径の3倍以上である多結晶シリコン棒を、FZ法による単結晶化の原料として用いる、単結晶シリコンの製造方法。
- 前記多結晶シリコン棒は、成長方向の垂直面において、熱拡散率が前記熱処理後に増加している、請求項1に記載の単結晶シリコンの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016075072A JP6470223B2 (ja) | 2016-04-04 | 2016-04-04 | 単結晶シリコンの製造方法 |
EP17155922.2A EP3228593B8 (en) | 2016-04-04 | 2017-02-13 | Polycrystalline silicon and method for producing fz single crystal silicon using the polycrystalline silicon |
US15/432,171 US10066320B2 (en) | 2016-04-04 | 2017-02-14 | Polycrystalline silicon, FZ single crystal silicon, and method for producing the same |
CN201710088583.1A CN107268079B (zh) | 2016-04-04 | 2017-02-17 | 多晶硅、fz单晶硅以及它们的制造方法 |
KR1020170032969A KR102284506B1 (ko) | 2016-04-04 | 2017-03-16 | 다결정 실리콘, fz 단결정 실리콘, 및 그의 제조 방법 |
Applications Claiming Priority (1)
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JP2016075072A JP6470223B2 (ja) | 2016-04-04 | 2016-04-04 | 単結晶シリコンの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2017186190A JP2017186190A (ja) | 2017-10-12 |
JP6470223B2 true JP6470223B2 (ja) | 2019-02-13 |
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JP2016075072A Active JP6470223B2 (ja) | 2016-04-04 | 2016-04-04 | 単結晶シリコンの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10066320B2 (ja) |
EP (1) | EP3228593B8 (ja) |
JP (1) | JP6470223B2 (ja) |
KR (1) | KR102284506B1 (ja) |
CN (1) | CN107268079B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110133023B (zh) * | 2019-05-17 | 2022-04-26 | 西安奕斯伟材料科技有限公司 | 多晶硅选择方法、多晶硅及其在直拉法中的应用 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3773973B2 (ja) * | 1995-12-25 | 2006-05-10 | 株式会社トクヤマ | シリコン成形体用前駆体 |
DE19780520B4 (de) * | 1996-05-21 | 2007-03-08 | Tokuyama Corp., Tokuya | Stab aus polykristallinem Silicium und Herstellungsverfahren hierfür |
US6544333B2 (en) * | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
DE102007023041A1 (de) | 2007-05-16 | 2008-11-20 | Wacker Chemie Ag | Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung |
JP4844764B2 (ja) * | 2008-03-17 | 2011-12-28 | 信越化学工業株式会社 | 非水電解質二次電池負極及びそれを用いた非水電解質二次電池 |
KR101406013B1 (ko) * | 2008-03-17 | 2014-06-11 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 비수 전해질 2차 전지용 부극재 및 그것의 제조 방법, 및 비수 전해질 2차 전지용 부극 및 비수 전해질 2차 전지 |
DE102010003068A1 (de) * | 2010-03-19 | 2011-09-22 | Wacker Chemie Ag | Verfahren zur Herstellung von rissfreien polykristallinen Siliciumstäben |
WO2012164803A1 (ja) * | 2011-06-02 | 2012-12-06 | 信越化学工業株式会社 | 多結晶シリコン棒の選択方法および単結晶シリコンの製造方法 |
DE102012202640A1 (de) * | 2012-02-21 | 2013-08-22 | Wacker Chemie Ag | Polykristallines Siliciumbruchstück und Verfahren zur Reinigung von polykristallinen Siliciumbruchstücken |
JP5828795B2 (ja) * | 2012-04-04 | 2015-12-09 | 信越化学工業株式会社 | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法 |
JP2014001096A (ja) * | 2012-06-18 | 2014-01-09 | Shin Etsu Chem Co Ltd | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法 |
JP5868286B2 (ja) * | 2012-08-10 | 2016-02-24 | 信越化学工業株式会社 | 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法 |
JP5947248B2 (ja) * | 2013-06-21 | 2016-07-06 | 信越化学工業株式会社 | 多結晶シリコン棒の選択方法 |
JP6418778B2 (ja) * | 2014-05-07 | 2018-11-07 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の製造方法、および、単結晶シリコン |
CN105417545B (zh) * | 2015-09-29 | 2018-11-23 | 南京大学 | 一种制备高纯度硅颗粒的方法 |
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2016
- 2016-04-04 JP JP2016075072A patent/JP6470223B2/ja active Active
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2017
- 2017-02-13 EP EP17155922.2A patent/EP3228593B8/en active Active
- 2017-02-14 US US15/432,171 patent/US10066320B2/en active Active
- 2017-02-17 CN CN201710088583.1A patent/CN107268079B/zh active Active
- 2017-03-16 KR KR1020170032969A patent/KR102284506B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20170283986A1 (en) | 2017-10-05 |
EP3228593B1 (en) | 2021-06-30 |
KR102284506B1 (ko) | 2021-07-30 |
KR20170114925A (ko) | 2017-10-16 |
JP2017186190A (ja) | 2017-10-12 |
CN107268079A (zh) | 2017-10-20 |
US10066320B2 (en) | 2018-09-04 |
EP3228593A1 (en) | 2017-10-11 |
CN107268079B (zh) | 2021-06-15 |
EP3228593B8 (en) | 2021-08-18 |
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