JP2007527115A5 - - Google Patents
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- Publication number
- JP2007527115A5 JP2007527115A5 JP2006553314A JP2006553314A JP2007527115A5 JP 2007527115 A5 JP2007527115 A5 JP 2007527115A5 JP 2006553314 A JP2006553314 A JP 2006553314A JP 2006553314 A JP2006553314 A JP 2006553314A JP 2007527115 A5 JP2007527115 A5 JP 2007527115A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- pillar
- semiconductor pillar
- semiconductor device
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 239
- 239000000758 substrate Substances 0.000 claims description 20
- 229910002704 AlGaN Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 230000009036 growth inhibition Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54491004P | 2004-02-12 | 2004-02-12 | |
| US11/056,833 US7205657B2 (en) | 2004-02-12 | 2005-02-11 | Complimentary lateral nitride transistors |
| PCT/US2005/004609 WO2005079365A2 (en) | 2004-02-12 | 2005-02-14 | Complimentary lateral nitride transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007527115A JP2007527115A (ja) | 2007-09-20 |
| JP2007527115A5 true JP2007527115A5 (enExample) | 2011-05-26 |
Family
ID=34840655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006553314A Pending JP2007527115A (ja) | 2004-02-12 | 2005-02-14 | コンプリメンタリ横型窒化物トランジスタ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7205657B2 (enExample) |
| JP (1) | JP2007527115A (enExample) |
| KR (1) | KR100772730B1 (enExample) |
| DE (1) | DE112005000353T5 (enExample) |
| WO (1) | WO2005079365A2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5008317B2 (ja) * | 2006-02-27 | 2012-08-22 | 株式会社豊田中央研究所 | ユニポーラダイオード |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2654828B2 (ja) * | 1989-05-22 | 1997-09-17 | 日本電信電話株式会社 | 量子細線を有する半導体装置及びその製造方法 |
| FR2689680B1 (fr) * | 1992-04-02 | 2001-08-10 | Thomson Csf | Procédé de réalisation de couches minces hétéroépitaxiales et de dispositifs électroniques. |
| JPH07183541A (ja) * | 1993-12-22 | 1995-07-21 | Oki Electric Ind Co Ltd | 半導体微細構造の形成方法 |
| GB2350926A (en) * | 1999-05-27 | 2000-12-13 | Seiko Epson Corp | Monolithic,semiconductor light emitting and receiving device |
| US6617226B1 (en) * | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| JP3430206B2 (ja) * | 2000-06-16 | 2003-07-28 | 学校法人 名城大学 | 半導体素子の製造方法及び半導体素子 |
| US6498372B2 (en) * | 2001-02-16 | 2002-12-24 | International Business Machines Corporation | Conductive coupling of electrical structures to a semiconductor device located under a buried oxide layer |
| WO2002067333A1 (fr) * | 2001-02-21 | 2002-08-29 | Mitsubishi Denki Kabushiki Kaisha | Dispositif semi-conducteur et procede de fabrication correspondant |
| WO2002080242A1 (fr) * | 2001-03-29 | 2002-10-10 | Toyoda Gosei Co., Ltd. | Procede de fabrication d'un semi-conducteur a base d'un compose nitrure du groupe iii et dispositif semi-conducteur a base d'un compose nitrure du groupe iii |
| US6686604B2 (en) * | 2001-09-21 | 2004-02-03 | Agere Systems Inc. | Multiple operating voltage vertical replacement-gate (VRG) transistor |
| JP4388720B2 (ja) * | 2001-10-12 | 2009-12-24 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
| JP2003152177A (ja) * | 2001-11-19 | 2003-05-23 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6743291B2 (en) * | 2002-07-09 | 2004-06-01 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating a CMOS device with integrated super-steep retrograde twin wells using double selective epitaxial growth |
| US6822301B2 (en) * | 2002-07-31 | 2004-11-23 | Infineon Technologies Ag | Maskless middle-of-line liner deposition |
| US6800904B2 (en) * | 2002-10-17 | 2004-10-05 | Fuji Electric Co., Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
| KR100632036B1 (ko) * | 2002-12-30 | 2006-10-04 | 동부일렉트로닉스 주식회사 | 반도체 메모리 소자의 제조 방법 |
-
2005
- 2005-02-11 US US11/056,833 patent/US7205657B2/en not_active Expired - Lifetime
- 2005-02-14 JP JP2006553314A patent/JP2007527115A/ja active Pending
- 2005-02-14 WO PCT/US2005/004609 patent/WO2005079365A2/en not_active Ceased
- 2005-02-14 KR KR1020067015753A patent/KR100772730B1/ko not_active Expired - Lifetime
- 2005-02-14 DE DE112005000353T patent/DE112005000353T5/de not_active Withdrawn
-
2006
- 2006-12-04 US US11/633,304 patent/US7510957B2/en not_active Expired - Lifetime
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