CN109518166A - 一种适用于超大规模原子层沉积的气体匀流系统 - Google Patents

一种适用于超大规模原子层沉积的气体匀流系统 Download PDF

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CN109518166A
CN109518166A CN201910080545.0A CN201910080545A CN109518166A CN 109518166 A CN109518166 A CN 109518166A CN 201910080545 A CN201910080545 A CN 201910080545A CN 109518166 A CN109518166 A CN 109518166A
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CN109518166B (zh
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余伟
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Nanjing Aitong Intelligent Technology Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502Flow conditions in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明公开一种适用于超大规模原子层沉积的气体匀流系统,包括通入前驱体气体的流通管道,该流通管道的进气端端面上开设有若干进气孔,出气端端面分隔为数量与进气孔数量相匹配的出气孔,流通管道的内腔分隔为数量与出气孔数量一致的独立流道;每个出气孔与相对应的一个或多个进气孔通过位于流通管道内的对应独立流道相连通,各独立流道呈“喇叭状”,由进气孔侧向出气孔侧,内径逐渐增大。本发明中在流通管道内设置多个独立流道,出气孔与相对应的出气孔通过位于流通管道内的对应独立流道相连通,每种前驱体气体从进气孔进入独立流道,经过各独立流道到达出气孔,前驱气体流出装置时已布满整个平面,匀流效果更好。

Description

一种适用于超大规模原子层沉积的气体匀流系统
技术领域
本发明属于半导体制造领域,具体涉及光伏电池制造领域,将原子层沉积(ALD)技术应用到光伏领域,生产超大规模产品的设备。
背景技术
原子层沉积技术通常需要将产品交替暴露在两种或两种以上前驱体气体中,而这一特性使这些化学品交替接触过的设备部件表面产生镀膜或粉尘等不良效果。为了避免上诉效应产生有些设备已经采用了每种前驱体采用一根专用管路供气的设计。
对于大规模原子层沉积设备产品室很大,而原子层沉积技术希望一种前驱体同时均匀的到达产品表面。用一个管路供气显然无法实现这一要求,目前已有原子层沉积设备采用钢板打孔的装置对前驱体进行匀流,部分达到这一效果。
专利201610395128 .1公开了一种喷淋装置结合上述两个技术方案。但其装置在实际应用中存在喷淋板产生镀膜或粉尘的情况,这个问题的本质原因依然是设备部件暴露在多种前驱体气体中。
发明内容
发明目的:本发明目的在于针对现有技术的不足,提供一种适用于超大规模原子层沉积的气体匀流系统,从原理角度避免了设备部件表面镀膜或产生粉尘的不良效果,同时考虑了空间匀流功能,有利于提高镀膜均匀性。
技术方案:本发明所述适用于超大规模原子层沉积的气体匀流系统,包括通入前驱体气体的流通管道,该流通管道的进气端端面上开设有若干进气孔,出气端端面分隔为数量与进气孔数量相匹配的出气孔,流通管道的内腔分隔为数量与出气孔数量一致的独立流道;每个出气孔与相对应的一个或多个进气孔通过位于流通管道内的对应独立流道相连通,各独立流道呈“喇叭状”,由进气孔侧向出气孔侧,内径逐渐增大。
本发明进一步优选地技术方案为,所述出气孔为矩形,独立流道的出气孔侧的端部为长宽与出气孔长宽一致的矩形,相邻两出气孔之间通过倒角连接。
优选地,独立流道的进气孔侧与两个以上进气孔连通,与同一独立流道连通的各进气孔位于同一行或同一列。
优选地,所述出气孔为圆形,独立流道的出气孔侧的端部为直径与出气孔直径一致的圆形,各出气孔相交或相切。
优选地,独立流道的进气孔侧与两个以上进气孔连通,与同一独立流道连通的各进气孔位于同一行或同一列。
有益效果:本发明中在流通管道内设置多个独立流道,出气孔与相对应的出气孔通过位于流通管道内的对应独立流道相连通,每种前驱体气体从进气孔进入独立流道,经过各独立流道到达出气孔,前驱气体流出装置时已布满整个平面,匀流效果更好,并且由于出气孔已全部包含在流通管道中,整个部件没有任何区域暴露在两种前驱体中,进而避免了设备部件镀膜或产生粉尘的不良效果。
附图说明
图1为本发明实施例1的结构示意图;
图2为本发明实施例2的结构示意图;
图3为本发明实施例3的结构示意图;
图中,1-流通管道、2-进气孔、3-出气孔、4-独立流道。
具体实施方式
下面通过附图对本发明技术方案进行详细说明,但是本发明的保护范围不局限于所述实施例。
实施例1:一种适用于超大规模原子层沉积的气体匀流系统,包括通入前驱体气体的流通管道1,该流通管道1为方形筒状结构,流通管道1的进气端端面上开设有9个进气孔2,出气端端面分隔为9个矩形的出气孔3,流通管道1的内腔分隔有9个独立流道4,每个出气孔3与相对应的进气孔2通过位于流通管道1内的对应独立流道4相连通,各独立流道4呈“喇叭状”,由进气孔侧向出气孔侧,内径逐渐增大。每种前驱体气体从其中一个进气孔2进入,经过各自独立流道到达出气孔3。
本实施例中进气孔2和出气孔3的数量可以根据实际情况调整,独立流道的数量也相应调整。
实施例2:本实施例中,出气孔3为相交的圆形。其余部分与实施例1完全一致。
实施例3:本实施例与实施例1不同之处在于,出气孔3的矩形长宽比较大时,同一出气孔3与三个进气孔2相连通,但与同一独立流道连通的多个进气孔2通入同一种前驱体。本实施例中可以根据出气孔3的大小增减连通的进气孔2的数量。
如上所述,尽管参照特定的优选实施例已经表示和表述了本发明,但其不得解释为对本发明自身的限制。在不脱离所附权利要求定义的本发明的精神和范围前提下,可对其在形式上和细节上作出各种变化。

Claims (5)

1.一种适用于超大规模原子层沉积的气体匀流系统,包括通入前驱体气体的流通管道,其特征在于,该流通管道的进气端端面上开设有若干进气孔,出气端端面分隔为数量与进气孔数量相匹配的出气孔,流通管道的内腔分隔为数量与出气孔数量一致的独立流道;每个出气孔与相对应的一个或多个进气孔通过位于流通管道内的对应独立流道相连通,各独立流道呈“喇叭状”,由进气孔侧向出气孔侧,内径逐渐增大。
2.根据权利要求1所述的适用于超大规模原子层沉积的气体匀流系统,其特征在于,所述出气孔为矩形,独立流道的出气孔侧的端部为长宽与出气孔长宽一致的矩形,相邻两出气孔之间通过倒角连接。
3.根据权利要求2所述的适用于超大规模原子层沉积的气体匀流系统,其特征在于,独立流道的进气孔侧与两个以上进气孔连通,与同一独立流道连通的各进气孔位于同一行或同一列。
4.根据权利要求1所述的适用于超大规模原子层沉积的气体匀流系统,其特征在于,所述出气孔为圆形,独立流道的出气孔侧的端部为直径与出气孔直径一致的圆形,各出气孔相交或相切。
5.根据权利要求4所述的适用于超大规模原子层沉积的气体匀流系统,其特征在于,独立流道的进气孔侧与两个以上进气孔连通,与同一独立流道连通的各进气孔位于同一行或同一列。
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN113373430A (zh) * 2021-05-21 2021-09-10 江苏鹏举半导体设备技术有限公司 原子层沉积装置
CN114107953A (zh) * 2021-09-18 2022-03-01 江苏微导纳米科技股份有限公司 原子层沉积装置及其喷淋板

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CN113373430A (zh) * 2021-05-21 2021-09-10 江苏鹏举半导体设备技术有限公司 原子层沉积装置
CN114107953A (zh) * 2021-09-18 2022-03-01 江苏微导纳米科技股份有限公司 原子层沉积装置及其喷淋板

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