DE102014201554B4 - Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren - Google Patents

Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren

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Publication number
DE102014201554B4
DE102014201554B4 DE102014201554.5A DE102014201554A DE102014201554B4 DE 102014201554 B4 DE102014201554 B4 DE 102014201554B4 DE 102014201554 A DE102014201554 A DE 102014201554A DE 102014201554 B4 DE102014201554 B4 DE 102014201554B4
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DE
Germany
Prior art keywords
gas flow
flow passages
gas
lateral
longitudinal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102014201554.5A
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German (de)
English (en)
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DE102014201554A1 (de
Inventor
Takumi Yamada
Yuusuke Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
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Nuflare Technology Inc
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Publication of DE102014201554A1 publication Critical patent/DE102014201554A1/de
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Publication of DE102014201554B4 publication Critical patent/DE102014201554B4/de
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE102014201554.5A 2013-01-30 2014-01-29 Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren Active DE102014201554B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013016015A JP6134522B2 (ja) 2013-01-30 2013-01-30 気相成長装置および気相成長方法
JP2013-016015 2013-01-30

Publications (2)

Publication Number Publication Date
DE102014201554A1 DE102014201554A1 (de) 2014-07-31
DE102014201554B4 true DE102014201554B4 (de) 2026-08-06

Family

ID=51163737

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014201554.5A Active DE102014201554B4 (de) 2013-01-30 2014-01-29 Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren

Country Status (6)

Country Link
US (1) US9624603B2 (enExample)
JP (1) JP6134522B2 (enExample)
KR (1) KR101610638B1 (enExample)
CN (1) CN103966574B (enExample)
DE (1) DE102014201554B4 (enExample)
TW (1) TWI494469B (enExample)

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JP6199619B2 (ja) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
JP6153401B2 (ja) * 2013-07-02 2017-06-28 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6495025B2 (ja) 2014-01-31 2019-04-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 真空統合ハードマスク処理および装置
KR102215965B1 (ko) * 2014-04-11 2021-02-18 주성엔지니어링(주) 가스 분사 장치 및 이를 포함하는 기판 처리 장치
CN104120408B (zh) * 2014-08-06 2016-09-07 上海世山科技有限公司 一种改进衬底气流方向的hvpe反应器
KR102267923B1 (ko) * 2014-08-26 2021-06-22 에이에스엠 아이피 홀딩 비.브이. 증착 장치
JP6386901B2 (ja) * 2014-12-17 2018-09-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
JP6193284B2 (ja) * 2015-03-18 2017-09-06 株式会社東芝 流路構造、吸排気部材、及び処理装置
JP6054470B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
JP5990626B1 (ja) * 2015-05-26 2016-09-14 株式会社日本製鋼所 原子層成長装置
JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
WO2018106627A1 (en) * 2016-12-08 2018-06-14 Applied Materials, Inc. Temporal atomic layer deposition processing chamber
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JP7012613B2 (ja) * 2018-07-13 2022-01-28 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7365761B2 (ja) * 2018-08-24 2023-10-20 株式会社ニューフレアテクノロジー 気相成長装置
KR102955829B1 (ko) 2018-11-14 2026-04-23 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
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CN110158055B (zh) * 2019-05-15 2022-01-14 拓荆科技股份有限公司 多段喷淋组件
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
JP2022539721A (ja) * 2019-06-27 2022-09-13 ラム リサーチ コーポレーション フォトレジスト乾式蒸着のための装置
US12601974B2 (en) 2019-06-28 2026-04-14 Lam Research Corporation Bake strategies to enhance lithographic performance of metal-containing resist
KR20250160237A (ko) 2019-06-28 2025-11-11 램 리써치 코포레이션 복수의 패터닝 복사-흡수 엘리먼트들 및/또는 수직 조성 경사를 갖는 포토레지스트
TWI849159B (zh) 2019-06-28 2024-07-21 美商蘭姆研究公司 光阻膜的乾式腔室清潔
WO2021102726A1 (zh) * 2019-11-27 2021-06-03 东莞市中镓半导体科技有限公司 一种用于GaN材料生长的线性喷头
CN111020693B (zh) * 2019-12-27 2021-01-29 季华实验室 一种碳化硅外延生长设备的进气装置
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
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CN111321463B (zh) 2020-03-06 2021-10-15 北京北方华创微电子装备有限公司 反应腔室
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KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
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TW201430166A (zh) 2014-08-01
JP2014146767A (ja) 2014-08-14
KR20140098000A (ko) 2014-08-07
KR101610638B1 (ko) 2016-04-08
CN103966574B (zh) 2017-04-12
CN103966574A (zh) 2014-08-06
JP6134522B2 (ja) 2017-05-24
TWI494469B (zh) 2015-08-01
DE102014201554A1 (de) 2014-07-31
US20140209015A1 (en) 2014-07-31
US9624603B2 (en) 2017-04-18

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