DE112005000353T5 - Komplementäre Lateral-Nitrid-Trasistoren - Google Patents
Komplementäre Lateral-Nitrid-Trasistoren Download PDFInfo
- Publication number
- DE112005000353T5 DE112005000353T5 DE112005000353T DE112005000353T DE112005000353T5 DE 112005000353 T5 DE112005000353 T5 DE 112005000353T5 DE 112005000353 T DE112005000353 T DE 112005000353T DE 112005000353 T DE112005000353 T DE 112005000353T DE 112005000353 T5 DE112005000353 T5 DE 112005000353T5
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- pillar
- semiconductor pillar
- semiconductor device
- carrier surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000000295 complement effect Effects 0.000 title description 3
- 150000004767 nitrides Chemical class 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 229
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000009395 breeding Methods 0.000 claims description 4
- 230000001488 breeding effect Effects 0.000 claims description 4
- 230000002401 inhibitory effect Effects 0.000 claims description 2
- 230000005669 field effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 101150101567 pat-2 gene Proteins 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
- H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Landscapes
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54491004P | 2004-02-12 | 2004-02-12 | |
| US60/544,910 | 2004-02-12 | ||
| US11/056,833 US7205657B2 (en) | 2004-02-12 | 2005-02-11 | Complimentary lateral nitride transistors |
| US11/056,833 | 2005-02-11 | ||
| PCT/US2005/004609 WO2005079365A2 (en) | 2004-02-12 | 2005-02-14 | Complimentary lateral nitride transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112005000353T5 true DE112005000353T5 (de) | 2007-02-01 |
Family
ID=34840655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112005000353T Withdrawn DE112005000353T5 (de) | 2004-02-12 | 2005-02-14 | Komplementäre Lateral-Nitrid-Trasistoren |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7205657B2 (enExample) |
| JP (1) | JP2007527115A (enExample) |
| KR (1) | KR100772730B1 (enExample) |
| DE (1) | DE112005000353T5 (enExample) |
| WO (1) | WO2005079365A2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5008317B2 (ja) * | 2006-02-27 | 2012-08-22 | 株式会社豊田中央研究所 | ユニポーラダイオード |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2654828B2 (ja) * | 1989-05-22 | 1997-09-17 | 日本電信電話株式会社 | 量子細線を有する半導体装置及びその製造方法 |
| FR2689680B1 (fr) * | 1992-04-02 | 2001-08-10 | Thomson Csf | Procédé de réalisation de couches minces hétéroépitaxiales et de dispositifs électroniques. |
| JPH07183541A (ja) * | 1993-12-22 | 1995-07-21 | Oki Electric Ind Co Ltd | 半導体微細構造の形成方法 |
| GB2350926A (en) * | 1999-05-27 | 2000-12-13 | Seiko Epson Corp | Monolithic,semiconductor light emitting and receiving device |
| US6617226B1 (en) * | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| JP3430206B2 (ja) * | 2000-06-16 | 2003-07-28 | 学校法人 名城大学 | 半導体素子の製造方法及び半導体素子 |
| US6498372B2 (en) * | 2001-02-16 | 2002-12-24 | International Business Machines Corporation | Conductive coupling of electrical structures to a semiconductor device located under a buried oxide layer |
| WO2002067333A1 (fr) * | 2001-02-21 | 2002-08-29 | Mitsubishi Denki Kabushiki Kaisha | Dispositif semi-conducteur et procede de fabrication correspondant |
| WO2002080242A1 (fr) * | 2001-03-29 | 2002-10-10 | Toyoda Gosei Co., Ltd. | Procede de fabrication d'un semi-conducteur a base d'un compose nitrure du groupe iii et dispositif semi-conducteur a base d'un compose nitrure du groupe iii |
| US6686604B2 (en) * | 2001-09-21 | 2004-02-03 | Agere Systems Inc. | Multiple operating voltage vertical replacement-gate (VRG) transistor |
| JP4388720B2 (ja) * | 2001-10-12 | 2009-12-24 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
| JP2003152177A (ja) * | 2001-11-19 | 2003-05-23 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6743291B2 (en) * | 2002-07-09 | 2004-06-01 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating a CMOS device with integrated super-steep retrograde twin wells using double selective epitaxial growth |
| US6822301B2 (en) * | 2002-07-31 | 2004-11-23 | Infineon Technologies Ag | Maskless middle-of-line liner deposition |
| US6800904B2 (en) * | 2002-10-17 | 2004-10-05 | Fuji Electric Co., Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
| KR100632036B1 (ko) * | 2002-12-30 | 2006-10-04 | 동부일렉트로닉스 주식회사 | 반도체 메모리 소자의 제조 방법 |
-
2005
- 2005-02-11 US US11/056,833 patent/US7205657B2/en not_active Expired - Lifetime
- 2005-02-14 JP JP2006553314A patent/JP2007527115A/ja active Pending
- 2005-02-14 WO PCT/US2005/004609 patent/WO2005079365A2/en not_active Ceased
- 2005-02-14 KR KR1020067015753A patent/KR100772730B1/ko not_active Expired - Lifetime
- 2005-02-14 DE DE112005000353T patent/DE112005000353T5/de not_active Withdrawn
-
2006
- 2006-12-04 US US11/633,304 patent/US7510957B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20070077689A1 (en) | 2007-04-05 |
| WO2005079365A2 (en) | 2005-09-01 |
| US7205657B2 (en) | 2007-04-17 |
| US20050180231A1 (en) | 2005-08-18 |
| US7510957B2 (en) | 2009-03-31 |
| WO2005079365A3 (en) | 2007-04-12 |
| JP2007527115A (ja) | 2007-09-20 |
| KR100772730B1 (ko) | 2007-11-02 |
| KR20060115763A (ko) | 2006-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law |
Ref document number: 112005000353 Country of ref document: DE Date of ref document: 20070201 Kind code of ref document: P |
|
| R016 | Response to examination communication | ||
| R120 | Application withdrawn or ip right abandoned | ||
| R016 | Response to examination communication | ||
| R016 | Response to examination communication | ||
| R120 | Application withdrawn or ip right abandoned |
Effective date: 20110822 |