KR100772730B1 - 컴플리멘터리 측면 질화물 트랜지스터 - Google Patents

컴플리멘터리 측면 질화물 트랜지스터 Download PDF

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KR100772730B1
KR100772730B1 KR1020067015753A KR20067015753A KR100772730B1 KR 100772730 B1 KR100772730 B1 KR 100772730B1 KR 1020067015753 A KR1020067015753 A KR 1020067015753A KR 20067015753 A KR20067015753 A KR 20067015753A KR 100772730 B1 KR100772730 B1 KR 100772730B1
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semiconductor
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Korean (ko)
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KR20060115763A (ko
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로버트 비치
파울 브리드거
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인터내쇼널 렉티파이어 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices

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  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020067015753A 2004-02-12 2005-02-14 컴플리멘터리 측면 질화물 트랜지스터 Expired - Lifetime KR100772730B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US54491004P 2004-02-12 2004-02-12
US60/544,910 2004-02-12
US11/056,833 US7205657B2 (en) 2004-02-12 2005-02-11 Complimentary lateral nitride transistors
US11/056,833 2005-02-11

Publications (2)

Publication Number Publication Date
KR20060115763A KR20060115763A (ko) 2006-11-09
KR100772730B1 true KR100772730B1 (ko) 2007-11-02

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KR1020067015753A Expired - Lifetime KR100772730B1 (ko) 2004-02-12 2005-02-14 컴플리멘터리 측면 질화물 트랜지스터

Country Status (5)

Country Link
US (2) US7205657B2 (enExample)
JP (1) JP2007527115A (enExample)
KR (1) KR100772730B1 (enExample)
DE (1) DE112005000353T5 (enExample)
WO (1) WO2005079365A2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5008317B2 (ja) * 2006-02-27 2012-08-22 株式会社豊田中央研究所 ユニポーラダイオード

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010072075A (ko) * 1999-05-27 2001-07-31 구사마 사부로 모놀리식 반도체 디바이스 및 그 제조 방법
KR20020067421A (ko) * 2001-02-16 2002-08-22 인터내셔널 비지네스 머신즈 코포레이션 전기 구조체를 매몰 산화층 아래에 위치한 반도체 소자에전도성 결합시키는 방법 및 그 구조체
KR20030025889A (ko) * 2001-09-21 2003-03-29 에이저 시스템즈 가디언 코포레이션 다중 작동 전압 수직 대체-게이트 트랜지스터
US6800904B2 (en) * 2002-10-17 2004-10-05 Fuji Electric Co., Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US20050062111A1 (en) * 2002-07-31 2005-03-24 Infineon Technologies Ag Maskless middle-of-line liner deposition

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2654828B2 (ja) * 1989-05-22 1997-09-17 日本電信電話株式会社 量子細線を有する半導体装置及びその製造方法
FR2689680B1 (fr) * 1992-04-02 2001-08-10 Thomson Csf Procédé de réalisation de couches minces hétéroépitaxiales et de dispositifs électroniques.
JPH07183541A (ja) * 1993-12-22 1995-07-21 Oki Electric Ind Co Ltd 半導体微細構造の形成方法
US6617226B1 (en) * 1999-06-30 2003-09-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP3430206B2 (ja) * 2000-06-16 2003-07-28 学校法人 名城大学 半導体素子の製造方法及び半導体素子
WO2002067333A1 (fr) * 2001-02-21 2002-08-29 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur et procede de fabrication correspondant
WO2002080242A1 (fr) * 2001-03-29 2002-10-10 Toyoda Gosei Co., Ltd. Procede de fabrication d'un semi-conducteur a base d'un compose nitrure du groupe iii et dispositif semi-conducteur a base d'un compose nitrure du groupe iii
JP4388720B2 (ja) * 2001-10-12 2009-12-24 住友電気工業株式会社 半導体発光素子の製造方法
JP2003152177A (ja) * 2001-11-19 2003-05-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6743291B2 (en) * 2002-07-09 2004-06-01 Chartered Semiconductor Manufacturing Ltd. Method of fabricating a CMOS device with integrated super-steep retrograde twin wells using double selective epitaxial growth
KR100632036B1 (ko) * 2002-12-30 2006-10-04 동부일렉트로닉스 주식회사 반도체 메모리 소자의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010072075A (ko) * 1999-05-27 2001-07-31 구사마 사부로 모놀리식 반도체 디바이스 및 그 제조 방법
KR20020067421A (ko) * 2001-02-16 2002-08-22 인터내셔널 비지네스 머신즈 코포레이션 전기 구조체를 매몰 산화층 아래에 위치한 반도체 소자에전도성 결합시키는 방법 및 그 구조체
KR20030025889A (ko) * 2001-09-21 2003-03-29 에이저 시스템즈 가디언 코포레이션 다중 작동 전압 수직 대체-게이트 트랜지스터
US20050062111A1 (en) * 2002-07-31 2005-03-24 Infineon Technologies Ag Maskless middle-of-line liner deposition
US6800904B2 (en) * 2002-10-17 2004-10-05 Fuji Electric Co., Ltd. Semiconductor integrated circuit device and method of manufacturing the same

Also Published As

Publication number Publication date
US20070077689A1 (en) 2007-04-05
WO2005079365A2 (en) 2005-09-01
US7205657B2 (en) 2007-04-17
US20050180231A1 (en) 2005-08-18
US7510957B2 (en) 2009-03-31
WO2005079365A3 (en) 2007-04-12
JP2007527115A (ja) 2007-09-20
DE112005000353T5 (de) 2007-02-01
KR20060115763A (ko) 2006-11-09

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