DE10224003B4 - Halbleitervorrichtung und Verfahren für ihre Herstellung - Google Patents

Halbleitervorrichtung und Verfahren für ihre Herstellung Download PDF

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Publication number
DE10224003B4
DE10224003B4 DE10224003A DE10224003A DE10224003B4 DE 10224003 B4 DE10224003 B4 DE 10224003B4 DE 10224003 A DE10224003 A DE 10224003A DE 10224003 A DE10224003 A DE 10224003A DE 10224003 B4 DE10224003 B4 DE 10224003B4
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DE
Germany
Prior art keywords
semiconductor substrate
trench
conductive film
main surface
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE10224003A
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German (de)
English (en)
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DE10224003A1 (de
Inventor
Hideki Takahashi
Shinji Aono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10224003A1 publication Critical patent/DE10224003A1/de
Application granted granted Critical
Publication of DE10224003B4 publication Critical patent/DE10224003B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/051—Manufacture or treatment of isolation region based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/50—Isolation regions based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

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  • Electrodes Of Semiconductors (AREA)
DE10224003A 2001-10-30 2002-05-29 Halbleitervorrichtung und Verfahren für ihre Herstellung Expired - Lifetime DE10224003B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-332172 2001-10-30
JP2001332172A JP3701227B2 (ja) 2001-10-30 2001-10-30 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE10224003A1 DE10224003A1 (de) 2003-05-15
DE10224003B4 true DE10224003B4 (de) 2011-06-16

Family

ID=19147629

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10224003A Expired - Lifetime DE10224003B4 (de) 2001-10-30 2002-05-29 Halbleitervorrichtung und Verfahren für ihre Herstellung

Country Status (4)

Country Link
US (3) US6909142B2 (https=)
JP (1) JP3701227B2 (https=)
KR (1) KR100500096B1 (https=)
DE (1) DE10224003B4 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
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US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2005101334A (ja) * 2003-09-25 2005-04-14 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP5135663B2 (ja) * 2004-10-21 2013-02-06 富士電機株式会社 半導体装置およびその製造方法
JP4825424B2 (ja) * 2005-01-18 2011-11-30 株式会社東芝 電力用半導体装置
KR101296984B1 (ko) 2005-06-10 2013-08-14 페어차일드 세미컨덕터 코포레이션 전하 균형 전계 효과 트랜지스터
US7560787B2 (en) * 2005-12-22 2009-07-14 Fairchild Semiconductor Corporation Trench field plate termination for power devices
EP2357670B1 (en) 2008-12-10 2015-04-01 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP5601863B2 (ja) * 2010-03-29 2014-10-08 三菱電機株式会社 電力半導体装置
US8264047B2 (en) * 2010-05-10 2012-09-11 Infineon Technologies Austria Ag Semiconductor component with a trench edge termination
JP2013055347A (ja) * 2012-11-08 2013-03-21 Sanken Electric Co Ltd 半導体装置
KR20150078449A (ko) 2013-12-30 2015-07-08 현대자동차주식회사 반도체 소자 및 그 제조 방법
CN108133966B (zh) * 2018-01-22 2024-07-05 芯合半导体(合肥)有限公司 一种集成了周边RC snubber结构的碳化硅SBD器件元胞结构
JP7337619B2 (ja) 2019-09-17 2023-09-04 株式会社東芝 半導体装置
JP7280213B2 (ja) 2020-03-04 2023-05-23 株式会社東芝 半導体装置
JP7334678B2 (ja) * 2020-06-04 2023-08-29 三菱電機株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614751A (en) * 1995-01-10 1997-03-25 Siliconix Incorporated Edge termination structure for power MOSFET
US5877528A (en) * 1997-03-03 1999-03-02 Megamos Corporation Structure to provide effective channel-stop in termination areas for trenched power transistors
WO2000042665A1 (de) * 1999-01-11 2000-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mos-leistungsbauelement und verfahren zum herstellen desselben
US6100572A (en) * 1997-03-20 2000-08-08 International Rectifier Corp. Amorphous silicon combined with resurf region for termination for MOSgated device

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US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
JPH04328860A (ja) * 1991-04-30 1992-11-17 Hitachi Ltd 半導体集積回路装置及びその製造方法
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5316959A (en) * 1992-08-12 1994-05-31 Siliconix, Incorporated Trenched DMOS transistor fabrication using six masks
JP3275536B2 (ja) * 1994-05-31 2002-04-15 三菱電機株式会社 半導体装置及びその製造方法
JP3111827B2 (ja) * 1994-09-20 2000-11-27 株式会社日立製作所 半導体装置及びそれを使った電力変換装置
JP3424635B2 (ja) 1994-09-20 2003-07-07 株式会社日立製作所 半導体装置及びそれを使った電力変換装置
JPH09283754A (ja) 1996-04-16 1997-10-31 Toshiba Corp 高耐圧半導体装置
US5907776A (en) * 1997-07-11 1999-05-25 Magepower Semiconductor Corp. Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance
US6031265A (en) * 1997-10-16 2000-02-29 Magepower Semiconductor Corp. Enhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination area
JP2000012350A (ja) * 1998-06-22 2000-01-14 Koito Mfg Co Ltd 変圧器
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
EP1078402B1 (de) * 1999-01-07 2006-08-30 Infineon Technologies AG Halbleiteranordnung mit gräben zur trennung von dotierten gebieten
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6593619B1 (en) * 1999-06-03 2003-07-15 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
JP2001102572A (ja) 1999-09-29 2001-04-13 Toyota Autom Loom Works Ltd トレンチゲートを有するパワーｍｏｓトランジスタ
KR100343151B1 (ko) * 1999-10-28 2002-07-05 김덕중 Ｓｉｐｏｓ를 이용한 고전압 반도체소자 및 그 제조방법
US6580123B2 (en) * 2000-04-04 2003-06-17 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
US6555895B1 (en) * 2000-07-17 2003-04-29 General Semiconductor, Inc. Devices and methods for addressing optical edge effects in connection with etched trenches
JP2002270844A (ja) * 2001-03-07 2002-09-20 Toshiba Corp 半導体装置及びその製造方法
US6683363B2 (en) * 2001-07-03 2004-01-27 Fairchild Semiconductor Corporation Trench structure for semiconductor devices
JP3906052B2 (ja) * 2001-10-15 2007-04-18 株式会社東芝 絶縁ゲート型半導体装置
JP3825688B2 (ja) * 2001-12-25 2006-09-27 株式会社東芝 半導体装置の製造方法
US6849529B2 (en) * 2002-10-25 2005-02-01 Promos Technologies Inc. Deep-trench capacitor with hemispherical grain silicon surface and method for making the same
US6908833B1 (en) * 2003-02-14 2005-06-21 National Semiconductor Corporation Shallow self isolated doped implanted silicon process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614751A (en) * 1995-01-10 1997-03-25 Siliconix Incorporated Edge termination structure for power MOSFET
US5877528A (en) * 1997-03-03 1999-03-02 Megamos Corporation Structure to provide effective channel-stop in termination areas for trenched power transistors
US6100572A (en) * 1997-03-20 2000-08-08 International Rectifier Corp. Amorphous silicon combined with resurf region for termination for MOSgated device
WO2000042665A1 (de) * 1999-01-11 2000-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mos-leistungsbauelement und verfahren zum herstellen desselben

Also Published As

Publication number Publication date
KR100500096B1 (ko) 2005-07-11
JP3701227B2 (ja) 2005-09-28
US6909142B2 (en) 2005-06-21
US20050233542A1 (en) 2005-10-20
DE10224003A1 (de) 2003-05-15
US7189620B2 (en) 2007-03-13
US20050208723A1 (en) 2005-09-22
JP2003133555A (ja) 2003-05-09
KR20030035800A (ko) 2003-05-09
US20030080375A1 (en) 2003-05-01

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R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20110917

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