CN114107953A - 原子层沉积装置及其喷淋板 - Google Patents
原子层沉积装置及其喷淋板 Download PDFInfo
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- CN114107953A CN114107953A CN202111097628.4A CN202111097628A CN114107953A CN 114107953 A CN114107953 A CN 114107953A CN 202111097628 A CN202111097628 A CN 202111097628A CN 114107953 A CN114107953 A CN 114107953A
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- 239000007921 spray Substances 0.000 title claims abstract description 55
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 48
- 238000006243 chemical reaction Methods 0.000 claims abstract description 81
- 238000005507 spraying Methods 0.000 claims abstract description 49
- 239000007789 gas Substances 0.000 claims description 66
- 239000011248 coating agent Substances 0.000 abstract description 20
- 238000000576 coating method Methods 0.000 abstract description 20
- 239000000047 product Substances 0.000 description 37
- 238000009826 distribution Methods 0.000 description 24
- 230000007246 mechanism Effects 0.000 description 17
- 239000010408 film Substances 0.000 description 11
- 238000011144 upstream manufacturing Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000005086 pumping Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111097628.4A CN114107953A (zh) | 2021-09-18 | 2021-09-18 | 原子层沉积装置及其喷淋板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111097628.4A CN114107953A (zh) | 2021-09-18 | 2021-09-18 | 原子层沉积装置及其喷淋板 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114107953A true CN114107953A (zh) | 2022-03-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111097628.4A Pending CN114107953A (zh) | 2021-09-18 | 2021-09-18 | 原子层沉积装置及其喷淋板 |
Country Status (1)
Country | Link |
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CN (1) | CN114107953A (zh) |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09129563A (ja) * | 1995-11-02 | 1997-05-16 | Ulvac Japan Ltd | シャワープレート |
US20040216668A1 (en) * | 2003-04-29 | 2004-11-04 | Sven Lindfors | Showerhead assembly and ALD methods |
CN1715442A (zh) * | 2004-04-12 | 2006-01-04 | 应用材料股份有限公司 | 用于大区域等离子体加强化学气相沉积的气体扩散喷头 |
US20070095284A1 (en) * | 2004-06-04 | 2007-05-03 | Iizuka Hachishiro | Gas treating device and film forming device |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
CN102001744A (zh) * | 2010-12-31 | 2011-04-06 | 重庆市渝西水务有限公司 | 一体化奥贝尔氧化沟组合式曝气系统 |
CN103422071A (zh) * | 2012-05-18 | 2013-12-04 | 中国地质大学(北京) | 一种可快速更换匀气方式的真空腔室 |
CN103436860A (zh) * | 2013-08-16 | 2013-12-11 | 光垒光电科技(上海)有限公司 | 气体通道及进气装置 |
US20140209015A1 (en) * | 2013-01-30 | 2014-07-31 | Nuflare Technology, Inc. | Vapor phase growth apparatus and vapor phase growth method |
CN105274498A (zh) * | 2012-05-11 | 2016-01-27 | 中微半导体设备(上海)有限公司 | 气体喷淋头、其制造方法及薄膜生长反应器 |
CN105839079A (zh) * | 2016-06-07 | 2016-08-10 | 江苏微导纳米装备科技有限公司 | 真空镀膜装置 |
CN109518166A (zh) * | 2019-01-28 | 2019-03-26 | 南京爱通智能科技有限公司 | 一种适用于超大规模原子层沉积的气体匀流系统 |
CN112309895A (zh) * | 2019-07-31 | 2021-02-02 | 台湾积体电路制造股份有限公司 | 沉积设备和使用其形成金属氧化物层的方法 |
-
2021
- 2021-09-18 CN CN202111097628.4A patent/CN114107953A/zh active Pending
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09129563A (ja) * | 1995-11-02 | 1997-05-16 | Ulvac Japan Ltd | シャワープレート |
US20040216668A1 (en) * | 2003-04-29 | 2004-11-04 | Sven Lindfors | Showerhead assembly and ALD methods |
CN1715442A (zh) * | 2004-04-12 | 2006-01-04 | 应用材料股份有限公司 | 用于大区域等离子体加强化学气相沉积的气体扩散喷头 |
US20070095284A1 (en) * | 2004-06-04 | 2007-05-03 | Iizuka Hachishiro | Gas treating device and film forming device |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
CN102001744A (zh) * | 2010-12-31 | 2011-04-06 | 重庆市渝西水务有限公司 | 一体化奥贝尔氧化沟组合式曝气系统 |
CN105274498A (zh) * | 2012-05-11 | 2016-01-27 | 中微半导体设备(上海)有限公司 | 气体喷淋头、其制造方法及薄膜生长反应器 |
CN103422071A (zh) * | 2012-05-18 | 2013-12-04 | 中国地质大学(北京) | 一种可快速更换匀气方式的真空腔室 |
US20140209015A1 (en) * | 2013-01-30 | 2014-07-31 | Nuflare Technology, Inc. | Vapor phase growth apparatus and vapor phase growth method |
CN103436860A (zh) * | 2013-08-16 | 2013-12-11 | 光垒光电科技(上海)有限公司 | 气体通道及进气装置 |
CN105839079A (zh) * | 2016-06-07 | 2016-08-10 | 江苏微导纳米装备科技有限公司 | 真空镀膜装置 |
CN109518166A (zh) * | 2019-01-28 | 2019-03-26 | 南京爱通智能科技有限公司 | 一种适用于超大规模原子层沉积的气体匀流系统 |
CN112309895A (zh) * | 2019-07-31 | 2021-02-02 | 台湾积体电路制造股份有限公司 | 沉积设备和使用其形成金属氧化物层的方法 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Li Xiang Inventor after: Yuan Hongxia Inventor after: Han Ping Inventor after: Zou Jiachen Inventor after: Zuo Min Inventor after: Hu Lei Inventor after: Li Weiming Inventor after: Zhou Yunfu Inventor before: Li Xiang Inventor before: Yuan Hongxia Inventor before: Han Ping Inventor before: Zou Jiachen Inventor before: Zuo Min Inventor before: Hu Lei Inventor before: Li Weiming |
|
CB03 | Change of inventor or designer information | ||
CB02 | Change of applicant information |
Address after: No. 27 Changjiang South Road, Xinwu District, Wuxi City, Jiangsu Province, China Applicant after: Jiangsu micro nano technology Co.,Ltd. Address before: 214000 No. 11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Applicant before: Jiangsu micro nano technology Co.,Ltd. |
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CB02 | Change of applicant information |